Novel Materials and Devices for Terahertz Detection and Emission for Sensing, Imaging and Communication

Technical advancement is required to attain a high data transmission rate, which entails expanding beyond the currently available bandwidth and establishing a new standard for the highest data rates, which mandates a higher frequency range and larger bandwidth. The THz spectrum (0.1-10 THz) has been considered as an emerging next frontier for the future 5G and beyond technology. THz frequencies also offer unique characteristics, such as penetrating most dielectric materials like fabric, plastic, and leather, making them appealing for imaging and sensing applications. Therefore, employing a high-power room temperature, tunable THz emitters, and a high responsivity THz detector is essential. Dyakonov-theory Shur\u27s was applied in this dissertation to achieve tunable THz detection and emission by plasma waves in high carrier density channels of field-effect devices. The first major contribution of this dissertation is developing graphene-based THz plasmonics detector with high responsivity. An upside-down free-standing graphene in a field effect transistor based resonant room temperature THz detector device with significantly improved mobility and gate control has been presented. The highest achieved responsivity is ~3.1kV/W, which is more than 10 times higher than any THz detector reported till now. The active region is predominantly single-layer graphene with multi-grains, even though the fabricated graphene THz detector has the highest responsivity. The challenges encountered during the fabrication and measurement of the graphene-based detector have been described, along with a strategy to overcome them while preserving high graphene mobility. In our new design, a monolayer of hBN underneath the graphene layer has been deposited to increase the mobility and electron concentration rate further. We also investigated the diamond-based FETs for their potential characteristics as a THz emitters and detectors. Diamond\u27s wide bandgap, high breakdown field, and high thermal conductivity attributes make it a potential semiconductor material for high voltage, high power, and high-temperature operation. Diamond is a good choice for THz and sub-THz applications because of its high optical phonon scattering and high momentum relaxation time. Numerical and analytical studies of diamond materials, including p-diamond and n-diamond materials, are presented, indicating their effectiveness as a prospective contender for high temperature and high power-based terahertz applications These detectors are expected to be a strong competitor for future THz on-chip applications due to their high sensitivity, low noise, tunability, compact size, mobility, faster response time, room temperature operation, and lower cost. Furthermore, when plasma wave instabilities are induced with the proper biasing, the same devices can be employed as THz emitters, which are expected to have a higher emission power. Another key contribution is developing a method for detecting counterfeit, damaged, forged, or defective ICs has been devised utilizing a new non-destructive and unobtrusive terahertz testing approach to address the crucial point of hardware cybersecurity and system reliability. The response of MMICs, VLSI, and ULSIC to incident terahertz and sub-terahertz radiation at the circuit pins are measured and analyzed using deep learning. More sophisticated terahertz response profiles and signatures of specific ICs can be created by measuring a more significant number of pins under different frequencies, polarizations, and depth of focus. The proposed method has no effect on ICs operation and could provide precise ICs signatures. The classification process between the secure and unsecure ICs images has been explained using data augmentation and transfer learning-based convolution neural network with ~98% accuracy. A planar nanomatryoshka type core-shell resonator with hybrid toroidal moments is shown both experimentally and analytically, allowing unique characteristics to be explored. This resonator may be utilized for accurate sensing, immunobiosensing, quick switching, narrow-band filters, and other applications

Silicon- and Graphene-based FETs for THz technology

[EN] This Thesis focuses on the study of the response to Terahertz (THz) electromagnetic radiation of different silicon substrate-compatible FETs. Strained-Si MODFETs, state-of- the-art FinFETs and graphene-FETs were studied. The first part of this thesis is devoted to present the results of an experimental and theoretical study of strained-Si MODFETs. These transistors are built by epitaxy of relaxed-SiGe on a conventional Si wafer to permit the fabrication of a strained-Si electron channel to obtain a high-mobility electron gas. Room temperature detection under excitation of 0.15 and 0.3 THz as well as sensitivity to the polarization of incoming radiations were demonstrated. A two-dimensional hydrodynamic-model was developed to conduct TCAD simulations to understand and predict the response of the transistors. Both experimental data and TCAD results were in good agreement demonstrating both the potential of TCAD as a tool for the design of future new THz devices and the excellent performance of strained-Si MODFETs as THz detectors (75 V/W and 0.06 nW/Hz0.5). The second part of the Thesis reports on an experimental study on the THz behavior of modern silicon FinFETs at room temperature. Silicon FinFETs were characterized in the frequency range 0.14-0.44 THz. The results obtained in this study show the potential of these devices as THz detectors in terms of their excellent Responsivity and NEP figures (0.66 kV/W and 0.05 nW/Hz0.5). Finally, a large part of the Thesis is devoted to the fabrication and characterization of Graphene-based FETs. A novel transfer technique and an in-house-developed setup were implemented in the Nanotechnology Clean Room of the USAL and described in detail in this Thesis. The newly developed transfer technique enables to encapsulate a graphene layer between two flakes of h-BN. Raman measurements confirmed the quality of the fabricated graphene heterostructures and, thus, the excellent properties of encapsulated graphene. The asymmetric dual grating gate graphene FET (ADGG-GFET) concept was introduced as an efficient way to improve the graphene response to THz radiation. High quality ADGG-GFETs were fabricated and characterized under THz radiation. DC measurements confirmed the high quality of graphene heterostructures as it was shown on Raman measurements. A clear THz detection was found for both 0.15 THz and 0.3 THz at 4K when the device was voltage biased either using the back or the top gate of the G-FET. Room temperature THz detection was demonstrated at 0.3 THz using the ADGG-GFET. The device shows a Responsivity and NEP around 2.2 mA/W and 0.04 nW/Hz0.5 respectively at respectively at 4K. It was demonstrated the practical use of the studied devices for inspection of hidden objects by using the in-house developed THz imaging system

APPLICATIONS OF PLASMONICS FOR TERAHERTZ DETECTION, MODULATION AND WAVEGUIDING

Ph.DDOCTOR OF PHILOSOPH

Epigraphene : epitaxial graphene on silicon carbide

This article presents a review of epitaxial graphene on silicon carbide, from fabrication to properties, put in the context of other forms of graphene.Comment: 46 pages, 322 references, 35 figures. Submitted December 201

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.Peer ReviewedPostprint (published version

Design methodology for graphene tunable filters at the sub–millimeter–wave frequencies

Tunable components and circuits, allowing for the fast switching between the states of operation, are among the basic building blocks for future communications and other emerging applications. Based on the previous thorough study of graphene based resonators, the design methodology for graphene tunable filters has been devised, outlined, as well as explained through an example of the fifth order filter. The desired filtering responses can be achieved with the material loss not higher than the loss corresponding to the previously studied single resonators, depending mostly on the quantity of graphene per resonator. The proposed design method relies on the detailed design space mapping; obtained data gives an immediate assessment of the feasibility of specifications with a particular filter order, maximal passband ripple level, desired bandwidth, and acceptable losses. The design process could be further automated by the knowledge based approach using the collected design space data

Annual Report 2020 - Institute of Ion Beam Physics and Materials Research

As for everybody else also for the Institute of Ion Beam Physics and Materials Research (IIM), the COVID-19 pandemic overshadowed the usual scientific life in 2020. Starting in March, home office became the preferred working environment and the typical institute life was disrupted. After a little relaxation during summer and early fall, the situation became again more serious and in early December we had to severely restrict laboratory activities and the user operation of the Ion Beam Center (IBC). For the most part of 2020, user visits were impossible and the services delivered had to be performed hands-off. This led to a significant additional work load on the IBC staff. Thank you very much for your commitment during this difficult period. By now user operation has restarted, but we are still far from business as usual. Most lessons learnt deal with video conference systems, and everybody now has extensive experience in skype, teams, webex, zoom, or any other solution available. Conferences were cancelled, workshops postponed, and seminar or colloquia talks delivered online. Since experimental work was also impeded, maybe 2020 was a good year for writing publications and applying for external funding. In total, 204 articles have been published with an average impact factor of about 7.0, which both mark an all-time high for the Institute. 13 publications from last year are highlighted in this Annual Report to illustrate the wide scientific spectrum of our institute. In addition, 20 new projects funded by EU, DFG, BMWi/AiF and SAB with a total budget of about 5.7 M€ have started. Thank you very much for making this possible. Also, in 2020 there have been a few personalia to be reported. Prof. Dr. Sibylle Gemming has left the HZDR and accepted a professor position at TU Chemnitz. Congratulations! The hence vacant position as the head of department was taken over by PD Dr. Artur Erbe by Oct. 1st. Simultaneously, the department has been renamed to “Nanoelectronics”. Dr. Alina Deac has left the institute in order to dedicate herself to new opportunities at the Dresden High Magnetic Field Laboratory. Dr. Matthias Posselt went to retirement after 36 years at the institute. We thank Matthias for his engagement and wish him all the best for the upcoming period of his life. However, also new equipment has been setup and new laboratories founded. A new 100 kV accelerator is integrated into our low energy ion nanoengineering facility and complements our ion beam technology in the lower energy regime. This setup is particularly suited to perform ion implantation into 2D materials and medium energy ion scattering (MEIS). Finally, we would like to cordially thank all partners, friends, and organizations who supported our progress in 2020. First and foremost we thank the Executive Board of the Helmholtz-Zentrum Dresden-Rossendorf, the Minister of Science and Arts of the Free State of Saxony, and the Ministers of Education and Research, and of Economic Affairs and Energy of the Federal Government of Germany. Many partners from univer¬sities, industry and research institutes all around the world contributed essentially, and play a crucial role for the further development of the institute. Last but not least, the directors would like to thank all members of our institute for their efforts in these very special times and excellent contributions in 2020

Two-dimensional electronics and optoelectronics

The discovery of monolayer graphene has led to a Nobel Prize in Physics in 2010. This has stimulated research on a wide variety of two-dimensional (2D) layered materials. The coupling of metallic graphene, semiconducting 2D transition metal dichalcogenides (TMDCs) and black phosphorus has attracted tremendous amount of interest in new electronic and optoelectronic applications. Together with other 2D materials such as the wide band gap boron nitride nanosheets (BNNSs), all these 2D materials have led towards an emerging field of van der Waal 2D heterostructures. This book is originally published in Electronics (MDPI) as a special issue of “Two-Dimensional Electronics and Optoelectronics”. The book consists of a total of eight papers, including two review articles, covering important topics of 2D materials. These papers represent some of the important topics on 2D materials and devices. Promises and challenges of 2D materials are discussed herein, which provide a great recent guidance for future research and development