High-efficiency high voltage hybrid charge pump design with an improved chip area

A hybrid charge pump was developed in a 0.13- $\mu \text{m}$ Bipolar-CMOS-DMOS (BCD) process which utilised high drain-source voltage MOS devices and low-voltage integrated metal-insulator-metal (MIM) capacitors. The design consisted of a zero-reversion loss cross-coupled stage and a new self-biased serial-parallel charge pump design. The latter has been shown to have an area reduction of 60% in comparison to a Schottky diode-based Dickson charge pump operating at the same frequency. Post-layout simulations were carried out which demonstrated a peak efficiency of 38% at the output voltage of 18.5 V; the maximum specified output voltage of 27 V was also achieved. A standalone serial-parallel charge pump was shown to have a better transient response and a flatter efficiency curve; these are preferable for time-sensitive applications with a requirement of a broader range of output currents. These findings have significant implications for reducing the total area of implantable high-voltage devices without sacrificing charge pump efficiency or maximum output voltage

High-Speed Wide-Field Time-Correlated Single-Photon Counting Fluorescence Lifetime Imaging Microscopy

Fluorescence microscopy is a powerful imaging technique used in the biological sciences to identify labeled components of a sample with specificity. This is usually accomplished through labeling with fluorescent dyes, isolating these dyes by their spectral signatures with optical filters, and recording the intensity of the fluorescent response. Although these techniques are widely used, fluorescence intensity images can be negatively affected by a variety of factors that impact the fluorescence intensity. Fluorescence lifetime imaging microscopy (FLIM) is an imaging technique that is relatively immune to intensity fluctuations and also provides the unique ability to directly monitor the microenvironment surrounding a fluorophore. Despite the benefits associated with FLIM, the applications to which it is applied are fairly limited due to long image acquisition times and high cost of traditional hardware. Recent advances in complementary metal-oxide-semiconductor (CMOS) single-photon avalanche diodes (SPADs) have enabled the design of low-cost imaging arrays that are capable of recording lifetime images with acquisition times greater than one order of magnitude faster than existing systems. However, these SPAD arrays have yet to realize the full potential of the technology due to limitations in their ability to handle the vast amount of data generated during the commonly used time-correlated single-photon counting (TCSPC) lifetime imaging technique. This thesis presents the design, implementation, characterization, and demonstration of a high speed FLIM imaging system. The components of this design include a CMOS imager chip in a standard 0.13 μm technology containing a custom CMOS SPAD, a 64-by-64 array of these SPADs, pixel control circuitry, independent time-to-digital converters (TDCs), a FLIM specific datapath, and high bandwidth output buffers. In addition to the CMOS imaging array, a complete system was designed and implemented using a printed circuit board (PCB) for capturing data from the imager, creating histograms for the photon arrival data using field-programmable gate arrays, and transferring the data to a computer using a cabled PCIe interface. Finally, software is used to communicate between the imaging system and a computer.The dark count rate of the SPAD was measured to be only 231 Hz at room temperature while maintaining a photon detection probability of up to 30\%. TDCs included on the array have a 62.5 ps resolution and a 64 ns range, which is suitable for measuring the lifetime of most biological fluorophores. Additionally, the on-chip datapath was designed to handle continuous data transfers at rates capable of supporting TCSPC-based lifetime imaging at 100 frames per second. The system level implementation also provides sufficient data throughput for transferring up to 750 frames per second from the imaging system to a computer. The lifetime imaging system was characterized using standard techniques for evaluating SPAD performance and an electrical delay signal for measuring the TDC performance. This thesis concludes with a demonstration of TCSPC-FLIM imaging at 100 frames per second -- the fastest 64-by-64 TCSPC FLIM that has been demonstrated. This system overcomes some of the limitations of existing FLIM systems and has the potential to enable new application domains in dynamic FLIM imaging

Development of electronics for microultrasound capsule endoscopy

Development of intracorporeal devices has surged in the last decade due to advancements in the semiconductor industry, energy storage and low-power sensing systems. This work aims to present a thorough systematic overview and exploration of the microultrasound (µUS) capsule endoscopy (CE) field as the development of electronic components will be key to a successful applicable µUSCE device. The research focused on investigating and designing high-voltage (HV, < 36 V) generating and driving circuits as well as a low-noise amplifier (LNA) for battery-powered and volume-limited systems. In implantable applications, HV generation with maximum efficiency is required to improve the operational lifetime whilst reducing the cost of the device. A fully integrated hybrid (H) charge pump (CP) comprising a serial-parallel (SP) stage was designed and manufactured for > 20 V and 0 - 100 µA output capabilities. The results were compared to a Dickson (DKCP) occupying the same chip area; further improvements in the SPCP topology were explored and a new switching scheme for SPCPs was introduced. A second regulated CP version was excogitated and manufactured to use with an integrated µUS pulse generator. The CP was manufactured and tested at different output currents and capacitive loads; its operation with an US pulser was evaluated and a novel self-oscillating CP mechanism to eliminate the need of an auxiliary clock generator with a minimum area overhead was devised. A single-output universal US pulser was designed, manufactured and tested with 1.5 MHz, 3 MHz, and 28 MHz arrays to achieve a means of fully-integrated, low-power transducer driving. The circuit was evaluated for power consumption and pulse generation capabilities with different loads. Pulse-echo measurements were carried out and compared with those from a commercial US research system to characterise and understand the quality of the generated pulse. A second pulser version for a 28 MHz array was derived to allow control of individual elements. The work involved its optimisation methodology and design of a novel HV feedback-based level-shifter. A low-noise amplifier (LNA) was designed for a wide bandwidth µUS array with a centre frequency of 28 MHz. The LNA was based on an energy-efficient inverter architecture. The circuit encompassed a full power-down functionality and was investigated for a self-biased operation to achieve lower chip area. The explored concepts enable realisation of low power and high performance LNAs for µUS frequencies

Photodetectors

In this book some recent advances in development of photodetectors and photodetection systems for specific applications are included. In the first section of the book nine different types of photodetectors and their characteristics are presented. Next, some theoretical aspects and simulations are discussed. The last eight chapters are devoted to the development of photodetection systems for imaging, particle size analysis, transfers of time, measurement of vibrations, magnetic field, polarization of light, and particle energy. The book is addressed to students, engineers, and researchers working in the field of photonics and advanced technologies

MEMS piezoelectric vibrational energy harvesters and circuits for IoT applications

In the Internet of Things (IoT) world, more and more sensor nodes are being deployed and more mobile power sources are required. Alternative solutions to batteries are the subjects of worldwide extended research. Among the possibilities is the harvesting of energy from the ambient. A novel energy harvesting system to power wireless sensor nodes is a necessity and inevitable path, with more and more market interest. Microelectromechnaical systems (MEMS) based piezoelectric vibrational energy harvesters (PVEH) are considered in this thesis due to their good energy densities, conversion efficiency, suitability for miniaturization and CMOS integration. Cantilever beams are favored for their relatively high average strains, low frequencies and simplicity of fabrication. Proof masses are essential in micro scale devices in order to decrease the resonance frequency and increase the strain along the beam to increase the output power. In this thesis, the effects of proof mass geometry on piezoelectric vibration energy harvesters are studied. Different geometrical dimension ratios have significant impact on the resonance frequency, e.g., beam to mass lengths, and beam to mass widths. The responses of various prototypes are studied. Furthermore, the impact of geometry on the performance of cantilever-based PVEH is investigated. Namely, rectangular and trapezoidal T-shaped designs are fabricated and tested. Optimized cross-shaped geometries are fabricated using a commercial technology PiezoMUMPs process from MEMSCAP. They are characterized for their resonant frequency, strain distribution and output power. The output of an energy harvester is not directly suited as a power supply for circuits because of variations in its power and voltage over time, therefore a power management circuit is required. The circuit meets the requirements of responding to an input voltage that varies with the ambient conditions to generate a regulated output voltage, and the ability to power multiple outputs from a fixed input voltage. In this thesis, new design architectures for a reconfigurable circuit are considered. A charge pump which modifies dynamically the number of stages to generate a plurality of voltage levels has been designed and fabricated using a CMOS 0.13 μm technology. This provides biasing voltages for electrostatic MEMS devices. Electrostatic MEMS require relatively high and variable actuation voltages and the fabricated circuit serves this goal and attains a measured maximum output voltage of 10.1 V from a 1.2 V supply. In this thesis, design recommendations are given and MEMS piezoelectric harvesters are implemented and validated through fabrications. T-shaped harvesters bring improvements over cantilever designs, namely the trapezoidal T-shaped structures. A cross-shaped design has the advantage of utilizing four beams and the proposed proof mass improves the performance significantly. A cross-coupled circuit rectifies the output efficiently towards an optimal energy harvesting solution

Injection locked ring oscillator design for application in Direct Time of Flight LIDAR

Diplomová práce přibližuje systémy LIDAR přímo měřící čas průletu a časově digitální převodníky určené k použití v těchto systémech. Představuje problematiku distribuce hodinových signálů napříč soubory časově digitálních převodníků v LIDAR systémech a věnuje se jednomu z nových řešení této problematiky, které je založené na injekcí zavěšených oscilátorech. Technika injekčního zavěšení oscilátorů je důkladně matematicky popsána. V programu Matlab byl vytvořen simulační model injekcí zavěšeného kruhového oscilátoru, který potvrzuje správnost uvedených analytických predikcí. Ve výrobní technologii ONK65 byl navržen injekcí zavěšený kruhový oscilátor stabilizovaný pomocí smyčky závěsu zpoždění, určený pro implementaci časově digitálního převodníku pro systém LIDAR. Navržený injekcí zavěšený kruhový oscilátor byl verifikován počítačovými simulacemi zohledňujícími vliv procesních, napěťových i teplotních variací. Oscilátor poskytuje specifikované časové rozlišení 50 pikosekund a dosahuje dvakrát nižší hodnoty fázového neklidu než ekvivalentní volnoběžný oscilátor v dané technologii.The diploma thesis provides an introduction to Direct Time of Flight LIDAR systems and Time to Digital Converters used in these systems. It discusses the problem of clock distribution in LIDAR Time to Digital Converter arrays, and examines one of the possible solutions to this problem based on injection locked oscillators. The injection locking phenomenon is thoroughly mathematically described and a Matlab model of an injection locked ring oscillator is presented, confirming the analytic predictions. In ONK65 processing technology, an injection locked ring oscillator biased by a delay locked loop meant specifically for application in Time to Digital Converters for LIDAR systems has been designed. The designed oscillator has been verified by computer simulations taking process, voltage and temperature variations into account and offers specified time resolution of 50 picosecond as well as two times less clock jitter than an equivalent free-running oscillator in the given processing technology.

Germanium on silicon photonic devices

There is presently increased interest in using germanium (Ge) for both electronic and optical devices on top of silicon (Si) substrates to expand the functionality of Si technology. It has been extremely difficult to form an Ohmic contact to n-Ge due to Fermi level pinning just above the Valence band. A low temperature nickel process has been developed that produces Ohmic contacts to n-Ge with a specific contact resistivity of , which to date is a record. The low contact resistivity is attributed to the low resistivity NiGe phase, which was identified using electron diffraction in a transmission electron microscope. Light emission from Ge light emitting diodes (LEDs) was investigated. Ge is an indirect bandgap semiconductor but the difference in energy between the direct and indirect is small (~136 meV), through a combination of n-type doping and tensile strain, the band structure can be engineered to produce a more direct bandgap material. A silicon nitride (Si3N4) process has been developed that imparts tensile strain into the Ge. The stress in the Si3N4 film can be controlled by the RF power used during the plasma enhanced chemical vapour deposition. LEDs covered with Si3N4 stressors were characterised by Fourier transform infrared spectroscopy. Electroluminescence characterisation (EL) revealed that the peak position of the direct and indirect radiative transitions did not vary with the Si3N4 stressors due to the device geometries being too large. Therefore, nanostructures consisting of pillars smaller than a micron were investigated. Photoluminescence characterisation of 100 nm Ge pillars with Si3N4 stressors show emission at much longer wavelengths compared to bulk Ge (> 2.2 μm). In addition, the EL from Ge quantum wells grown on Si was also investigated. EL characterisation demonstrates two peaks around 1.55 and 1.8 μm, which corresponds to the radiative recombination between the direct and indirect transitions, respectively. This result is the first demonstration of EL above 1.45 μm for Ge quantum wells. Finally, the fabrication of Ge-on-Si single-photon avalanche detectors are presented. A single-photon detection efficiency of 4 % at 1310 nm wavelength was measured at low temperature (100 K). The devices have the lowest reported noise equivalent power for a Ge-on-Si single-photon avalanche detector (1×10-14 WHz-1/2)

A Low-Power Silicon-Photomultiplier Readout ASIC for the CALICE Analog Hadronic Calorimeter

The future e + e − collider experiments, such as the international linear collider, provide precise measurements of the heavy bosons and serve as excellent tests of the underlying fundamental physics. To reconstruct these bosons with an unprecedented resolution from their multi-jet final states, a detector system employing the particle flow approach has been proposed, requesting calorimeters with imaging capabilities. The analog hadron calorimeter based on the SiPM-on-tile technology is one of the highly granular candidates of the imaging calorimeters. To achieve the compactness, the silicon-photomultiplier (SiPM) readout electronics require a low-power monolithic solution. This thesis presents the design of such an application-specific integrated circuit (ASIC) for the charge and timing readout of the SiPMs. The ASIC provides precise charge measurement over a large dynamic range with auto-triggering and local zero-suppression functionalities. The charge and timing information are digitized using channel-wise analog-to-digital and time-to-digital converters, providing a fully integrated solution for the SiPM readout. Dedicated to the analog hadron calorimeter, the power-pulsing technique is applied to the full chip to meet the stringent power consumption requirement. This work also initializes the commissioning of the calorimeter layer with the use of the designed ASIC. An automatic calibration procedure has been developed to optimized the configuration settings for the chip. The new calorimeter base unit with the designed ASIC has been produced and its functionality has been tested

Potential and Challenges of Analog Reconfigurable Computation in Modern and Future CMOS

In this work, the feasibility of the floating-gate technology in analog computing platforms in a scaled down general-purpose CMOS technology is considered. When the technology is scaled down the performance of analog circuits tends to get worse because the process parameters are optimized for digital transistors and the scaling involves the reduction of supply voltages. Generally, the challenge in analog circuit design is that all salient design metrics such as power, area, bandwidth and accuracy are interrelated. Furthermore, poor flexibility, i.e. lack of reconfigurability, the reuse of IP etc., can be considered the most severe weakness of analog hardware. On this account, digital calibration schemes are often required for improved performance or yield enhancement, whereas high flexibility/reconfigurability can not be easily achieved. Here, it is discussed whether it is possible to work around these obstacles by using floating-gate transistors (FGTs), and analyze problems associated with the practical implementation. FGT technology is attractive because it is electrically programmable and also features a charge-based built-in non-volatile memory. Apart from being ideal for canceling the circuit non-idealities due to process variations, the FGTs can also be used as computational or adaptive elements in analog circuits. The nominal gate oxide thickness in the deep sub-micron (DSM) processes is too thin to support robust charge retention and consequently the FGT becomes leaky. In principle, non-leaky FGTs can be implemented in a scaled down process without any special masks by using “double”-oxide transistors intended for providing devices that operate with higher supply voltages than general purpose devices. However, in practice the technology scaling poses several challenges which are addressed in this thesis. To provide a sufficiently wide-ranging survey, six prototype chips with varying complexity were implemented in four different DSM process nodes and investigated from this perspective. The focus is on non-leaky FGTs, but the presented autozeroing floating-gate amplifier (AFGA) demonstrates that leaky FGTs may also find a use. The simplest test structures contain only a few transistors, whereas the most complex experimental chip is an implementation of a spiking neural network (SNN) which comprises thousands of active and passive devices. More precisely, it is a fully connected (256 FGT synapses) two-layer spiking neural network (SNN), where the adaptive properties of FGT are taken advantage of. A compact realization of Spike Timing Dependent Plasticity (STDP) within the SNN is one of the key contributions of this thesis. Finally, the considerations in this thesis extend beyond CMOS to emerging nanodevices. To this end, one promising emerging nanoscale circuit element - memristor - is reviewed and its applicability for analog processing is considered. Furthermore, it is discussed how the FGT technology can be used to prototype computation paradigms compatible with these emerging two-terminal nanoscale devices in a mature and widely available CMOS technology.Siirretty Doriast