An MPEG-4 performance study for non-SIMD, general purpose architectures

MPEG-4 is an important international standard with wide applicability. This paper focuses on MPEG-4's main profile, video, whose approach allows more efficiency in coding and more flexibility in managing heterogeneous media objects than previous MPEG standards. This study presents evidence to support the assertion that for non-SIMD architectures and computational models, most memory-system optimizations will have little effect on MPEG-4 performance. This paper makes two contributions. First, it serves as an independent confirmation that for current, general-purpose architectures, MPEG-4 video is computation bound (just like most other media processing applications). Second, our findings should prove useful to other researchers and practitioners considering how to (or how not to) optimize MPEG-4 performance.Peer ReviewedPostprint (published version

Algorithm and Hardware Design for High Volume Rate 3-D Medical Ultrasound Imaging

abstract: Ultrasound B-mode imaging is an increasingly significant medical imaging modality for clinical applications. Compared to other imaging modalities like computed tomography (CT) or magnetic resonance imaging (MRI), ultrasound imaging has the advantage of being safe, inexpensive, and portable. While two dimensional (2-D) ultrasound imaging is very popular, three dimensional (3-D) ultrasound imaging provides distinct advantages over its 2-D counterpart by providing volumetric imaging, which leads to more accurate analysis of tumor and cysts. However, the amount of received data at the front-end of 3-D system is extremely large, making it impractical for power-constrained portable systems. In this thesis, algorithm and hardware design techniques to support a hand-held 3-D ultrasound imaging system are proposed. Synthetic aperture sequential beamforming (SASB) is chosen since its computations can be split into two stages, where the output generated of Stage 1 is significantly smaller in size compared to the input. This characteristic enables Stage 1 to be done in the front end while Stage 2 can be sent out to be processed elsewhere. The contributions of this thesis are as follows. First, 2-D SASB is extended to 3-D. Techniques to increase the volume rate of 3-D SASB through a new multi-line firing scheme and use of linear chirp as the excitation waveform, are presented. A new sparse array design that not only reduces the number of active transducers but also avoids the imaging degradation caused by grating lobes, is proposed. A combination of these techniques increases the volume rate of 3-D SASB by 4\texttimes{} without introducing extra computations at the front end. Next, algorithmic techniques to further reduce the Stage 1 computations in the front end are presented. These include reducing the number of distinct apodization coefficients and operating with narrow-bit-width fixed-point data. A 3-D die stacked architecture is designed for the front end. This highly parallel architecture enables the signals received by 961 active transducers to be digitalized, routed by a network-on-chip, and processed in parallel. The processed data are accumulated through a bus-based structure. This architecture is synthesized using TSMC 28 nm technology node and the estimated power consumption of the front end is less than 2 W. Finally, the Stage 2 computations are mapped onto a reconfigurable multi-core architecture, TRANSFORMER, which supports different types of on-chip memory banks and run-time reconfigurable connections between general processing elements and memory banks. The matched filtering step and the beamforming step in Stage 2 are mapped onto TRANSFORMER with different memory configurations. Gem5 simulations show that the private cache mode generates shorter execution time and higher computation efficiency compared to other cache modes. The overall execution time for Stage 2 is 14.73 ms. The average power consumption and the average Giga-operations-per-second/Watt in 14 nm technology node are 0.14 W and 103.84, respectively.Dissertation/ThesisDoctoral Dissertation Engineering 201

Design and Code Optimization for Systems with Next-generation Racetrack Memories

With the rise of computationally expensive application domains such as machine learning, genomics, and fluids simulation, the quest for performance and energy-efficient computing has gained unprecedented momentum. The significant increase in computing and memory devices in modern systems has resulted in an unsustainable surge in energy consumption, a substantial portion of which is attributed to the memory system. The scaling of conventional memory technologies and their suitability for the next-generation system is also questionable. This has led to the emergence and rise of nonvolatile memory ( NVM ) technologies. Today, in different development stages, several NVM technologies are competing for their rapid access to the market. Racetrack memory ( RTM ) is one such nonvolatile memory technology that promises SRAM -comparable latency, reduced energy consumption, and unprecedented density compared to other technologies. However, racetrack memory ( RTM ) is sequential in nature, i.e., data in an RTM cell needs to be shifted to an access port before it can be accessed. These shift operations incur performance and energy penalties. An ideal RTM , requiring at most one shift per access, can easily outperform SRAM . However, in the worst-cast shifting scenario, RTM can be an order of magnitude slower than SRAM . This thesis presents an overview of the RTM device physics, its evolution, strengths and challenges, and its application in the memory subsystem. We develop tools that allow the programmability and modeling of RTM -based systems. For shifts minimization, we propose a set of techniques including optimal, near-optimal, and evolutionary algorithms for efficient scalar and instruction placement in RTMs . For array accesses, we explore schedule and layout transformations that eliminate the longer overhead shifts in RTMs . We present an automatic compilation framework that analyzes static control flow programs and transforms the loop traversal order and memory layout to maximize accesses to consecutive RTM locations and minimize shifts. We develop a simulation framework called RTSim that models various RTM parameters and enables accurate architectural level simulation. Finally, to demonstrate the RTM potential in non-Von-Neumann in-memory computing paradigms, we exploit its device attributes to implement logic and arithmetic operations. As a concrete use-case, we implement an entire hyperdimensional computing framework in RTM to accelerate the language recognition problem. Our evaluation shows considerable performance and energy improvements compared to conventional Von-Neumann models and state-of-the-art accelerators

Low Power Memory/Memristor Devices and Systems

This reprint focusses on achieving low-power computation using memristive devices. The topic was designed as a convenient reference point: it contains a mix of techniques starting from the fundamental manufacturing of memristive devices all the way to applications such as physically unclonable functions, and also covers perspectives on, e.g., in-memory computing, which is inextricably linked with emerging memory devices such as memristors. Finally, the reprint contains a few articles representing how other communities (from typical CMOS design to photonics) are fighting on their own fronts in the quest towards low-power computation, as a comparison with the memristor literature. We hope that readers will enjoy discovering the articles within

Design Space Exploration and Resource Management of Multi/Many-Core Systems

The increasing demand of processing a higher number of applications and related data on computing platforms has resulted in reliance on multi-/many-core chips as they facilitate parallel processing. However, there is a desire for these platforms to be energy-efficient and reliable, and they need to perform secure computations for the interest of the whole community. This book provides perspectives on the aforementioned aspects from leading researchers in terms of state-of-the-art contributions and upcoming trends

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Parallel algorithms and architectures for low power video decoding

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.Cataloged from PDF version of thesis.Includes bibliographical references (p. 197-204).Parallelism coupled with voltage scaling is an effective approach to achieve high processing performance with low power consumption. This thesis presents parallel architectures and algorithms designed to deliver the power and performance required for current and next generation video coding. Coding efficiency, area cost and scalability are also addressed. First, a low power video decoder is presented for the current state-of-the-art video coding standard H.264/AVC. Parallel architectures are used along with voltage scaling to deliver high definition (HD) decoding at low power levels. Additional architectural optimizations such as reducing memory accesses and multiple frequency/voltage domains are also described. An H.264/AVC Baseline decoder test chip was fabricated in 65-nm CMOS. It can operate at 0.7 V for HD (720p, 30 fps) video decoding and with a measured power of 1.8 mW. The highly scalable decoder can tradeoff power and performance across >100x range. Second, this thesis demonstrates how serial algorithms, such as Context-based Adaptive Binary Arithmetic Coding (CABAC), can be redesigned for parallel architectures to enable high throughput with low coding efficiency cost. A parallel algorithm called the Massively Parallel CABAC (MP-CABAC) is presented that uses syntax element partitions and interleaved entropy slices to achieve better throughput-coding efficiency and throughput-area tradeoffs than H.264/AVC. The parallel algorithm also improves scalability by providing a third dimension to tradeoff coding efficiency for power and performance. Finally, joint algorithm-architecture optimizations are used to increase performance and reduce area with almost no coding penalty. The MP-CABAC is mapped to a highly parallel architecture with 80 parallel engines, which together delivers >10x higher throughput than existing H.264/AVC CABAC implementations. A MP-CABAC test chip was fabricated in 65-nm CMOS to demonstrate the power-performance-coding efficiency tradeoff.by Vivienne. Sze.Ph.D