Noise shaping Asynchronous SAR ADC based time to digital converter

Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin

Integrated Electronics for Wireless Imaging Microsystems with CMUT Arrays

Integration of transducer arrays with interface electronics in the form of single-chip CMUT-on-CMOS has emerged into the field of medical ultrasound imaging and is transforming this field. It has already been used in several commercial products such as handheld full-body imagers and it is being implemented by commercial and academic groups for Intravascular Ultrasound and Intracardiac Echocardiography. However, large attenuation of ultrasonic waves transmitted through the skull has prevented ultrasound imaging of the brain. This research is a prime step toward implantable wireless microsystems that use ultrasound to image the brain by bypassing the skull. These microsystems offer autonomous scanning (beam steering and focusing) of the brain and transferring data out of the brain for further processing and image reconstruction. The objective of the presented research is to develop building blocks of an integrated electronics architecture for CMUT based wireless ultrasound imaging systems while providing a fundamental study on interfacing CMUT arrays with their associated integrated electronics in terms of electrical power transfer and acoustic reflection which would potentially lead to more efficient and high-performance systems. A fully wireless architecture for ultrasound imaging is demonstrated for the first time. An on-chip programmable transmit (TX) beamformer enables phased array focusing and steering of ultrasound waves in the transmit mode while its on-chip bandpass noise shaping digitizer followed by an ultra-wideband (UWB) uplink transmitter minimizes the effect of path loss on the transmitted image data out of the brain. A single-chip application-specific integrated circuit (ASIC) is de- signed to realize the wireless architecture and interface with array elements, each of which includes a transceiver (TRX) front-end with a high-voltage (HV) pulser, a high-voltage T/R switch, and a low-noise amplifier (LNA). Novel design techniques are implemented in the system to enhance the performance of its building blocks. Apart from imaging capability, the implantable wireless microsystems can include a pressure sensing readout to measure intracranial pressure. To do so, a power-efficient readout for pressure sensing is presented. It uses pseudo-pseudo differential readout topology to cut down the static power consumption of the sensor for further power savings in wireless microsystems. In addition, the effect of matching and electrical termination on CMUT array elements is explored leading to new interface structures to improve bandwidth and sensitivity of CMUT arrays in different operation regions. Comprehensive analysis, modeling, and simulation methodologies are presented for further investigation.Ph.D

Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies

CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections

Design of sigma-delta modulators for analog-to-digital conversion intensively using passive circuits

This thesis presents the analysis, design implementation and experimental evaluation of passiveactive discrete-time and continuous-time Sigma-Delta (ΣΔ) modulators (ΣΔMs) analog-todigital converters (ADCs). Two prototype circuits were manufactured. The first one, a discrete-time 2nd-order ΣΔM, was designed in a 130 nm CMOS technology. This prototype confirmed the validity of the ultra incomplete settling (UIS) concept used for implementing the passive integrators. This circuit, clocked at 100 MHz and consuming 298 μW, achieves DR/SNR/SNDR of 78.2/73.9/72.8 dB, respectively, for a signal bandwidth of 300 kHz. This results in a Walden FoMW of 139.3 fJ/conv.-step and Schreier FoMS of 168 dB. The final prototype circuit is a highly area and power efficient ΣΔM using a combination of a cascaded topology, a continuous-time RC loop filter and switched-capacitor feedback paths. The modulator requires only two low gain stages that are based on differential pairs. A systematic design methodology based on genetic algorithm, was used, which allowed decreasing the circuit’s sensitivity to the circuit components’ variations. This continuous-time, 2-1 MASH ΣΔM has been designed in a 65 nm CMOS technology and it occupies an area of just 0.027 mm2. Measurement results show that this modulator achieves a peak SNR/SNDR of 76/72.2 dB and DR of 77dB for an input signal bandwidth of 10 MHz, while dissipating 1.57 mW from a 1 V power supply voltage. The ΣΔM achieves a Walden FoMW of 23.6 fJ/level and a Schreier FoMS of 175 dB. The innovations proposed in this circuit result, both, in the reduction of the power consumption and of the chip size. To the best of the author’s knowledge the circuit achieves the lowest Walden FOMW for ΣΔMs operating at signal bandwidth from 5 MHz to 50 MHz reported to date

Time-to-digital converters and histogram builders in SPAD arrays for pulsed-LiDAR

Light Detection and Ranging (LiDAR) is a 3D imaging technique widely used in many applications such as augmented reality, automotive, machine vision, spacecraft navigation and landing. Pulsed-LiDAR is one of the most diffused LiDAR techniques which relies on the measurement of the round-trip travel time of an optical pulse back-scattered from a distant target. Besides the light source and the detector, Time-to-Digital Converters (TDCs) are fundamental components in pulsed-LiDAR systems, since they allow to measure the back-scattered photon arrival times and their performance directly impact on LiDAR system requirements (i.e., range, precision, and measurements rate). In this work, we present a review of recent TDC architectures suitable to be integrated in SPAD-based CMOS arrays and a review of data processing solutions to derive the TOF information. Furthermore, main TDC parameters and processing techniques are described and analyzed considering pulsed-LiDAR requirements

Power efficient analog-to-digital converters using both voltage and time domain information

As advanced wired and wireless communication systems attempt to achieve higher performance, the demand for high resolution and wide signal bandwidth in their associated ADCs is strongly increased. Recently, time-domain quantization has drawn attention from its scalability in deep submicron CMOS processes. Furthermore, there are several interesting aspects of time-domain quantizer by processing the signal in time rather than only in voltage domain especially for power efficiency. This research focuses on developing a new architecture for power efficient, high resolution ADCs using both voltage and time domain information. As a first approach, a new ΔƩ ADC based on a noise-shaped two-step integrating quantizer which quantizes the signal in voltage and time domains is presented. Attaining an extra order of noise-shaping from the integrating quantizer, the proposed ΔƩ ADC manifests a second-order noise-shaping with a first-order loop filter. Furthermore, this quantizer provides an 8b uantization in itself, drastically reducing the oversampling requirement. The proposed ADC also incorporates a new feedback DAC topology that alleviates the feedback DAC complexity of a two-step 8b quantizer. The measured results of the prototype ADC implemented in a 0.13μm CMOS demonstrate peak SNDR of 70.7dB (11.5b ENOB) at 8.1mW power, with an 8x OSR at 80MHz sampling frequency. To further improve ADC performance, a Nyquist ADC based on a time-based pipelined TDC is also proposed as a second approach. In this work, a simple V-T conversion scheme with a cheap low gain amplifier in its first stage and a hybrid time-domain quantization stage based on simple charge pump and capacitive DAC in its backend stages, are also proposed to improve ADC linearity and power efficiency. Using voltage and time domain information, the proposed ADC architecture is beneficial for both resolution and power efficiency, with MSBs resolved in voltage domain and LSBs in time domain. The measured results of the prototype ADC implemented in a 0.13μm CMOS demonstrate peak SNDR of 69.3dB (11.2b ENOB) at 6.38mW power and 70MHz sampling frequency. The FOM is 38.2fJ/conversion-step

Analog-to-digital interface design in wireless receivers

As one of the major building blocks in a wireless receiver, the Analog-to-Digital Interface (ADI) provides link and transition between the analog Radio Frequency (RF) frontend and the baseband Digital Signal Processing (DSP) module. The rapid development of the radio technologies raises new design challenges for the receiver ADI implementation. Requirements, such as power consumption optimization, multi-standard compatibility, fast settling capability and wide signal bandwidth capacity, are often encountered in a low voltage ADI design environment. Previous research offers ADI design schemes that emphasize individual merit. A systematic ADI design methodology is, however, not suffciently studied. In this work, the ADI design for two receiver systems are employed as research vehicles to provide solutions for different ADI design issues. A zero-crossing demodulator ADI is designed in the 0.35µm CMOS technology for the Bluetooth receiver to provide fast settling. Architectural level modification improves the process variation and the Local Oscillation (LO) frequency offset immunity of the demodulator. A 16.2dB Signal-to-Noise Ratio (SNR) at 0.1% Bit Error Rate (BER) is achieved with less than 9mW power dissipation in the lab measurement. For ADI in the 802.11b/Bluetooth dual-mode receiver, a configurable time-interleaved pipeline Analog-to-Digital-Converter (ADC) structure is adopted to provide the required multi-standard compatibility. An online digital calibration scheme is also proposed to compensate process variation and mismatching. The prototype chip is fabricated in the 0.25µm BiCMOS technology. Experimentally, an SNR of 60dB and 64dB are obtained under the 802.11b and Bluetooth receiving modes, respectively. The power consumption of the ADI is 20.2mW under the 802.11b receiving mode and 14.8mW under the Bluetooth mode. In this dissertation, each step of the receiver ADI design procedure, from system level optimization to the transistor level implementation and lab measurement, is illustrated in detail. The observations are carefully studied to provide insight on receiver ADI design issues. The ADI design for the Ultra-Wide Band (UWB) receiver is also studied at system level. Potential ADI structure is proposed to satisfy the wide signal bandwidth and high speed requirement for future applications