Simplified model of interconnect layers under a spiral inductor

We demonstrate the feasibility of using effective medium theory to reduce the computational complexity of full-wave models of inductors that are placed over interconnects. Placing inductors over interconnects is one way that designers can tackle the problem of reducing overall chip size, however this has heretofore been a difficult option to evaluate because of the prohibitive memory requirements and run times for detailed simulations of the inductor. Here we replace the interconnects with a homogeneous equivalent layer that mimics their impact on the inductor to within 2% error, but reducing runtime and memory use by 90% or more

Characterization and design of CMOS components for microwave and millimeter wave applications

Ph.DDOCTOR OF PHILOSOPH

A thermal simulation process based on electrical modeling for complex interconnect, packaging, and 3DI structures

To reduce the product development time and achieve first-pass silicon success, fast and accurate estimation of very-large-scale integration (VLSI) interconnect, packaging and 3DI (3D integrated circuits) thermal profiles has become important. Present commercial thermal analysis tools are incapable of handling very complex structures and have integration difficulties with existing design flows. Many analytical thermal models, which could provide fast estimates, are either too specific or oversimplified. This paper highlights a methodology, which exploits electrical resistance solvers for thermal simulation, to allow acquisition of thermal profiles of complex structures with good accuracy and reasonable computation cost. Moreover, a novel accurate closed-form thermal model is developed. The model allows an isotropic or anisotropic equivalent medium to replace the noncritical back-end-of-line (BEOL) regions so that the simulation complexity is dramatically reduced. Using these techniques, this paper introduces the thermal modeling of practical complex VLSI structures to facilitate thermal guideline generation. It also demonstrates the benefits of the proposed anisotropic equivalent medium approximation for real VLSI structures in terms of the accuracy and computational cost. © 2006 IEEE.published_or_final_versio

Numerical analysis of Huygens-like on-chip antennas for mm-wave applications

As we transition to 5G and beyond, the frequencies increase and the efficiency of the antennas becomes a pressing issue. Silicon technologies are preferred when it comes to en masse user equipment production, but the antennas in silicon suffer from high dielectric losses and strong substrate waves coupling. The use of a Huygens source as the antenna element has a potential of decreasing these negative effects, as was demonstrated in several non-silicon PCB designs. In this paper, we investigate if a similar performance enhancement can be achieved in thin back-gated silicon antenna chips. We present a numerical comparison of an electric dipole, a magnetic dipole and a Huygens source antenna at 120 GHz on a lossy silicon substrate sitting on a ground plane. Antennas are defined in MATLAB as distributed currents and imported as near-field sources into CST Microwave Studio. This way we treat the problem in a very general way without regards for any particular physical antenna implementations. Radiation efficiency and gain are shown as functions of substrate thickness. We found that there is no apparent advantage of using a Huygens source over either electric or a magnetic dipole in the described setup. We argue that this result is based on the fact that the Huygens source is derived assuming infinite current sheets at the interface of two infinite homogeneous regions, and propose another definition for a Huygens source in multi-layer structures

Modeling and characterization of on-chip interconnects, inductors and transformers

Ph.DNUS-SUPELEC JOINT PH.D. PROGRAMM

Layout regularity metric as a fast indicator of process variations

Integrated circuits design faces increasing challenge as we scale down due to the increase of the effect of sensitivity to process variations. Systematic variations induced by different steps in the lithography process affect both parametric and functional yields of the designs. These variations are known, themselves, to be affected by layout topologies. Design for Manufacturability (DFM) aims at defining techniques that mitigate variations and improve yield. Layout regularity is one of the trending techniques suggested by DFM to mitigate process variations effect. There are several solutions to create regular designs, like restricted design rules and regular fabrics. These regular solutions raised the need for a regularity metric. Metrics in literature are insufficient for different reasons; either because they are qualitative or computationally intensive. Furthermore, there is no study relating either lithography or electrical variations to layout regularity. In this work, layout regularity is studied in details and a new geometrical-based layout regularity metric is derived. This metric is verified against lithographic simulations and shows good correlation. Calculation of the metric takes only few minutes on 1mm x 1mm design, which is considered fast compared to the time taken by simulations. This makes it a good candidate for pre-processing the layout data and selecting certain areas of interest for lithographic simulations for faster throughput. The layout regularity metric is also compared against a model that measures electrical variations due to systematic lithographic variations. The validity of using the regularity metric to flag circuits that have high variability using the developed electrical variations model is shown. The regularity metric results compared to the electrical variability model results show matching percentage that can reach 80%, which means that this metric can be used as a fast indicator of designs more susceptible to lithography and hence electrical variations

Design and practical realization of polymorphic crosstalk circuits using 65nm TSMC PDK

Title from PDF of title page viewed January 14, 2020Thesis advisor: Mostafizur RahmanVitaIncludes bibliographical references (page 54-56)Thesis (M.S.)--School of Computing and Engineering. University of Missouri--Kansas City. 2019As the technology node scales down, the coupling capacitance between the adjacent metal lines increases. With an increase in this electrostatic coupling, the unwanted signal interference also increases, which is popularly called as Crosstalk. In conventional circuits, the Crosstalk affects either functionality or performance or both. Therefore the Crosstalk is always considered as detrimental to the circuits, and we always try to filter out the Crosstalk noise from signals. Crosstalk Computing Technology tries to astutely turn this unwanted coupling capacitance into computing principle for digital logic gates[1, 2]. The special feature of the crosstalk circuits is its inherent circuit mechanism to build polymorphic logic gates[3]. Our team has previously demonstrated various fundamental polymorphic logic circuits [1-6,16-18]. This thesis shows the design of the large-scale polymorphic crosstalk circuits such as Multiplier–Sorter, Multiplier–Sorter–Adder using the fundamental polymorphic gates, and also analyzes the Power, Performance, and Area (PPA) for these large-scale designs. Similar to the basic and complex polymorphic gates, the functionality of the large-scale polymorphic circuits can also be altered using the control signals. Owing to their multi-functional embodiment in a single circuit, polymorphic circuits find a myriad of useful applications such as reconfigurable system design, resource sharing, hardware security, and fault-tolerant circuit design, etc. [3]. Also, in this thesis, a lot of studies have been done on the variability (PVT analysis) of Crosstalk Circuits. This PVT variation analysis establishes the circuit design requirements in terms of coupling capacitances and fan-in limitation that allows reliable operation of the Crosstalk gates under Process, Voltage and Temperature variations. As an example, I also elaborate on the reason for which the full adder can’t be implemented as a single gate in the crosstalk circuit-style at lower technology nodes. Though we designed a variety of basic and complex logic gates and crosstalk polymorphic gates, the biggest question is “Will these crosstalk gates work reliably on silicon owing to their new circuit requirements and technological challenges?”. Trying to answer the above question, the whole thesis is mainly focused on the physical implementation of the crosstalk gates at 65nm. I will detail the steps that we have performed while designing the crosstalk circuits and their layouts, the challenges we faced while implementing the new circuit techniques using conventional design approaches and PDK, and their solutions, specifically during layout design and verification. The other potential application of crosstalk circuits is in non-linear analog circuits: Analog-to-Digital Converter (ADC) [4], Digital-to-Analog Converter (DAC), and Comparator. In this thesis, I have shown how the deterministic charge summation principle that is used in digital crosstalk gates can also be used to implement the non-linear analog circuits.Introduction -- Polymorphic Crosstalk circuit design -- Practical realization of Crosstalk circuits -- PVT variation analysis -- Difficulties or errors in layout design and full chip details -- Potential miscellaneous applications -- Conclusion and future wor

RF CMOS Oscillators for Modern Wireless Applications

While mobile phones enjoy the largest production volume ever of any consumer electronics products, the demands they place on radio-frequency (RF) transceivers are particularly aggressive, especially on integration with digital processors, low area, low power consumption, while being robust against process-voltage-temperature variations. Since mobile terminals inherently operate on batteries, their power budget is severely constrained. To keep up with the ever increasing data-rate, an ever-decreasing power per bit is required to maintain the battery lifetime. The RF oscillator is the second most power-hungry block of a wireless radio (after power amplifiers). Consequently, any power reduction in an RF oscillator will greatly benefit the overall power efficiency of the cellular transceiver. Moreover, the RF oscillators' purity limits the transceiver performance. The oscillator's phase noise results in power leakage into adjacent channels in a transmit mode and reciprocal mixing in a receive mode. On the other hand, the multi-standard and multi-band transceivers that are now trending demand wide tuning range oscillators. However, broadening the oscillator’s tuning range is usually at the expense of die area (cost) or phase noise. The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable. Technical topics discussed in RF CMOS Oscillators for Modern Wireless Applications include: Design and analysis of low phase-noise class-F oscillators Analyze a technique to reduce 1/f noise up-conversion in the oscillators Design and analysis of low power/low voltage oscillators Wide tuning range oscillators Reliability study of RF oscillators in nanoscale CMO

Feasibility of self-structured current accessed bubble devices in spacecraft recording systems

The self-structured, current aperture approach to magnetic bubble memory is described. Key results include: (1) demonstration that self-structured bubbles (a lattice of strongly interacting bubbles) will slip by one another in a storage loop at spacings of 2.5 bubble diameters, (2) the ability of self-structured bubbles to move past international fabrication defects (missing apertures) in the propagation conductors (defeat tolerance), and (3) moving bubbles at mobility limited speeds. Milled barriers in the epitaxial garnet are discussed for containment of the bubble lattice. Experimental work on input/output tracks, storage loops, gates, generators, and magneto-resistive detectors for a prototype device are discussed. Potential final device architectures are described with modeling of power consumption, data rates, and access times. Appendices compare the self-structured bubble memory from the device and system perspectives with other non-volatile memory technologies