Numerical simulations of current generation and dynamo excitation in a mechanically-forced, turbulent flow

The role of turbulence in current generation and self-excitation of magnetic fields has been studied in the geometry of a mechanically driven, spherical dynamo experiment, using a three dimensional numerical computation. A simple impeller model drives a flow which can generate a growing magnetic field, depending upon the magnetic Reynolds number, Rm, and the fluid Reynolds number. When the flow is laminar, the dynamo transition is governed by a simple threshold in Rm, above which a growing magnetic eigenmode is observed. The eigenmode is primarily a dipole field tranverse to axis of symmetry of the flow. In saturation the Lorentz force slows the flow such that the magnetic eigenmode becomes marginally stable. For turbulent flow, the dynamo eigenmode is suppressed. The mechanism of suppression is due to a combination of a time varying large-scale field and the presence of fluctuation driven currents which effectively enhance the magnetic diffusivity. For higher Rm a dynamo reappears, however the structure of the magnetic field is often different from the laminar dynamo; it is dominated by a dipolar magnetic field which is aligned with the axis of symmetry of the mean-flow, apparently generated by fluctuation-driven currents. The fluctuation-driven currents have been studied by applying a weak magnetic field to laminar and turbulent flows. The magnetic fields generated by the fluctuations are significant: a dipole moment aligned with the symmetry axis of the mean-flow is generated similar to those observed in the experiment, and both toroidal and poloidal flux expulsion are observed.Comment: 14 pages, 14 figure

Reliable SPICE Simulations of Memristors, Memcapacitors and Meminductors

Memory circuit elements, namely memristive, memcapacitive and meminductive systems, are gaining considerable attention due to their ubiquity and use in diverse areas of science and technology. Their modeling within the most widely used environment, SPICE, is thus critical to make substantial progress in the design and analysis of complex circuits. Here, we present a collection of models of different memory circuit elements and provide a methodology for their accurate and reliable modeling in the SPICE environment. We also provide codes of these models written in the most popular SPICE versions (PSpice, LTspice, HSPICE) for the benefit of the reader. We expect this to be of great value to the growing community of scientists interested in the wide range of applications of memory circuit elements

High Lundquist Number Simulations of Parker\u27s Model of Coronal Heating: Scaling and Current Sheet Statistics Using Heterogeneous Computing Architectures

Parker\u27s model [Parker, Astrophys. J., 174, 499 (1972)] is one of the most discussed mechanisms for coronal heating and has generated much debate. We have recently obtained new scaling results for a 2D version of this problem suggesting that the heating rate becomes independent of resistivity in a statistical steady state [Ng and Bhattacharjee, Astrophys. J., 675, 899 (2008)]. Our numerical work has now been extended to 3D using high resolution MHD numerical simulations. Random photospheric footpoint motion is applied for a time much longer than the correlation time of the motion to obtain converged average coronal heating rates. Simulations are done for different values of the Lundquist number to determine scaling. In the high-Lundquist number limit (S \u3e 1000), the coronal heating rate obtained is consistent with a trend that is independent of the Lundquist number, as predicted by previous analysis and 2D simulations. We will present scaling analysis showing that when the dissipation time is comparable or larger than the correlation time of the random footpoint motion, the heating rate tends to become independent of Lundquist number, and that the magnetic energy production is also reduced significantly. We also present a comprehensive reprogramming of our simulation code to run on NVidia graphics processing units using the Compute Unified Device Architecture (CUDA) and report code performance on several large scale heterogenous machines

STICAP: A linear circuit analysis program with stiff systems capability. Volume 1: Theory manual

STICAP (Stiff Circuit Analysis Program) is a FORTRAN 4 computer program written for the CDC-6400-6600 computer series and SCOPE 3.0 operating system. It provides the circuit analyst a tool for automatically computing the transient responses and frequency responses of large linear time invariant networks, both stiff and nonstiff (algorithms and numerical integration techniques are described). The circuit description and user's program input language is engineer-oriented, making simple the task of using the program. Engineering theories underlying STICAP are examined. A user's manual is included which explains user interaction with the program and gives results of typical circuit design applications. Also, the program structure from a systems programmer's viewpoint is depicted and flow charts and other software documentation are given

Development of 3D electromagnetic modeling tools for airborne vehicles

The main goal of this report is to advance the development of methodologies for scattering by airborne composite vehicles. Although the primary focus continues to be the development of a general purpose computer code for analyzing the entire structure as a single unit, a number of other tasks are also being pursued in parallel with this effort. One of these tasks discussed within is on new finite element formulations and mesh termination schemes. The goal here is to decrease computation time while retaining accuracy and geometric adaptability.The second task focuses on the application of wavelets to electromagnetics. Wavelet transformations are shown to be able to reduce a full matrix to a band matrix, thereby reducing the solutions memory requirements. Included within this document are two separate papers on finite element formulations and wavelets

RESISTIVE SWITCHING CHARACTERISTICS OF NANOSTRUCTURED AND SOLUTION-PROCESSED COMPLEX OXIDE ASSEMBLIES

Miniaturization of conventional nonvolatile (NVM) memory devices is rapidly approaching the physical limitations of the constituent materials. An emerging random access memory (RAM), nanoscale resistive RAM (RRAM), has the potential to replace conventional nonvolatile memory and could foster novel type of computing due to its fast switching speed, high scalability, and low power consumption. RRAM, or memristors, represent a class of two terminal devices comprising an insulating layer, such as a metal oxide, sandwiched between two terminal electrodes that exhibits two or more distinct resistance states that depend on the history of the applied bias. While the sudden resistance reduction into a conductive state in metal oxide insulators has been known for almost 50 years, the fundamental resistive switching mechanism is a complex phenomenon that is still long-debated, complex process. Further improvements to existing memristor performance require a complete understanding of memristive properties under various operation conditions. Additional technical issues also remain, such as the development of facile, low-cost fabrication methods as an alternative to expensive, ultra-high vacuum (UHV) deposition methods. This collection of work explores resistive switching within metal oxide-based memristive material assemblies by analyzing the fundamental physical insulating material properties. Chapter 3 aims to translate the utility and simplicity of the highly ordered anodic aluminum oxide (AAO) template structure to complex, yet more functional (memristive) materials. Functional oxides possessing ordered, scalable nanoporous arrays and nanocapacitor arrays over a large area is of interest to both the fields of next-generation electronics and energy storing/harvesting devices. Here their switching performance will be evaluated using conductive atomic force microscopy (C-AFM). Chapter 4 demonstrates a convective self-assembly fabrication method that effectively enables the synthesis of a low-cost solution processed memristor comprising binary oxide and perovskite ABO3 nanocrystals of varying diameter. Chapter 5 systematically compares the influence of inter-nanoparticle distance on the threshold switching SET voltage of hafnium oxide (HfO2) memristors. Utilizing shorter phosphonic acid ligands with higher binding affinity on the nanocrystal surface enabled a record-low SET voltage to be achieved. Chapter 6 extends the scope to the fine tuning of solution processed memristors with two types of perovskites nanocrystals. The primary advantage of nanocrystal memristors is the ability to draw from additional degrees of freedom by tuning the constituent nanocrystal material properties. Recent advancement of solution phase techniques enables a high degree of controllability over the nanocrystal size and structure. Thus, this work found in this dissertation aims to understand and decouple the effects of the geometric size and substitutional nanocrystal parameters on resistive switching

Research status and prospect of graphene materials in aviation

Among various 2D materials, graphene has received extensive research attention in the past 2-30 years due to its fascinating properties. The discovery of graphene has provided a huge boost and a new dimension to materials research and nanotechnology. Many lightweight materials with good performance have been widely used in the aviation field, which has greatly promoted the development of military and civilian industries and promoted technological innovation. Based on the introduction of the structure and properties of graphene, this paper summarizes the application value of graphene in the aerospace field in three aspects: energy equipment, sensors, and composite materials used outside aircraft.Comment: (22 pages, 23 figures