Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling

This paper analyses the effect of employing an Si on semi-insulating SiC (Si/SiC) device architecture for the implementation of 600-V LDMOSFETs using junction isolation and dielectric isolation reduced surface electric field technologies for high-temperature operations up to 300 °C. Simulations are carried out for two Si/SiC transistors designed with either PN or silicon-on-insulator (SOI) and their equivalent structures employing bulk-Si or SOI substrates. Through comparisons, it is shown that the Si/SiC devices have the potential to operate with an offstate leakage current as low as the SOI device. However, the low-side resistance of the SOI LDMOSFET is smaller in value and less sensitive to temperature, outperforming both Si/SiC devices. Conversely, under high-side configurations, the Si/SiC transistors have resistances lower than that of the SOI at high substrate bias, and invariable with substrate potential up to −200 V, which behaves similar to the bulkSi LDMOS at 300 K. Furthermore, the thermal advantage of the Si/SiC over other structures is demonstrated by using a rectangle power pulse setup in Technology Computer-Aided design simulations

A study of Radiation-Tolerant Voltage-Controlled Oscillators designs in 65 nm bulk and 28 nm FDSOI CMOS technologies

Phase-locked loop (PLL) systems are widely employed in integrated circuits for space analog devices and communications systems that operate in radiation environments, where significant perturbations, especially in terms of phase noise, can be generated due to radiation particles. Among all the blocks that form a PLL system, previous research suggests the voltage-controlled oscillator (VCO) is one of the most critical components in terms of radiation tolerance and electric performance. Ring oscillators (ROs) and LC-tank VCOs have been commonly employed in high-performance PLLs. Nevertheless, both structures have drawbacks including a limited tuning range, high sensitivity to phase noise, limited radiation tolerance, and large design areas. In order to fulfill these high-performance requirements, a current-model logic (CML) based RO-VCO is presented as a possible solution capable of reducing the limitations of the commonly used structures and exploiting their advantages. The proposed hybrid VCO model includes passive components in its design which are the key parameters that define oscillation frequency of this structure. This tunable oscillator has been designed and tested in 65nm Bulk and 28 nm Fully depleted silicon-on-insulator (FDSOI) CMOS technologies The 65nm testchip was designed to compare the behavior of the proposed CML VCO with a current-starved RO and a radiation hardened by design (RHBD) LC-tank VCO in terms of tuning range, phase noise, Single event effect (SEE) sensitivity and design area. Simulations were carried out by applying a double exponential current pulse into different sensitive nodes of the three VCOs. In addition, SEE tests were conducted using pulsed laser experiments. Simulation and test results show that a CML VCO can effectively overcome the limitations presented by a RO-VCO and LC-tank VCO, achieving a wide range of tuning, and low sensitivity to noise and SEEs without the need for a large cross-section. Further studies of the proposed CML VCO were done on 28nm FDSOI in order to reduce the leakage current and increase the switching speed. the same current-starved VCO and CML VCO were implemented on this testchip, and simulations were performed by injecting a double exponential current pulse energy into the previously defined sensitive nodes. The results show SEE sensitivity improvement without narrowing the tuning range or affecting the phase noise response

Semiconductor technology program. Progress briefs

The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included

Modeling and Simulation of Subthreshold Characteristics of Short-Channel Fully-Depleted Recessed-Source/Drain SOI MOSFETs

Non-conventional metal-oxide-semiconductor (MOS) devices have attracted researchers‟ attention for future ultra-large-scale-integration (ULSI) applications since the channel length of conventional MOS devices approached the physical limit. Among the non-conventional CMOS devices which are currently being pursued for the future ULSI, the fully-depleted (FD) SOI MOSFET is a serious contender as the SOI MOSFETs possess some unique features such as enhanced short-channel effects immunity, low substrate leakage current, and compatibility with the planar CMOS technology. However, due to the ultra-thin source and drain regions, FD SOI MOSFETs possess large series resistance which leads to the poor current drive capability of the device despite having excellent short-channel characteristics. To overcome this large series resistance problem, the source/drain area may be increased by extending S/D either upward or downward. Hence, elevated-source/drain (E-S/D) and recessed-source/drain (Re-S/D) are the two structures which can be used to minimize the series resistance problem. Due to the undesirable issues such as parasitic capacitance, current crowding effects, etc. with E-S/D structure, the Re-S/D structure is a better choice. The FD Re-S/D SOI MOSFET may be an attractive option for sub-45nm regime because of its low parasitic capacitances, reduced series resistance, high drive current, very high switching speed and compatibility with the planar CMOS technology. The present dissertation is to deal with the theoretical modeling and computer-based simulation of the FD SOI MOSFETs in general, and recessed source/drain (Re-S/D) ultra-thin-body (UTB) SOI MOSFETs in particular. The current drive capability of Re-S/D UTB SOI MOSFETs can be further improved by adopting the dual-metal-gate (DMG) structure in place of the conventional single-metal-gate-structure. However, it will be interesting to see how the presence of two metals as gate contact changes the subthreshold characteristics of the device. Hence, the effects of adopting DMG structure on the threshold voltage, subthreshold swing and leakage current of Re-S/D UTB SOI MOSFETs have been studied in this dissertation. Further, high-k dielectric materials are used in ultra-scaled MOS devices in order to cut down the quantum mechanical tunneling of carriers. However, a physically thick gate dielectric causes fringing field induced performance degradation. Therefore, the impact of high-k dielectric materials on subthreshold characteristics of Re-S/D SOI MOSFETs needs to be investigated. In this dissertation, various subthreshold characteristics of the device with high-k gate dielectric and metal gate electrode have been investigated in detail. Moreover, considering the variability problem of threshold voltage in ultra-scaled devices, the presence of a back-gate bias voltage may be useful for ultimate tuning of the threshold voltage and other characteristics. Hence, the impact of back-gate bias on the important subthreshold characteristics such as threshold voltage, subthreshold swing and leakage currents of Re-S/D UTB SOI MOSFETs has been thoroughly analyzed in this dissertation. The validity of the analytical models are verified by comparing model results with the numerical simulation results obtained from ATLAS™, a device simulator from SILVACO Inc

Parts application handbook study

The requirements for a NASA application handbook for standard electronic parts are determined and defined. This study concentrated on identifying in detail the type of information that designers and parts engineers need and expect in a parts application handbook for the effective application of standard parts on NASA projects

Impedance matching and DC-DC converter designs for tunable radio frequency based mobile telecommunication systems

Tunability and adaptability for radio frequency (RF) front-ends are highly desirable because they not only enhance functionality and performance but also reduce the circuit size and cost. This thesis presents a number of novel design strategies in DC-DC converters, impedance networks and adaptive algorithms for tunable and adaptable RF based mobile telecommunication systems. Specifically, the studies are divided into three major directions: (a) high voltage switch controller based DC-DC converters for RF switch actuation; (b) impedance network designs for impedance transformation of RF switches; and (c) adaptive algorithms for determining the required impedance states at the RF switches. In the first stage, two-phase step-up switched-capacitor (SC) DC-DC converters are explored. The SC converter has a simple control method and a reduced physical volume. The research investigations started with the linear and the non-linear voltage gain topologies. The non-linear voltage gain topology provides a higher voltage gain in a smaller number of stages compared to the linear voltage gain topology. Amongst the non-linear voltage gain topologies, a Fibonacci SC converter has been identified as having lower losses and a higher conversion ratio compared to other topologies. However, the implementation of a high voltage (HV) gain Fibonacci SC converter is complex due to the requirement of widely different gate voltages for the transistors in the Fibonacci converter. Gate driving strategies have been proposed that only require a few auxiliary transistors in order to provide the required boosted voltages for switching the transistors on and off. This technique reduces the design complexity and increases the reliability of the HV Fibonacci SC converter. For the linear voltage gain topology, a high performance complementary-metaloxide- semiconductor (CMOS) based SC DC-DC converter has been proposed in this work. The HV SC DC-DC converter has been designed in low voltage (LV) transistors technology in order to achieve higher voltage gain. Adaptive biasing circuits have been proposed to eliminate the leakage current, hence avoiding latch-up which normally occurs with low voltage transistors when they are used in a high voltage design. Thus, the SC DC-DC converter achieves more than 25% higher boosted voltage compared to converters that use HV transistors. The proposed design provides a 40% power reduction through the charge recycling circuit that reduces the effect of non-ideality in integrated HV capacitors. Moreover, the SC DC-DC converter achieves a 45% smaller area than the conventional converter through optimising the design parameters. In the second stage, the impedance network designs for transforming the impedance of RF switches to the maximum achievable impedance tuning region are investigated. The maximum achievable tuning region is bounded by the fundamental properties of the selected impedance network topology and by the tunable values of the RF switches that are variable over a limited range. A novel design technique has been proposed in order to achieve the maximum impedance tuning region, through identifying the optimum electrical distance between the RF switches at the impedance network. By varying the electrical distance between the RF switches, high impedance tuning regions are achieved across multi frequency standards. This technique reduces the cost and the insertion loss of an impedance network as the required number of RF switches is reduced. The prototype demonstrates high impedance coverages at LTE (700MHz), GSM (900MHz) and GPS (1575MHz). Integration of a tunable impedance network with an antenna for frequency-agility at the RF front-end has also been discussed in this work. The integrated system enlarges the bandwidth of a patch antenna by four times the original bandwidth and also improves the antenna return loss. The prototype achieves frequency-agility from 700MHz to 3GHz. This work demonstrates that a single transceiver with multi frequency standards can be realised by using a tunable impedance network. In the final stage, improvement to an adaptive algorithm for determining the impedance states at the RF switches has been proposed. The work has resulted in one more novel design techniques which reduce the search time in the algorithm, thus minimising the risk of data loss during the impedance tuning process. The approach reduces the search time by more than an order of magnitude by exploiting the relationships among the mass spring’s coefficient values derived from the impedance network parameters, thereby significantly reducing the convergence time of the algorithm. The algorithm with the proposed technique converges in less than half of the computational time compared to the conventional approach, hence significantly improving the search time of the algorithm. The design strategies proposed in this work contribute towards the realisation of tunable and adaptable RF based mobile telecommunication systems

Front-end receiver for miniaturised ultrasound imaging

Point of care ultrasonography has been the focus of extensive research over the past few decades. Miniaturised, wireless systems have been envisaged for new application areas, such as capsule endoscopy, implantable ultrasound and wearable ultrasound. The hardware constraints of such small-scale systems are severe, and tradeoffs between power consumption, size, data bandwidth and cost must be carefully balanced. To address these challenges, two synthetic aperture receiver architectures are proposed and compared. The architectures target highly miniaturised, low cost, B-mode ultrasound imaging systems. The first architecture utilises quadrature (I/Q) sampling to minimise the signal bandwidth and computational load. Synthetic aperture beamforming is carried out using a single-channel, pipelined protocol in order to minimise system complexity and power consumption. A digital beamformer dynamically apodises and focuses the data by interpolating and applying complex phase rotations to the I/Q samples. The beamformer is implemented on a Spartan-6 FPGA and consumes 296mW for a frame rate of 7Hz. The second architecture employs compressive sensing within the finite rate of innovation (FRI) framework to further reduce the data bandwidth. Signals are sampled below the Nyquist frequency, and then transmitted to a digital back-end processor, which reconstructs I/Q components non-linearly, and then carries out synthetic aperture beamforming. Both architectures were tested in hardware using a single-channel analogue front-end (AFE) that was designed and fabricated in AMS 0.35μm CMOS. The AFE demodulates RF ultrasound signals sequentially into I/Q components, and comprises a low-noise preamplifier, mixer, programmable gain amplifier (PGA) and lowpass filter. A variable gain low noise preamplifier topology is used to enable quasi-exponential time-gain control (TGC). The PGA enables digital selection of three gain values (15dB, 22dB and 25.5dB). The bandwidth of the lowpass filter is also selectable between 1.85MHz, 510kHz and 195kHz to allow for testing of both architectural frameworks. The entire AFE consumes 7.8 mW and occupies an area of 1.5×1.5 mm. In addition to the AFE, this thesis also presents the design of a pseudodifferential, log-domain multiplier-filter or “multer” which demodulates low-RF signals in the current-domain. This circuit targets high impedance transducers such as capacitive micromachined ultrasound transducers (CMUTs) and offers a 20dB improvement in dynamic range over the voltage-mode AFE. The bandwidth is also electronically tunable. The circuit was implemented in 0.35μm BiCMOS and was simulated in Cadence; however, no fabrication results were obtained for this circuit. B-mode images were obtained for both architectures. The quadrature SAB method yields a higher image SNR and 9% lower root mean squared error with respect to the RF-beamformed reference image than the compressive SAB method. Thus, while both architectures achieve a significant reduction in sampling rate, system complexity and area, the quadrature SAB method achieves better image quality. Future work may involve the addition of multiple receiver channels and the development of an integrated system-on-chip.Open Acces

ZTC BIAS POINT OF ADVANCED FIN BASED DEVICE: THE IMPORTANCE AND EXPLORATION

The present understanding of this work is about to evaluate and resolve the temperature compensation point (TCP) or zero temperature coefficient (ZTC) point for a sub-20 nm FinFET. The sensitivity of geometry parameters on assorted performances of Fin based device and its reliability over ample range of temperatures i.e. 25 0C to 225 0C is reviewed to extend the benchmark of device scalability. The impact of fin height (HFin), fin width (WFin), and temperature (T) on immense performance metrics including on-off ratio (Ion/Ioff), transconductance (gm), gain (AV), cut-off frequency (fT), static power dissipation (PD), energy (E), energy delay product (EDP), and sweet spot (gmfT/ID) of the FinFET is successfully carried out by commercially available TCAD simulator SentaurusTM from Synopsis Inc