Power Reductions with Energy Recovery Using Resonant Topologies

The problem of power densities in system-on-chips (SoCs) and processors has become more exacerbated recently, resulting in high cooling costs and reliability issues. One of the largest components of power consumption is the low skew clock distribution network (CDN), driving large load capacitance. This can consume as much as 70% of the total dynamic power that is lost as heat, needing elaborate sensing and cooling mechanisms. To mitigate this, resonant clocking has been utilized in several applications over the past decade. An improved energy recovering reconfigurable generalized series resonance (GSR) solution with all the critical support circuitry is developed in this work. This LC resonant clock driver is shown to save about 50% driver power (\u3e40% overall), on a 22nm process node and has 50% less skew than a non-resonant driver at 2GHz. It can operate down to 0.2GHz to support other energy savings techniques like dynamic voltage and frequency scaling (DVFS). As an example, GSR can be configured for the simpler pulse series resonance (PSR) operation to enable further power saving for double data rate (DDR) applications, by using de-skewing latches instead of flip-flop banks. A PSR based subsystem for 40% savings in clocking power with 40% driver active area reduction xii is demonstrated. This new resonant driver generates tracking pulses at each transition of clock for dual edge operation across DVFS. PSR clocking is designed to drive explicit-pulsed latches with negative setup time. Simulations using 45nm IBM/PTM device and interconnect technology models, clocking 1024 flip-flops show the reductions, compared to non-resonant clocking. DVFS range from 2GHz/1.3V to 200MHz/0.5V is obtained. The PSR frequency is set \u3e3× the clock rate, needing only 1/10th the inductance of prior-art LC resonance schemes. The skew reductions are achieved without needing to increase the interconnect widths owing to negative set-up times. Applications in data circuits are shown as well with a 90nm example. Parallel resonant and split-driver non-resonant configurations as well are derived from GSR. Tradeoffs in timing performance versus power, based on theoretical analysis, are compared for the first time and verified. This enables synthesis of an optimal topology for a given application from the GSR

Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-throughput rate transceiver

A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system for satellite as well as terrestrial purposes. Recent GaAs integrated circuit achievements are surveyed and their constituent device types are evaluated. Design considerations, on an elemental level, of the entire modem are further included for monolithic realization with practical fabrication techniques. Numerous device types, with practical monolithic compatability, are used in the design of functional blocks with sufficient performances for realization of the transceiver

A neural probe with up to 966 electrodes and up to 384 configurable channels in 0.13 μm SOI CMOS

In vivo recording of neural action-potential and local-field-potential signals requires the use of high-resolution penetrating probes. Several international initiatives to better understand the brain are driving technology efforts towards maximizing the number of recording sites while minimizing the neural probe dimensions. We designed and fabricated (0.13-μm SOI Al CMOS) a 384-channel configurable neural probe for large-scale in vivo recording of neural signals. Up to 966 selectable active electrodes were integrated along an implantable shank (70 μm wide, 10 mm long, 20 μm thick), achieving a crosstalk of −64.4 dB. The probe base (5 × 9 mm2) implements dual-band recording and a 1

Low-power digital processor for wireless sensor networks

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.Includes bibliographical references (p. 69-72).In order to make sensor networks cost-effective and practical, the electronic components of a wireless sensor node need to run for months to years on the same battery. This thesis explores the design of a low-power digital processor for these sensor nodes, employing techniques such as hardwired algorithms, lowered supply voltages, clock gating and subsystem shutdown. Prototypes were built on both a FPGA and ASIC platform, in order to verify functionality and characterize power consumption. The resulting 0.18[micro]m silicon fabricated in National Semiconductor Corporation's process was operational for supply voltages ranging from 0.5V to 1.8V. At the lowest operating voltage of 0.5V and a frequency of 100KHz, the chip performs 8 full-accuracy FFT computations per second and draws 1.2nJ of total energy per cycle. Although this energy/cycle metric does not surpass existing low-energy processors demonstrated in literature or commercial products, several low-power techniques are suggested that could drastically improve the energy metrics of a future implementation.by Daniel Frederic Finchelstein.S.M

Design methodologies for variation-aware integrated circuits

The scaling of VLSI technology has spurred a rapid growth in the semiconductor industry. With the CMOS device dimension scaling to and beyond 90nm technology, it is possible to achieve higher performance and to pack more complex functionalities on a single chip. However, the scaling trend has introduced drastic variation of process and design parameters, leading to severe variability of chip performance in nanometer regime. Also, the manufacturing community projects CMOS will scale for three to four more generations. Since the uncertainties due to variations are expected to increase in each generation, it will significantly impact the performance of design and consequently the yield. Another challenging issue in the nanometer IC design is the high power consumption due to the greater packing density, higher frequency of operation and excessive leakage power. Moreover, the circuits are usually over-designed to compensate for uncertainties due to variations. The over-designed circuits not only make timing closure difficult but also cause excessive power consumption. For portable electronics, excessive power consumption may reduce battery life; for non-portable systems it may impose great difficulties in cooling and packaging. The objective of my research has been to develop design methodologies to address variations and power dissipation for reliable circuit operation. The proposed work has been divided into three parts: the first part addresses the issues related with power/ground noise induced by clock distribution network and proposes techniques to reduce power/ground noise considering the effects of process variations. The second part proposes an elastic pipeline scheme for random circuits with feedback loops. The proposed scheme provides a low-power solution that has the same variation tolerance as the conventional approaches. The third section deals with discrete buffer and wire sizing for link-based non-tree clock network, which is an energy efficient structure for skew tolerance to variations. For the power/ground noise problem, our approach could reduce the peak current and the delay variations by 50% and 51% respectively. Compared to conventional approach, the elastic timing scheme reduces power dissipation by 20% − 27%. The sizing method achieves clock skew reduction of 45% with a small increase in power dissipation

Design and Analysis of an Adaptive Asynchronous System Architecture for Energy Efficiency

Power has become a critical design parameter for digital CMOS integrated circuits. With performance still garnering much concern, a central idea has emerged: minimizing power consumption while maintaining performance. The use of dynamic voltage scaling (DVS) with parallelism has shown to be an effective way of saving power while maintaining performance. However, the potency of DVS and parallelism in traditional, clocked synchronous systems is limited because of the strict timing requirements such systems must comply with. Delay-insensitive (DI) asynchronous systems have the potential to benefit more from these techniques due to their flexible timing requirements and high modularity. This dissertation presents the design and analysis of a real-time adaptive DVS architecture for paralleled Multi-Threshold NULL Convention Logic (MTNCL) systems. Results show that energy-efficient systems with low area overhead can be created using this approach

Oxygen-insertion Technology for CMOS Performance Enhancement

Until 2003, the semiconductor industry followed Dennard scaling rules to improve complementary metal-oxide-semiconductor (CMOS) transistor performance. However, performance gains with further reductions in transistor gate length are limited by physical effects that do not scale commensurately with device dimensions: short-channel effects (SCE) due to gate-leakage-limited gate-oxide thickness scaling, channel mobility degradation due to enhanced vertical electric fields, increased parasitic resistances due to reductions in source/drain (S/D) contact area, and increased variability in transistor performance due to random dopant fluctuation (RDF) effects and gate work function variations (WFV). These emerging scaling issues, together with increased process complexity and cost, pose severe challenges to maintaining the exponential scaling of transistor dimensions. This dissertation discusses the benefits of oxygen-insertion (OI) technology, a CMOS performance booster, for overcoming these challenges. The benefit of OI technology to mitigate the increase in sheet resistance ($R_{sh}$) with decreasing junction depth ($X_J$) for ultra-shallow-junctions (USJs) relevant for deep-sub-micron planar CMOS transistors is assessed through the fabrication of $R_{sh}$ test structures, electrical characterization, and technology computer-aided design (TCAD) simulations. Experimental and secondary ion mass spectroscopy (SIMS) analyses indicate that OI technology can facilitate low-resistivity USJ formation by reducing $R_{sh}$ and $X_J$ due to retarded transient-enhanced-diffusion (TED) effects and enhanced dopant retention during post-implantation thermal annealing. It is also shown that a low-temperature-oxide (LTO) capping can increase $R_{sh}$ unfavorably due to lower dopant activation levels, which can be alleviated by OI technology. This dissertation extends the evaluation of OI technology to advanced FinFET technology, targeting 7/8-nm low power technology node. A bulk-Si FinFET design comprising a super-steep retrograde (SSR) fin channel doping profile achievable with OI technology is studied by three-dimensional (3-D) TCAD simulations. As compared with the conventional bulk-Si (control) FinFET design with a heavily-doped fin channel doping profile, SSR FinFETs can achieve higher $I_{on}/I_{off}$ ratios and reduce the sensitivity of device performance to variations due to the lightly doped fin channel. As compared with the SOI FinFET design, SSR FinFETs can achieve similarly low $V_{DD,min}$ for 6T-SRAM cell yield estimation. Both SSR and SOI design can provide for as much as 100 mV reduction in $V_{DD,min}$ compared with the control FinFET design. Overall, the SSR FinFET design that can be achieved with OI technology is demonstrated to be a cheaper alternative to the SOI FinFET technology for extending CMOS scaling beyond the 10-nm node. Finally, this dissertation investigates the benefits of OI technology for reducing the Schottky barrier height ($\Phi_{Bp}$) of a Pt/Ti/p-type Si metal-semiconductor (M/S) contact, which can be expected to help reduce the specific contact resistivity for a p-type silicon contact. Electrical measurements of back-to-back Schottky diodes, SIMS, and X-ray photoelectron spectroscopy (XPS) show that the reduction in $\Phi_{Bp}$ is associated with enhanced Ti 2p and Si 2p core energy level shifts. OI technology is shown to favor low-$\Phi_{Bp}$ Pt monosilicide formation during forming gas anneal (FGA) by suppressing the grain boundary diffusion of Pt atoms into the crystalline Si substrate