SRAM stability metric under transient noise

ventional way to analyze the robustness of an SRAM bit cell is to quantify its immunity to static noise. The static immunity to disturbances like process and mi smatch variations, bulk noises, supply rings variations, temperature changes is well characterized by means of the Static Noise Margin (SNM) defined as the maximum applicable series voltage at the inputs which causes no change in the data retention nodes. However, a significant number of disturbance sources present a transient behavior which is ignored by the static analysis but has to be taken in consideration for a complete characterization of the cell’s behavior. In this paper, a metric to evaluate the cell robustness in the presence of transient voltage noise is proposed based on determining the energy of the noise signal which is able to flip the cell’s state. The Dynamic Noise Margin(DNM) metric is defined as the minimum energy of the voltage noise signal able to flip the cell.Postprint (published version

A Survey of Fault-Injection Methodologies for Soft Error Rate Modeling in Systems-on-Chips

The development of process technology has increased system performance, but the system failure probability has also significantly increased. It is important to consider the system reliability in addition to the cost, performance, and power consumption. In this paper, we describe the types of faults that occur in a system and where these faults originate. Then, fault-injection techniques, which are used to characterize the fault rate of a system-on-chip (SoC), are investigated to provide a guideline to SoC designers for the realization of resilient SoCs

Review on suitable eDRAM configurations for next nano-metric electronics era

We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform their memory cell counterparts, we explored different technological proposals and operational regimes where it can be located. The best memory cell performance is observed for the 3T1D-eDRAM cell when it is based on FinFET devices. Both device variability and SEU appear as key reliability issues for memory cells at sub-22nm technology node.Peer ReviewedPostprint (author's final draft

Analysis of SoftError Rates for future technologies

La fiabilitat s'ha convertit en un aspecte important del disseny de sistemes informàtics a causa de la miniaturització de la tecnologia. En aquest projecte s'analitza la fiabilitat de les tecnologies actuals i futures simulant els components bàsics d'un processador

Radiation hard FPGA configuration techniques using silicon on sapphire

 Once entirely the domain of space-borne applications, the effects of high energy charged particles on electronics systems is now also a concern for terrestrial devices. Reconfigurable components such as FPGAs are particularly vulnerable to radiation single event effects (SEU) as they carry a large amount of memory within a relatively small amount of circuit area. This thesis presents a Silicon on Insulator (SOI) based configuration memory system in a radiation hard reconfiguration system. The SOI technology used in this particular work is Silicon on Sapphire, where Sapphire is used as the body insulator. A non-volatile storage cell, able to be manufactured in a standard single polysilicon SOI CMOS process with no special layers, is combined with a Schmitt amplifier which result a final structure that exhibits two unique characteristics enhancing its resistance to radiation. Firstly, it is impossible for a radiation induced event to permanently flip the configuration state. Secondly, a partial de-programming resulting in a reduction in the magnitude of the storage cell voltage causes a large change in static current that can be very easily detected using a conventional sense amplifier. A simple current detector of the type used in conventional RAM circuits allows the configuration memory to be set up to exhibit self-correcting, or “auto-scrubbing” behavior. While the combination of SOI EEPROM and Schmitt exhibits high intrinsic resistance to radiation induced errors, it is still possible for a sequence of two particle strikes to cause the configuration value to be lost. Estimates are made of the Soft error Rate (SER) performance of the overall configuration memory structure. A trial layout of a configurable Look Up Table (LUT) is presented as an example of how the SOS EEPROM configuration cell would be deployed in a real system

Measurement and analysis of soft error vulnerability of low-voltage logic and memory circuits

Scaling the supply voltage into the sub/near-threshold domain is one of the most effective methods for improving the energy efficiency of next-generation electronic microsystems. Unfortunately, the relationship between low-voltage operation and radiation-induced soft error rate is not widely known, as little research has been previously performed and reported for soft-error susceptibility of on-chip memory and logic at very low supply voltages. This information is critical for low-voltage circuit designers, as many applications that would benefit from the energy effi­ciency of sub/near-threshold also require high reliability. This work first details the design and implementation of a portable soft error reference platform, specif­ically targeting very low-voltage operation. The circuit-level details of a TSMC 65nm test-chip design are given, along with an analysis of data from experiments performed at Los Alamos Neutron Science Center (LANSCE) and the OSU Radi­ation Center. Once this soft-error rate is known, error resiliency techniques must be utilized for increased processor reliability. The design and implementation of an error-resilient, near-threshold SIMD processor in an IBM 45nm SOI process will also be covered. This prototype demonstrates both increased reliability and improved throughput over a conventional SIMD pipeline while operating in near-threshold

Reliability-energy-performance optimisation in combinational circuits in presence of soft errors

PhD ThesisThe reliability metric has a direct relationship to the amount of value produced by a circuit, similar to the performance metric. With advances in CMOS technology, digital circuits become increasingly more susceptible to soft errors. Therefore, it is imperative to be able to assess and improve the level of reliability of these circuits. A framework for evaluating and improving the reliability of combinational circuits is proposed, and an interplay between the metrics of reliability, energy and performance is explored. Reliability evaluation is divided into two levels of characterisation: stochastic fault model (SFM) of the component library and a design-specific critical vector model (CVM). The SFM captures the properties of components with regard to the interference which causes error. The CVM is derived from a limited number of simulation runs on the specific design at the design time and producing the reliability metric. The idea is to move the high-complexity problem of the stochastic characterisation of components to the generic part of the design process, and to do it just once for a large number of specific designs. The method is demonstrated on a range of circuits with various structures. A three-way trade-off between reliability, energy, and performance has been discovered; this trade-off facilitates optimisations of circuits and their operating conditions. A technique for improving the reliability of a circuit is proposed, based on adding a slow stage at the primary output. Slow stages have the ability to absorb narrow glitches from prior stages, thus reducing the error probability. Such stages, or filters, suppress most of the glitches generated in prior stages and prevent them from arriving at the primary output of the circuit. Two filter solutions have been developed and analysed. The results show a dramatic improvement in reliability at the expense of minor performance and energy penalties. To alleviate the problem of the time-consuming analogue simulations involved in the proposed method, a simplification technique is proposed. This technique exploits the equivalence between the properties of the gates within a path and the equivalence between paths. On the basis of these equivalences, it is possible to reduce the number of simulation runs. The effectiveness of the proposed technique is evaluated by applying it to different circuits with a representative variety of path topologies. The results show a significant decrease in the time taken to estimate reliability at the expense of a minor decrease in the accuracy of estimation. The simplification technique enables the use of the proposed method in applications with complex circuits.Ministry of Education and Scientific Research in Liby