A High-Temperature, High-Voltage SOI Gate Driver Integrated Circuit with High Drive Current for Silicon Carbide Power Switches

High-temperature integrated circuit (IC) design is one of the new frontiers in microelectronics that can significantly improve the performance of the electrical systems in extreme environment applications, including automotive, aerospace, well-logging, geothermal, and nuclear. Power modules (DC-DC converters, inverters, etc.) are key components in these electrical systems. Power-to-volume and power-to-weight ratios of these modules can be significantly improved by employing silicon carbide (SiC) based power switches which are capable of operating at much higher temperature than silicon (Si) and gallium arsenide (GaAs) based conventional devices. For successful realization of such high-temperature power electronic circuits, associated control electronics also need to perform at high temperature. In any power converter, gate driver circuit performs as the interface between a low-power microcontroller and the semiconductor power switches. This dissertation presents design, implementation, and measurement results of a silicon-on-insulator (SOI) based high-temperature (\u3e200 _C) and high-voltage (\u3e30 V) universal gate driver integrated circuit with high drive current (\u3e3 A) for SiC power switches. This mixed signal IC has primarily been designed for automotive applications where the under-hood temperature can reach 200 _C. Prototype driver circuits have been designed and implemented in a Bipolar-CMOS- DMOS (BCD) on SOI process and have been successfully tested up to 200 _C ambient temperature driving SiC switches (MOSFET and JFET) without any heat sink and thermal management. This circuit can generate 30V peak-to-peak gate drive signal and can source and sink 3A peak drive current. Temperature compensating and temperature independent design techniques are employed to design the critical functional units like dead-time controller and level shifters in the driver circuit. Chip-level layout techniques are employed to enhance the reliability of the circuit at high temperature. High-temperature test boards have been developed to test the prototype ICs. An ultra low power on-chip temperature sensor circuit has also been designed and integrated into the gate-driver die to safeguard the driver circuit against excessive die temperature (_ 220 _C). This new temperature monitoring approach utilizes a reverse biased p-n junction diode as the temperature sensing element. Power consumption of this sensor circuit is less than 10 uW at 200 _C

Spatially Resolved Event-Driven 24 × 24 Pixels SPAD Imager with 100% Duty Cycle for Low Optical Power Quantum Entanglement Detection

Quantum microscopy requires efficient detectors able to identify temporal correlations among photons. Photon coincidences are usually detected by postprocessing their timestamps measured by means of time-To-digital converters (TDCs), through a time and power-consuming procedure, which impairs the overall system performance. In this article, we propose an innovative single-photon sensitive imager based on single-photon avalanche diodes (SPADs), able to signal coincident photon pairs along with their position through a TDC-free, event-driven architecture. The result is a highly efficient detector (25.8%) with a 100% duty cycle and minimized data throughput. The modular architecture and the 330 ns readout time, independent of pixel number, pave the way to large format imagers based on the same paradigm. The detector enabled quantum imaging at extremely low, microwatt-level optical pump powers, four orders of magnitude lower than previous experiments with similar optical setups

Design, Characterization and Analysis of Component Level Electrostatic Discharge (ESD) Protection Solutions

Electrostatic Discharges (ESD) is a significant hazard to electronic components and systems. Based on a specific process technology, a given circuit application requires a customized ESD consideration that meets all the requirements such as the core circuit\u27s operating condition, maximum accepted leakage current, breakdown conditions for the process and overall device sizes. In every several years, there will be a new process technology becomes mature, and most of those new technology requires custom design of effective ESD protection solution. And usually the design window will shrinks due to the evolving of the technology becomes smaller and smaller. The ESD related failure is a major IC reliability concern and results in a loss of millions dollars each year in the semiconductor industry. To emulate the real word stress condition, several ESD stress models and test methods have been developed. The basic ESD models are Human Body model (HBM), Machine Mode (MM), and Charge Device Model (CDM). For the system-level ESD robustness, it is defined by different standards and specifications than component-level ESD requirements. International Electrotechnical Commission (IEC) 61000-4-2 has been used for the product and the Human Metal Model (HMM) has been used for the system at the wafer level. Increasingly stringent design specifications are forcing original equipment manufacturers (OEMs) to minimize the number of off-chip components. This is the case in emerging multifunction mobile, industrial, automotive and healthcare applications. It requires a high level of ESD robustness and the integrated circuit (IC) level, while finding ways to streamline the ESD characterization during early development cycle. To enable predicting the ESD performance of IC\u27s pins that are directly exposed to a system-level stress condition, a new the human metal model (HMM) test model has been introduced. In this work, a new testing methodology for product-level HMM characterization is introduced. This testing framework allows for consistently identifying ESD-induced failures in a product, substantially simplifying the testing process, and significantly reducing the product evaluation time during development cycle. It helps eliminates the potential inaccuracy provided by the conventional characterization methodology. For verification purposes, this method has been applied to detect the failures of two different products. Addition to the exploration of new characterization methodology that provides better accuracy, we also have looked into the protection devices itself. ICs for emerging high performance precision data acquisition and transceivers in industrial, automotive and wireless infrastructure applications require effective and ESD protection solutions. These circuits, with relatively high operating voltages at the Input/Output (I/O) pins, are increasingly being designed in low voltage Complementary Metal-Oxide-Semiconductor (CMOS) technologies to meet the requirements of low cost and large scale integration. A new dual-polarity SCR optimized for high bidirectional blocking voltages, high trigger current and low capacitance is realized in a sub 3-V, 180-nm CMOS process. This ESD device is designed for a specific application where the operating voltage at the I/O is larger than that of the core circuit. For instance, protecting high voltage swing I/Os in CMOS data acquisition system (DAS) applications. In this reference application, an array of thin film resistors voltage divider is directly connected to the interface pin, reducing the maximum voltage that is obtained at the core device input down to ± 1-5 V. Its ESD characteristics, including the trigger voltage and failure current, are compared against those of a typical CMOS-based SCR. Then, we have looked into the ESD protection designs into more advanced technology, the 28-nm CMOS. An ESD protection design builds on the multiple discharge-paths ESD cell concept and focuses the attention on the detailed design, optimization and realization of the in-situ ESD protection cell for IO pins with variable operation voltages. By introducing different device configurations fabricated in a 28-nm CMOS process, a greater flexibility in the design options and design trade-offs can be obtained in the proposed topology, thus achieving a higher integration and smaller cell size definition for multi-voltage compatibility interface ESD protection applications. This device is optimized for low capacitance and synthesized with the circuit IO components for in-situ ESD protection in communication interface applications developed in a 28-nm, high-k, and metal-gate CMOS technology. ESD devices have been used in different types of applications and also at different environment conditions, such as high temperature. At the last section of this research work, we have performed an investigation of several different ESD devices\u27 performance under various temperature conditions. And it has been shown that the variations of the device structure can results different ESD performance, and some devices can be used at the high temperature and some cannot. And this investigation also brings up a potential threat to the current ESD protection devices that they might be very vulnerable to the latch-up issue at the higher temperature range

Design, Simulation and Characterization of Novel Electrostatic Discharge Protection Devices and Circuits in Advanced Silicon Technologies

Electrostatic Discharge (ESD) has been one of the major reliability concerns in the advanced silicon technologies and it becomes more important with technology scaling. It has been reported that more than 35% of the failures in integrated circuits (ICs) are ESD induced. ESD event is a phenomenon that a finite amount of charges transfer between two objects with different potential in a quite short time. Such event contains a large energy and the ICs without proper ESD protection could be destroyed easily, so ESD protection solutions are essential to semiconductor industry. ESD protection design consists of on-chip and off-chip ESD protection design, and the research works in this dissertation are all conducted in on-chip level, which incorporate the ESD protection devices and circuits into the microchip, to provide with basic ESD protection from manufacturing to customer use. The basic idea of ESD protection design is to provide a path with low impedance which directs most of the ESD current to flow through itself instead of the core circuit, and the ESD protection path must be robust enough to make sure that it does not fail before the core circuit. In this way, proper design on protection devices and circuits should be considered carefully. To assist the understanding and design of ESD protection, the ESD event in real world has been classified into a few ESD model including Human Body Model (HBM), Machine Model (MM), Charged Device Model (CDM), etc. Some mainstream testing method and industry standard are also introduced, including Transmission Line Pulse (TLP), and IEC 61000-4-2. ESD protection devices including diode, Gate-Grounded N-type MOSFET (GGNMOS), Silicon Controlled Rectifier (SCR) are basic elements for ESD protection design. In this dissertation, the device characteristics in ESD event and their applications are introduced. From the perspective of the whole chip ESD protection design, the concept of circuit level ESD protection and the ESD clamps are also briefly introduced. Technology Computer Aided Design (TCAD) and Simulation Program with Integrated Circuit Emphasis (SPICE) simulation is widely used in ESD protection design. In this dissertation, TCAD and SPICE simulation are carried out for a few times for both of pre-tapeout evaluation on characteristics of the proposed device and circuit and post-tapeout analysis on structure operating mechanism. Automotive electronics has been a popular subject in semiconductor industry, and due to the special requirement of the automotive applications like the capacitive pins, the ESD protection device used in such applications need to be specially designed. In this dissertation, a few SCRs without snapback are discussed in detail. To avoid core circuit damages caused the displacement current induced by the large snapback in conventional SCR, an eliminated/minimized snapback is preferred in a selection of the protection device. Two novel SCRs are proposed for High Voltage (HV), Medium Voltage (MV), and Low Voltage (LV) automotive ESD protection. The typical operating temperature for ICs is up to 125°C, however in automotive applications, the operating temperature may extend up to 850°C. In this way, the characteristics of the ESD protection device under the elevated temperatures will be an essential part to investigate for automotive ESD protection design. In this dissertation, the high temperature characteristics of ESD protection devices including diode and a few SCRs is measured and discussed in detail. TCAD simulation are also conducted to explain the underlying physical mechanism. This work provides with a useful insight and information to ESD protection design in high temperature applications. Besides the high temperature environment, ESD protection are also highly needed for electronics working in other extreme environment like the space. Space is an environment that contains kinds of radiation source and at the same time can generate abundant ESD. The ESD adhering to the space systems could be a potential threat to the space electronics. At the same time, the characteristics of the ESD protection part especially the basic protection device used in the space electronics could be influenced after the irradiation in the space. Therefore, the investigation of the radiation effects on ESD protection devices are necessary. In this dissertation, the total ionizing dose (TID) effects on ESD protection devices are investigated. The devices are irradiated with 1.5 MeV He+ and characterized with TLP tester. The pre- and post-irradiation characteristics are compared and the variation on key ESD parameters are analyzed and discussed. This work offers a useful insight on ESD devices\u27 operation under TID and help with the device designing on ESD protection devices for space electronics. Single ESD protection devices are essential part constructing the ESD protection network, however the optimization on ESD clamp circuit design is also important on building an efficient whole chip ESD protection network. In this dissertation, the design and simulation of a novel voltage triggered ESD detection circuit are introduced. The voltage triggered ESD detection circuit is proposed in a 0.18 um CMOS technology. Comparing with the conventional RC based detection circuit, the proposed circuit realizes a higher triggering efficiency with a much smaller footprint, and is immune to false triggering under fast power-up events. The proposed circuit has a better sensitivity to ESD event and is more reliable in ESD protection applications. The leakage current has been a concern with the scaling down of the thickness of the gate oxide. Therefore, a proper design of the ESD clamp for power rail ESD protection need to be specially considered. In this dissertation, a design of a novel ESD clamp with low leakage current is analyzed. The proposed clamp realized a pretty low leakage current up to 12 nA, and has a smaller footprint than conventional design. It also has a long hold-on time under ESD event and a quick turn-off mechanism for false triggering. SPICE simulation is carried out to evaluate the operation of the proposed ESD clamp

Design and Implementation of a High Temperature Fully-Integrated BCD-on-SOI Under Voltage Lock Out Circuit

As concern about the environment has grown in recent years, alternatives in the automotive industry have become an important topic for researchers. One alternative being considered is electric vehicles, which utilize electric motors. DC/AC inverters and DC/DC power converters control these electric motors. A logic circuit is needed to power these converters; however, the logic generators inherently operate at a voltage too low to power the motors. A device known as the gate driver is the interface between the logic generators (or microcontroller) and the power devices (power converter). The gate driver provides the power needed to drive the power devices. Circuits are susceptible to voltage and temperature changes though. For this reason, protection circuits must be implemented as an integral part of the gate driver circuits. The Under Voltage Lock Out (UVLO) circuit provides important detection of under voltage conditions in the power supply thus preventing malfunctions. There are multiple power supplies in the gate driver circuit, and it is important to monitor all of these supplies for both surges and reductions in power. If the power supply should drop below the threshold (nominally 80%) there could be issues in the gate driver’s functionality. Since the gate driver will be located under the hood of a hybrid electric vehicles, operating temperatures can reach extremely high values. For this reason, circuit designs must provide reliable operation of the circuits in an extreme environment

Hybrid monolithic integration of high-power DC-DC converters in a high-voltage technology

The supply of electrical energy to home, commercial, and industrial users has become ubiquitous, and it is hard to imagine a world without the facilities provided by electrical energy. Despite the ever increasing efficiency of nearly every electrical application, the worldwide demand for electrical power continues to increase, since the number of users and applications more than compensates for these technological improvements. In order to maintain the affordability and feasibility of the total production, it is essential for the distribution of the produced electrical energy to be as efficient as possible. In other words the loss in the power distribution is to be minimized. By transporting electrical energy at the maximum safe voltage, the current in the conductors, and the associated conduction loss can remain as low as possible. In order to optimize the total efficiency, the high transportation voltage needs to be converted to the appropriate lower voltage as close as possible to the end user. Obviously, this conversion also needs to be as efficient, affordable, and compact as possible. Because of the ever increasing integration of electronic systems, where more and more functionality is combined in monolithically integrated circuits, the cost, the power consumption, and the size of these electronic systems can be greatly reduced. This thorough integration is not limited to the electronic systems that are the end users of the electrical energy, but can also be applied to the power conversion itself. In most modern applications, the voltage conversion is implemented as a switching DC-DC converter, in which electrical energy is temporarily stored in reactive elements, i.e. inductors or capacitors. High switching speeds are used to allow for a compact and efficient implementation. For low power levels, typically below 1 Watt, it is possible to monolithically implement the voltage conversion on an integrated circuit. In some cases, this is even done on the same integrated circuit that is the end user of the electrical energy to minimize the system dimensions. For higher power levels, it is no longer feasible to achieve the desired efficiency with monolithically integrated components, and some external components prove indispensable. Usually, the reactive components are the main limiting factor, and are the first components to be moved away from the integrated circuit for increasing power levels. The semiconductor components, including the power transistors, remain part of the integrated circuit. Using this hybrid approach, it is possible in modern converterapplications to process around 60 Watt, albeit limited to voltages of a few Volt. For hybrid integrated converters with an output voltage of tens of Volt, the power is limited to approximately 10 Watt. For even higher power levels, the integrated power transistors also become a limiting factor, and are replaced with discrete power devices. In these discrete converters, greatly increased power levels become possible, although the system size rapidly increases. In this work, the limits of the hybrid approach are explored when using so-called smart-power technologies. Smart-power technologies are standard lowcost submicron CMOS technologies that are complemented with a number of integrated high-voltage devices. By using an appropriate combination of smart-power technologies and circuit topologies, it is possible to improve on the current state-of-the-art converters, by optimizing the size, the cost, and the efficiency. To determine the limits of smart-power DC-DC converters, we first discuss the major contributing factors for an efficient energy distribution, and take a look at the role of voltage conversion in the energy distribution. Considering the limitations of the technologies and the potential application areas, we define two test-cases in the telecommunications sector for which we want to optimize the hybrid monolithic integration in a smart-power technology. Subsequently, we explore the specifications of an ideal converter, and the relevant properties of the affordable smart-power technologies for the implementation of DC-DC converters. Taking into account the limitations of these technologies, we define a cost function that allows to systematically evaluate the different potential converter topologies, without having to perform a full design cycle for each topology. From this cost function, we notice that the de facto default topology selection in discrete converters, which is typically based on output power, is not optimal for converters with integrated power transistors. Based on the cost function and the boundary conditions of our test-cases, we determine the optimal topology for a smart-power implementation of these applications. Then, we take another step towards the real world and evaluate the influence of parasitic elements in a smart-power implementation of switching converters. It is noticed that the voltage overshoot caused by the transformer secondary side leakage inductance is a major roadblock for an efficient implementation. Since the usual approach to this voltage overshoot in discrete converters is not applicable in smart-power converters due to technological limitations, an alternative approach is shown and implemented. The energy from the voltage overshoot is absorbed and transferred to the output of the converter. This allows for a significant reduction in the voltage overshoot, while maintaining a high efficiency, leading to an efficient, compact, and low-cost implementation. The effectiveness of this approach was tested and demonstrated in both a version using a commercially available integrated circuit, and our own implementation in a smart-power integrated circuit. Finally, we also take a look at the optimization of switching converters over the load range by exploiting the capabilities of highly integrated converters. Although the maximum output power remains one of the defining characteristics of converters, it has been shown that most converters spend a majority of their lifetime delivering significantly lower output power. Therefore, it is also desirable to optimize the efficiency of the converter at reduced output current and output power. By splitting the power transistors in multiple independent segments, which are turned on or off in function of the current, the efficiency at low currents can be significantly improved, without introducing undesirable frequency components in the output voltage, and without harming the efficiency at higher currents. These properties allow a near universal application of the optimization technique in hybrid monolithic DC-DC converter applications, without significant impact on the complexity and the cost of the system. This approach for the optimization of switching converters over the load range was demonstrated using a boost converter with discrete power transistors. The demonstration of our smart-power implementation was limited to simulations due to an issue with a digital control block. On a finishing note, we formulate the general conclusions and provide an outlook on potential future work based on this research

Mixed-signal integrated circuits design and validation for automotive electronics applications

Automotive electronics is a fast growing market. In a field primarily dominated by mechanical or hydraulic systems, over the past few decades there has been exponential growth in the number of electronic components incorporated into automobiles. Partly thanks to the advance in high voltage smart power processes in nowadays cars is possible to integrate both power/high voltage electronics and analog/digital signal processing circuitry thus allowing to replace a lot of mechanical systems with electro-mechanical or fully electronic ones. High level modeling of complex electronic systems is gaining importance relatively to design space exploration, enabling shorter design and verification cycles, allowing reduced time-to-market. A high level model of a resistor string DAC to evaluate nonlinearities has been developed in MATLAB environment. As a test case for the model, a 10 bit resistive DAC in 0.18um is designed and the results were compared with the traditional transistor level approach. Then we face the analysis and design of a fundamental block: the bandgap voltage reference. Automotive requirements are tough, so the design of the voltage reference includes a pre-regulation part of the battery voltage that allows to enhance overall performances. Moreover an analog integrated driver for an automotive application whose architecture exploits today’s trends of analog-digital integration allowing a greater range of flexibility allowing high configurability and fast prototipization is presented. We covered also the mixed-signal verification approach. In fact, as complexity increases and mixed-signal systems become more and more pervasive, test and verification often tend to be the bottleneck in terms of time effort. A complete flow for mixed-signal verification using VHDL-AMS modeling and Python scripting is presented as an alternative to complex transistor level simulations. Finally conclusions are drawn

Design Techniques of Highly Integrated Hybrid-Switched-Capacitor-Resonant Power Converters for LED Lighting Applications

The Light-emitting diodes (LEDs) are rapidly emerging as the dominant light source given their high luminous efficacy, long lift span, and thanks to the newly enacted efficiency standards in favor of the more environmentally-friendly LED technology. The LED lighting market is expected to reach USD 105.66 billion by 2025. As such, the lighting industry requires LED drivers, which essentially are power converters, with high efficiency, wide input/output range, low cost, small form factor, and great performance in power factor, and luminance flicker. These requirements raise new challenges beyond the traditional power converter topologies. On the other hand, the development and improvement of new device technologies such as printed thin-film capacitors and integrated high voltage/power devices opens up many new opportunities for mitigating such challenges using innovative circuit design techniques and solutions. Almost all electric products needs certain power delivery, regulation or conversion circuits to meet the optimized operation conditions. Designing a high performance power converter is a real challenge given the market’s increasing requirements on energy efficiency, size, cost, form factor, EMI performance, human health impact, and so on. The design of a LED driver system covers from high voltage AC/DC and DC/DC power converters, to high frequency low voltage digital controllers, to power factor correction (PFC) and EMI filtering techniques, and to safety solutions such as galvanic isolation. In this thesis, we study design challenges and present corresponding solutions to realize highly integrated and high performance LED drivers combining switched-capacitor and resonant converters, applying re-configurable multi-level circuit topology, utilizing sigma delta modulation, and exploring capacitive galvanic isolation. A hybrid switched-capacitor-resonant (HSCR) LED driver based on a stackable switched-capacitor (SC) converter IC rated for 15 to 20 W applications. Bulky transformers have been replaced with a SC ladder to perform high-efficiency voltage step-down conversion; an L-C resonant output network provides almost lossless current regulation and demonstrates the potential of capacitive galvanic isolation. The integrated SC modules can be stacked in the voltage domain to handle a large range of input voltage ranges that largely exceed the voltage limitation of the medium-voltage-rated 120 V silicon technology. The LED driver demonstrates > 91% efficiency over a rectified input DC voltage range from 160 VDC to 180 VDC with two stacked ICs; using a stack of four ICs > 89.6% efficiency is demonstrated over an input range from 320 VDC to 360 VDC . The LED driver can dim its output power to around 10% of the rated power while maintaining >70% efficiency with a PWM controlled clock gating circuit. Next, the design of AC main rectifier and inverter front end with sigma delta modulation is described. The proposed circuits features a pair of sigma delta controlled multilevel converters. The first is a multilevel rectifier responsible for PFC and dimming. The second is a bidirectional multilevel inverter used to cancel AC power ripple from the DC bus. The system also contains an output stage that powers the LEDs with DC and provides for galvanic isolation. Its functional performance indicates that integrated multilevel converters are a viable topology for lighting and other similar applications