Advanced miniature processing handware for ATR applications

A Hybrid Optoelectronic Neural Object Recognition System (HONORS), is disclosed, comprising two major building blocks: (1) an advanced grayscale optical correlator (OC) and (2) a massively parallel three-dimensional neural-processor. The optical correlator, with its inherent advantages in parallel processing and shift invariance, is used for target of interest (TOI) detection and segmentation. The three-dimensional neural-processor, with its robust neural learning capability, is used for target classification and identification. The hybrid optoelectronic neural object recognition system, with its powerful combination of optical processing and neural networks, enables real-time, large frame, automatic target recognition (ATR)

Optical implementations of radial basis classifiers

We describe two optical systems based on the radial basis function approach to pattern classification. An optical-disk-based system for handwritten character recognition is demonstrated. The optical system computes the Euclidean distance between an unknown input and 650 stored patterns at a demonstrated rate of 26,000 pattern comparisons/s. The ultimate performance of this system is limited by optical-disk resolution to 10^11 binary operations/s. An adaptive system is also presented that facilitates on-line learning and provides additional robustness

An Optoelectronic Implementation of the Adaptive Resonance Neural Network

A solution to the problem of implementation of the adaptive resonance theory (ART) of neural networks that uses an optical correlator which allows the large body of correlator research to be leveraged in the implementation of ART is presented. The implementation takes advantage of the fact that one ART-based architecture, known as ART1, can be broken into several parts, some of which are better to implement in parallel. The control structure of ART, often regarded as its most complex part, is actually not very time consuming and can be done in electronics. The bottom-up and top-down gated pathways, however, are very time consuming to simulate and are difficult to implement directly in electronics due to the high number of interconnections. In addition to the design, the authors present experiments with a laboratory prototype to illustrate its feasibility and to discuss implementation details that arise in practice. This device can potentially outperform alternative implementations of ART1 by as much as two to three orders of magnitude in problems requiring especially large input field

Design and characterisation of a ferroelectric liquid crystal over silicon spatial light modulator

Many optical processing systems rely critically on the availability of high performance, electrically-addressed spatial light modulators. Ferroelectric liquid crystal over silicon is an attractive spatial light modulator technology because it combines two well matched technologies. Ferroelectric liquid crystal modulating materials exhibit fast switching times with low operating voltages, while very large scale silicon integrated circuits offer high-frequency, low power operation, and versatile functionality. This thesis describes the design and characterisation of the SBS256 - a general purpose 256 x 256 pixel ferroelectric liquid crystal over silicon spatial light modulator that incorporates a static-RAM latch and an exclusive-OR gate at each pixel. The static-RAM latch provides robust data storage under high read-beam intensities, while the exclusive-OR gate permits the liquid crystal layer to be fully and efficiently charge balanced. The SBS256 spatial light modulator operates in a binary mode. However, many applications, including helmet-mounted displays and optoelectronic implementations of artificial neural networks, require devices with some level of grey-scale capability. The 2 kHz frame rate of the device, permits temporal multiplexing to be used as a means of generating discrete grey-scale in real-time. A second integrated circuit design is also presented. This prototype neuraldetector backplane consists of a 4 x 4 array of optical-in, electronic-out processing units. These can sample the temporally multiplexed grey-scale generated by the SBS256. The neurons implement the post-synaptic summing and thresholding function, and can respond to both positive and negative activations - a requirement of many artificial neural network models

A walk on the frontier of energy electronics with power ultra-wide bandgap oxides and ultra-thin neuromorphic 2D materials

Altres ajuts: the ICN2 is funded also by the CERCA programme / Generalitat de CatalunyaUltra-wide bandgap (UWBG) semiconductors and ultra-thin two-dimensional materials (2D) are at the very frontier of the electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and deeper ultraviolet optoelectronics. Gallium oxide - GaO(4.5-4.9 eV), has recently emerged as a suitable platform for extending the limits which are set by conventional (-3 eV) WBG e.g. SiC and GaN and transparent conductive oxides (TCO) e.g. In2O3, ZnO, SnO2. Besides, GaO, the first efficient oxide semiconductor for energy electronics, is opening the door to many more semiconductor oxides (indeed, the largest family of UWBGs) to be investigated. Among these new power electronic materials, ZnGa2O4 (-5 eV) enables bipolar energy electronics, based on a spinel chemistry, for the first time. In the lower power rating end, power consumption also is also a main issue for modern computers and supercomputers. With the predicted end of the Moores law, the memory wall and the heat wall, new electronics materials and new computing paradigms are required to balance the big data (information) and energy requirements, just as the human brain does. Atomically thin 2D-materials, and the rich associated material systems (e.g. graphene (metal), MoS2 (semiconductor) and h-BN (insulator)), have also attracted a lot of attention recently for beyond-silicon neuromorphic computing with record ultra-low power consumption. Thus, energy nanoelectronics based on UWBG and 2D materials are simultaneously extending the current frontiers of electronics and addressing the issue of electricity consumption, a central theme in the actions against climate chang

Center for Space Microelectronics Technology

The 1990 technical report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during 1990. The report lists 130 publications, 226 presentations, and 87 new technology reports and patents

Discrete All-Positive Multilayer Perceptrons for Optical Implementation

All-optical multilayer perceptrons differ in various ways from the ideal neural network model. Examples are the use of non-ideal activation functions which are truncated, asymmetric, and have a non-standard gain, restriction of the network parameters to non-negative values, and the limited accuracy of the weights. In this paper, a backpropagation-based learning rule is presented that compensates for these non-idealities and enables the implementation of all-optical multilayer perceptrons where learning occurs under control of a computer. The good performance of this learning rule, even when using a small number of weight levels, is illustrated by a series of experiments including the non-idealities

Unipolar terminal-attractor based neural associative memory with adaptive threshold

A unipolar terminal-attractor based neural associative memory (TABAM) system with adaptive threshold for perfect convergence is presented. By adaptively setting the threshold values for the dynamic iteration for the unipolar binary neuron states with terminal-attractors for the purpose of reducing the spurious states in a Hopfield neural network for associative memory and using the inner product approach, perfect convergence and correct retrieval is achieved. Simulation is completed with a small number of stored states (M) and a small number of neurons (N) but a large M/N ratio. An experiment with optical exclusive-OR logic operation using LCTV SLMs shows the feasibility of optoelectronic implementation of the models. A complete inner-product TABAM is implemented using a PC for calculation of adaptive threshold values to achieve a unipolar TABAM (UIT) in the case where there is no crosstalk, and a crosstalk model (CRIT) in the case where crosstalk corrupts the desired state