Integrated circuit reliability testing

A technique is described for use in determining the reliability of microscopic conductors deposited on an uneven surface of an integrated circuit device. A wafer containing integrated circuit chips is formed with a test area having regions of different heights. At the time the conductors are formed on the chip areas of the wafer, an elongated serpentine assay conductor is deposited on the test area so the assay conductor extends over multiple steps between regions of different heights. Also, a first test conductor is deposited in the test area upon a uniform region of first height, and a second test conductor is deposited in the test area upon a uniform region of second height. The occurrence of high resistances at the steps between regions of different height is indicated by deriving the measured length of the serpentine conductor using the resistance measured between the ends of the serpentine conductor, and comparing that to the design length of the serpentine conductor. The percentage by which the measured length exceeds the design length, at which the integrated circuit will be discarded, depends on the required reliability of the integrated circuit

Reliability analysis of timing channel circuits in a static inverter

Timing channel circuit reliability in static inverte

Integrated circuit reliability testing

A technique is described for use in determining the reliability of microscopic conductors deposited on an uneven surface of an integrated circuit device. A wafer containing integrated circuit chips is formed with a test area having regions of different heights. At the time the conductors are formed on the chip areas of the wafer, an elongated serpentine assay conductor is deposited on the test area so the assay conductor extends over multiple steps between regions of different heights. Also, a first test conductor is deposited in the test area upon a uniform region of first height, and a second test conductor is deposited in the test area upon a uniform region of second height. The occurrence of high resistances at the steps between regions of different height is indicated by deriving the measured length of the serpentine conductor using the resistance measured between the ends of the serpentine conductor, and comparing that to the design length of the serpentine conductor. The percentage by which the measured length exceeds the design length, at which the integrated circuit will be discarded, depends on the required reliability of the integrated circuit

Synthesis for circuit reliability

textElectrical and Computer Engineerin

Management of reliability and maintainability; a disciplined approach to fleet readiness

Material acquisition fundamentals were reviewed and include: mission profile definition, stress analysis, derating criteria, circuit reliability, failure modes, and worst case analysis. Military system reliability was examined with emphasis on the sparing of equipment. The Navy's organizational strategy for 1980 is presented

Design of an Efficient Interconnection Network of Temperature Sensors

Temperature has become a first class design constraint because high temperatures adversely affect circuit reliability, static power and degrade the performance. In this scenario, thermal characterization of ICs and on-chip temperature monitoring represent fundamental tasks in electronic design. In this work, we analyze the features that an interconnection network of temperature sensors must fulfill. Departing from the network topology, we continue with the proposal of a very light-weight network architecture based on digitalization resource sharing. Our proposal supposes a 16% improvement in area and power consumption compared to traditional approache

An Analytical Model for Circuit Reliability Estimation

With the continuous scaling of CMOS technologies, integrated circuits are becoming more sensitive to process variations and/or external factors such as temperature or background noise and, as a result, may operate unreliably. Circuit reliability can, however, be improved by making some design changes, and this requires an efficient and accurate method for evaluation of the reliability during the design stage. Reliability of a circuit can be estimated using either simulation-based or analytical based methods. While simulation-based methods (such as Monte-Carlo Simulation) can produce near to perfect estimated values, it takes a long time to run and the run-time increases exponentially with circuit size. On the other hand, analytical methods are relatively fast, but their accuracy level could decrease significantly if signal correlations are not properly accounted for. In this thesis, a new method for calculating the signal reliability correlation coefficient is presented. The proposed method takes advantage of the local information available in the circuit. It is assumed that all signal probabilities of error-free circuits are already available. The proposed method to calculate the Correlation Coefficient was tested for its efficiency and accuracy by applying it on large circuits in comparison with the results produced by the Monte-Carlo Simulation. For circuits containing thousands of gates, their output reliability and probability can be calculated using the proposed method within minutes, as opposed to over 10 hours using Monte-Carlo Simulation. The average errors are as low as 1.67% when all gate reliability is set at 0.95. Throughout the thesis, various ISCAS85 benchmark circuits have been tested under different conditions such as different gate reliabilities, input signal probability and input signal reliabilities in comparison with Monte-Carlo Simulation in order to verify its validity

Saturn integrated circuit reliability test program Final report, 28 Jun. 1966 - 1 Jul. 1967

Literature survey and test program to study reliability of linear integrated circuit

Study Of Nanoscale Cmos Device And Circuit Reliability

The development of semiconductor technology has led to the significant scaling of the transistor dimensions -The transistor gate length drops down to tens of nanometers and the gate oxide thickness to 1 nm. In the future several years, the deep submicron devices will dominate the semiconductor industry for the high transistor density and the corresponding performance enhancement. For these devices, the reliability issues are the first concern for the commercialization. The major reliability issues caused by voltage and/or temperature stress are gate oxide breakdown (BD), hot carrier effects (HCs), and negative bias temperature instability (NBTI). They become even more important for the nanoscale CMOS devices, because of the high electrical field due to the small device size and high temperature due to the high transistor densities and high-speed performances. This dissertation focuses on the study of voltage and temperature stress-induced reliability issues in nanoscale CMOS devices and circuits. The physical mechanisms for BD, HCs, and NBTI have been presented. A practical and accurate equivalent circuit model for nanoscale devices was employed to simulate the RF performance degradation in circuit level. The parameter measurement and model extraction have been addressed. Furthermore, a methodology was developed to predict the HC, TDDB, and NBTI effects on the RF circuits with the nanoscale CMOS. It provides guidance for the reliability considerations of the RF circuit design. The BD, HC, and NBTI effects on digital gates and RF building blocks with the nanoscale devices low noise amplifier, oscillator, mixer, and power amplifier, have been investigated systematically. The contributions of this dissertation include: It provides a thorough study of the reliability issues caused by voltage and/or temperature stresses on nanoscale devices from device level to circuit level; The more real voltage stress case high frequency (900 MHz) dynamic stress, has been first explored and compared with the traditional DC stress; A simple and practical analytical method to predict RF performance degradation due to voltage stress in the nanoscale devices and RF circuits was given based on the normalized parameter degradations in device models. It provides a quick way for the designers to evaluate the performance degradations; Measurement and model extraction technologies, special for the nanoscale MOSFETs with ultra-thin, ultra-leaky gate oxide, were addressed and employed for the model establishments; Using the present existing computer-aided design tools (Cadence, Agilent ADS) with the developed models for performance degradation evaluation due to voltage or/and temperature stress by simulations provides a potential way that industry could use to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of nanotechnology, and scientists and engineers have been exploring here for years. The reliability is the first challenge for the commercialization of the nanoscale CMOS devices, which will be further downscaling into several tens or ten nanometers. The reliability is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation, from device level to circuit level, provide not only an insight on how the voltage and/or temperature stress effects on the performances, but also methods and guidance for the designers to achieve more reliable circuits with nanoscale MOSFETs in the future

Saturn integrated circuit reliability test program Quarterly progress report, Jul. - Sep. 1966

Saturn integrated circuit reliability tests performed to improve failure mode screenin