Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs

This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is mainly unpredictable and dictated by device structure and design parameters non-uniformities. TCAD simulations were performed to examine the impact of some parameters mismatch on hotspot formation and failure occurrenc

Modeling integrated circuits for computing

Integrated circuit models for computer analysis and desig

Influence of material quality and process-induced defects on semiconductor device performance and yield

An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated. Various defect characterization techniques are described and applied. A correlation of device failure, defect type, and cause of defect is presented in tabular form with accompanying illustrations

Quantum well intermixing for photonic IC applications

Photonic IC is an attractive information processing means to fully utilize the enormous bandwidth carried by the optical signals. The full integration of photonics devices, such as tunable lasers, modulators and photodetectors have to be developed and which can be obtain by using the Quantum Well Intermixing technology. This paper will explore on the wavelength tunability using different Quantum Well Intermixing techniques, such as impurity induced diffusion and impurity-free vacancy diffusion. Emphasis will be put on the development of very recent innovations and applications.published_or_final_versio

Satellite on-board processing for earth resources data

Results of a survey of earth resources user applications and their data requirements, earth resources multispectral scanner sensor technology, and preprocessing algorithms for correcting the sensor outputs and for data bulk reduction are presented along with a candidate data format. Computational requirements required to implement the data analysis algorithms are included along with a review of computer architectures and organizations. Computer architectures capable of handling the algorithm computational requirements are suggested and the environmental effects of an on-board processor discussed. By relating performance parameters to the system requirements of each of the user requirements the feasibility of on-board processing is determined for each user. A tradeoff analysis is performed to determine the sensitivity of results to each of the system parameters. Significant results and conclusions are discussed, and recommendations are presented

Transient out-of-SOA robustness of SiC power MOSFETs

Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper considers the specific case of 1200 V SiC power MOSFETs and analyses their performance under three main transient regimes at the edge of and out of their Safe Operating Area: unclamped inductive switching led avalanche breakdown; short-circuit; operation as current limiting and regulating devices. The results presented highlight both inherent major strengths of SiC over Si and areas for improvement by tailored device design. The paper aims to contribute useful indications for technology development in future device generations to better match widespread and varied application requirements

Quantum well intermixing: materials modeling and device physics

Quantum well composition intermixing is a thermal induced interdiffusion of the constituent atoms through the heterointerface. The intermixed structures created by both impurity induced and impurity free or vacancy promoted processes have recently attracted high attention. The interdiffusion mechanism is no longer confined to a single phase diffusion for two constituent atoms, but it can now consist of two or multiple phases and/or for multiple species, such as three cations interdiffusion and two pairs of cation-anion interdiffusion. A review on the impact of intermixing on device physics is presented with many interesting features. For instance, both compressive or tensile strain materials and both blue or red shifts in the bandgap can be achieved depending on the types of intermixing. The recent advancement in intermixing modified optical properties, such as absorption, refractive index as well as electro-optics effects are discussed. In addition, this paper will place a strong emphasis on the device application of the intermixing technology. The advantage of being able to tune the material provides a way to improve the performance of photodetectors and modulators. Attractive distributed-feedback and vertical cavity laser dynamics have been shown due to some unique device physics of the quantum well intermixing. Several state-of-the-art results will be summarized with an emphasis on its future development and directions.published_or_final_versio

X-ray satellite

An overview of the second quarter 1985 development of the X-ray satellite project is presented. It is shown that the project is proceeding according to plan and that the projected launch date of September 9, 1987 is on schedule. An overview of the work completed and underway on the systems, subsystems, payload, assembly, ground equipment and interfaces is presented. Problem areas shown include cost increases in the area of focal instrumentation, the star sensor light scattering requirements, and postponements in the data transmission subsystems

Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs

This paper investigates the effect of negative gate bias voltage (VGS) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device’s ability to withstand energy dissipation during avalanche regime is a connoting figure of merit for all applications requiring load dumping and/or benefiting from snubber-less converter design. The superior material properties of SiC material means that SiC MOSFETs even at 1200V exhibit significant intrinsic avalanche robustness