Electrical Transport Properties of Amorphous Ge15Te85 Thin Films Using Scanning Probe Microscopy for Phase Change Memory Applications

Chalcogenide glassy semiconductors exhibit ultrafast reversible electrical switching from highly resistive ‘OFF’ state to a low resistive ‘ON’ state in the amorphous phase under the excitation of suitable electrical pulses. The contrasting features associated with the amorphous and crystalline phases are exploited for use in phase change memory (PCM) devices. The phase change memories are considered as potential candidates to replace the conventional flash memories due to their low energy consumption and scalability. Phase change materials are characterized by their programming characteristics, such as programming currents and programming speeds. Faster crystallizing materials such as GeTe and Ge2Sb2Te5 have proven to be potential candidates for phase change memory. In spite of the slow crystallization exhibited by GeTe6 it shows a stable switching and is used as ovonic threshold switching (OTS) selector device in a memory device. The dual stage crystallization of GeTe6 is the major drawback which has to be analyzed for fabricating OTS device which is better compatible with a phase change memory cell

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

On Demand Nanoscale Phase Manipulation of Vanadium Dioxide by Scanning Probe Lithography

This dissertation focuses on nanoscale phase manipulations of Vanadium Dioxide. Nanoscale control of material properties is a current obstacle for the next generation of optoelectronic and photonic devices. Vanadium Dioxide is a strongly correlated material with an insulator-metal phase transition at approximately 345 K that generates dramatic electronic and optical property changes. However, the development of industry device application based on this phenomenon has been limited thus far due to the macroscopic scale and the volatile nature of the phase transition. In this work these limitations are assessed and circumvented. A home-built, variable temperature, scanning near-field optical microscope was engineered for Vanadium Dioxide manipulations and detections. Using this instrument, various scanning probe lithography based methods are implemented to induce new nanoscale phases. Three new phase transitions are discovered; a monoclinic metallic at the nanoscale, a rutile metallic metastable phase, and a van der Waals layered insulator. These new phases are studied and characterized to further understand phase manipulations in strongly correlated materials. One of the new phase transitions, monoclinic metallic, showcases plasmonic excitations. This phenomenon is used to demonstrate various nanoplasmonic devices such as rewritable waveguides, spatially modulated resonators, and reconfigurable planar optics. Finally, Oxygen Vacancy diffusion of the monoclinic structure is monitored to determine the temporal limitation for device applications. The discovery, demonstration, and study of these phases clearly shows the ability to manipulate Vanadium Dioxide on the nanoscale for the first time. Phase control is accomplished under ambient conditions and is stable over long periods of time. This technology opens the door for multifunctional device application using strongly correlated materials

A POWER DISTRIBUTION SYSTEM BUILT FOR A VARIETY OF UNATTENDED ELECTRONICS

A power distribution system (PDS) delivers electrical power to a load safely and effectively in a pre-determined format. Here format refers to necessary voltages, current levels and time variation of either as required by the empowered system. This formatting is usually referred as "conditioning". The research reported in this dissertation presents a complete system focusing on low power energy harvesting, conditioning, storage and regulation. Energy harvesting is a process by which ambient energy present in the environment is captured and converted to electrical energy. In recent years, it has become a prominent research area in multiple disciplines. Several energy harvesting schemes have been exploited in the literature, including solar energy, mechanic energy, radio frequency (RF) energy, thermal energy, electromagnetic energy, biochemical energy, radioactive energy and so on. Different from the large scale energy generation, energy harvesting typically operates in milli-watts or even micro-watts power levels. Almost all energy harvesting schemes require stages of power conditioning and intermediate storage - batteries or capacitors that reservoir energy harvested from the environment. Most of the ambient energy fluctuates and is usually weak. The purpose of power conditioning is to adjust the format of the energy to be further used, and intermediate storage smoothes out the impact of the fluctuations on the power delivered to the load. This dissertation reports an end to end power distribution system that integrates different functional blocks including energy harvesting, power conditioning, energy storage, output regulation and system control. We studied and investigated different energy harvesting schemes and the dissertation places emphasis on radio frequency energy harvesting. This approach has proven to be a viable power source for low-power electronics. However, it is still challenging to obtain significant amounts of energy rapidly and efficiently from the ambient. Available RF power is usually very weak, leading to low voltage applied to the electronics. The power delivered to the PDS is hard to utilize or store. This dissertation presents a configuration including a wideband rectenna, a switched capacitor voltage boost converter and a thin film flexible battery cell that can be re-charged at an exceptionally low voltage. We demonstrate that the system is able to harvest energy from a commercially available hand-held communication device at an overall efficiency as high as 7.7 %. Besides the RF energy harvesting block, the whole PDS includes a solar energy harvesting block, a USB recharging block, a customer selection block, two battery arrays, a control block and an output block. The functions of each of the blocks have been tested and verified. The dissertation also studies and investigates several potential applications of this PDS. The applications we exploited include an ultra-low power tunable neural oscillator, wireless sensor networks (WSNs), medical prosthetics and small unmanned aerial vehicles (UAVs). We prove that it is viable to power these potential loads through energy harvesting from multiple sources

DEVELOPMENT OF NANO/MICROELECTROMECHANICAL SYSTEM (N/MEMS) SWITCHES

Ph.DDOCTOR OF PHILOSOPH

Nanocharacterisation of zirconia based RRAM devices deposited via PLD

With CMOS technology reaching fundamental scaling limitations, innovative data storage technologies have been a topic of great academic and industrial interest. Emerging technologies, not all based in semiconductors, that exploit new variables like spin, polarisation, phase and resistance, are being investigated for their feasibility as data storage devices. One very promising technology is resistive switching random-access memory (RRAM). In RRAM devices memory operation relies on the change in resistance of a metal-insulator-metal structure, typically induced by ion migration combined with redox processes. Here, RRAM devices based on amorphous and crystalline zirconia have been prepared by means of pulsed laser deposition (PLD). The thesis starts with an overview of the commissioning of a new PLD system, with a focus on characterisation of the laser ablation plume, reduction of the density of “droplets” and development of the optimal system parameters, like temperature, oxygen pressure and laser fluence, for the preparation of zirconia based RRAM devices. For both amorphous and crystalline devices, titanium was used as an active electrode as it promotes the introduction of oxygen vacancies which are responsible for inducing resistive switching. In addition, growth of epitaxial Nb doped strontium titanate (Nb:STO) via PLD was achieved, as the high temperatures used during growth hinder the use of metallic bottom electrodes. Both types of RRAM devices have good performance figures, with ON/OFF ratios of 1000 and 10000 and endurance of more than 10000 cycles. Conduction mechanisms point to two different types of resistive switching: insulator-to-metal transition and trapping and de-trapping at the metal-oxide interfaces. Surprisingly, both conduction mechanisms were found to coexists on amorphous devices. Scanning transmission electron microscopy and electron energy loss spectroscopy were used to investigate how interfaces can influence resistive switching. Results indicate that titanium, in addition to introducing oxygen vacancies, creates an ohmic interface with zirconia which forces the resistive switching to take place on the inert metal-oxide Schottky interface, which was not described so far

Tunable Terahertz Metamaterials with Germanium Telluride Components

Terahertz (THz) technology is an emerging field with many exciting applications. THz waves can be used to locate explosives and illicit drugs in security applications, or DNA and other molecule resonances in medical applications. THz frequencies represent the next level of modern, high-speed computing, but they also can be used for covert battlefield communications links. Metamaterials are an integral part of THz technology because they can be used to create exotic material properties—permittivities and permeabilities—in a part of the frequency spectrum that is otherwise rather empty and passive. This work aims to acquire a fuller understanding of THz metamaterials in terms of background and theory, and then use this understanding to create a few novel, actively tunable structures using the phase-change material germanium telluride

Cutting Edge Nanotechnology

The main purpose of this book is to describe important issues in various types of devices ranging from conventional transistors (opening chapters of the book) to molecular electronic devices whose fabrication and operation is discussed in the last few chapters of the book. As such, this book can serve as a guide for identifications of important areas of research in micro, nano and molecular electronics. We deeply acknowledge valuable contributions that each of the authors made in writing these excellent chapters