Hybridly Integrated Diode Lasers for Emerging Applications: Design, Fabrication, and Characterization

The emerging applications of LiDAR, microresonator based frequency comb, and photon pair generation in photonic integrated circuits (PICs) have attracted lots of research interests recently. The single frequency, high power, narrow-linewidth, tunable semiconductor lasers are highly desired for the implementation of these emerging applications in future PICs. In this dissertation, we use the hybrid integration via edge coupling to obtain the integrated diode lasers for future PICs, since the active chip and the passive chip can be fabricated and optimized independently. We demonstrate hybridly integrated narrow-linewidth, tunable diode lasers in the Indium Phosphide/Gallium Arsenide-silicon nitride (InP/GaAs-Si3N4) platform. Silicon nitride photonic integrated circuits, instead of silicon waveguides that suffer from high optical loss near 1 µm, are chosen to build a tunable external cavity for both InP and GaAs gain chips at the same time. Single frequency lasing at 1.55 µm and 1 µm is simultaneously obtained on a single chip with spectral linewidths of 18-kHz and 70-kHz, a side mode suppression ratio of 52 dB and 46 dB, and tuning range of 46 nm and 38 nm, respectively. The resulting dual-band narrow-linewidth diode lasers have potential for use in a variety of novel applications such as integrated difference-frequency generation, quantum photonics, and nonlinear optics. We also demonstrate one potential application of the dual-band diode laser in beam steering. The dual-band diode laser combined with a waveguide surface grating can provide the beam steering by tuning the wavelength of the light signal. However, the output power of the hybridly integrated diode lasers is still limited. Integrated coherent beam combining (CBC) is a promising solution to overcome this limitation. In this dissertation, coherently combined, integrated diode laser systems are experimentally demonstrated through hybrid integration. A chip-scale coherently combined laser system is experimentally demonstrated in the InP-Si3N4 platform through the manipulation of optical feedbacks at different output ports of the coupled laser cavities. Coherent combining of two InP-based reflective semiconductor amplifiers is obtained by use of the cross-coupling provided by an adiabatic 3 dB coupler in silicon nitride, with a combining efficiency of ~92%. The novel system not only realizes the miniaturization of coherent laser beam combining but also provides a chip-scale platform to study the coherent coupling between coupled laser cavities. Besides, the emerging platforms (i.e., gain chips based on semiconductor quantum dots, silicon-carbide-on-insulator and lithium-niobate-on-insulator) have attracted intense interests in recent years. The hybridly integrated diode lasers through edge coupling are demonstrated in these emerging platforms. In addition, we study the Parity-Time (PT) symmetry in the chip-scale hybrid platform. PT symmetric coupled microresonators with judiciously modulated loss and gain have been widely studied to reveal many non-Hermitian features in optical systems. The phase transition at the exceptional points (EPs) is a unique feature of the PT symmetric non-Hermitian systems. In this dissertation, we propose and demonstrate an electrically pumped, hybridly integrated chip-scale non-Hermitian system, where the optical gain, loss and coupling are separately controlled to allow for the PT symmetry breaking and direct access of the EPs. We use the coupled Fabry-Perot resonators through the hybrid integration of two InP active chips with one Si3N4 passive chip to realize the versatile control of the gain and loss. We first demonstrate the PT symmetry breaking and access of the EPs by investigating the spectral and spatial transition processes of the hybrid system induced by the asymmetric gains in the InP active chips. We then control the loss distribution in the Si3N4 passive chip so that the system loss contrast exceeds the coupling coefficient, which leads to the PT symmetry breaking and coherent addition of the two coupled lasers. Our integrated non-Hermitian optical system in the chip-scale hybrid integration platform successfully bridges the non-Hermitian physics and photonic integrated circuits and is able to expand the practical applications of non-Hermitian optical systems to a whole new stage

Ultra-Narrow Bandwidth Optical Resonators for Integrated Low Frequency Noise Lasers

The development of narrowband resonators has far reaching applications in integrated optics. As a precise reference of wavelength, filters can be used in sensors, metrology, nonlinear optics, microwave photonics, and laser stabilization. In this work, we develop record high quality factor (Q) Si3N4 waveguide resonators, and utilize them to stabilize a heterogeneously integrated Si/III V laser. To increase the Q factor of waveguide resonators, particular attention is given to loss mechanisms. Propagation loss of <0.1 dB/m is demonstrated on the ultra low loss waveguide platform, a low index contrast, high aspect ratio Si3N4 waveguide geometry fabricated with high quality materials and high temperature anneals. Ideality in the directional couplers used for coupling to the resonators is studied and losses are reduced such that 81 million intrinsic Q factor is achieved. Additional results include 1×16 resonant splitters, low κ narrowband gratings, and a dual layer waveguide technology for low loss and low bend radius in separate regions of the same device layer. We then combine an ultra high Q resonator and a heterogeneous Si/III V laser in a Pound Drever Hall (PDH) frequency stabilization system to yield narrow linewidth characteristics for a stable on chip laser reference. The high frequency noise filtering is performed with Si resonant mirrors in the laser cavity. A 30 million Q factor Si3N4 resonator is used with electrical feedback to reduce close in noise and frequency walk off. The laser shows high frequency noise levels of 60×10^3 Hz^2/Hz corresponding to 160 kHz linewidth, and the low frequency noise is suppressed 33 dB to 10^3 Hz^2/Hz with the PDH system

Reconfigurable Reflective Arrayed Waveguide Grating on Silicon Nitride

[ES] La presente tesis se ha centrado en el modelado, diseño y demonstración experimental por primera vez del dispositivo Reconfigurable Reflective Arrayed Waveguide Grating (R-RAWG). Para la consecución de este dispositivo que tiene posibilidades de uso en la espectrometría, una plataforma de nitruro de silicio llamada CNM-VLC se ha usado, ya que este material permite operar en un gran ancho de banda. Esta plataforma posee ciertas limitaciones y los elementos necesarios para el funcionamiento de este dispositivo tenían un performance bajo. Por ello, se ha desarrollado y validado una metodología que ha permitido obtener mejores divisores. Además, se ha diseñado un inverted taper que ha mejorado considerablemente el acoplo de luz al chip. Esto ha sido gracias a un exhaustivo análisis de opciones existentes en la literatura que también ha permitido escoger la mejor opción para realizar un espejo reconfigurable en la plataforma sin cambiar ni añadir ningún proceso de fabricación. Se han demostrado espejos reconfigurables gracias a utilizar divisores ópticos realimentados y también se ha desarrollado códigos que predicen el comportamiento del dispositivo experimentalmente. Con todo el trabajo realizado, se ha diseñado un R-RAWG para que pudiera operar en un gran ancho de banda y que los actuadores de fase no tuvieran peligro de estropearse. También se ha desarrollado un código para el modelado del R-RAWG que permite imitar la fabricación de estos dispositivos y que, gracias a esto, se ha desarrollado un método o algoritmo llamado DPASTOR, que usa algoritmos usados en machine learning, para optimizar la respuesta con tan sólo la potencia óptica de salida. Finalmente, se ha diseñado una PCB para poder conectar eléctricamente el chip fotónico y se ha desarrollado un método de medida que ha permitido tener una respuesta estable consiguiendo demostrar multitud de respuestas de filtros ópticos con el mismo dispositivo.[CAT] La present tesi s'ha centrat en el modelatge, disseny i demonstració experimental per primera vegada del dispositiu Reconfigurable Reflective Arrayed Waveguide Grating (R-RAWG). Per a la consecució d'aquest dispositiu que té possibilitats d'ús en l'espectrometria, una plataforma de nitrur de silici anomenada CNM-VLC s'ha usat ja que aquest material permet operar en una gran amplada de banda. Aquesta plataforma posseeix certes limitacions i els elements necessaris per al funcionament d'aquest dispositiu tenien un performance baix. Per això, s'ha desenvolupat i validat una metodologia que ha permés obtindre millors divisors i també, gràcies als processos de fabricació, s'ha dissenyat un acoplador que ha millorat considerablement l'acoble de llum al xip. Això ha sigut gràcies a un exhaustiu analisis d'opcions existents en la literatura que també ha permés triar la millor opció per a realitzar un espill reconfigurable en la plataforma sense canviar ni afegir cap procés de fabricació. S'han demonstrat espills reconfigurables gràcies a utilitzar divisors realimentats i també s'ha desenvolupat codis que prediuen el comportament del dispostiu experimentalment. Amb tot el treball realitzat, s'ha dissenyat un R-RAWG fent ús de determinades consideracions perquè poguera operar en una gran amplada de banda i que els actuadors de fase no tingueren perill de desbaratar-se. També s'ha desenvolupat un codi per al modelatge del R-RAWG que permet imitar la fabricació d'aquests dispositius i que, gràcies a això, s'ha desenvolupat un mètode o algorisme anomenat DPASTOR, que usa algorismes usats en machine learning, per a optimitzar la resposta amb tan sols la potència òptica d'eixida. Finalment, s'ha dissenyat una PCB per a poder connectar elèctricament el xip fotònic i s'ha desenvolupat un mètode de mesura que ha permés tindre una resposta estable aconseguint demostrar multitud de respostes de filtres òptics amb el mateix dispositiu.[EN] This thesis is focused on the modelling, design and experimental demonstration for the first time of Reconfigurable Reflective Arrayed Waveguide Grating (R-RAWG) device. In order to build this device, that can be employed in spectrometry, a silicon nitride platform termed CNM-VLC has been chosen since this material allows to operate in broad range of wavelengths. This platform has the necessary elements, but some limitations because the operation of this device had a low performance. Therefore, a methodology has been developed and validated, which has allowed to obtain better splitters. Also an inverted taper has been designed, which has considerably improved the coupling of light to the chip. This has been possible thanks to an exhaustive analysis of existing options in the literature, that has allowed choosing the best option to make a reconfigurable mirror on the platform without changing or adding new manufacturing steps. Reconfigurable mirrors have been demonstrated by using feedback splitters. Furthermore, codes have been developed to predict the behaviour of the actual device. With all the work done, a R-RAWG has been designed by using certain considerations so that it can operate over a broad wavelength range and the phase actuators are not in danger of being damaged. A code has also been developed for the modelling of the R-RAWG, which allows manufacturing imperfections to be considered, thanks to this, a method or algorithm called DPASTOR has been developed. DPASTOR resembles machine learning to optimise the response by just using the optical output power. Finally, a PCB and an assembly with the chip interconnected to it have been made and designed. Moreover, a measurement method has been developed, which has made it possible to have a stable response and to demonstrate a multitude of optical filter responses with the same device.Fernández Vicente, J. (2021). Reconfigurable Reflective Arrayed Waveguide Grating on Silicon Nitride [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/165783TESI

Subwavelength Engineering of Silicon Photonic Waveguides

The dissertation demonstrates subwavelength engineering of silicon photonic waveguides in the form of two different structures or avenues: (i) a novel ultra-low mode area v-groove waveguide to enhance light-matter interaction; and (ii) a nanoscale sidewall crystalline grating performed as physical unclonable function to achieve hardware and information security. With the advancement of modern technology and modern supply chain throughout the globe, silicon photonics is set to lead the global semiconductor foundries, thanks to its abundance in nature and a mature and well-established industry. Since, the silicon waveguide is the heart of silicon photonics, it can be considered as the core building block of modern integrated photonic systems. Subwavelength structuring of silicon waveguides shows immense promise in a variety of field of study, such as, tailoring electromagnetic near fields, enhancing light-matter interactions, engineering anisotropy and effective medium effects, modal and dispersion engineering, nanoscale sensitivity etc. In this work, we are going to exploit the boundary conditions of modern silicon photonics through subwavelength engineering by means of novel ultra-low mode area v-groove waveguide to answer long-lasting challenges, such as, fabrication of such sophisticated structure while ensuring efficient coupling of light between dissimilar modes. Moreover, physical unclonable function derived from our nanoscale sidewall crystalline gratings should give us a fast and reliable optical security solution with improved information density. This research should enable new avenues of subwavelength engineered silicon photonic waveguide and answer to many unsolved questions of silicon photonics foundries

Monolithic integrated reflective transceiver in indium phosphide

The work presented in this thesis is about an InP based monolithic integrated reflective transceiver meant for use in future fiber access networks at the user site. The motivation for this research results from the users’ demands for ever-increasing bandwidth at low cost of operation, administration and maintenance. We investigated solutions to these challenges with a network concept using a dynamically reconfigurable optical network topology with a wavelength router and a colorless optical network unit. This work focuses on developing the optical part of the optical network unit, a reflective transceiver. This reflective transceiver consists of three basic components: a tunable wavelength duplexer, a photodetector and a reflective modulator. The tunable wavelength duplexer separates two wavelengths, one for the downstream and one for the upstream signals, and guides them to the photodetector and the reflective modulator. The photodetector detects the downstream data. The reflective modulator modulates the light carrier with the upstream data and reflects it back to the network. The integrated transceiver was realized bymonolithically integrating these components on a common active-passive butt-joint layer stack based on InP technology. This approach not only offers high bandwidth for both downstream data and upstream data, but also lowers the cost of the device and the network operation because of the colorless operation at the user site. The main results obtained within this work are summarized as follows: an efficient and polarization insensitive tunable wavelength duplexer was realized; a new method to fabricate a reflective SOA has been proposed and demonstrated; a high performance waveguide photodetector based on SOA layer stack was successfully fabricated; a low cost photoreceiverwhich includes an InP photodetector and a SiGe amplifier was demonstrated; aworking monolithic integrated reflective transceiver based on InP was successfully realized and demonstrated; two monolithic integrated transceivers aiming for higher bandwidth have been designed and fabricated. In addition, a novel MMI reflector has been proposed and realized with high reflectivity. This work was funded by DutchMinistry of Economic Affairs through the Freeband Project Broadband Photonics Access, the Smartmix projectMemphis and the NRC Photonics

Novel printing technologies for nanophotonic and nanoelectronic devices

textAs optical interconnects make their paces to replace traditional electrical interconnects, implementing low cost optical components and hybrid optic-electronic systems are of great interest. In the research work described in this dissertation, we are making our efforts to develop several practical optical components using novel printing technologies including imprinting, ink-jet printing and a combination of both. Imprinting process using low cost electroplating mold is investigated and applied to the waveguide molding process, and it greatly reduces the surface roughness and thus the optical propagation loss. The imprinting process can be applied to photonic components from multi-mode waveguides with 50[mu]m critical dimension down to photonic crystal structures with 500nm hole diameter. Compared to traditional lithography process, imprinting process is featured by its great repeatability and high yield to define patterns on existing layers. Furthermore we still need an approach to deposit layers and that is the reason we integrate the ink-jet printing technology, another low-cost, low material consumption, environmental friendly process. Ink-jet printing process is capable of depositing a wide range of materials, including conductive layer, dielectric layer or other functional layers with defined patterns. Together with molding technology, we demonstrate three applications: proximity coupler, thermo-optic (TO) switch and electro-optic (EO) polymer modulator. The proximity coupler uses imprinted 50[mu]m waveguide with embedded mirrors and ink-jet printed micro-lenses to improve the board-to-board optical interconnects quality. The TO switch and EO modulator both utilize imprinting technology to define a core pattern in the cladding layer. Ink-jet printing is used to deposit the core layer for TO switch and the electrode layers for EO modulator. The fabricated TO switch operates at 1 kHz with less than 0.5ms switching time and the EO modulator shows V[pi][middle dot]L=5.68V[middle dot]cm. To the best of our knowledge, these are the first demonstrations of functional optical switches and modulators using printing method. To further enable the high rate fabrication of ink-jet printed photonic and electronic devices with multiple layers on flexible substrate, we develop a roll-to-roll ink-jet printing system, from hardware integration to software implementation. Machine vision aided real time automatic registration is achieved when printing multiple layers.Electrical and Computer Engineerin