A 3 Gb/s optical detector in standard CMOS for 850 nm optical communication

This paper presents a monolithic optical detector, consisting of an integrated photodiode and a preamplifier in a standard 0.18-/spl mu/m CMOS technology. A data rate of 3 Gb/s at BER <10/sup -11/ was achieved for /spl lambda/=850 nm with 25-/spl mu/W peak-peak optical power. This data rate is more than four times than that of current state-of-the-art optical detectors in standard CMOS reported so far. High-speed operation is achieved without reducing circuit responsivity by using an inherently robust analog equalizer that compensates (in gain and phase) for the photodiode roll-off over more than three decades. The presented solution is applicable to various photodiode structures, wavelengths, and CMOS generations

Silicon photonics devices for integrated analog signal processing and sampling

Silicon photonics offers the possibility of a reduction in size weight and power for many optical systems, and could open up the ability to build optical systems with complexities that would otherwise be impossible to achieve. Silicon photonics is an emerging technology that has already been inserted into commercial communication products. This technology has also been applied to analog signal processing applications. MIT Lincoln Laboratory in collaboration with groups at MIT has developed a toolkit of silicon photonic devices with a focus on the needs of analog systems. This toolkit includes low-loss waveguides, a high-speed modulator, ring resonator based filter bank, and all-silicon photodiodes. The components are integrated together for a hybrid photonic and electronic analog-to-digital converter. The development and performance of these devices will be discussed. Additionally, the linear performance of these devices, which is important for analog systems, is also investigated

Enhanced Sensitivity of CMOS Image Sensors by Stacked Diodes

We have investigated and compared the performance of photodiodes built with stacked p/n junctions operating in parallel versus conventional ones made with single p/n junctions. We propose a method to characterize and compare photodiodes sensitivity. For this purpose, a dedicated chip in the standard AMS 180-nm HV technology has been fabricated. Four different sensor structures were implemented and compared. Experimental results are provided. Measurements show sensitivity enhancement ranging from 55% to 70% within the 500-1100 nm spectral region. The larger increment is happening in the near infrared band (up to 62%). Such results make stacked photodiodes suitable candidates for the implementation of photosensors in vision chips designed for standard CMOS technologies.Ministerio de Economía y Competitividad TEC2012-33634, TEC2015-66878- C3-1-RJunta de Andalucía TIC 2012-2338Office of Naval Research (USA) N00014141035

High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in different applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. The maximum absorption efficiency of the devices was 2.4 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode was successfully fabricated and had a dominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25% thinner Ge absorption layer.Comment: 5pages,2figure

Characterization of Power-to-Phase Conversion in High-Speed P-I-N Photodiodes

Fluctuations of the optical power incident on a photodiode can be converted into phase fluctuations of the resulting electronic signal due to nonlinear saturation in the semiconductor. This impacts overall timing stability (phase noise) of microwave signals generated from a photodetected optical pulse train. In this paper, we describe and utilize techniques to characterize this conversion of amplitude noise to phase noise for several high-speed (>10 GHz) InGaAs P-I-N photodiodes operated at 900 nm. We focus on the impact of this effect on the photonic generation of low phase noise 10 GHz microwave signals and show that a combination of low laser amplitude noise, appropriate photodiode design, and optimum average photocurrent is required to achieve phase noise at or below -100 dBc/Hz at 1 Hz offset a 10 GHz carrier. In some photodiodes we find specific photocurrents where the power-to-phase conversion factor is observed to go to zero

Color-to-speech sensory substitution device for the visually impaired

A hardware device is presented that converts color to speech for use by the blind and visually impaired. The use of audio tones for transferring knowledge of colors identified to individuals was investigated but was discarded in favor of the use of direct speech. A unique color-clustering algorithm was implemented using a hardware description language (VHDL), which in-turn was used to program an Altera Corporation's programmable logic device (PLD). The PLD maps all possible incoming colors into one of 24 color names, and outputs an address to a speech device, which in-turn plays back one of 24 voice recorded color names. To the author's knowledge, there are only two such color to speech systems available on the market. However, both are designed to operate at a distance of less than an inch from the surface whose color is to be checked. The device presented here uses original front-end optics to increase the range of operation from less than an inch to sixteen feet and greater. Because of the increased range of operation, the device can not only be used for color identification, but also as a navigation aid

CMOS-3D smart imager architectures for feature detection

This paper reports a multi-layered smart image sensor architecture for feature extraction based on detection of interest points. The architecture is conceived for 3-D integrated circuit technologies consisting of two layers (tiers) plus memory. The top tier includes sensing and processing circuitry aimed to perform Gaussian filtering and generate Gaussian pyramids in fully concurrent way. The circuitry in this tier operates in mixed-signal domain. It embeds in-pixel correlated double sampling, a switched-capacitor network for Gaussian pyramid generation, analog memories and a comparator for in-pixel analog-to-digital conversion. This tier can be further split into two for improved resolution; one containing the sensors and another containing a capacitor per sensor plus the mixed-signal processing circuitry. Regarding the bottom tier, it embeds digital circuitry entitled for the calculation of Harris, Hessian, and difference-of-Gaussian detectors. The overall system can hence be configured by the user to detect interest points by using the algorithm out of these three better suited to practical applications. The paper describes the different kind of algorithms featured and the circuitry employed at top and bottom tiers. The Gaussian pyramid is implemented with a switched-capacitor network in less than 50 μs, outperforming more conventional solutions.Xunta de Galicia 10PXIB206037PRMinisterio de Ciencia e Innovación TEC2009-12686, IPT-2011-1625-430000Office of Naval Research N00014111031

Avalanche photodiode photon counting receivers for space-borne lidars

Avalanche photodiodes (APD) are studied for uses as photon counting detectors in spaceborne lidars. Non-breakdown APD photon counters, in which the APD's are biased below the breakdown point, are shown to outperform: (1) conventional APD photon counters biased above the breakdown point; (2) conventional APD photon counters biased above the breakdown point; and (3) APD's in analog mode when the received optical signal is extremely weak. Non-breakdown APD photon counters were shown experimentally to achieve an effective photon counting quantum efficiency of 5.0 percent at lambda = 820 nm with a dead time of 15 ns and a dark count rate of 7000/s which agreed with the theoretically predicted values. The interarrival times of the counts followed an exponential distribution and the counting statistics appeared to follow a Poisson distribution with no after pulsing. It is predicted that the effective photon counting quantum efficiency can be improved to 18.7 percent at lambda = 820 nm and 1.46 percent at lambda = 1060 nm with a dead time of a few nanoseconds by using more advanced commercially available electronic components