Semi-empirical model of MOST and passive devices focused on narrowband RF blocks

This paper presents a semi-empirical modeling of MOST and passive elements to be used in narrowband radiofrequency blocks for nanometer technologies. This model is based on a small set of look-up tables (LUTs) obtained via electrical simulations. The MOST description is valid for all-inversion regions of MOST and the data is extracted as function of the gm=ID characteristic; for the passive devices the LUTs include a simplified model of the element and its principal parasitic at the working frequency f0. These semi-empirical models are validated by designing a set of 2.4-GHz LNAs and 2.4-GHz and 5-GHz VCOs in three different MOST inversion regions

Distributed Integrated Circuits: An Alternative Approach to High-Frequency Design

Distributed integrated circuits are presented as a methodology to design high-frequency communication building blocks. Distributed circuits operate based on multiple parallel signal paths working in synchronization that can be used to enhance the frequency of operation, combine power, and enhance the robustness of the design. These multiple signal paths usually result in strong couplings inside the circuit that necessitate a treatment spanning architecture, circuits, devices, and electromagnetic levels of abstraction

Compact modelling in RF CMOS technology

With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years. Today, the standard CMOS technology has become a popular choice for realizing radio frequency (RF) applications. The focus of the thesis is on device compact modelling methodologies in RF CMOS. Compact models oriented to integrated circuit (ICs) computer automatic design (CAD) are the key component of a process design kit (PDK) and the bridge between design houses and foundries. In this work, a novel substrate model is proposed for accurately characterizing the behaviour of RF-MOSFETs with deep n-wells (DNW). A simple test structure is presented to directly access the substrate parasitics from two-port measurements in DNWs. The most important passive device in RFIC design in CMOS is the spiral inductor. A 1-pi model with a novel substrate network is proposed to characterize the broadband loss mechanisms of spiral inductors. Based on the proposed 1-pi model, a physics-originated fully-scalable 2-pi model and model parameter extraction methodology are also presented for spiral inductors in this work. To test and verify the developed active and passive device models and model parameter extraction methods, a series of RF-MOSFETs and planar on-chip spiral inductors with different geometries manufactured by employing standard RF CMOS processes were considered. Excellent agreement between the measured and the simulated results validate the compact models and modelling technologies developed in this work

On-chip Spiral Inductor/transformer Design And Modeling For Rf Applications

Passive components are indispensable in the design and development of microchips for high-frequency applications. Inductors in particular are used frequently in radio frequency (RF) IC\u27s such as low-noise amplifiers and oscillators. High performance inductor has become one of the critical components for voltage controlled oscillator (VCO) design, for its quality factor (Q) value directly affects the VCO phase noise. The optimization of inductor layout can improve its performance, but the improvement is limited by selected technology. Inductor performance is bounded by the thin routing metal and small distance from lossy substrate. On the other hand, the in-accurate inductor modeling further limits the optimization process. The on-chip inductor has been an important research topic since it was first proposed in early 1990\u27s. Significant amount of study has been accomplished and reported in literature; whereas some methods have been used in industry, but not released to public. It is of no doubt that a comprehensive solution is not exist yet. A comprehensive study of previous will be first address. Later author will point out the in-adequacy of skin effect and proximity effect as cause of current crowding in the inductor metal. A model method embedded with new explanation of current crowding is proposed and its applicability in differential inductor and balun is validated. This study leads to a robust optimization routine to improve inductor performance without any addition technology cost and development

Parametric macromodeling of integrated inductors for RF circuit design

Nowadays, parametric macromodeling techniques are widely used to describe electromagnetic structures. In this contribution, the application of such parametric macromodeling techniques to the design of integrated inductors and radio-frequency circuit design is investigated. In order to allow such different operations, a new modeling methodology is proposed, which improves the modeling accuracy when compared to former techniques. The new methodology is tailored to the unique characteristics of the devices under study. The obtained parametric macromodel is then used in a synthesis methodology and in the design of a voltage controlled oscillator in a 0.35-μm CMOS technologyMinisterio de Economía y Competitividad TEC2013-45638-C3- 3-RJunta de Andalucía P12-TIC-148

Scalable Energy-Recovery Architectures.

Energy efficiency is a critical challenge for today's integrated circuits, especially for high-end digital signal processing and communications that require both high throughput and low energy dissipation for extended battery life. Charge-recovery logic recovers and reuses charge using inductive elements and has the potential to achieve order-of-magnitude improvement in energy efficiency while maintaining high performance. However, the lack of large-scale high-speed silicon demonstrations and inductor area overheads are two major concerns. This dissertation focuses on scalable charge-recovery designs. We present a semi-automated design flow to enable the design of large-scale charge-recovery chips. We also present a new architecture that uses in-package inductors, eliminating the area overheads caused by the use of integrated inductors in high-performance charge-recovery chips. To demonstrate our semi-automated flow, which uses custom-designed standard-cell-like dynamic cells, we have designed a 576-bit charge-recovery low-density parity-check (LDPC) decoder chip. Functioning correctly at clock speeds above 1 GHz, this prototype is the first-ever demonstration of a GHz-speed charge-recovery chip of significant complexity. In terms of energy consumption, this chip improves over recent state-of-the-art LDPCs by at least 1.3 times with comparable or better area efficiency. To demonstrate our architecture for eliminating inductor overheads, we have designed a charge-recovery LDPC decoder chip with in-package inductors. This test-chip has been fabricated in a 65nm CMOS flip-chip process. A custom 6-layer FC-BGA package substrate has been designed with 16 inductors embedded in the fifth layer of the package substrate, yielding higher Q and significantly improving area efficiency and energy efficiency compared to their on-chip counterparts. From measurements, this chip achieves at least 2.3 times lower energy consumption with better area efficiency over state-of-the-art published designs.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/116653/1/terryou_1.pd

Analog and Mixed Signal Verification

More and more electronic systems have components that are not purely digital. Verification of such systems is a much less developed discipline than the digital equivalents and the application of formal (mathematically complete) techniques is a nascent area. In this paper, we will discuss the nature of analog circuit design and describe the way verification is done in practice today. We will describe some “formal” approaches coming from the analog design community. We will describe some of the approaches to formal verification that have been presented in recent literature. Finally, we will mention some areas where there are opportunities for future work