FOCSI: A new layout regularity metric

Technical ReportDigital CMOS Integrated Circuits (ICs) suffer from serious layout features printability issues associated to the lithography manufacturing process. Regular layout designs are emerging as alternative solutions to reduce these ICs systematic subwavelength lithography failures. However, there is no metric to evaluate and compare the layout regularity of those regular designs. In this paper we propose a new layout regularity metric called Fixed Origin Corner Square Inspection (FOCSI). FOCSI allows the comparison and quantification of designs in terms of regularity and for any given degree of granularity. When FOCSI is oriented to the evaluation of regularity while applying Lithography Enhancement Techniques, it comprehends layout layers measurements considering the optical interaction length and combines them to obtain the complete layout regularity measure. Examples are provided for 32-bit adders in the 90 nm technology node for the Standard Cell approach and for Via-Configurable Transistor Array regular designs. We show how layouts can be sorted accurately even if their degree of regularity is similar.Preprin

Layout regularity metric as a fast indicator of process variations

Integrated circuits design faces increasing challenge as we scale down due to the increase of the effect of sensitivity to process variations. Systematic variations induced by different steps in the lithography process affect both parametric and functional yields of the designs. These variations are known, themselves, to be affected by layout topologies. Design for Manufacturability (DFM) aims at defining techniques that mitigate variations and improve yield. Layout regularity is one of the trending techniques suggested by DFM to mitigate process variations effect. There are several solutions to create regular designs, like restricted design rules and regular fabrics. These regular solutions raised the need for a regularity metric. Metrics in literature are insufficient for different reasons; either because they are qualitative or computationally intensive. Furthermore, there is no study relating either lithography or electrical variations to layout regularity. In this work, layout regularity is studied in details and a new geometrical-based layout regularity metric is derived. This metric is verified against lithographic simulations and shows good correlation. Calculation of the metric takes only few minutes on 1mm x 1mm design, which is considered fast compared to the time taken by simulations. This makes it a good candidate for pre-processing the layout data and selecting certain areas of interest for lithographic simulations for faster throughput. The layout regularity metric is also compared against a model that measures electrical variations due to systematic lithographic variations. The validity of using the regularity metric to flag circuits that have high variability using the developed electrical variations model is shown. The regularity metric results compared to the electrical variability model results show matching percentage that can reach 80%, which means that this metric can be used as a fast indicator of designs more susceptible to lithography and hence electrical variations

DFM Techniques for the Detection and Mitigation of Hotspots in Nanometer Technology

With the continuous scaling down of dimensions in advanced technology nodes, process variations are getting worse for each new node. Process variations have a large influence on the quality and yield of the designed and manufactured circuits. There is a growing need for fast and efficient techniques to characterize and mitigate the effects of different sources of process variations on the design's performance and yield. In this thesis we have studied the various sources of systematic process variations and their effects on the circuit, and the various methodologies to combat systematic process variation in the design space. We developed abstract and accurate process variability models, that would model systematic intra-die variations. The models convert the variation in process into variation in electrical parameters of devices and hence variation in circuit performance (timing and leakage) without the need for circuit simulation. And as the analysis and mitigation techniques are studied in different levels of the design ow, we proposed a flow for combating the systematic process variation in nano-meter CMOS technology. By calculating the effects of variability on the electrical performance of circuits we can gauge the importance of the accurate analysis and model-driven corrections. We presented an automated framework that allows the integration of circuit analysis with process variability modeling to optimize the computer intense process simulation steps and optimize the usage of variation mitigation techniques. And we used the results obtained from using this framework to develop a relation between layout regularity and resilience of the devices to process variation. We used these findings to develop a novel technique for fast detection of critical failures (hotspots) resulting from process variation. We showed that our approach is superior to other published techniques in both accuracy and predictability. Finally, we presented an automated method for fixing the lithography hotspots. Our method showed success rate of 99% in fixing hotspots

Regular cell design approach considering lithography-induced process variations

The deployment delays for EUVL, forces IC design to continue using 193nm wavelength lithography with innovative and costly techniques in order to faithfully print sub-wavelength features and combat lithography induced process variations. The effect of the lithography gap in current and upcoming technologies is to cause severe distortions due to optical diffraction in the printed patterns and thus degrading manufacturing yield. Therefore, a paradigm shift in layout design is mandatory towards more regular litho-friendly cell designs in order to improve line pattern resolution. However, it is still unclear the amount of layout regularity that can be introduced and how to measure the benefits and weaknesses of regular layouts. This dissertation is focused on searching the degree of layout regularity necessary to combat lithography variability and outperform the layout quality of a design. The main contributions that have been addressed to accomplish this objective are: (1) the definition of several layout design guidelines to mitigate lithography variability; (2) the proposal of a parametric yield estimation model to evaluate the lithography impact on layout design; (3) the development of a global Layout Quality Metric (LQM) including a Regularity Metric (RM) to capture the degree of layout regularity of a layout implementation and; (4) the creation of different layout architectures exploiting the benefits of layout regularity to outperform line-pattern resolution, referred as Adaptive Lithography Aware Regular Cell Designs (ALARCs). The first part of this thesis provides several regular layout design guidelines derived from lithography simulations so that several important lithography related variation sources are minimized. Moreover, a design level methodology, referred as gate biasing, is proposed to overcome systematic layout dependent variations, across-field variations and the non-rectilinear gate effect (NRG) applied to regular fabrics by properly configuring the drawn transistor channel length. The second part of this dissertation proposes a lithography yield estimation model to predict the amount of lithography distortion expected in a printed layout due to lithography hotspots with a reduced set of lithography simulations. An efficient lithography hotspot framework to identify the different layout pattern configurations, simplify them to ease the pattern analysis and classify them according to the lithography degradation predicted using lithography simulations is presented. The yield model is calibrated with delay measurements of a reduced set of identical test circuits implemented in a CMOS 40nm technology and thus actual silicon data is utilized to obtain a more realistic yield estimation. The third part of this thesis presents a configurable Layout Quality Metric (LQM) that considering several layout aspects provides a global evaluation of a layout design with a single score. The LQM can be leveraged by assigning different weights to each evaluation metric or by modifying the parameters under analysis. The LQM is here configured following two different set of partial metrics. Note that the LQM provides a regularity metric (RM) in order to capture the degree of layout regularity applied in a layout design. Lastly, this thesis presents different ALARC designs for a 40nm technology using different degrees of layout regularity and different area overheads. The quality of the gridded regular templates is demonstrated by automatically creating a library containing 266 cells including combinational and sequential cells and synthesizing several ITC'99 benchmark circuits. Note that the regular cell libraries only presents a 9\% area penalty compared to the 2D standard cell designs used for comparison and thus providing area competitive designs. The layout evaluation of benchmark circuits considering the LQM shows that regular layouts can outperform other 2D standard cell designs depending on the layout implementation.Los continuos retrasos en la implementación de la EUVL, fuerzan que el diseño de IC se realice mediante litografía de longitud de onda de 193 nm con innovadoras y costosas técnicas para poder combatir variaciones de proceso de litografía. La gran diferencia entre la longitud de onda y el tamaño de los patrones causa severas distorsiones debido a la difracción óptica en los patrones impresos y por lo tanto degradando el yield. En consecuencia, es necesario realizar un cambio en el diseño de layouts hacia diseños más regulares para poder mejorar la resolución de los patrones. Sin embargo, todavía no está claro el grado de regularidad que se debe introducir y como medir los beneficios y los perjuicios de los diseños regulares. El objetivo de esta tesis es buscar el grado de regularidad necesario para combatir las variaciones de litografía y mejorar la calidad del layout de un diseño. Las principales contribuciones para conseguirlo son: (1) la definición de diversas reglas de diseño de layout para mitigar las variaciones de litografía; (2) la propuesta de un modelo para estimar el yield paramétrico y así evaluar el impacto de la litografía en el diseño de layout; (3) el diseño de una métrica para analizar la calidad de un layout (LQM) incluyendo una métrica para capturar el grado de regularidad de un diseño (RM) y; (4) la creación de diferentes tipos de layout explotando los beneficios de la regularidad, referidos como Adaptative Lithography Aware Regular Cell Designs (ALARCs). La primera parte de la tesis, propone las diversas reglas de diseño para layouts regulares derivadas de simulaciones de litografía de tal manera que las fuentes de variación de litografía son minimizadas. Además, se propone una metodología de diseño para layouts regulares, referida como "gate biasing" para contrarrestar las variaciones sistemáticas dependientes del layout, las variaciones en la ventana de proceso del sistema litográfico y el efecto de puerta no rectilínea para configurar la longitud del canal del transistor correctamente. La segunda parte de la tesis, detalla el modelo de estimación del yield de litografía para predecir mediante un número reducido de simulaciones de litografía la cantidad de distorsión que se espera en un layout impreso debida a "hotspots". Se propone una eficiente metodología que identifica los distintos patrones de un layout, los simplifica para facilitar el análisis de los patrones y los clasifica en relación a la degradación predecida mediante simulaciones de litografía. El modelo de yield se calibra utilizando medidas de tiempo de un número reducido de idénticos circuitos de test implementados en una tecnología CMOS de 40nm y de esta manera, se utilizan datos de silicio para obtener una estimación realista del yield. La tercera parte de este trabajo, presenta una métrica para medir la calidad del layout (LQM), que considera diversos aspectos para dar una evaluación global de un diseño mediante un único valor. La LQM puede ajustarse mediante la asignación de diferentes pesos para cada métrica de evaluación o modificando los parámetros analizados. La LQM se configura mediante dos conjuntos de medidas diferentes. Además, ésta incluye una métrica de regularidad (RM) para capturar el grado de regularidad que se aplica en un diseño. Finalmente, esta disertación presenta los distintos diseños ALARC para una tecnología de 40nm utilizando diversos grados de regularidad y diferentes impactos en área. La calidad de estos diseños se demuestra creando automáticamente una librería de 266 celdas incluyendo celdas combinacionales y secuenciales y, sintetizando diversos circuitos ITC'99. Las librerías regulares solo presentan un 9% de impacto en área comparado con diseños de celdas estándar 2D y por tanto proponiendo diseños competitivos en área. La evaluación de los circuitos considerando la LQM muestra que los diseños regulares pueden mejorar otros diseños 2D dependiendo de la implementación del layout

On the Canonical Reduction of Spherically Symmetric Gravity

In a thorough paper Kuchar has examined the canonical reduction of the most general action functional describing the geometrodynamics of the maximally extended Schwarzschild geometry. This reduction yields the true degrees of freedom for (vacuum) spherically symmetric general relativity. The essential technical ingredient in Kuchar's analysis is a canonical transformation to a certain chart on the gravitational phase space which features the Schwarzschild mass parameter $M_{S}$, expressed in terms of what are essentially Arnowitt-Deser-Misner variables, as a canonical coordinate. In this paper we discuss the geometric interpretation of Kuchar's canonical transformation in terms of the theory of quasilocal energy-momentum in general relativity given by Brown and York. We find Kuchar's transformation to be a ``sphere-dependent boost to the rest frame," where the ``rest frame'' is defined by vanishing quasilocal momentum. Furthermore, our formalism is general enough to cover the case of (vacuum) two-dimensional dilaton gravity. Therefore, besides reviewing Kucha\v{r}'s original work for Schwarzschild black holes from the framework of hyperbolic geometry, we present new results concerning the canonical reduction of Witten-black-hole geometrodynamics.Comment: Revtex, 35 pages, no figure

An Integrated Geometric and Material Survey for the Conservation of Heritage Masonry Structures

This paper reports the knowledge process and the analyses performed to assess the seismic behavior of a heritage masonry building. The case study is a three-story masonry building that was the house of the Renaissance architect and painter Giorgio Vasari (the Vasari’s House museum). An interdisciplinary approach was adopted, following the Italian “Guidelines for the assessment and mitigation of the seismic risk of the cultural heritage”. This document proposes a methodology of investigation and analysis based on three evaluation levels (EL1, analysis at territorial level; EL2, local analysis and EL3, global analysis), according to an increasing level of knowledge on the building. A comprehensive knowledge process, composed by a 3D survey by Terrestrial Laser Scanning (TLS) and experimental in situ tests, allowed us to identify the basic structural geometry and to assess the value of mechanical parameters subsequently needed to perform a reliable structural assessment. The museum represents a typology of masonry building extremely diffused in the Italian territory, and the assessment of its seismic behavior was performed by investigating its global behavior through the EL1 and the EL3 analyses

Spreadsheet Tools for Data Analysts

Spreadsheets are a natural fit for data analysis, combining a simple data storage and presentation layer with a programming language and basic debugging tools. Because spreadsheets are accessible and flexible, they are used by both novices and experts. Consequently, spreadsheets are hugely popular, with more than 750 million copies of Microsoft Excel installed worldwide. This popularity means that spreadsheets are the most popular programming language on the planet and the de facto tool for data analysis. Nevertheless, spreadsheets do not address a number of important tasks in a typical analyst\u27s pipeline, and their design frequently complicates them. This thesis describes three key challenges for analysts using spreadsheets. 1) Data wrangling is the process of converting or mapping data from a raw form into another form suitable for use with automated tools. 2) Data cleaning is the process of locating and correcting omitted or erroneous data. 3) Formula auditing is the process of finding and correcting spreadsheet program errors. These three tasks combined are estimated to occupy more than three quarters of a data analyst\u27s time. Furthermore, errors not caught during these steps have led to catastrophically bad decisions resulting in billions of dollars in losses. Advances in automated techniques for these tasks may result in dramatic savings in both time and money. Three novel programming language-based techniques were created to address these key tasks. The first, automatic layout transformation using examples, is a program synthesis-based technique that lets spreadsheet users perform data wrangling tasks automatically, at scale, and without programming. The second, data debugging, is technique for data cleaning that combines program analysis and statistical analysis to automatically find likely data errors. The third, spatio-structural program analysis unifies positional and dependence information and finds spreadsheet errors using a kind of anomaly analysis. Each technique was implemented as an end-user tool---FlaskRelate, CheckCell, and ExceLint respectively---in the form of a point-and-click plugin for Microsoft Excel. Our evaluation demonstrates that these techniques substantially improve user efficiency. Finally, because these tools build on each other in a complementary fashion, data analysts can run data wrangling, cleaning, and formula auditing tasks together in a single analysis pipeline

The structure and function of diagrams in environmental design : a computational inquiry

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Urban Studies and Planning, 1989.Vita.Includes bibliographical references (leaves 252-261).by Stephen McTee Ervin.Ph.D