Photocathode Quantum Efficiency of Ultra-Thin Cs2Te Layers On Nb Substrates

The quantum efficiencies (QE) of photocathodes consisting of bulk Nb substrates coated with thin films of Cs2Te are reported. Using the standard recipe for Cs2Te deposition developed for Mo substrates (220 {\AA} Te thickness), a QE ~11% - 13% at light wavelength of 248 nm is achieved for the Nb substrates, consistent with that found on Mo. Systematic reduction of the Te thickness for both Mo and Nb substrates reveals a surprisingly high residual QE ~ 6% for a Te layer as thin as 15 {\AA}. A phenomenological model based on the Spicer 3-Step model along with a solution of the Fresnel equations for reflectance, R, leads to a reasonable fit of the thickness dependence of QE and suggests that layers thinner than 15 {\AA} may still have a relatively high QE. Preliminary investigation suggests an increased operational lifetime as well. Such an ultra-thin, semiconducting Cs2Te layer may be expected to produce minimal ohmic losses for RF frequencies ~ 1 GHz. The result thus opens the door to the potential development of a Nb (or Nb3Sn) superconducting photocathode with relatively high QE and minimal RF impedance to be used in a superconducting radiofrequency (SRF) photoinjector.Comment: 12 pages, 3 figure

Femtosecond-laser-irradiation-induced structural organization and crystallinity of Bi2WO6

Controlling the structural organization and crystallinity of functional oxides is key to enhancing their performance in technological applications. In this work, we report a strong enhancement of the structural organization and crystallinity of Bi2WO6 samples synthetized by a microwave-assisted hydrothermal method after exposing them to femtosecond laser irradiation. X-ray difraction, UVvis and Raman spectroscopies, photoluminescence emissions, energy dispersive spectroscopy, feld emission scanning electron microscopy, and transmission electron microscopy were employed to characterize the as-synthetized samples. To complement and rationalize the experimental results, frstprinciples calculations were employed to study the efects of femtosecond laser irradiation. Structural and electronic efects induced by femtosecond laser irradiation enhance the long-range crystallinity while decreasing the free carrier density, as it takes place in the amorphous and liquid states. These efects can be considered a clear cut case of surface-enhanced Raman scattering

Optical properties of graphene antidot lattices

Undoped graphene is semi-metallic and thus not suitable for many electronic and optoelectronic applications requiring gapped semiconductor materials. However, a periodic array of holes (antidot lattice) renders graphene semiconducting with a controllable band gap. Using atomistic modelling, we demonstrate that this artificial nanomaterial is a dipole-allowed direct gap semiconductor with a very pronounced optical absorption edge. Hence, optical infrared spectroscopy should be an ideal probe of the electronic structure. To address realistic experimental situations, we include effects due to disorder and the presence of a substrate in the analysis.Comment: 11 pages, 9 figures, accepted for publication in Phys. Rev.

Electron energy loss and induced photon emission in photonic crystals

The interaction of a fast electron with a photonic crystal is investigated by solving the Maxwell equations exactly for the external field provided by the electron in the presence of the crystal. The energy loss is obtained from the retarding force exerted on the electron by the induced electric field. The features of the energy loss spectra are shown to be related to the photonic band structure of the crystal. Two different regimes are discussed: for small lattice constants $a$ relative to the wavelength of the associated electron excitations $\lambda$, an effective medium theory can be used to describe the material; however, for $a\sim\lambda$ the photonic band structure plays an important role. Special attention is paid to the frequency gap regions in the latter case.Comment: 12 pages, 7 figure

Neural reflectance transformation imaging

Reflectance transformation imaging (RTI) is a computational photography technique widely used in the cultural heritage and material science domains to characterize relieved surfaces. It basically consists of capturing multiple images from a fixed viewpoint with varying lights. Handling the potentially huge amount of information stored in an RTI acquisition that consists typically of 50\u2013100RGB values per pixel, allowing data exchange, interactive visualization, and material analysis, is not easy. The solution used in practical applications consists of creating \u201crelightable images\u201d by approximating the pixel information with a function of the light direction, encoded with a small number of parameters. This encoding allows the estimation of images relighted from novel, arbitrary lights, with a quality that, however, is not always satisfactory. In this paper, we present NeuralRTI, a framework for pixel-based encoding and relighting of RTI data. Using a simple autoencoder architecture, we show that it is possible to obtain a highly compressed representation that better preserves the original information and provides increased quality of virtual images relighted from novel directions, especially in the case of challenging glossy materials. We also address the problem of validating the relight quality on different surfaces, proposing a specific benchmark, SynthRTI, including image collections synthetically created with physical-based rendering and featuring objects with different materials and geometric complexity. On this dataset and as well on a collection of real acquisitions performed on heterogeneous surfaces, we demonstrate the advantages of the proposed relightable image encoding