Guest editorial: Special issue on selected papers from IEEE BioCAS 2018

The papers in this special section were presented at the 2018 IEEE Biomedical Circuits and Systems Conference (BioCAS 2018) that was held in in Cleveland, OH, from October 17–19, 2018

Efficient DSP and Circuit Architectures for Massive MIMO: State-of-the-Art and Future Directions

Massive MIMO is a compelling wireless access concept that relies on the use of an excess number of base-station antennas, relative to the number of active terminals. This technology is a main component of 5G New Radio (NR) and addresses all important requirements of future wireless standards: a great capacity increase, the support of many simultaneous users, and improvement in energy efficiency. Massive MIMO requires the simultaneous processing of signals from many antenna chains, and computational operations on large matrices. The complexity of the digital processing has been viewed as a fundamental obstacle to the feasibility of Massive MIMO in the past. Recent advances on system-algorithm-hardware co-design have led to extremely energy-efficient implementations. These exploit opportunities in deeply-scaled silicon technologies and perform partly distributed processing to cope with the bottlenecks encountered in the interconnection of many signals. For example, prototype ASIC implementations have demonstrated zero-forcing precoding in real time at a 55 mW power consumption (20 MHz bandwidth, 128 antennas, multiplexing of 8 terminals). Coarse and even error-prone digital processing in the antenna paths permits a reduction of consumption with a factor of 2 to 5. This article summarizes the fundamental technical contributions to efficient digital signal processing for Massive MIMO. The opportunities and constraints on operating on low-complexity RF and analog hardware chains are clarified. It illustrates how terminals can benefit from improved energy efficiency. The status of technology and real-life prototypes discussed. Open challenges and directions for future research are suggested.Comment: submitted to IEEE transactions on signal processin

Always-On 674uW @ 4GOP/s Error Resilient Binary Neural Networks with Aggressive SRAM Voltage Scaling on a 22nm IoT End-Node

Binary Neural Networks (BNNs) have been shown to be robust to random bit-level noise, making aggressive voltage scaling attractive as a power-saving technique for both logic and SRAMs. In this work, we introduce the first fully programmable IoT end-node system-on-chip (SoC) capable of executing software-defined, hardware-accelerated BNNs at ultra-low voltage. Our SoC exploits a hybrid memory scheme where error-vulnerable SRAMs are complemented by reliable standard-cell memories to safely store critical data under aggressive voltage scaling. On a prototype in 22nm FDX technology, we demonstrate that both the logic and SRAM voltage can be dropped to 0.5Vwithout any accuracy penalty on a BNN trained for the CIFAR-10 dataset, improving energy efficiency by 2.2X w.r.t. nominal conditions. Furthermore, we show that the supply voltage can be dropped to 0.42V (50% of nominal) while keeping more than99% of the nominal accuracy (with a bit error rate ~1/1000). In this operating point, our prototype performs 4Gop/s (15.4Inference/s on the CIFAR-10 dataset) by computing up to 13binary ops per pJ, achieving 22.8 Inference/s/mW while keeping within a peak power envelope of 674uW - low enough to enable always-on operation in ultra-low power smart cameras, long-lifetime environmental sensors, and insect-sized pico-drones.Comment: Submitted to ISICAS2020 journal special issu

Guest Editorial Special Issue on Selected Papers From IEEE ISCAS 2020

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A pW-Power Hz-Range Oscillator Operating With a 0.3-1.8-V Unregulated Supply

In this paper, a pW-power relaxation oscillator for sensor node applications is presented. The proposed oscillator operates over a wide supply voltage range from nominal down to deep sub-threshold and requires only a sub-pF capacitor for Hz-range output frequency. A true pW-power operation is enabled thanks to the adoption of an architecture leveraging transistor operation in super-cutoff, the elimination of voltage regulation, and current reference. Indeed, the oscillator can be powered directly from highly variable voltage sources (e.g., harvesters and batteries over their whole charge/discharge cycle). This is achieved thanks to the wide supply voltage range, the low voltage sensitivity of the output frequency and the current drawn from the supply. A test chip of the proposed oscillator in 180 nm exhibits a nominal frequency of approximately 4 Hz, a supply voltage range from 1.8 V down to 0.3 V with 10%/V supply sensitivity, 8-18-pA current absorption, and 4%/°C thermal drift from -20 °C to 40 °C at an area of 1600 μm². To the best of the authors' knowledge, the proposed oscillator is the only one able to operate from sub-threshold to nominal voltage

Programmable Active Mirror: A Scalable Decentralized Router

This work proposes and demonstrates the scalable router array that eliminates the internal centralization of conventional arrays, unlocking scalability, and the potential for a system composed of spatially separated elements that do not share a common timing reference. Architectural variations are presented, and their specific tradeoffs are discussed. The general operation, steering capabilities, signal and noise considerations, and timing control advantages are evaluated through analysis, simulation, and measurements. An element-level CMOS radio frequency integrated circuit (RFIC) is developed and used to demonstrate a four-element 25 GHz prototype router. The RFIC's programmable true time delay (TTD) control is used to correct path-length-difference-induced intersymbol interference (ISI) and improve a rerouted 270-Mb/s 64-QAM constellation from a completely scrambled state to an EVM of 4% rms (-28 dB). The prototype scalable router's concurrent dual-beam capabilities are demonstrated by simultaneously steering two full power beams at 24.9 and 25 GHz in two different directions in a free-space electromagnetic setup

High-Density Solid-State Memory Devices and Technologies

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

Saw-Less radio receivers in CMOS

Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios