1,082 research outputs found

    Influence of strain on the functionality of ink-jet printed thin films and devices on flexible substrates

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    Ink-jet printed devices on the flexible substrate are inexpensive and large area compatible as compared to rigid substrates. However, during fabrication and service they are subjected to complex strains, resulting in crack formation or delamination within the layers, affecting the device performance. Therefore, it is necessary to understand their failure mechanisms by correlating their electrical or structural properties with applied strain, supported by detailed microstructural investigations

    Hybrid Nanomaterials

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    Two of the hottest research topics today are hybrid nanomaterials and flexible electronics. As such, this book covers both topics with chapters written by experts from across the globe. Chapters address hybrid nanomaterials, electronic transport in black phosphorus, three-dimensional nanocarbon hybrids, hybrid ion exchangers, pressure-sensitive adhesives for flexible electronics, simulation and modeling of transistors, smart manufacturing technologies, and inorganic semiconductors

    High-throughput large-area plastic nanoelectronics

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    Large-area electronics (LAE) manufacturing has been a key focus of both academic and industrial research, especially within the last decade. The growing interest is born out of the possibility of adding attractive properties (flexibility, light weight or minimal thickness) at low cost to well-established technologies, such as photovoltaics, displays, sensors or enabling the realisation of emerging technologies such as wearable devices and the Internet of Things. As such there has been great progress in the development of materials specifically designed to be employed in solution processed (plastic) electronics, including organic, transparent metal oxide and nanoscale semiconductors, as well as progress in the deposition methods of these materials using low-cost high-throughput printing techniques, such as gravure printing, inkjet printing, and roll-to-roll vacuum deposition. Meanwhile, industry innovation driven by Moore’s law has pushed conventional silicon-based electronic components to the nanoscale. The processes developed for LAE must strive to reach these dimensions. Given that the complex and expensive patterning techniques employed by the semiconductor industry so far are not compatible with LAE, there is clearly a need to develop large-area high throughput nanofabrication techniques. This thesis presents progress in adhesion lithography (a-Lith), a nanogap electrode fabrication process that can be applied over large areas on arbitrary substrates. A-Lith is a self-alignment process based on the alteration of surface energies of a starting metal electrode which allows the removal of any overlap of a secondary metal electrode. Importantly, it is an inexpensive, scalable and high throughput technique, and, especially if combined with low temperature deposition of the active material, it is fundamentally compatible with large-area fabrication of nanoscale electronic devices on flexible (plastic) substrates. Herein, I present routes towards process optimisation with a focus on gap size reduction and yield maximisation. Asymmetric gaps with sizes below 10 nm and yields of > 90 % for hundreds of electrode pairs generated on a single substrate are demonstrated. These large width electrode nanogaps represent the highest aspect ratio nanogaps (up to 108) fabricated to date. As a next step, arrays of Schottky nanodiodes are fabricated by deposition of a suitable semiconductor from solution into the nanogap structures. Of principal interest is the wide bandgap transparent semiconductor, zinc oxide (ZnO). Lateral ZnO Schottky diodes show outstanding characteristics, with on-off ratios of up to 106 and forward current values up to 10 mA for obtained upon combining a-Lith with low-temperature solution processing. These unique devices are further investigated for application in rectifier circuits, and in particular for potential use in radio frequency identification (RFID) tag technology. The ZnO diodes are found to surpass the 13.56 MHz frequency bernchmark used in commercial applications and approach the ultra-high frequency (UHF) band (hundreds of megahertz), outperforming current state of the art printed diodes. Solution processed fullerene (C60) is also shown to approach the UHF band in this co-planar device configuration, highlighting the viability of a-Lith for enabling large-area flexible radio frequency nanoelectronics. Finally, resistive switching memory device arrays based on a-Lith patterned nanogap aluminium symmetric electrodes are demonstrated for the first time. These devices are based either on empty aluminium nanogap electrodes, or with the gap filled with a solution-processed semiconductor, the latter being ZnO, the semiconducting polymer poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) or carbon nanotube/polyfluorene blends. The switching mechanism, retention time and switching speed are investigated and compared with published data. The fabrication of arrays of these devices illustrates the potential of a-Lith as a simple technique for the realisation of large-area high-density memory applications.Open Acces

    Interface and Morphology Engineering in Solution-Processed Electronic and Optoelectronic Devices

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    The first part of this dissertation focuses on interface and morphology engineering in polymer- and small molecule-based organic solar cells. High-performance devices were fabricated, and the device performance was correlated with nanoscale structures using various electrical, spectroscopic and microscopic characterization techniques, providing guidelines for high-efficiency cell design. The second part focuses on perovskite solar cells (PSCs), an emerging photovoltaic technology with skyrocketing rise in power conversion efficiency (PCE) and currently showing comparable PCEs with those of existing thin film photovoltaic technologies such as CIGS and CdTe. Fabrication of large-area PSCs without compromising reproducibility and device PCE requires formation of dense, pinhole-free and highly uniform perovskite thin films over large area, which remains a big challenge as of today. In this work, a scalable process, called ultrasonic spray-coating (USC), was thoroughly optimized to deposit dense and uniform perovskite thin films for high-efficiency PSCs. In order to realize high-performance flexible PSCs, a unique photonic curing technique was demonstrated to achieve highly conductive TiO2 as electron transport layer on flexible substrates. Moreover, the effect of processing conditions on perovskite film growth was evaluated and taken into account to increase PCE to more than 15%. In addition, a series of high-performance organic field-effect transistors (OFETs) were fabricated en route to demonstrate the versatility of the USC process. Several different polymer binders were used to modulate the lateral and vertical phase morphologies in OFETs, significantly improving the device performance. In summary, this research provides guidelines for the design and fabrication of high-performance solution-processed solar cells and field-effect transistors based on organic materials and hybrid perovskites, while presenting a viable route for large-scale fabrication

    Organic Bioelectronics Development in Italy: A Review

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    In recent years, studies concerning Organic Bioelectronics have had a constant growth due to the interest in disciplines such as medicine, biology and food safety in connecting the digital world with the biological one. Specific interests can be found in organic neuromorphic devices and organic transistor sensors, which are rapidly growing due to their low cost, high sensitivity and biocompatibility. This trend is evident in the literature produced in Italy, which is full of breakthrough papers concerning organic transistors-based sensors and organic neuromorphic devices. Therefore, this review focuses on analyzing the Italian production in this field, its trend and possible future evolutions

    Inkjet printed metal oxide thin film transistors incorporating polyethyleneimine

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    Fully inkjet printed fabrication of thin film transistors (TFTs) is desirable to enable reproducible, high throughput, low cost production of electronics under mild conditions. However, TFT devices fabricated from printable materials typically exhibit inferior performance to those of non-printed. For example, there is a lack of well performing source-drain electrode materials for metal oxide semiconductors. In contrast to vacuum-deposited Al, printed Ag has a high contact resistance and work function, with poor charge carrier injection to the semiconductor. Therefore, there is a requirement to improve electrical performance of TFTs incorporating printed electrode material such as Ag. The approach to achieve this through this work is by inclusion of an inkjet printed thin film of polyethyleneimine (PEI) at the interface between semiconductor and source-drain contacts. PEI contains tertiary amine groups, which possess lone pairs of electrons available to assist charge injection and lower the interfacial resistance. Two sets of reference devices were prepared, both with inkjet printed In2O3 semiconductor. One set was fabricated by vacuum deposition of Al for source drain electrodes, the other set with inkjet printed Ag source drain contact electrodes. The solution-based processing method limits the thermal budget to 300°C. Devices with Al electrodes provided charge carrier saturation mobility (μsat) of 4.3 ± 0.93 cm2 V-1 s-1, whereas those with Ag contacts exhibited an expected lower μsat of 8.0·10-3 ± 3.9·10-3 cm2 V-1 s-1. Addition of an inkjet printed interfacial thin film containing PEI between the semiconductor and Ag contact electrodes significantly increased the μsat to 3.1 ± 0.53 cm2 V-1 s-1. Interfacial engineering in this work yielded TFTs possessing printed Ag contacts that display electrical performance comparable with devices incorporating vacuum-deposited Al contacts. The impact of this result is the possibility for high performance fully printed TFTs. Development of this fabrication route might facilitate low temperature solution based roll-to-roll production of electrical components containing fully inkjet printed TFT devices

    3D printed neuromorphic sensing systems

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    Thanks to the high energy efficiency, neuromorphic devices are spotlighted recently by mimicking the calculation principle of the human brain through the parallel computation and the memory function. Various bio-inspired \u27in-memory computing\u27 (IMC) devices were developed during the past decades, such as synaptic transistors for artificial synapses. By integrating with specific sensors, neuromorphic sensing systems are achievable with the bio-inspired signal perception function. A signal perception process is possible by a combination of stimuli sensing, signal conversion/transmission, and signal processing. However, most neuromorphic sensing systems were demonstrated without signal conversion/transmission functions. Therefore, those cannot fully mimic the function provides by the sensory neuron in the biological system. This thesis aims to design a neuromorphic sensing system with a complete function as biological sensory neurons. To reach such a target, 3D printed sensors, electrical oscillators, and synaptic transistors were developed as functions of artificial receptors, artificial neurons, and artificial synapses, respectively. Moreover, since the 3D printing technology has demonstrated a facile process due to fast prototyping, the proposed 3D neuromorphic sensing system was designed as a 3D integrated structure and fabricated by 3D printing technologies. A novel multi-axis robot 3D printing system was also utilized to increase the fabrication efficiency with the capability of printing on vertical and tilted surfaces seamlessly. Furthermore, the developed 3D neuromorphic system was easily adapted to the application of tactile sensing. A portable neuromorphic system was integrated with a tactile sensing system for the intelligent tactile sensing application of the humanoid robot. Finally, the bio-inspired reflex arc for the unconscious response was also demonstrated by training the neuromorphic tactile sensing system

    Edge effects in silicon IGFETs.

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    Development of a stretchable platform for the fabrication of biocompatible microsystems

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