Multifunctional Magnetoelectric Materials for Device Applications

Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic spin, electric dipole, and ferroelastic ordering, and have drawn increasing interest due to their multi-functionality for a variety of device applications. Since single-phase materials exist rarely in nature with such cross-coupling properties, an intensive research activity is being pursued towards the discovery of new single-phase multiferroic materials and the design of new engineered materials with strong magneto-electric (ME) coupling. This review article summarizes the development of different kinds of multiferroic material: single-phase and composite ceramic, laminated composite, and nanostructured thin films. Thin-film nanostructures have higher magnitude direct ME coupling values and clear evidence of indirect ME coupling compared with bulk materials. Promising ME coupling coefficients have been reported in laminated composite materials in which signal to noise ratio is good for device fabrication. We describe the possible applications of these materials

Lead palladium titanate : a room temperature nanoscale multiferroic thin film

The authors acknowledge the financial support from the Department of Defense, USA (DoD Grant No. FA9550-16-1-0295).The discovery of single-phase multiferroic materials and the understanding of coupling mechanisms between their spin and polarization is important from the point of view of next generation logic and memory devices. Herein we report the fabrication, dielectric, ferroelectric, piezo-response force microscopy, and magnetization measurements of Pd-substituted room-temperature magnetoelectric multiferroic PbPd0.3Ti0.7O3 (PbPdT) thin films. Highly oriented PbPdT thin films were deposited on {(LaAlO3)0.3(Sr2AlTaO6)0.7} (LSAT) substrates in oxygen atmosphere using pulsed laser deposition technique. X-ray diffraction studies revealed that the films had tetragonal phase with (001) orientation. Surface morphology studies using atomic force and scanning electron microscopy suggest a smooth and homogeneous distribution of grains on the film surface with roughness ~2 nm. A large dielectric constant of ~1700 and a low-loss tangent value of ~0.3 at 10 kHz were obtained at room temperature. Temperature dependent dielectric measurements carried out on Pt/PbPdT/La0.7Sr0.3MnO3 (LSMO) metal-dielectric-metal capacitors suggest a ferroelectric to paraelectric transition above 670 K. The measured polarization hysteresis loops at room temperature were attributed to its ferroelectric behavior. From a Tauc plot of (αhν)2 versus energy, the direct band gap Eg of PbPdT thin films was calculated as 3 eV. Ferroelectric piezoelectric nature of the films was confirmed from a strong domain switching response revealed from piezo-response force microscopy. A well-saturated magnetization M-H loop with remanent magnetization of 3.5 emu/cm3 was observed at room temperature, and it retains ferromagnetic ordering in the temperature range 5–395 K. Origin of the magnetization could be traced to the mixed oxidation states of Pd2+/Pd4+ dispersed in polar PbTiO3 matrix, as revealed by our x-ray photoelectron spectroscopic results. These results suggest that PbPdT thin films are multiferroic (ferroelectric-ferromagnetic) at room temperature.Publisher PDFPeer reviewe

A ferroelectric memristor

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures

Lanthanide-assisted deposition of strongly electro-optic PZT thin films on silicon: toward integrated active nanophotonic devices

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5–15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm2, and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices

Tailoring ferroelectric properties of 0.37BiScO3-0.63PbTiO3 thin films using a multifunctional LaNiO3 interlayer

Functional oxide thin films integrated into CMOS technology often exhibit degraded properties with respect to bulk materials because of complex interfacial phenomena. In this contribution, we demonstrate that a sol-gel LaNiO3 (LNO) interlayer deposited onto the surface of a Pt/TiO2/SiO2/Si substrate prior to growth of sol-gel BiScO3-PbTiO3 (BSPT) films acts: i) to seed nucleation of perovskite structured; ii) to template growth to give controlled orientation and enhanced crystallinity and iii) as a sink for oxygen vacancies (VO). The LNO interlayer therefore not only improves the ferroelectric, piezoelectric and dielectric properties but also reduces leakage current and prevents degradation of the remanent polarization during fatigue tests. We propose that the use of a LNO interfacial layer may offer a generic solution to interfacial degradation in functional oxide films

Evidence for Room-Temperature Weak Ferromagnetic and Ferroelectric Ordering in Magnetoelectric Pb(Fe0.634W0.266Nb0.1)O3 Ceramic

We report the evidence of weak ferromagnetic and ferroelectric ordering in polycrystalline Pb(Fe0.634 W0.266Nb0.1)O3 (0.8(PbFe2/3W1/3)O3�0.2Pb(Fe1/2Nb1/2) O3) (PFWN) ceramic at room temperature. The Pb(Fe0.634 W0.266Nb0.1)O3solid solution synthesized through the columbite method. The obtained single-phase Pb(Fe0.634 W0.266Nb0.1)O3ceramic was subjected to X-ray diffraction, neutron diffraction, magnetization, Mössbauer spectroscopy, and ferroelectric measurements. The X-ray diffraction and neutron diffraction pattern confirms the formation of single phase without any traces of pyrochlore phases, having cubic structure with Pm-3m space group. The Rietveld refinements were carried out on both patterns, and ND data confirms the G-type antiferromagnetic structure with propagation vector (k = 1/2, 1/2, and 1/2). However, along with the antiferromagnetic ordering of the Fe spins, we also observed the existence of weak ferromagnetism. This result was confirmed through (i) a clear opening of hysteresis (M � H) loop, (ii) bifurcation of the field-cooled (FC) and zero-field-cooled (ZFC) susceptibilities, (iii) spin-glass behavior, and (iv) Mössbauer spectroscopy. © 2016, Springer Science+Business Media New York

Improved electrocaloric effect in (100)-oriented Pb0.97La0.02(Zr0.57Sn0.38Ti0.05)O3 antiferroelectric thick film by interface engineering

In this work, 1.5-μm Pb0.97La0.02(Zr0.57Sn0.38Ti0.05)O3 antiferroelectric thick films with and without a ZrO2 thin layer were deposited on LaNiO3(100)/Si(100) substrates. The effects of ZrO2 thin layer on the microstructure, electrical properties, and especial electrocaloric effect of the antiferroelectric films were studied in detail. Although the films both with and without ZrO2 buffer layer displayed (100)-preferred orientation, possessed dense and uniform surface microstructure, the ZrO2-buffered films have an enlarged grain size by 27%, compared with the thick films without the buffer layer. Accordingly, the dielectric constant and saturate polarization of this antiferroelectric thick films was improved by the insertion of ZrO2 thin layer, and simultaneously its leakage current was slightly reduced. As a result, a great improvement in cooling character caused by ferroelectric–antiferroelectric phase switching, was realized in the ZrO2-buffered films