Energy-Aware Data Movement In Non-Volatile Memory Hierarchies

While technology scaling enables increased density for memory cells, the intrinsic high leakage power of conventional CMOS technology and the demand for reduced energy consumption inspires the use of emerging technology alternatives such as eDRAM and Non-Volatile Memory (NVM) including STT-MRAM, PCM, and RRAM. The utilization of emerging technology in Last Level Cache (LLC) designs which occupies a signifcant fraction of total die area in Chip Multi Processors (CMPs) introduces new dimensions of vulnerability, energy consumption, and performance delivery. To be specific, a part of this research focuses on eDRAM Bit Upset Vulnerability Factor (BUVF) to assess vulnerable portion of the eDRAM refresh cycle where the critical charge varies depending on the write voltage, storage and bit-line capacitance. This dissertation broaden the study on vulnerability assessment of LLC through investigating the impact of Process Variations (PV) on narrow resistive sensing margins in high-density NVM arrays, including on-chip cache and primary memory. Large-latency and power-hungry Sense Amplifers (SAs) have been adapted to combat PV in the past. Herein, a novel approach is proposed to leverage the PV in NVM arrays using Self-Organized Sub-bank (SOS) design. SOS engages the preferred SA alternative based on the intrinsic as-built behavior of the resistive sensing timing margin to reduce the latency and power consumption while maintaining acceptable access time. On the other hand, this dissertation investigates a novel technique to prioritize the service to 1) Extensive Read Reused Accessed blocks of the LLC that are silently dropped from higher levels of cache, and 2) the portion of the working set that may exhibit distant re-reference interval in L2. In particular, we develop a lightweight Multi-level Access History Profiler to effciently identify ERRA blocks through aggregating the LLC block addresses tagged with identical Most Signifcant Bits into a single entry. Experimental results indicate that the proposed technique can reduce the L2 read miss ratio by 51.7% on average across PARSEC and SPEC2006 workloads. In addition, this dissertation will broaden and apply advancements in theories of subspace recovery to pioneer computationally-aware in-situ operand reconstruction via the novel Logic In Interconnect (LI2) scheme. LI2 will be developed, validated, and re?ned both theoretically and experimentally to realize a radically different approach to post-Moore\u27s Law computing by leveraging low-rank matrices features offering data reconstruction instead of fetching data from main memory to reduce energy/latency cost per data movement. We propose LI2 enhancement to attain high performance delivery in the post-Moore\u27s Law era through equipping the contemporary micro-architecture design with a customized memory controller which orchestrates the memory request for fetching low-rank matrices to customized Fine Grain Reconfigurable Accelerator (FGRA) for reconstruction while the other memory requests are serviced as before. The goal of LI2 is to conquer the high latency/energy required to traverse main memory arrays in the case of LLC miss, by using in-situ construction of the requested data dealing with low-rank matrices. Thus, LI2 exchanges a high volume of data transfers with a novel lightweight reconstruction method under specific conditions using a cross-layer hardware/algorithm approach

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Enabling Reliable, Efficient, and Secure Computing for Energy Harvesting Powered IoT Devices

Energy harvesting is one of the most promising techniques to power devices for future generation IoT. While energy harvesting does not have longevity, safety, and recharging concerns like traditional batteries, its instability brings a new challenge to the embedded systems: the energy harvested from environment is usually weak and intermittent. With traditional CMOS based technology, whenever the power is off, the computation has to start from the very beginning. Compared with existing CMOS based memory devices, emerging non-volatile memory devices such as PCM and STT-RAM, have the benefits of sustaining the data even when there is no power. By checkpointing the processor's volatile state to non-volatile memory, a program can resume its execution immediately after power comes back on again instead of restarting from the very beginning with checkpointing techniques. However, checkpointing is not sufficient for energy harvesting systems. First, the program execution resumed from the last checkpoint might not execute correctly and causes inconsistency problem to the system. This problem is due to the inconsistency between volatile system state and non-volatile system state during checkpointing. Second, the process of checkpointing consumes a considerable amount of energy and time due to the slow and energy-consuming write operation of non-volatile memory. Finally, connecting to the internet poses many security issues to energy harvesting IoT devices. Traditional data encryption methods are both energy and time consuming which do not fit the resource constrained IoT devices. Therefore, a light-weight encryption method is in urgent need for securing IoT devices. Targeting those three challenges, this dissertation proposes three techniques to enable reliable, efficient, and secure computing in energy harvesting IoT devices. First, a consistency-aware checkpointing technique is proposed to avoid inconsistency errors generated from the inconsistency between volatile state and non-volatile state. Second, checkpoint aware hybrid cache architecture is proposed to guarantee reliable checkpointing while maintaining a low checkpointing overhead from cache. Finally, to ensure the security of energy harvesting IoT devices, an energy-efficient in-memory encryption implementation for protecting the IoT device is proposed which can quickly encrypts the data in non-volatile memory and protect the embedded system physical and on-line attacks

Software Techniques for Energy Efficient Memories

Ph.DDOCTOR OF PHILOSOPH

Understanding and Improving the Latency of DRAM-Based Memory Systems

Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic random-access memory), which has been used as the physical substrate for main memory. In stark contrast with capacity and bandwidth, DRAM latency has remained almost constant, reducing by only 1.3x in the same time frame. Therefore, long DRAM latency continues to be a critical performance bottleneck in modern systems. Increasing core counts, and the emergence of increasingly more data-intensive and latency-critical applications further stress the importance of providing low-latency memory access. In this dissertation, we identify three main problems that contribute significantly to long latency of DRAM accesses. To address these problems, we present a series of new techniques. Our new techniques significantly improve both system performance and energy efficiency. We also examine the critical relationship between supply voltage and latency in modern DRAM chips and develop new mechanisms that exploit this voltage-latency trade-off to improve energy efficiency. The key conclusion of this dissertation is that augmenting DRAM architecture with simple and low-cost features, and developing a better understanding of manufactured DRAM chips together lead to significant memory latency reduction as well as energy efficiency improvement. We hope and believe that the proposed architectural techniques and the detailed experimental data and observations on real commodity DRAM chips presented in this dissertation will enable development of other new mechanisms to improve the performance, energy efficiency, or reliability of future memory systems.Comment: PhD Dissertatio

A Statistical View of Architecture Design

Computer architectures are becoming more and more complicated to meet the continuouslyincreasing demand on performance, security and sustainability from applications. Many factorsexist in the design and engineering space of various components and policies in the architectures,and it is not intuitive how these factors interact with each other and how they make impactson the architecture behaviors. Seeking for the best architectures for specific applicationsand requirements automatically is even more challenging. Meanwhile, the architecture designneed to deal with more and more non-determinism from lower level technologies. Emergingtechnologies exhibit statistical properties inherently, such as the wearout phenomenon inNEMs, PCM, ReRAM, etc. Due to the manufacturing and processing variations, there alsoexists variability among different devices or within the same device (e.g. different cells onthe same memory chip). Hence, to better understand and control the architecture behaviors,we introduce the statistical perspective of architecture design: by specifying the architecturaldesign goals and the desired statistical properties, we guide the architecture design with thesestatistical properties and exploit a series of techniques to achieve these properties.In the first part of the thesis, we introduce Herniated Hash Tables. Our architectural designgoal is that the hash table implementation is highly scalable in both storage efficiency andperformance, while the desired statistical property is to achieve as good storage efficiencyand performance as with uniform distributions given non-uniform distributions across hashbuckets. Herniated Hash Tables exploit multi-level phase change memory (PCM) to in-placeexpand storage for each hash bucket to accommodate asymmetrically chained entries. Theorganization, coupled with an addressing and prefetching scheme, also improves performancesignificantly by creating more memory parallelism.In the second part of the thesis, we introduce Lemonade from Lemons, harnessing devicewearout to create limited-use security architectures. The architectural design goal is tocreate hardware security architectures that resist attacks by statistically enforcing an upperbound on hardware uses, and consequently attacks. The desired statistical property is that thesystem-level minimum and maximum uses can be guaranteed with high probabilities despite ofdevice-level variability. We introduce techniques for architecturally controlling these boundsand explore the cost in area, energy and latency of using these techniques to achieve systemlevelusage targets given device-level wearout distributions.In the third part of the thesis, we demonstrate Memory Cocktail Therapy: A General,Learning-Based Framework to Optimize Dynamic Tradeoffs in NVMs. Limited write enduranceand long latencies remain the primary challenges of building practical memory systems fromNVMs. Researchers have proposed a variety of architectural techniques to achieve differenttradeoffs between lifetime, performance and energy efficiency; however, no individual techniquecan satisfy requirements for all applications and different objectives. Our architecturaldesign goal is that NVM systems can achieve optimal tradeoffs for specific applications andobjectives, and the statistical goal is that the selected NVM configuration is nearly optimal.Memory Cocktail Therapy uses machine learning techniques to model the architecture behaviorsin terms of all the configurable parameters based on a small number of sample configurations.Then, it selects the optimal configuration according to user-defined objectives whichleads to the desired tradeoff between performance, lifetime and energy efficiency

Strong, thorough, and efficient memory protection against existing and emerging DRAM errors

Memory protection is necessary to ensure the correctness of data in the presence of unavoidable faults. As such, large-scale systems typically employ Error Correcting Codes (ECC) to trade off redundant storage and bandwidth for increased reliability. Single Device Data Correction (SDDC) ECC mechanisms are required to meet the reliability demands of servers and large-scale systems by tolerating even severe faults that disable an entire memory chip. In the future, however, stronger memory protection will be required due to increasing levels of system integration, shrinking process technology, and growing transfer rates. The energy-efficiency of memory protection is also important as DRAM already consumes a significant fraction of system energy budget. This dissertation develops a novel set of ECC schemes to provide strong, safe, flexible, and thorough protection against existing and emerging types of DRAM errors. This research also reduces energy consumption of such protection while only marginally impacting performance. First, this dissertation develops Bamboo ECC, a technique with strongerthan-SDDC correction and very safe detection capabilities (≥ 99.999994% of data errors with any severity are detected). Bamboo ECC changes ECC layout based on frequent DRAM error patterns, and can correct concurrent errors from multiple devices and all but eliminates the risk of silent data corruption. Also, Bamboo ECC provides flexible configurations to enable more adaptive graceful downgrade schemes in which the system continues to operate correctly after even severe chip faults, albeit at a reduced capacity to protect against future faults. These strength, safety, and flexibility advantages translate to a significantly more reliable memory sub-system for future exascale computing. Then, this dissertation focuses on emerging error types from scaling process technology and increasing data bandwidth. As DRAM process technology scales down to below 10nm, DRAM cells are becoming more vulnerable to errors from an imperfect manufacturing process. At the same time, DRAM signal transfers are getting more susceptible to timing and electrical noises as DRAM interfaces keep increasing signal transfer rates and decreasing I/O voltage levels. With individual DRAM chips getting more vulnerable to errors, industry and academia have proposed mechanisms to tolerate these emerging types of errors; yet they are inefficient because they rely on multiple levels of redundancy in the case of cell errors and ad-hoc schemes with suboptimal protection coverage for transmission errors. Active Guardband ECC and All-Inclusive ECC make systematic use of ECC and existing mechanisms to provide thorough end-to-end protection without requiring redundancy beyond what is common today. Finally, this dissertation targets the energy efficiency of memory protection. Frugal ECC combines ECC with fine-grained compression to provide versatile and energy-efficient protection. Frugal ECC compresses main memory at cache-block granularity, using any left over space to store ECC information. Frugal ECC allows more energy-efficient memory configurations while maintaining SDDC protection. Its tailored compression scheme minimizes insufficiently compressed blocks and results in acceptable performance overhead. The strong, thorough, and efficient protection described by this dissertation may allow for more aggressive design of future computing systems with larger integration, finer process technology, higher transfer rates, and better energy efficiencyElectrical and Computer Engineerin