MIDAS: Automated Approach to Design Microwave Integrated Inductors and Transformers on Silicon

The design of modern radiofrequency integrated circuits on silicon operating at microwave and millimeter-waves requires the integration of several spiral inductors and transformers that are not commonly available in the process design-kits of the technologies. In this work we present an auxiliary CAD tool for Microwave Inductor (and transformer) Design Automation on Silicon (MIDAS) that exploits commercial simulators and allows the implementation of an automatic design flow, including three-dimensional layout editing and electromagnetic simulations. In detail, MIDAS allows the designer to derive a preliminary sizing of the inductor (transformer) on the bases of the design entries (specifications). It draws the inductor (transformer) layers for the specific process design kit, including vias and underpasses, with or without patterned ground shield, and launches the electromagnetic simulations, achieving effective design automation with respect to the traditional design flow for RFICs. With the present software suite the complete design time is reduced significantly (typically 1 hour on a PC based on Intel® Pentium® Dual 1.80GHz CPU with 2-GB RAM). Afterwards both the device equivalent circuit and the layout are ready to be imported in the Cadence environment

A design tool for high-resolution high-frequency cascade continuous- time Σ∆ modulators

Event: Microtechnologies for the New Millennium, 2007, Maspalomas, Gran Canaria, SpainThis paper introduces a CAD methodology to assist the de signer in the implementation of continuous-time (CT) cas- cade Σ∆ modulators. The salient features of this methodology ar e: (a) flexible behavioral modeling for optimum accuracy- efficiency trade-offs at different stages of the top-down synthesis process; (b) direct synthesis in the continuous-time domain for minimum circuit complexity and sensitivity; a nd (c) mixed knowledge-based and optimization-based architec- tural exploration and specification transmission for enhanced circuit performance. The applicability of this methodology will be illustrated via the design of a 12 bit 20 MHz CT Σ∆ modulator in a 1.2V 130nm CMOS technology.Ministerio de Ciencia y Educación TEC2004-01752/MICMinisterio de Industria, Turismo y Comercio FIT-330100-2006-134 SPIRIT Projec

LC-VCO design optimization methodology based on the gm/ID ratio for nanometer CMOS technologies

In this paper, an LC voltage-controlled oscillator (LC-VCO) design optimization methodology based on the gm/ID technique and on the exploration of all inversion regions of the MOS transistor (MOST) is presented. An in-depth study of the compromises between phase noise and current consumption permits optimization of the design for given specifications. Semiempirical models of MOSTs and inductors, obtained by simulation, jointly with analytical phase noise models, allow to get a design space map where the design tradeoffs are easily identified. Four LC-VCO designs in different inversion regions in a 90-nm CMOS process are obtained with the proposed methodology and verified with electrical simulations. Finally, the implementation and measurements are presented for a 2.4-GHz VCO operating in moderate inversion. The designed VCO draws 440 μA from a 1.2-V power supply and presents a phase noise of -106.2 dBc/Hz at 400 kHz from the carrier

Global design of analog cells using statistical optimization techniques

We present a methodology for automated sizing of analog cells using statistical optimization in a simulation based approach. This methodology enables us to design complex analog cells from scratch within reasonable CPU time. Three different specification types are covered: strong constraints on the electrical performance of the cells, weak constraints on this performance, and design objectives. A mathematical cost function is proposed and a bunch of heuristics is given to increase accuracy and reduce CPU time to minimize the cost function. A technique is also presented to yield designs with reduced variability in the performance parameters, under random variations of the transistor technological parameters. Several CMOS analog cells with complexity levels up to 48 transistors are designed for illustration. Measurements from fabricated prototypes demonstrate the suitability of the proposed methodology

ToPoliNano: Nanoarchitectures Design Made Real

Many facts about emerging nanotechnologies are yet to be assessed. There are still major concerns, for instance, about maximum achievable device density, or about which architecture is best fit for a specific application. Growing complexity requires taking into account many aspects of technology, application and architecture at the same time. Researchers face problems that are not new per se, but are now subject to very different constraints, that need to be captured by design tools. Among the emerging nanotechnologies, two-dimensional nanowire based arrays represent promising nanostructures, especially for massively parallel computing architectures. Few attempts have been done, aimed at giving the possibility to explore architectural solutions, deriving information from extensive and reliable nanoarray characterization. Moreover, in the nanotechnology arena there is still not a clear winner, so it is important to be able to target different technologies, not to miss the next big thing. We present a tool, ToPoliNano, that enables such a multi-technological characterization in terms of logic behavior, power and timing performance, area and layout constraints, on the basis of specific technological and topological descriptions. This tool can aid the design process, beside providing a comprehensive simulation framework for DC and timing simulations, and detailed power analysis. Design and simulation results will be shown for nanoarray-based circuits. ToPoliNano is the first real design tool that tackles the top down design of a circuit based on emerging technologie

Thick-Film and LTCC Passive Components for High-Temperature Electronics

At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors) made in thick-film or Low-Temperature Co-fired Ceramics (LTCC) technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors) suitable for the temperature range between 150°C and 400°C

Fast Power and Energy Efficiency Analysis of FPGA-based Wireless Base-band Processing

Nowadays, demands for high performance keep on increasing in the wireless communication domain. This leads to a consistent rise of the complexity and designing such systems has become a challenging task. In this context, energy efficiency is considered as a key topic, especially for embedded systems in which design space is often very constrained. In this paper, a fast and accurate power estimation approach for FPGA-based hardware systems is applied to a typical wireless communication system. It aims at providing power estimates of complete systems prior to their implementations. This is made possible by using a dedicated library of high-level models that are representative of hardware IPs. Based on high-level simulations, design space exploration is made a lot faster and easier. The definition of a scenario and the monitoring of IP's time-activities facilitate the comparison of several domain-specific systems. The proposed approach and its benefits are demonstrated through a typical use case in the wireless communication domain.Comment: Presented at HIP3ES, 201

Accurate Settling-Time Modeling and Design Procedures for Two-Stage Miller-Compensated Amplifiers for Switched-Capacitor Circuits

We present modeling techniques for accurate estimation of settling errors in switched-capacitor (SC) circuits built with Miller-compensated operational transconductance amplifiers (OTAs). One distinctive feature of the proposal is the computation of the impact of signal levels (on both the model parameters and the model structure) as they change during transient evolution. This is achieved by using an event-driven behavioral approach that combines small- and large-signal behavioral descriptions and keeps track of the amplifier state after each clock phase. Also, SC circuits are modeled under closed-loop conditions to guarantee that the results remain close to those obtained by electrical simulation of the actual circuits. Based on these models, which can be regarded as intermediate between the more established small-signal approach and full-fledged simulations, design procedures for dimensioning SC building blocks are presented whose targets are system-level specifications (such as ENOB and SNDR) instead of OTA specifications. The proposed techniques allow to complete top-down model-based designs with 0.3-b accuracy.Ministerio de Educación y Ciencia TEC2006-03022Junta de Andalucía TIC-0281

On signalling over through-silicon via (TSV) interconnects in 3-D integrated circuits.

This paper discusses signal integrity (SI) issues and signalling techniques for Through Silicon Via (TSV) interconnects in 3-D Integrated Circuits (ICs). Field-solver extracted parasitics of TSVs have been employed in Spice simulations to investigate the effect of each parasitic component on performance metrics such as delay and crosstalk and identify a reduced-order electrical model that captures all relevant effects. We show that in dense TSV structures voltage-mode (VM) signalling does not lend itself to achieving high data-rates, and that current-mode (CM) signalling is more effective for high throughput signalling as well as jitter reduction. Data rates, energy consumption and coupled noise for the different signalling modes are extracted