Indium-Gallium Segregation in CuInx_{x}Ga1−x_{1-x}Se2_2: An ab initio based Monte Carlo Study

Thin-film solar cells with CuIn$_x$Ga$_{1-x}$Se$_2$ (CIGS) absorber are still far below their efficiency limit, although lab cells reach already 19.9%. One important aspect is the homogeneity of the alloy. Large-scale simulations combining Monte Carlo and density functional calculations show that two phases coexist in thermal equilibrium below room temperature. Only at higher temperatures, CIGS becomes more and more a homogeneous alloy. A larger degree of inhomogeneity for Ga-rich CIGS persists over a wide temperature range, which may contribute to the low observed efficiency of Ga-rich CIGS solar cells

Mechanochemically Synthesized CIGS Nanocrystalline Powder for Solar Cell Application

Copper Indium Gallium Diselenide (CIGS) is a compound semiconductor material from the group of I-III-VI. The material is a solid solution of copper, indium and selenium (CIS) and copper, gallium and selenium with an empirical formula of CuIn(1 – x)GaxSe2, where 0 x 1. CIGS has an exceptionally high absorption coefficient of more than 105 cm – 1 for 1.5 eV. Solar cells prepared from absorber layers of CIGS materials have shown an efficiency higher than 20 %. CuIn(1 – x)GaxSe2 (x 0.3) nanocrystalline compound was mechanochemically synthesized by high-energy milling in a planetary ball mill. The phase identification and crystallite size of milled powders at different time intervals were carried out by X-ray diffraction (XRD). The XRD analysis indicates chalcopyrite structure and the crystallite size of about 10 nm of high-energy milled CIGS powder after two and half hours of milling. An attempt for preparing the thin film from CIGS nanocrystalline powder was carried out using the flash evaporation technique. Scanning electron microscopy (SEM) reveals uniform distribution of CIGS particles in thin film. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3100

Influence of an Sb doping layer in CIGS thin-film solar cells: a photoluminescence study

Sb doping of Cu(In,Ga)Se2 (CIGS) solar cells has been reported to exhibit a positive effect on the morphology of the absorber layer, offering a possibility to lower manufacturing cost by lowering the annealing temperatures during the CIGS deposition. In this work electron microscopy, energy-dispersive x-ray spectroscopy and photoluminescence experiments have been performed on cells deposited on soda-lime glass substrates, adding a thin Sb layer onto the Mo back contact prior to the CIGS absorber deposition. The defect structure of CIGS solar cells doped with Sb in this way has been investigated and is compared with that of undoped reference cells. The influence of substrate temperature during absorber growth has also been evaluated. For all samples the photoluminescence results can be explained by considering three donor–acceptor pair recombination processes involving the same defect pairs

Monolithic CIGS-Perovskite Tandem Cell for an Optimal Light Harvesting Without Current Matching

We present a novel monolithic architecture for optimal light harvesting in multijunction thin film solar cells. In the configuration we consider, formed by a perovskite (PVK) cell overlying a CIGS cell, the current extracted from the two different junctions is decoupled by the insertion of a dielectric nonperiodic photonic multilayer structure. This photonic multilayer is designed by an inverse integration approach to confine the incident sunlight above the PVK band gap in the PVK absorber layer, while increasing the transparency for sunlight below the PVK band gap for an efficient coupling into the CIGS bottom cell. To match the maximum power point voltages in a parallel connection of the PVK and CIGS cells, the latter is divided into two subcells by means of a standard three-laser scribing connection. Using realistic parameters for all the layers in the multijunction architecture we predict power conversion efficiencies of 28%. This represents an improvement of 24% and 26% over the best CIGS and PVK single-junction cells, respectively, while at the same time outperforms the corresponding current-matched standard tandem configuration by more than two percentage points.Peer ReviewedPostprint (author's final draft

Effect of mechanical compression on Cu(In,Ga)Se films : micro-structural and photoluminescence analysis

Cu(In,Ga)Se (CIGS) thin films were deposited by a two-step process on Mo-coated soda-lime glass substrates. The CuInGa (CIG) precursors were prepared in an in-line evaporation system at room temperature, and then selenised at 500 °C. The two-step processed CIGS films were mechanically compressed at 25 MPa to improve their optoelectronic properties, which were verified by photoluminescence (PL). The surface and structural properties were compared before and after compression. The mechanical compression has brought changes in the surface morphology and porosity without changing the structural properties of the material. The PL technique has been used to reveal changes in the electronic properties of the films. PL spectra at different excitation laser powers and temperatures were measured for as-grown as well as compressed samples. The PL spectra of the as-grown films revealed three broad and intense bands shifting at a significant rate towards higher energies (j-shift) with the increase in excitation power suggesting that the material is highly doped and compensated. At increasing temperature, the bands shift towards lower energies, which is a characteristic of the band tails generated by spatial potential fluctuation. The compression increases the intensity of energy bands by an order of magnitude and reduces the j-shift, demonstrating an improvement of the electronic properties

Short-term performance variations of different photovoltaic system technologies under the humid subtropical climate of Kanpur in India

The study discusses the short-term performance variations of grid-connected photovoltaic (PV) systems installed in Kanpur, India. The analysis presents a holistic view of the performance variations of three PV array technologies [multi-crystalline (multi-Si), copper indium gallium diselenide and amorphous silicon] and two inverter types (high-frequency transformer and low-frequency transformer). The analysis considers the DC–AC conversion efficiency of the inverter, system performance through performance ratio (PR) calculations, energy variations between fixed and tracking systems and the comparison between calculated and simulated data for the examined period. The energy output difference between the tracking and fixed systems of the same PV technology show that these are dependent on differences in temperature coefficient, shading and other system related issues. The PR analysis shows the effect of temperature on the multi-Si system. The difference between the simulated and measured values of the systems was mostly attributed to the irradiance differences. Regarding the inverter evaluation, the results showed that both inverter types underperformed in terms of the conversion efficiency compared with nameplate values