Design guidelines towards compact litho-friendly regular cells

Preprin

Layout regularity metric as a fast indicator of process variations

Integrated circuits design faces increasing challenge as we scale down due to the increase of the effect of sensitivity to process variations. Systematic variations induced by different steps in the lithography process affect both parametric and functional yields of the designs. These variations are known, themselves, to be affected by layout topologies. Design for Manufacturability (DFM) aims at defining techniques that mitigate variations and improve yield. Layout regularity is one of the trending techniques suggested by DFM to mitigate process variations effect. There are several solutions to create regular designs, like restricted design rules and regular fabrics. These regular solutions raised the need for a regularity metric. Metrics in literature are insufficient for different reasons; either because they are qualitative or computationally intensive. Furthermore, there is no study relating either lithography or electrical variations to layout regularity. In this work, layout regularity is studied in details and a new geometrical-based layout regularity metric is derived. This metric is verified against lithographic simulations and shows good correlation. Calculation of the metric takes only few minutes on 1mm x 1mm design, which is considered fast compared to the time taken by simulations. This makes it a good candidate for pre-processing the layout data and selecting certain areas of interest for lithographic simulations for faster throughput. The layout regularity metric is also compared against a model that measures electrical variations due to systematic lithographic variations. The validity of using the regularity metric to flag circuits that have high variability using the developed electrical variations model is shown. The regularity metric results compared to the electrical variability model results show matching percentage that can reach 80%, which means that this metric can be used as a fast indicator of designs more susceptible to lithography and hence electrical variations

Lithography parametric yield estimation model to predict layout pattern distortions with a reduced set of lithography simulations

A lithography parametric yield estimation model is presented to evaluate the lithography distortion in a printed layout due to lithography hotspots. The aim of the proposed yield model is to provide a new metric that enables the possibility to objectively compare the lithography quality of different layout design implementations. Moreover, we propose a pattern construct classifier to reduce the set of lithography simulations necessary to estimate the litho degradation. The application of the yield model is demonstrated for different layout configurations showing that a certain degree of layout regularity improves the parametric yield and increases the number of good dies per wafer. (C) 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)Peer ReviewedPostprint (author’s final draft

Regular cell design approach considering lithography-induced process variations

The deployment delays for EUVL, forces IC design to continue using 193nm wavelength lithography with innovative and costly techniques in order to faithfully print sub-wavelength features and combat lithography induced process variations. The effect of the lithography gap in current and upcoming technologies is to cause severe distortions due to optical diffraction in the printed patterns and thus degrading manufacturing yield. Therefore, a paradigm shift in layout design is mandatory towards more regular litho-friendly cell designs in order to improve line pattern resolution. However, it is still unclear the amount of layout regularity that can be introduced and how to measure the benefits and weaknesses of regular layouts. This dissertation is focused on searching the degree of layout regularity necessary to combat lithography variability and outperform the layout quality of a design. The main contributions that have been addressed to accomplish this objective are: (1) the definition of several layout design guidelines to mitigate lithography variability; (2) the proposal of a parametric yield estimation model to evaluate the lithography impact on layout design; (3) the development of a global Layout Quality Metric (LQM) including a Regularity Metric (RM) to capture the degree of layout regularity of a layout implementation and; (4) the creation of different layout architectures exploiting the benefits of layout regularity to outperform line-pattern resolution, referred as Adaptive Lithography Aware Regular Cell Designs (ALARCs). The first part of this thesis provides several regular layout design guidelines derived from lithography simulations so that several important lithography related variation sources are minimized. Moreover, a design level methodology, referred as gate biasing, is proposed to overcome systematic layout dependent variations, across-field variations and the non-rectilinear gate effect (NRG) applied to regular fabrics by properly configuring the drawn transistor channel length. The second part of this dissertation proposes a lithography yield estimation model to predict the amount of lithography distortion expected in a printed layout due to lithography hotspots with a reduced set of lithography simulations. An efficient lithography hotspot framework to identify the different layout pattern configurations, simplify them to ease the pattern analysis and classify them according to the lithography degradation predicted using lithography simulations is presented. The yield model is calibrated with delay measurements of a reduced set of identical test circuits implemented in a CMOS 40nm technology and thus actual silicon data is utilized to obtain a more realistic yield estimation. The third part of this thesis presents a configurable Layout Quality Metric (LQM) that considering several layout aspects provides a global evaluation of a layout design with a single score. The LQM can be leveraged by assigning different weights to each evaluation metric or by modifying the parameters under analysis. The LQM is here configured following two different set of partial metrics. Note that the LQM provides a regularity metric (RM) in order to capture the degree of layout regularity applied in a layout design. Lastly, this thesis presents different ALARC designs for a 40nm technology using different degrees of layout regularity and different area overheads. The quality of the gridded regular templates is demonstrated by automatically creating a library containing 266 cells including combinational and sequential cells and synthesizing several ITC'99 benchmark circuits. Note that the regular cell libraries only presents a 9\% area penalty compared to the 2D standard cell designs used for comparison and thus providing area competitive designs. The layout evaluation of benchmark circuits considering the LQM shows that regular layouts can outperform other 2D standard cell designs depending on the layout implementation.Los continuos retrasos en la implementación de la EUVL, fuerzan que el diseño de IC se realice mediante litografía de longitud de onda de 193 nm con innovadoras y costosas técnicas para poder combatir variaciones de proceso de litografía. La gran diferencia entre la longitud de onda y el tamaño de los patrones causa severas distorsiones debido a la difracción óptica en los patrones impresos y por lo tanto degradando el yield. En consecuencia, es necesario realizar un cambio en el diseño de layouts hacia diseños más regulares para poder mejorar la resolución de los patrones. Sin embargo, todavía no está claro el grado de regularidad que se debe introducir y como medir los beneficios y los perjuicios de los diseños regulares. El objetivo de esta tesis es buscar el grado de regularidad necesario para combatir las variaciones de litografía y mejorar la calidad del layout de un diseño. Las principales contribuciones para conseguirlo son: (1) la definición de diversas reglas de diseño de layout para mitigar las variaciones de litografía; (2) la propuesta de un modelo para estimar el yield paramétrico y así evaluar el impacto de la litografía en el diseño de layout; (3) el diseño de una métrica para analizar la calidad de un layout (LQM) incluyendo una métrica para capturar el grado de regularidad de un diseño (RM) y; (4) la creación de diferentes tipos de layout explotando los beneficios de la regularidad, referidos como Adaptative Lithography Aware Regular Cell Designs (ALARCs). La primera parte de la tesis, propone las diversas reglas de diseño para layouts regulares derivadas de simulaciones de litografía de tal manera que las fuentes de variación de litografía son minimizadas. Además, se propone una metodología de diseño para layouts regulares, referida como "gate biasing" para contrarrestar las variaciones sistemáticas dependientes del layout, las variaciones en la ventana de proceso del sistema litográfico y el efecto de puerta no rectilínea para configurar la longitud del canal del transistor correctamente. La segunda parte de la tesis, detalla el modelo de estimación del yield de litografía para predecir mediante un número reducido de simulaciones de litografía la cantidad de distorsión que se espera en un layout impreso debida a "hotspots". Se propone una eficiente metodología que identifica los distintos patrones de un layout, los simplifica para facilitar el análisis de los patrones y los clasifica en relación a la degradación predecida mediante simulaciones de litografía. El modelo de yield se calibra utilizando medidas de tiempo de un número reducido de idénticos circuitos de test implementados en una tecnología CMOS de 40nm y de esta manera, se utilizan datos de silicio para obtener una estimación realista del yield. La tercera parte de este trabajo, presenta una métrica para medir la calidad del layout (LQM), que considera diversos aspectos para dar una evaluación global de un diseño mediante un único valor. La LQM puede ajustarse mediante la asignación de diferentes pesos para cada métrica de evaluación o modificando los parámetros analizados. La LQM se configura mediante dos conjuntos de medidas diferentes. Además, ésta incluye una métrica de regularidad (RM) para capturar el grado de regularidad que se aplica en un diseño. Finalmente, esta disertación presenta los distintos diseños ALARC para una tecnología de 40nm utilizando diversos grados de regularidad y diferentes impactos en área. La calidad de estos diseños se demuestra creando automáticamente una librería de 266 celdas incluyendo celdas combinacionales y secuenciales y, sintetizando diversos circuitos ITC'99. Las librerías regulares solo presentan un 9% de impacto en área comparado con diseños de celdas estándar 2D y por tanto proponiendo diseños competitivos en área. La evaluación de los circuitos considerando la LQM muestra que los diseños regulares pueden mejorar otros diseños 2D dependiendo de la implementación del layout

DFM Techniques for the Detection and Mitigation of Hotspots in Nanometer Technology

With the continuous scaling down of dimensions in advanced technology nodes, process variations are getting worse for each new node. Process variations have a large influence on the quality and yield of the designed and manufactured circuits. There is a growing need for fast and efficient techniques to characterize and mitigate the effects of different sources of process variations on the design's performance and yield. In this thesis we have studied the various sources of systematic process variations and their effects on the circuit, and the various methodologies to combat systematic process variation in the design space. We developed abstract and accurate process variability models, that would model systematic intra-die variations. The models convert the variation in process into variation in electrical parameters of devices and hence variation in circuit performance (timing and leakage) without the need for circuit simulation. And as the analysis and mitigation techniques are studied in different levels of the design ow, we proposed a flow for combating the systematic process variation in nano-meter CMOS technology. By calculating the effects of variability on the electrical performance of circuits we can gauge the importance of the accurate analysis and model-driven corrections. We presented an automated framework that allows the integration of circuit analysis with process variability modeling to optimize the computer intense process simulation steps and optimize the usage of variation mitigation techniques. And we used the results obtained from using this framework to develop a relation between layout regularity and resilience of the devices to process variation. We used these findings to develop a novel technique for fast detection of critical failures (hotspots) resulting from process variation. We showed that our approach is superior to other published techniques in both accuracy and predictability. Finally, we presented an automated method for fixing the lithography hotspots. Our method showed success rate of 99% in fixing hotspots

Design of a process monitor and of peripheral circuits enabling the characterisation of CMOS 45nm Ultra Low Power and Litho Friendly optimised standard cells

L’evoluzione della tecnologia CMOS è caratterizzata dallo scaling delle dimensioni dei dispositivi e dalla riduzione del consumo di potenza. Dal momento che le difficoltà di realizzazione aumentano al diminuire delle dimensioni, nei nodi tecnologici più recenti la velocità del processo di scaling sta diminuendo. Uno dei maggiori problemi causati dalla riduzione delle dimensioni dei dispositivi è la variabilità del processo di fabbricazione. L’obiettivo di questo progetto è quello di ridurre gli effetti che la variabilità del processo di realizzazione nel nodo tecnologico CMOS 45 nm ha sulle prestazioni della logica digitale, grazie a metodi di design non convenzionali. In questo progetto è stato realizzato un testchip per studiare e quantificare i vantaggi, in termini di prestazioni, ottenuti tramite la progettazione di librerie standard-like ottimizzate secondo canoni di litho-friendliness (LF) e ultra low power (ULP). Le standard cells LF utilizzano layout estremamente regolari. Le standard cells ULP sono progettate per operare con tensioni di alimentazioni notevolmente ridotte. Il fine principale del testchip sta nell’ottenere una panoramica della variabilità locale e globale di parametri significativi nella progettazione digitale: ad esempio la frequenza di lavoro e il consumo di potenza. Inoltre, nel testchip sono stati realizzati alcuni circuiti originali per il monitoraggio della qualità del processo di fabbricazione. The evolution of the CMOS technology is characterized by the scaling of transistors size and by the reduction of their power dissipation. In the last technology nodes the speed of the scaling process is decreasing, since the complexity of the technology increases with its size reduction. One of the main issues caused by the shrinking of the transistor size is the variability of the fabrication process. The target of this project is to reduce the effects of the variability of the realisation process in a CMOS 45 nm technology node in digital circuits performances, using unconventional design methods. A testchip is realised in this project to investigate and to quantify the improvement of the circuit performances obtained through the design of dedicated litho-friendly (LF) and of the Ultra Low Power (ULP) standard-like libraries. The LF standard cells libraries are optimised for lithography using ultra regular layout styles. The ULP standard cells library is optimised to operate at extremely low supply voltage. The main aim of the testchip is to get insight into the local and the global variability of relevant parameters for digital design, such as operating frequency and power consumption. In this testchip some structures are also included, to develop some innovative circuits that should help to monitor the quality of the technology process

Algorithmic techniques for physical design : macro placement and under-the-cell routing

With the increase of chip component density and new manufacturability constraints imposed by modern technology nodes, the role of algorithms for electronic design automation is key to the successful implementation of integrated circuits. Two of the critical steps in the physical design flows are macro placement and ensuring all design rules are honored after timing closure. This thesis proposes contributions to help in these stages, easing time-consuming manual steps and helping physical design engineers to obtain better layouts in reduced turnaround time. The first contribution is under-the-cell routing, a proposal to systematically connect standard cell components via lateral pins in the lower metal layers. The aim is to reduce congestion in the upper metal layers caused by extra metal and vias, decreasing the number of design rule violations. To allow cells to connect by abutment, a standard cell library is enriched with instances containing lateral pins in a pre-selected sharing track. Algorithms are proposed to maximize the numbers of connections via lateral connection by mapping placed cell instances to layouts with lateral pins, and proposing local placement modifications to increase the opportunities for such connections. Experimental results show a significant decrease in the number of pins, vias, and in number of design rule violations, with negligible impact on wirelength and timing. The second contribution, done in collaboration with eSilicon (a leading ASIC design company), is the creation of HiDaP, a macro placement tool for modern industrial designs. The proposed approach follows a multilevel scheme to floorplan hierarchical blocks, composed of macros and standard cells. By exploiting RTL information available in the netlist, the dataflow affinity between these blocks is modeled and minimized to find a macro placement with good wirelength and timing properties. The approach is further extended to allow additional engineer input, such as preferred macro locations, and also spectral and force methods to guide the floorplanning search. Experimental results show that the layouts generated by HiDaP outperforms those obtained by a state-of-the-art EDA physical design software, with similar wirelength and better timing when compared to manually designed tape-out ready macro placements. Layouts obtained by HiDaP have successfully been brought to near timing closure with one to two rounds of small modifications by physical design engineers. HiDaP has been fully integrated in the design flows of the company and its development remains an ongoing effort.A causa de l'increment de la densitat de components en els xip i les noves restriccions de disseny imposades pels últims nodes de fabricació, el rol de l'algorísmia en l'automatització del disseny electrònic ha esdevingut clau per poder implementar circuits integrats. Dos dels passos crucials en el procés de disseny físic és el placement de macros i assegurar la correcció de les regles de disseny un cop les restriccions de timing del circuit són satisfetes. Aquesta tesi proposa contribucions per ajudar en aquests dos reptes, facilitant laboriosos passos manuals en el procés i ajudant als enginyers de disseny físic a obtenir millors resultats en menys temps. La primera contribució és el routing "under-the-cell", una proposta per connectar cel·les estàndard usant pins laterals en les capes de metall inferior de manera sistemàtica. L'objectiu és reduir la congestió en les capes de metall superior causades per l'ús de metall i vies, i així disminuir el nombre de violacions de regles de disseny. Per permetre la connexió lateral de cel·les, estenem una llibreria de cel·les estàndard amb dissenys que incorporen connexions laterals. També proposem modificacions locals al placement per permetre explotar aquest tipus de connexions més sovint. Els resultats experimentals mostren una reducció significativa en el nombre de pins, vies i nombre de violacions de regles de disseny, amb un impacte negligible en wirelength i timing. La segona contribució, desenvolupada en col·laboració amb eSilicon (una empresa capdavantera en disseny ASIC), és el desenvolupament de HiDaP, una eina de macro placement per a dissenys industrials actuals. La proposta segueix un procés multinivell per fer el floorplan de blocks jeràrquics, formats per macros i cel·les estàndard. Mitjançant la informació RTL disponible en la netlist, l'afinitat de dataflow entre els mòduls es modela i minimitza per trobar macro placements amb bones propietats de wirelength i timing. La proposta també incorpora la possibilitat de rebre input addicional de l'enginyer, com ara suggeriments de les posicions de les macros. Finalment, també usa mètodes espectrals i de forçes per guiar la cerca de floorplans. Els resultats experimentals mostren que els dissenys generats amb HiDaP són millors que els obtinguts per eines comercials capdavanteres de EDA. Els resultats també mostren que els dissenys presentats poden obtenir un wirelength similar i millor timing que macro placements obtinguts manualment, usats per fabricació. Alguns dissenys obtinguts per HiDaP s'han dut fins a timing-closure en una o dues rondes de modificacions incrementals per part d'enginyers de disseny físic. L'eina s'ha integrat en el procés de disseny de eSilicon i el seu desenvolupament continua més enllà de les aportacions a aquesta tesi.Postprint (published version

Algorithmic techniques for physical design : macro placement and under-the-cell routing

With the increase of chip component density and new manufacturability constraints imposed by modern technology nodes, the role of algorithms for electronic design automation is key to the successful implementation of integrated circuits. Two of the critical steps in the physical design flows are macro placement and ensuring all design rules are honored after timing closure. This thesis proposes contributions to help in these stages, easing time-consuming manual steps and helping physical design engineers to obtain better layouts in reduced turnaround time. The first contribution is under-the-cell routing, a proposal to systematically connect standard cell components via lateral pins in the lower metal layers. The aim is to reduce congestion in the upper metal layers caused by extra metal and vias, decreasing the number of design rule violations. To allow cells to connect by abutment, a standard cell library is enriched with instances containing lateral pins in a pre-selected sharing track. Algorithms are proposed to maximize the numbers of connections via lateral connection by mapping placed cell instances to layouts with lateral pins, and proposing local placement modifications to increase the opportunities for such connections. Experimental results show a significant decrease in the number of pins, vias, and in number of design rule violations, with negligible impact on wirelength and timing. The second contribution, done in collaboration with eSilicon (a leading ASIC design company), is the creation of HiDaP, a macro placement tool for modern industrial designs. The proposed approach follows a multilevel scheme to floorplan hierarchical blocks, composed of macros and standard cells. By exploiting RTL information available in the netlist, the dataflow affinity between these blocks is modeled and minimized to find a macro placement with good wirelength and timing properties. The approach is further extended to allow additional engineer input, such as preferred macro locations, and also spectral and force methods to guide the floorplanning search. Experimental results show that the layouts generated by HiDaP outperforms those obtained by a state-of-the-art EDA physical design software, with similar wirelength and better timing when compared to manually designed tape-out ready macro placements. Layouts obtained by HiDaP have successfully been brought to near timing closure with one to two rounds of small modifications by physical design engineers. HiDaP has been fully integrated in the design flows of the company and its development remains an ongoing effort.A causa de l'increment de la densitat de components en els xip i les noves restriccions de disseny imposades pels últims nodes de fabricació, el rol de l'algorísmia en l'automatització del disseny electrònic ha esdevingut clau per poder implementar circuits integrats. Dos dels passos crucials en el procés de disseny físic és el placement de macros i assegurar la correcció de les regles de disseny un cop les restriccions de timing del circuit són satisfetes. Aquesta tesi proposa contribucions per ajudar en aquests dos reptes, facilitant laboriosos passos manuals en el procés i ajudant als enginyers de disseny físic a obtenir millors resultats en menys temps. La primera contribució és el routing "under-the-cell", una proposta per connectar cel·les estàndard usant pins laterals en les capes de metall inferior de manera sistemàtica. L'objectiu és reduir la congestió en les capes de metall superior causades per l'ús de metall i vies, i així disminuir el nombre de violacions de regles de disseny. Per permetre la connexió lateral de cel·les, estenem una llibreria de cel·les estàndard amb dissenys que incorporen connexions laterals. També proposem modificacions locals al placement per permetre explotar aquest tipus de connexions més sovint. Els resultats experimentals mostren una reducció significativa en el nombre de pins, vies i nombre de violacions de regles de disseny, amb un impacte negligible en wirelength i timing. La segona contribució, desenvolupada en col·laboració amb eSilicon (una empresa capdavantera en disseny ASIC), és el desenvolupament de HiDaP, una eina de macro placement per a dissenys industrials actuals. La proposta segueix un procés multinivell per fer el floorplan de blocks jeràrquics, formats per macros i cel·les estàndard. Mitjançant la informació RTL disponible en la netlist, l'afinitat de dataflow entre els mòduls es modela i minimitza per trobar macro placements amb bones propietats de wirelength i timing. La proposta també incorpora la possibilitat de rebre input addicional de l'enginyer, com ara suggeriments de les posicions de les macros. Finalment, també usa mètodes espectrals i de forçes per guiar la cerca de floorplans. Els resultats experimentals mostren que els dissenys generats amb HiDaP són millors que els obtinguts per eines comercials capdavanteres de EDA. Els resultats també mostren que els dissenys presentats poden obtenir un wirelength similar i millor timing que macro placements obtinguts manualment, usats per fabricació. Alguns dissenys obtinguts per HiDaP s'han dut fins a timing-closure en una o dues rondes de modificacions incrementals per part d'enginyers de disseny físic. L'eina s'ha integrat en el procés de disseny de eSilicon i el seu desenvolupament continua més enllà de les aportacions a aquesta tesi

Managing Variability in VLSI Circuits.

Over the last two decades, Design for Manufacturing (DFM) has emerged as an essential field within the semiconductor industry. The main objective of DFM is to reduce and, if possible, eliminate variability in integrated circuits (ICs). Numerous techniques for managing variation have emerged throughout IC design: manufacturers design instruments with minute tolerances, process engineers calibrate and characterize a given process throughout its lifetime, and IC designers strive to model and characterize variability within their devices, libraries, and circuits. This dissertation focuses on the last of these three techniques and presents material relevant to managing variability within IC design. Since characterization and modeling are essential to the analysis and reduction of variation in modern-day designs, this dissertation begins by studying various correlation models used within Statistical Static Timing Analysis (SSTA). In the end, the study shows that using complex correlation models does not necessarily result in significant error reduction within SSTA, and that simple models (which only include die-to-die and random variation) can therefore be used to achieve similar accuracy with reduced overhead and run-time. Next, the variation models, themselves, are explored and a new critical dimension (CD) model is proposed which reduces standard deviation error in SSTA by ~3X. Finally, the focus changes from the timing analysis level and moves lower in the design hierarchy to the libraries and devices that comprise the backbone of IC design. The final three chapters study mechanical stress enhancement and discuss how to fully exploit the layout dependencies of mechanically stressed silicon. The first of these three chapters presents an optimization scheme that uses the layout dependencies of stress in conjunction with dual-threshold-voltage (Vth) assignment to decrease leakage power consumption by ~24%. Next, the second of the three chapters proposes a new standard cell library design methodology, called “STEEL.” STEEL provides average delay improvements of 11% over equivalent single-Vth implementations, while consuming 2.5X less leakage than the dual-Vth alternative. Finally, the stress enhanced studies (and this document) are concluded by a new optimization scheme that combines stress enhancement with gate length biasing to achieve 2.9X leakage power savings in IC designs without modifying Vth.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/75947/1/btcline_1.pd

Design for manufactureability with regular fabrics in digital integrated circuits

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.Includes bibliographical references (p. 113-115).Integrated circuit design is limited by manufacturability. As devices scale down, sensitivity to process variation increases dramatically, making design for manufacturability a critical concern. Designers must identify the designs that generate the least systematic process variation, e.g., from pattern dependent effects, but must also build circuits that are robust to the remaining process or environmental random variations. This research addresses both ideas, by examining integrated circuit design styles and aspects that can help curb process variation and improve manufacturability and performance in future technology generations. One suggested method to reduce variation sensitivity in system designs has been the concept of design regularity. Long used in FPGAs, and SRAMs, the concept of repeatable blocks is examined in this work as a method of reducing circuit variation. Layout based variation is examined in three designs with different distinctions of regularity: a Via-Patterned Gate Array (VPGA) FPU, a Berkeley BEE-generated decoder, and a low power FPGA. The circuit level impact on variation is also considered, by examining several circuit architectures. This includes analysis of the novel Limited Switch Dynamic Logic (LSDL) style, which reduces design area and encourages regularity through minimum logic sizing.(cont.) Robustness to spatial variation and slanted plane effects is examined with a common-centroid based layout methodology for digital integrated circuits. Finally, a methodology is introduced in the form of the Monte Carlo Variation Analysis Engine whereby distributed process variables are fed into repeated simulation runs, output metrics are recorded, and regressions are measured to expose design sensitivities. The results for different layout and circuit design styles identify improvements that may be made to improve robustness to variation. We show that design regularity is a significant factor in mitigating sensitivity to process variation and is worthy of further examination.by Mehdi Gazor.S.M