Ultra Low-Power Frequency Synthesizers for Duty Cycled IoT radios

Internet of Things (IoT), which is one of the main talking points in the electronics industry today, consists of a number of highly miniaturized sensors and actuators which sense the physical environment around us and communicate that information to a central information hub for further processing. This agglomeration of miniaturized sensors helps the system to be deployed in previously impossible arenas such as healthcare (Body Area Networks - BAN), industrial automation, real-time monitoring environmental parameters and so on; thereby greatly improving the quality of life. Since the IoT devices are usually untethered, their energy sources are limited (typically battery powered or energy scavenging) and hence have to consume very low power. Today's IoT systems employ radios that use communication protocols like Bluetooth Smart; which means that they communicate at data rates of a few hundred kb/s to a few Mb/s while consuming around a few mW of power. Even though the power dissipation of these radios have been decreasing steadily over the years, they seem to have reached a lower limit in the recent times. Hence, there is a need to explore other avenues to further reduce this dissipation so as to further improve the energy autonomy of the IoT node. Duty cycling has emerged as a promising alternative in this sense since it involves radios transmitting very short bursts of data at high rates and being asleep the rest of the time. In addition, high data rates proffer the added advantage of reducing network congestion which has become a major problem in IoT owing to the increase in the number of sensor nodes as well as the volume of data they send. But, as the average power (energy) dissipated decreases due to duty cycling, the energy overhead associated with the start-up phase of the radio becomes comparable with the former. Therefore, in order to take full advantage of duty cycling, the radio should be capable of being turned ON/OFF almost instantaneously. Furthermore, the radio of the future should also be able to support easy frequency hopping to improve the system efficiency from an interference point of view. In other words, in addition to high data rate capability, the next generation radios must also be highly agile and have a low energy overhead. All these factors viz. data rate, agility and overhead are mainly dependent on the radio's frequency synthesizer and therefore emphasis needs to be laid on developing new synthesizer architectures which are also amenable to technology scaling. This thesis deals with the evolution of one such all-digital frequency synthesizer; with each step dealing with one of the aforementioned issues. In order to reduce the energy overhead of the synthesizer, FBAR resonators (which are a class of MEMS resonators) are used as the frequency reference instead of a traditional quartz crystal. The FBAR resonators aid the design of fast-startup oscillators as opposed to the long latency associated with the start-up of the crystal oscillator. In addition, the frequency stability of the FBAR lends itself to open-loop architecture which can support very high data rates. Another advantage of the open-loop architecture is the frequency agility which aids easy channel switching for multi-hop architectures, as demonstrated in this thesis

Thin-film piezoelectric-on-substrate resonators and narrowband filters

A new class of micromachined devices called thin-film piezoelectric-on-substrate (TPoS) resonators is introduced, and the performance of these devices in RF and sensor applications is studied. TPoS resonators benefit from high electromechanical coupling of piezoelectric transduction mechanism and superior acoustic properties of a substrate such as single crystal silicon. Therefore, the motional impedance of these resonators are significantly smaller compared to typical capacitively-transduced counterparts while they exhibit relatively high quality factor and power handling and can be operated in air. The combination of all these features suggests TPoS resonators as a viable alternative for current acoustic devices. In this thesis, design and fabrication methods to realize dispersed-frequency lateral-extensional TPoS resonators are discussed. TPoS devices are fabricated on both silicon-on-insulator and thin-film nanocrystalline diamond substrates. The performance of these resonators in simple and low-power oscillators is measured and compared. Furthermore, a unique coupling technique for implementation of high frequency filters is introduced in which dual resonance modes of a single resonant structure are coupled. The measured results of this work show that these filters are suitable candidates for single-chip implementation of multiple-frequency narrow-band filters with high out-of-band rejection in a small footprint.Ph.D.Committee Chair: Farrokh Ayazi; Committee Member: James D. Meindl; Committee Member: John D. Cressler; Committee Member: Nazanin Bassiri-Gharb; Committee Member: Oliver Bran

Multi-channel ultra-low-power receiver architecture for body area networks

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.Cataloged from PDF version of thesis.Includes bibliographical references (p. 85-91).In recently published integrated medical monitoring systems, a common thread is the high power consumption of the radio compared to the other system components. This observation is indicative of a natural place to attempt a reduction in system power. Narrowband receivers in-particular can enjoy significant power reduction by employing high-Q bulk acoustic resonators as channel select filters directly at RF, allowing down-stream analog processing to be simplified, resulting in better energy efficiency. But for communications in the ISM bands, it is important to employ multiple frequency channels to permit frequency-division-multiplexing and provide frequency diversity in the face of narrowband interferers. The high-Q nature of the resonators means that frequency tuning to other channels in the same band is nearly impossible; hence, a new architecture is required to address this challenge. A multi-channel ultra-low power OOK receiver for Body Area Networks (BANs) has been designed and tested. The receiver multiplexes three Film Bulk Acoustic Resonators (FBARs) to provide three channels of frequency discrimination, while at the same time offering competitive sensitivity and superior energy efficiency in this class of BAN receivers. The high-Q parallel resonance of each resonator determines the passband. The resonator's Q is on the order of 1000 and its center frequency is approximately 2.5 GHz, resulting in a -3 dB bandwidth of roughly 2.5 MHz with a very steep rolloff. Channels are selected by enabling the corresponding LNA and mixer pathway with switches, but a key benefit of this architecture is that the switches are not in series with the resonator and do not de-Q the resonance. The measured 1E-3 sensitivity is -64 dBm at 1 Mbps for an energy efficiency of 180 pJ/bit. The resonators are packaged beside the CMOS using wirebonds for the prototype.by Phillip Michel Nadeau.S.M

Performance optimization of lateral-mode thin-film piezoelectric-on-substrate resonant systems

The main focus of this dissertation is to characterize and improve the performance of thin-film piezoelectric-on-substrate (TPoS) lateral-mode resonators and filters. TPoS is a class of piezoelectric MEMS devices which benefits from the high coupling coefficient of the piezoelectric transduction mechanism while taking advantage of superior acoustic properties of a substrate. The use of lateral-mode TPoS designs allows for fabrication of dispersed-frequency filters on a single substrate, thus significantly reducing the size and manufacturing cost of devices. TPoS filters also offer a lower temperature coefficient of frequency, and better power handling capability compared to rival technologies all in a very small footprint. Design and fabrication process of the TPoS devices is discussed. Both silicon and diamond substrates are utilized for fabrication of TPoS devices and results are compared. Specifically, the superior acoustic properties of nanocrystalline diamond in scaling the frequency and energy density of the resonators is highlighted in comparison with silicon. The performance of TPoS devices in a variety of applications is reported. These applications include lateral-mode TPoS filters with record low IL values (as low as 2dB) and fractional bandwidth up to 1%, impedance transformers, very low phase noise oscillators, and passive wireless temperature sensors

Utilisation of microsystems technology in radio frequency and microwave applications

The market trends of the rapidly growing communication systems require new product architectures and services that are only realisable by utilising technologies beyond that of planar integrated circuits. Microsystems technology (MST) is one such technology which can revolutionise radio frequency (RF) and microwave applications. This article discusses the enabling potential of the MST to meet the stringent requirements of modern communication systems. RF MST fabrication technologies and actuation mechanisms empower conventional processes by alleviating the substrate effects on passive devices and provide product designers with high quality versatile microscale components which can facilitate system integration and lead to novel architectures with enhanced robustness and reduced power consumption. An insight on the variety of components that can be fabricated using the MST is given, emphasizing their excellent electrical performance and versatility. Research issues that need to be addressed are also discussed. Finally, this article discusses the main approaches for integrating MST devices in RF and microwave applications together with the difficulties that need to be overcome in order to make such devices readily available for volume-production.peer-reviewe

Thin-film Bulk Acoustic Resonators on Integrated Circuits for Physical Sensing Applications

Merging chemical and biomolecular sensors with silicon integrated circuits has the potential to push complex electronics into a low-cost, portable platform, greatly simplifying system- level instrumentation and extending the reach and functionality of point of use technologies. One such class of sensor, the thin-film bulk acoustic resonator (FBAR), has a micron-scale size and low gigahertz frequency range that is ideally matched with modern complementary metal-oxide-semiconductor (CMOS) technologies. An FBAR sensor can enable label-free detection of analytes in real time, and CMOS integration can overcome the measurement complexity and equipment cost normally required for detection with acoustic resonators. This thesis describes a body of work conducted to integrate an array of FBAR sensors with an active CMOS substrate. A monolithic fabrication method is developed, which allows for FBAR devices to be built directly on the top surface of the CMOS chip through post-processing. A custom substrate is designed and fabricated in 0.18 µm CMOS to support oscillation and frequency measurement for each sensor site in a 6×4 array. The fabrication of 0.8-1.5 GHz FBAR devices is validated for both off-chip and on-chip devices, and the integrated system is characterized for sensitivity and limit of detection. On-chip, parallel measurement of multiple sensors in real time is demonstrated for a quantitative vapor sensing application, and the limit of detection is below 50 ppm. This sensor platform could be used for a broad scope of label-free detection applications in chemistry, biology, and medicine, and it demonstrates potential for enabling a low-cost, point of use instrument

Ferroelectric-on-Silicon Switchable Bulk Acoustic Wave Resonators and Filters for RF Applications.

Todays’ multi-band mobile phones’ RF front ends require separate transceivers for each frequency band. Future wireless mobile devices are expected to accommodate a larger number of frequency bands; therefore using the existing transceiver configurations becomes prohibitive. One of the key RF components in wireless devices is the image reject and band-selection filter. Today’s multi-band mobile phones use bulk acoustic wave (BAW) filters in conjunction with solid-state or MEMS-based RF switches for selecting the frequency band of operation. This approach results in very complex circuits. As number of frequency bands increases, ferroelectric BST, operating at its paraelectric phase, has recently been utilized in designing intrinsically switchable BAW resonators and filters due to its voltage induced piezoelectricity. The intrinsically switchable BAW resonators and filters are suitable for designing compact multiband and frequency agile transceivers as they can be switched on and off by simply controlling the dc bias voltage across the ferroelectric layer instead of using separate MEMS or solid-state based RF switches. In this thesis, composite ferroelectric resonators are studied to improve the Q of intrinsically switchable BAW resonators. Intrinsically switchable BAW resonators with record Q values based on ferroelectric-on-silicon composite structures have been demonstrated. In addition, two types of intrinsically switchable BAW filters using ferroelectric-on-silicon composite structure: electrically connected filters and laterally coupled acoustic filters are studied. In the first part of this thesis, the design, fabrication and measurement results for high-Q composite film bulk acoustic resonators (FBARs) are discussed. Subsequently, an intrinsically switchable electrically connected filter based on ferroelectric-on-silicon composite FBARs is presented. Finally, an intrinsically switchable laterally coupled acoustic filter with a ferroelectric-on-silicon composite structure is presented. The reported laterally coupled acoustic filter represents the first demonstration of a BST based intrinsically switchable acoustically coupled filter.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/107289/1/siss_1.pd

Gallium Nitride Integrated Microsystems for Radio Frequency Applications.

The focus of this work is design, fabrication, and characterization of novel and advanced electro-acoustic devices and integrated micro/nano systems based on Gallium Nitride (GaN). Looking beyond silicon (Si), compound semiconductors, such as GaN have significantly improved the performance of the existing electronic devices, as well as enabled completely novel micro/nano systems. GaN is of particular interest in the “More than Moore” era because it combines the advantages of a wide-band gap semiconductor with strong piezoelectric properties. Popular in optoelectronics, high-power and high-frequency applications, the added piezoelectric feature, extends the research horizons of GaN to diverse scientific and multi-disciplinary fields. In this work, we have incorporated GaN micro-electro-mechanical systems (MEMS) and acoustic resonators to the GaN baseline process and used high electron mobility transistors (HEMTs) to actuate, sense and amplify the acoustic waves based on depletion, piezoelectric, thermal and piezo-resistive mechanisms and achieved resonance frequencies ranging from 100s of MHz up to 10 GHz with frequency×quality factor (f×Q) values as high as 1013. Such high-performance integrated systems can be utilized in radio frequency (RF) and microwave communication and extreme-environment applications.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/135799/1/azadans_1.pd

Lithium niobate RF-MEMS oscillators for IoT, 5G and beyond

This dissertation focuses on the design and implementation of lithium niobate (LiNbO3) radiofrequency microelectromechanical (RF-MEMS) oscillators for internet-of-things (IoT), 5G and beyond. The dissertation focuses on solving two main problems found nowadays in most of the published works: the narrow tuning range and the low operating frequency (sub 3 GHz) acoustic oscillators currently deliver. The work introduced here enables wideband voltage-controlled MEMS oscillators (VCMOs) needed for emerging applications in IoT. Moreover, it enables multi-GHz (above 8 GHz) RF-MEMS oscillators through harnessing over mode resonances for 5G and beyond. LiNbO3 resonators characterized by high-quality factor (Q), high electromechanical coupling (kt2), and high figure-of-merit (FoMRES= Q kt2) are crucial for building the envisioned high-performance oscillators. Those oscillators can be enabled with lower power consumption, wider tuning ranges, and a higher frequency of oscillation when compared to other state-of-the-art (SoA) RF-MEMS oscillators. Tackling the tuning range issue, the first VCMO based on the heterogeneous integration of a high Q LiNbO3 RF-MEMS resonator and complementary metal-oxide semiconductor (CMOS) is demonstrated in this dissertation. A LiNbO3 resonator array with a series resonance of 171.1 MHz, a Q of 410, and a kt2 of 12.7% is adopted, while the TSMC 65 nm RF LP CMOS technology is used to implement the active circuitry with an active area of 220×70 µm2. Frequency tuning of the VCMO is achieved by programming a binary-weighted digital capacitor bank and a varactor that are both connected in series to the resonator. The measured best phase noise performances of the VCMO are -72 and -153 dBc/Hz at 1 kHz and 10 MHz offsets from 178.23 and 175.83 MHz carriers, respectively. The VCMO consumes a direct current (DC) of 60 µA from a 1.2 V supply while realizing a tuning range of 2.4 MHz (~ 1.4% tuning range). Such VCMOs can be applied to enable ultralow-power, low phase noise, and wideband RF synthesis for emerging applications in IoT. Moreover, the first VCMO based on LiNbO3 lateral overtone bulk acoustic resonator (LOBAR) is demonstrated in this dissertation. The LOBAR excites over 30 resonant modes in the range of 100 to 800 MHz with a frequency spacing of 20 MHz. The VCMO consists of a LOBAR in a closed-loop with two amplification stages and a varactor-embedded tunable LC tank. By the bias voltage applied to the varactor, the tank can be tuned to change the closed-loop gain and phase responses of the oscillator so that Barkhausen’s conditions are satisfied for the targeted resonant mode. The tank is designed to allow the proposed VCMO to lock to any of the ten overtones ranging from 300 to 500 MHz. These ten tones are characterized by average Qs of 2100, kt2 of 1.5%, FoMRES of 31.5 enabling low phase noise, and low-power oscillators crucial for IoT. Owing to the high Qs of the LiNbO3 LOBAR, the measured VCMO shows a close-in phase noise of -100 dBc/Hz at 1 kHz offset from a 300 MHz carrier and a noise floor of -153 dBc/Hz while consuming 9 mW. With further optimization, this VCMO can lead to direct RF synthesis for ultra-low-power transceivers in multi-mode IoT nodes. Tackling the multi-GHz operation problem, the first Ku-band RF-MEMS oscillator utilizing a third antisymmetric overtone (A3) in a LiNbO3 resonator is presented in the dissertation. Quarter-wave resonators are used to satisfy Barkhausen’s oscillation conditions for the 3rd overtone while suppressing the fundamental and higher-order resonances. The oscillator achieves measured phase noise of -70 and -111 dBc/Hz at 1 kHz and 100 kHz offsets from a 12.9 GHz carrier while consuming 20 mW of dc power. The oscillator achieves a FoMOSC of 200 dB at 100 kHz offset. The achieved oscillation frequency is the highest reported to date for a MEMS oscillator. In addition, this dissertation introduces the first X-band RF-MEMS oscillator built using CMOS technology. The oscillator consists of an acoustic resonator in a closed loop with cascaded RF tuned amplifiers (TAs) built on TSMC RF GP 65 nm CMOS. The TAs bandpass response, set by on-chip inductors, satisfies Barkhausen's oscillation conditions for A3 only. Two circuit variations are implemented. The first is an 8.6 GHz standalone oscillator with a source-follower buffer for direct 50 Ω-based measurements. The second is an oscillator-divider chain using an on-chip 3-stage divide-by-2 frequency divider for a ~1.1 GHz output. The standalone oscillator achieves measured phase noise of -56, -113, and -135 dBc/Hz at 1 kHz, 100 kHz, and 1 MHz offsets from an 8.6 GHz output while consuming 10.2 mW of dc power. The oscillator also attains a FoMOSC of 201.6 dB at 100 kHz offset, surpassing the SoA electromagnetic (EM) and RF-MEMS based oscillators. The oscillator-divider chain produces a phase noise of -69.4 and -147 dBc/Hz at 1 kHz and 1 MHz offsets from a 1075 MHz output while consuming 12 mW of dc power. Its phase noise performance also surpasses the SoA L-band phase-locked loops (PLLs). The demonstrated performance shows the strong potential of microwave acoustic oscillators for 5G frequency synthesis and beyond. This work will enable low-power 5G transceivers featuring high speed, high sensitivity, and high selectivity in small form factors

Monolithically Integrated Acoustic Resonators on CMOS for Radio-Frequency Circuit Applications

Wireless communication circuits rely on the use of high-quality passive elements (inductor-capacitor resonant tanks) for the implementation of selective filters and high-purity frequency references (oscillators). Typically available CMOS, on-chip passives suffer from high losses, primarily inductors, and consume large areas that cannot be populated by transistors leading to a significant area penalty. Mechanical resonators exhibit significantly lower losses than their electrical counterparts due to the reduced parasitic loss mechanisms in the mechanical domain. Efficient transduction schemes such as the piezoelectric effect allow for simple electrical actuation and read-out of such mechanical resonators. Piezoelectric thin-film bulk acoustic resonators (FBARs) are currently among the most promising and widely used mechanical resonator structures. However, FBARs are currently only available as off-chip components, which must be connected to CMOS circuitry through wire-bonding and flip-chip schemes. The use of off-chip interfaces introduces considerable parasitics and significant limitations on integration density. Monolithic integration with CMOS substrates alleviates interconnect parasitics, increases integration density and allows for area sharing whereby FBARs reside atop active CMOS circuitry. Close integration of FBARs and CMOS transistors can also enable new circuit paradigms, which simultaneously leverage the strengths of both components. Described here, is a body of work conducted to integrate FBAR resonators with active CMOS substrates (180nm and 65nm processes). A monolithic fabrication method is described which allows for FBAR devices to be constructed atop the backend small CMOS dies through low thermal-budget (< 300°C) post-processing. Stand-alone fabricated devices are characterized and the extracted electrical model is used to design two oscillator chips. The chips comprise amplifier circuitry that functions along with the integrated FBARs to achieve oscillation in the 0.8-2 GHz range. The chips also include test structures to assess the performance of the underlying CMOS transistors before and after the resonator post-processing. A successful FBAR-CMOS oscillator is demonstrated in 65nm CMOS along with characterization of FBARs built on CMOS. The approach presented here can be used for experimenting with more complex circuits leveraging the co-integration of piezoelectric resonators and CMOS transistors