SiC Band Gap Voltage Reference for Space Applications

Electronics for space applications can experience wide temperature swings depending on orientation towards stars and duty cycle of propulsion systems. Energy on satellites primarily comes from radiological thermal generators and / or solar panels. This requires space electronic applications to be energy efficient and have high temperature tolerance. As a result, space electronic systems use high efficiency SMPS [switching mode power supplies]. Currently, there exists SiC [silicon carbide] based electronics that is state of the art for high temperature applications. Commercial manufacturers at this time produce SiC Power MOSFETs [Metal Oxide Semiconductor Field Effect Transistors], which are the switching element of the SMPS. Although many commercial silicon SMPS controller IC’s [Integrated Circuits] are available on the market at this time, there are no SiC SMPS controller IC’s. The scope of this research project was sponsored by NASA which required the design, fabrication, and testing of a single module SiC SMPS controller. A subcomponent of the SMPS design was a BGR [bandgap voltage reference] for the controller. This thesis will cover the theoretical basis of the BGR, the development methods and challenges in the design of a SiC BGR; utilizing a commercial SiC process as a major constraint in the designs. These constraints were partially tackled by using topologies and techniques from the early days of n channel MOSFET based electronics established in the1970’s. The basis of design was models provided by the owner of the process. The BGR was designed with Kuijk BGR topology. These devices are currently being produced in the microelectronics foundry facility since the simulation analysis results have provided promising theoretical data depicting a simulated temperature stability of 16.5 ppm /℃ from 25-160 ℃

A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

An accurate, trimless, high PSRR, low-voltage, CMOS bandgap reference IC

Bandgap reference circuits are used in a host of analog, digital, and mixed-signal systems to establish an accurate voltage standard for the entire IC. The accuracy of the bandgap reference voltage under steady-state (dc) and transient (ac) conditions is critical to obtain high system performance. In this work, the impact of process, power-supply, load, and temperature variations and package stresses on the dc and ac accuracy of bandgap reference circuits has been analyzed. Based on this analysis, the a bandgap reference that 1. has high dc accuracy despite process and temperature variations and package stresses, without resorting to expensive trimming or noisy switching schemes, 2. has high dc and ac accuracy despite power-supply variations, without using large off-chip capacitors that increase bill-of-material costs, 3. has high dc and ac accuracy despite load variations, without resorting to error-inducing buffers, 4. is capable of producing a sub-bandgap reference voltage with a low power-supply, to enable it to operate in modern, battery-operated portable applications, 5. utilizes a standard CMOS process, to lower manufacturing costs, and 6. is integrated, to consume less board space has been proposed. The functionality of critical components of the system has been verified through prototypes after which the performance of the complete system has been evaluated by integrating all the individual components on an IC. The proposed CMOS bandgap reference can withstand 5mA of load variations while generating a reference voltage of 890mV that is accurate with respect to temperature to the first order. It exhibits a trimless, dc 3-sigma accuracy performance of 0.84% over a temperature range of -40°C to 125°C and has a worst case ac power-supply ripple rejection (PSRR) performance of 30dB up to 50MHz using 60pF of on-chip capacitance. All the proposed techniques lead to the development of a CMOS bandgap reference that meets the low-cost, high-accuracy demands of state-of-the-art System-on-Chip environments.Ph.D.Committee Chair: Rincon-Mora, Gabriel; Committee Member: Ayazi, Farrokh; Committee Member: Bhatti, Pamela; Committee Member: Leach, W. Marshall; Committee Member: Morley, Thoma

Analog integrated circuit design in ultra-thin oxide CMOS technologies with significant direct tunneling-induced gate current

The ability to do mixed-signal IC design in a CMOS technology has been a driving force for manufacturing personal mobile electronic products such as cellular phones, digital audio players, and personal digital assistants. As CMOS has moved to ultra-thin oxide technologies, where oxide thicknesses are less than 3 nm, this type of design has been threatened by the direct tunneling of carriers though the gate oxide. This type of tunneling, which increases exponentially with decreasing oxide thickness, is a source of MOSFET gate current. Its existence invalidates the simplifying design assumption of infinite gate resistance. Its problems are typically avoided by switching to a high-&kappa/metal gate technology or by including a second thick(er) oxide transistor. Both of these solutions come with undesirable increases in cost due to extra mask and processing steps. Furthermore, digital circuit solutions to the problems created by direct tunneling are available, while analog circuit solutions are not. Therefore, it is desirable that analog circuit solutions exist that allow the design of mixed-signal circuits with ultra-thin oxide MOSFETs. This work presents a methodology that develops these solutions as a less costly alternative to high-&kappa/metal gate technologies or thick(er) oxide transistors. The solutions focus on transistor sizing, DC biasing, and the design of current mirrors and differential amplifiers. They attempt to minimize, balance, and cancel the negative effects of direct tunneling on analog design in traditional (non-high-&kappa/metal gate) ultra-thin oxide CMOS technologies. They require only ultra-thin oxide devices and are investigated in a 65 nm CMOS technology with a nominal VDD of 1 V and a physical oxide thickness of 1.25 nm. A sub-1 V bandgap voltage reference that requires only ultra-thin oxide MOSFETs is presented (TC = 251.0 ppm/°C). It utilizes the developed methodology and illustrates that it is capable of suppressing the negative effects of direct tunneling. Its performance is compared to a thick-oxide voltage reference as a means of demonstrating that ultra-thin oxide MOSFETs can be used to build the analog component of a mixed-signal system

Integrated Circuits for Programming Flash Memories in Portable Applications

Smart devices such as smart grids, smart home devices, etc. are infrastructure systems that connect the world around us more than before. These devices can communicate with each other and help us manage our environment. This concept is called the Internet of Things (IoT). Not many smart nodes exist that are both low-power and programmable. Floating-gate (FG) transistors could be used to create adaptive sensor nodes by providing programmable bias currents. FG transistors are mostly used in digital applications like Flash memories. However, FG transistors can be used in analog applications, too. Unfortunately, due to the expensive infrastructure required for programming these transistors, they have not been economical to be used in portable applications. In this work, we present low-power approaches to programming FG transistors which make them a good candidate to be employed in future wireless sensor nodes and portable systems. First, we focus on the design of low-power circuits which can be used in programming the FG transistors such as high-voltage charge pumps, low-drop-out regulators, and voltage reference cells. Then, to achieve the goal of reducing the power consumption in programmable sensor nodes and reducing the programming infrastructure, we present a method to program FG transistors using negative voltages. We also present charge-pump structures to generate the necessary negative voltages for programming in this new configuration

Design of adaptive analog filters for magnetic front-end read channels

Esta tese estuda o projecto e o comportamento de filtros em tempo contínuo de muito-alta-frequência. A motivação deste trabalho foi a investigação de soluções de filtragem para canais de leitura em sistemas de gravação e reprodução de dados em suporte magnético, com custos e consumo (tamanho total inferior a 1 mm2 e consumo inferior a 1mW/polo), inferiores aos circuitos existentes. Nesse sentido, tal como foi feito neste trabalho, o rápido desenvolvimento das tecnologias de microelectrónica suscitou esforços muito significativos a nível mundial com o objectivo de se investigarem novas técnicas de realização de filtros em circuito integrado monolítico, especialmente em tecnologia CMOS (Complementary Metal Oxide Semiconductor). Apresenta-se um estudo comparativo a diversos níveis hierárquicos do projecto, que conduziu à realização e caracterização de soluções com as características desejadas. Num primeiro nível, este estudo aborda a questão conceptual da gravação e transmissão de sinal bem como a escolha de bons modelos matemáticos para o tratamento da informação e a minimização de erro inerente às aproximações na conformidade aos princípios físicos dos dispositivos caracterizados. O trabalho principal da tese é focado nos níveis hierárquicos da arquitectura do canal de leitura e da realização em circuito integrado do seu bloco principal – o bloco de filtragem. Ao nível da arquitectura do canal de leitura, apresenta-se um estudo alargado sobre as metodologias existentes de adaptação de sinal e recuperação de dados em suporte magnético. Este desígnio aparece no âmbito da proposta de uma solução de baixo custo, baixo consumo, baixa tensão de alimentação e baixa complexidade, alicerçada em tecnologia digital CMOS, para a realização de um sistema DFE (Decision Feedback Equalization) com base na igualização de sinal utilizando filtros integrados analógicos em tempo contínuo. Ao nível do projecto de realização do bloco de filtragem e das técnicas de implementação de filtros e dos seus blocos constituintes em circuito integrado, concluiu-se que a técnica baseada em circuitos de transcondutância e condensadores, também conhecida como filtros gm-C (ou transcondutância-C), é a mais adequada para a realização de filtros adaptativos em muito-alta-frequência. Definiram-se neste nível hierárquico mais baixo, dois subníveis de aprofundamento do estudo no âmbito desta tese, nomeadamente: a pesquisa e análise de estruturas ideais no projecto de filtros recorrendo a representações no espaço de estados; e, o estudo de técnicas de realização em tecnologia digital CMOS de circuitos de transcondutância para a implementação de filtros integrados analógicos em tempo contínuo. Na sequência deste estudo, apresentam-se e comparam-se duas estruturas de filtros no espaço de estados, correspondentes a duas soluções alternativas para a realização de um igualador adaptativo realizado por um filtro contínuo passa-tudo de terceira ordem, para utilização num canal de leitura de dados em suporte magnético. Como parte constituinte destes filtros, apresenta-se uma técnica de realização de circuitos de transcondutância, e de realização de condensadores lineares usando matrizes de transístores MOSFET para processamento de sinal em muito-alta-frequência realizada em circuito integrado usando tecnologia digital CMOS submicrométrica. Apresentam-se métodos de adaptação automática capazes de compensar os erros face aos valores nominais dos componentes, devidos às tolerâncias inerentes ao processo de fabrico, para os quais apresentamos os resultados de simulação e de medição experimental obtidos. Na sequência deste estudo, resultou igualmente a apresentação de um circuito passível de constituir uma solução para o controlo de posicionamento da cabeça de leitura em sistemas de gravação/reprodução de dados em suporte magnético. O bloco proposto é um filtro adaptativo de primeira ordem, com base nos mesmos circuitos de transcondutância e técnicas de igualação propostos e utilizados na implementação do filtro adaptativo de igualação do canal de leitura. Este bloco de filtragem foi projectado e incluído num circuito integrado (Jaguar) de controlo de posicionamento da cabeça de leitura realizado para a empresa ATMEL em Colorado Springs, e incluído num produto comercial em parceria com uma empresa escocesa utilizado em discos rígidos amovíveis.This thesis studies the design and behavior of continuous-time very-high-frequency filters. The motivation of this work was the search for filtering solutions for the readchannel in recording and reproduction of data on magnetic media systems, with costs and consumption (total size less than 1 mm2 and consumption under 1mW/pole), lower than the available circuits. Accordingly, as was done in this work, the rapid development of microelectronics technology raised very significant efforts worldwide in order to investigate new techniques for implementing such filters in monolithic integrated circuit, especially in CMOS technology (Complementary Metal Oxide Semiconductor). We present a comparative study on different hierarchical levels of the project, which led to the realization and characterization of solutions with the desired characteristics. In the first level, this study addresses the conceptual question of recording and transmission of signal and the choice of good mathematical models for the processing of information and minimization of error inherent in the approaches and in accordance with the principles of the characterized physical devices. The main work of this thesis is focused on the hierarchical levels of the architecture of the read channel and the integrated circuit implementation of its main block - the filtering block. At the architecture level of the read channel this work presents a comprehensive study on existing methodologies of adaptation and signal recovery of data on magnetic media. This project appears in the sequence of the proposed solution for a lowcost, low consumption, low voltage, low complexity, using CMOS digital technology for the performance of a DFE (Decision Feedback Equalization) based on the equalization of the signal using integrated analog filters in continuous time. At the project level of implementation of the filtering block and techniques for implementing filters and its building components, it was concluded that the technique based on transconductance circuits and capacitors, also known as gm-C filters is the most appropriate for the implementation of very-high-frequency adaptive filters. We defined in this lower level, two sub-levels of depth study for this thesis, namely: research and analysis of optimal structures for the design of state-space filters, and the study of techniques for the design of transconductance cells in digital CMOS circuits for the implementation of continuous time integrated analog filters. Following this study, we present and compare two filtering structures operating in the space of states, corresponding to two alternatives for achieving a realization of an adaptive equalizer by the use of a continuous-time third order allpass filter, as part of a read-channel for magnetic media devices. As a constituent part of these filters, we present a technique for the realization of transconductance circuits and for the implementation of linear capacitors using arrays of MOSFET transistors for signal processing in very-high-frequency integrated circuits using sub-micrometric CMOS technology. We present methods capable of automatic adjustment and compensation for deviation errors in respect to the nominal values of the components inherent to the tolerances of the fabrication process, for which we present the simulation and experimental measurement results obtained. Also as a result of this study, is the presentation of a circuit that provides a solution for the control of the head positioning on recording/playback systems of data on magnetic media. The proposed block is an adaptive first-order filter, based on the same transconductance circuits and equalization techniques proposed and used in the implementation of the adaptive filter for the equalization of the read channel. This filter was designed and included in an integrated circuit (Jaguar) used to control the positioning of the read-head done for ATMEL company in Colorado Springs, and part of a commercial product used in removable hard drives fabricated in partnership with a Scottish company

A Low-Power Capacitive Transimpedance D/A Converter

This thesis proposes a new low-power and low-area DAC for single-slope ADCs used in CMOS image sensors. With increase in resolution requirements for ADCs, conventional DAC architectures suffered the limitation of either large area or high power consumption with higher resolution scaling. Thus, the proposed capacitive transimpedance amplifier DAC (CTIA DAC) could solve this by offering the resolution requirement required without taking a hit on the area or power budget. The thesis has been structured in the following manner: The first chapter introduces image sensors in general and talks about progression through different image sensors and pixel architectures that have been used through the years. It also explains the operation of a CMOS image sensor from a paper published from Sony on high-speed image sensors. The second chapter presents the importance and role of DACs in CMOS image sensors and briefly explains a few commonly used DAC architectures in image sensors. It explains the advantages and disadvantages of present architectures and leads the discussion towards the development of the proposed DAC. The third chapter gives an overview of the CTIA DAC and explains the working of the different circuit blocks that are used to implement the proposed DAC. Chapter Four explains the design approach for the blocks explained in Chapter Three. It presents the critical design choices that were made for overall performance of the DAC. Results of individual blocks and the DAC as a whole are presented and compared against other recently published DAC papers. The final chapter summarizes some key results of the design and talks about the scope for future work and improvement

Low-power switched capacitor voltage reference

Low-power analog design represents a developing technological trend as it emerges from a rather limited range of applications to a much wider arena affecting mainstream market segments. It especially affects portable electronics with respect to battery life, performance, and physical size. Meanwhile, low-power analog design enables technologies such as sensor networks and RFID. Research opportunities abound to exploit the potential of low power analog design, apply low-power to established fields, and explore new applications. The goal of this effort is to design a low-power reference circuit that delivers an accurate reference with very minimal power consumption. The circuit and device level low-power design techniques are suitable for a wide range of applications. To meet this goal, switched capacitor bandgap architecture was chosen. It is the most suitable for developing a systematic, and groundup, low-power design approach. In addition, the low-power analog cell library developed would facilitate building a more complex low-power system. A low-power switched capacitor bandgap was designed, fabricated, and fully tested. The bandgap generates a stable 0.6-V reference voltage, in both the discrete-time and continuous-time domain. The system was thoroughly tested and individual building blocks were characterized. The reference voltage is temperature stable, with less than a 100 ppm/°C drift, over a --60 dB power supply rejection, and below a 1 [Mu]A total supply current (excluding optional track-and-hold). Besides using it as a voltage reference, potential applications are also described using derivatives of this switched capacitor bandgap, specifically supply supervisory and on-chip thermal regulation