Design and practical realization of polymorphic crosstalk circuits using 65nm TSMC PDK

Title from PDF of title page viewed January 14, 2020Thesis advisor: Mostafizur RahmanVitaIncludes bibliographical references (page 54-56)Thesis (M.S.)--School of Computing and Engineering. University of Missouri--Kansas City. 2019As the technology node scales down, the coupling capacitance between the adjacent metal lines increases. With an increase in this electrostatic coupling, the unwanted signal interference also increases, which is popularly called as Crosstalk. In conventional circuits, the Crosstalk affects either functionality or performance or both. Therefore the Crosstalk is always considered as detrimental to the circuits, and we always try to filter out the Crosstalk noise from signals. Crosstalk Computing Technology tries to astutely turn this unwanted coupling capacitance into computing principle for digital logic gates[1, 2]. The special feature of the crosstalk circuits is its inherent circuit mechanism to build polymorphic logic gates[3]. Our team has previously demonstrated various fundamental polymorphic logic circuits [1-6,16-18]. This thesis shows the design of the large-scale polymorphic crosstalk circuits such as Multiplier–Sorter, Multiplier–Sorter–Adder using the fundamental polymorphic gates, and also analyzes the Power, Performance, and Area (PPA) for these large-scale designs. Similar to the basic and complex polymorphic gates, the functionality of the large-scale polymorphic circuits can also be altered using the control signals. Owing to their multi-functional embodiment in a single circuit, polymorphic circuits find a myriad of useful applications such as reconfigurable system design, resource sharing, hardware security, and fault-tolerant circuit design, etc. [3]. Also, in this thesis, a lot of studies have been done on the variability (PVT analysis) of Crosstalk Circuits. This PVT variation analysis establishes the circuit design requirements in terms of coupling capacitances and fan-in limitation that allows reliable operation of the Crosstalk gates under Process, Voltage and Temperature variations. As an example, I also elaborate on the reason for which the full adder can’t be implemented as a single gate in the crosstalk circuit-style at lower technology nodes. Though we designed a variety of basic and complex logic gates and crosstalk polymorphic gates, the biggest question is “Will these crosstalk gates work reliably on silicon owing to their new circuit requirements and technological challenges?”. Trying to answer the above question, the whole thesis is mainly focused on the physical implementation of the crosstalk gates at 65nm. I will detail the steps that we have performed while designing the crosstalk circuits and their layouts, the challenges we faced while implementing the new circuit techniques using conventional design approaches and PDK, and their solutions, specifically during layout design and verification. The other potential application of crosstalk circuits is in non-linear analog circuits: Analog-to-Digital Converter (ADC) [4], Digital-to-Analog Converter (DAC), and Comparator. In this thesis, I have shown how the deterministic charge summation principle that is used in digital crosstalk gates can also be used to implement the non-linear analog circuits.Introduction -- Polymorphic Crosstalk circuit design -- Practical realization of Crosstalk circuits -- PVT variation analysis -- Difficulties or errors in layout design and full chip details -- Potential miscellaneous applications -- Conclusion and future wor

Noise-based logic: Binary, multi-valued, or fuzzy, with optional superposition of logic states

A new type of deterministic (non-probabilistic) computer logic system inspired by the stochasticity of brain signals is shown. The distinct values are represented by independent stochastic processes: independent voltage (or current) noises. The orthogonality of these processes provides a natural way to construct binary or multi-valued logic circuitry with arbitrary number N of logic values by using analog circuitry. Moreover, the logic values on a single wire can be made a (weighted) superposition of the N distinct logic values. Fuzzy logic is also naturally represented by a two-component superposition within the binary case (N=2). Error propagation and accumulation are suppressed. Other relevant advantages are reduced energy dissipation and leakage current problems, and robustness against circuit noise and background noises such as 1/f, Johnson, shot and crosstalk noise. Variability problems are also nonexistent because the logic value is an AC signal. A similar logic system can be built with orthogonal sinusoidal signals (different frequency or orthogonal phase) however that has an extra 1/N type slowdown compared to the noise-based logic system with increasing number of N furthermore it is less robust against time delay effects than the noise-based counterpart.Comment: Accepted for publication by Physics Letters A, on December 23, 200

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Via-configurable transistors array: a regular design technique to improve ICs yield

Process variations are a major bottleneck for digital CMOS integrated circuits manufacturability and yield. That is why regular techniques with different degrees of regularity are emerging as possible solutions. Our proposal is a new regular layout design technique called Via-Configurable Transistors Array (VCTA) that pushes to the limit circuit layout regularity for devices and interconnects in order to maximize regularity benefits. VCTA is predicted to perform worse than the Standard Cell approach designs for a certain technology node but it will allow the use of a future technology on an earlier time. Our objective is to optimize VCTA for it to be comparable to the Standard Cell design in an older technology. Simulations for the first unoptimized version of our VCTA of delay and energy consumption for a Full Adder circuit in the 90 nm technology node are presented and also the extrapolation for Carry-Ripple Adders from 4 bits to 64 bits.Peer ReviewedPostprint (published version

Statistical circuit simulations - from ‘atomistic’ compact models to statistical standard cell characterisation

This thesis describes the development and application of statistical circuit simulation methodologies to analyse digital circuits subject to intrinsic parameter fluctuations. The specific nature of intrinsic parameter fluctuations are discussed, and we explain the crucial importance to the semiconductor industry of developing design tools which accurately account for their effects. Current work in the area is reviewed, and three important factors are made clear: any statistical circuit simulation methodology must be based on physically correct, predictive models of device variability; the statistical compact models describing device operation must be characterised for accurate transient analysis of circuits; analysis must be carried out on realistic circuit components. Improving on previous efforts in the field, we posit a statistical circuit simulation methodology which accounts for all three of these factors. The established 3-D Glasgow atomistic simulator is employed to predict electrical characteristics for devices aimed at digital circuit applications, with gate lengths from 35 nm to 13 nm. Using these electrical characteristics, extraction of BSIM4 compact models is carried out and their accuracy in performing transient analysis using SPICE is validated against well characterised mixed-mode TCAD simulation results for 35 nm devices. Static d.c. simulations are performed to test the methodology, and a useful analytic model to predict hard logic fault limitations on CMOS supply voltage scaling is derived as part of this work. Using our toolset, the effect of statistical variability introduced by random discrete dopants on the dynamic behaviour of inverters is studied in detail. As devices scaled, dynamic noise margin variation of an inverter is increased and higher output load or input slew rate improves the noise margins and its variation. Intrinsic delay variation based on CV/I delay metric is also compared using ION and IEFF definitions where the best estimate is obtained when considering ION and input transition time variations. Critical delay distribution of a path is also investigated where it is shown non-Gaussian. Finally, the impact of the cell input slew rate definition on the accuracy of the inverter cell timing characterisation in NLDM format is investigated

A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits