MIDAS: Automated Approach to Design Microwave Integrated Inductors and Transformers on Silicon

The design of modern radiofrequency integrated circuits on silicon operating at microwave and millimeter-waves requires the integration of several spiral inductors and transformers that are not commonly available in the process design-kits of the technologies. In this work we present an auxiliary CAD tool for Microwave Inductor (and transformer) Design Automation on Silicon (MIDAS) that exploits commercial simulators and allows the implementation of an automatic design flow, including three-dimensional layout editing and electromagnetic simulations. In detail, MIDAS allows the designer to derive a preliminary sizing of the inductor (transformer) on the bases of the design entries (specifications). It draws the inductor (transformer) layers for the specific process design kit, including vias and underpasses, with or without patterned ground shield, and launches the electromagnetic simulations, achieving effective design automation with respect to the traditional design flow for RFICs. With the present software suite the complete design time is reduced significantly (typically 1 hour on a PC based on Intel® Pentium® Dual 1.80GHz CPU with 2-GB RAM). Afterwards both the device equivalent circuit and the layout are ready to be imported in the Cadence environment

A 24-GHz SiGe Phased-Array Receiver—LO Phase-Shifting Approach

A local-oscillator phase-shifting approach is introduced to implement a fully integrated 24-GHz phased-array receiver using an SiGe technology. Sixteen phases of the local oscillator are generated in one oscillator core, resulting in a raw beam-forming accuracy of 4 bits. These phases are distributed to all eight receiving paths of the array by a symmetric network. The appropriate phase for each path is selected using high-frequency analog multiplexers. The raw beam-steering resolution of the array is better than 10 [degrees] for a forward-looking angle, while the array spatial selectivity, without any amplitude correction, is better than 20 dB. The overall gain of the array is 61 dB, while the array improves the input signal-to-noise ratio by 9 dB

Analysis of the high frequency substrate noise effects on LC-VCOs

La integració de transceptors per comunicacions de radiofreqüència en CMOS pot quedar seriosament limitada per la interacció entre els seus blocs, arribant a desaconsellar la utilització de un únic dau de silici. El soroll d’alta freqüència generat per certs blocs, com l’amplificador de potencia, pot viatjar pel substrat i amenaçar el correcte funcionament de l’oscil·lador local. Trobem tres raons importants que mostren aquest risc d’interacció entre blocs i que justifiquen la necessitat d’un estudi profund per minimitzar-lo. Les característiques del substrat fan que el soroll d’alta freqüència es propagui m’és fàcilment que el de baixa freqüència. Per altra banda, les estructures de protecció perden eficiència a mesura que la freqüència augmenta. Finalment, el soroll d’alta freqüència que arriba a l’oscil·lador degrada al seu correcte comportament. El propòsit d’aquesta tesis és analitzar en profunditat la interacció entre el soroll d’alta freqüència que es propaga pel substrat i l’oscil·lador amb l’objectiu de poder predir, mitjançant un model, l’efecte que aquest soroll pot tenir sobre el correcte funcionament de l’oscil·lador. Es volen proporcionar diverses guies i normes a seguir que permeti als dissenyadors augmentar la robustesa dels oscil·ladors al soroll d’alta freqüència que viatja pel substrat. La investigació de l’efecte del soroll de substrat en oscil·ladors s’ha iniciat des d’un punt de vista empíric, per una banda, analitzant la propagació de senyals a través del substrat i avaluant l’eficiència d’estructures per bloquejar aquesta propagació, i per altra, determinant l’efecte d’un to present en el substrat en un oscil·lador. Aquesta investigació ha mostrat que la injecció d’un to d’alta freqüència en el substrat es pot propagar fins arribar a l’oscil·lador i que, a causa del ’pulling’ de freqüència, pot modular en freqüència la sortida de l’oscil·lador. A partir dels resultats de l’anàlisi empíric s’ha aportat un model matemàtic que permet predir l’efecte del soroll en l’oscil·lador. Aquest model té el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem. el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem.The integration of transceivers for RF communication in CMOS can be seriously limited by the interaction between their blocks, even advising against using a single silicon die. The high frequency noise generated by some of the blocks, like the power amplifier, can travel through the substrate, reaching the local oscillator and threatening its correct performance. Three important reasons can be stated that show the risk of the single die integration. Noise propagation is easier the higher the frequency. Moreover, the protection structures lose efficiency as the noise frequency increases. Finally, the high frequency noise that reaches the local oscillator degrades its performance. The purpose of this thesis is to deeply analyze the interaction between the high frequency substrate noise and the oscillator with the objective of being able to predict, thanks to a model, the effect that this noise may have over the correct behavior of the oscillator. We want to provide some guidelines to the designers to allow them to increase the robustness of the oscillator to high frequency substrate noise. The investigation of the effect of the high frequency substrate noise on oscillators has started from an empirical point of view, on one hand, analyzing the noise propagation through the substrate and evaluating the efficiency of some structures to block this propagation, and on the other hand, determining the effect on an oscillator of a high frequency noise tone present in the substrate. This investigation has shown that the injection of a high frequency tone in the substrate can reach the oscillator and, due to a frequency pulling effect, it can modulate in frequency the output of the oscillator. Based on the results obtained during the empirical analysis, a mathematical model to predict the effect of the substrate noise on the oscillator has been provided. The main advantage of this model is the fact that it is based on physical parameters of the oscillator and of the noise, allowing to determine the measures that a designer can take to increase the robustness of the oscillator as well as the consequences (trade-offs) that these measures have over its global performance. This model has been compared against both, simulations and real measurements, showing a very high accuracy to predict the effect of the high frequency substrate noise. The usefulness of the presented model as a design tool has been demonstrated in two case studies. Firstly, the conclusions obtained from the model have been applied in the design of an ultra low power consumption 2.5 GHz oscillator robust to the high frequency substrate noise with characteristics which make it compatible with the main communication standards in this frequency band. Finally, the model has been used as an analysis tool to evaluate the cause of the differences, in terms of performance degradation due to substrate noise, measured in two 60 GHz oscillators with two different tank inductor shielding strategies, floating and grounded. The model has determined that the robustness differences are caused by the improvement in the tank quality factor and in the oscillation amplitude and no by an increased isolation between the tank and the substrate. The model has shown to be valid and very accurate even in these extreme frequency range.Postprint (published version

A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-μm CMOS

A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50-[ohm] input and output matching is demonstrated in 0.18-μm CMOS. The use of substrate-shielded coplanar waveguide structures for matching networks results in low passive loss and small die size. Simple circuit techniques based on stability criteria derived result in an unconditionally stable amplifier. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5-dBm with a 3-dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8-V supply. The chip area is 1.26 mm^2

Channel Characterization for Chip-scale Wireless Communications within Computing Packages

Wireless Network-on-Chip (WNoC) appears as a promising alternative to conventional interconnect fabrics for chip-scale communications. WNoC takes advantage of an overlaid network composed by a set of millimeter-wave antennas to reduce latency and increase throughput in the communication between cores. Similarly, wireless inter-chip communication has been also proposed to improve the information transfer between processors, memory, and accelerators in multi-chip settings. However, the wireless channel remains largely unknown in both scenarios, especially in the presence of realistic chip packages. This work addresses the issue by accurately modeling flip-chip packages and investigating the propagation both its interior and its surroundings. Through parametric studies, package configurations that minimize path loss are obtained and the trade-offs observed when applying such optimizations are discussed. Single-chip and multi-chip architectures are compared in terms of the path loss exponent, confirming that the amount of bulk silicon found in the pathway between transmitter and receiver is the main determinant of losses.Comment: To be presented 12th IEEE/ACM International Symposium on Networks-on-Chip (NOCS 2018); Torino, Italy; October 201

Compact modelling in RF CMOS technology

With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years. Today, the standard CMOS technology has become a popular choice for realizing radio frequency (RF) applications. The focus of the thesis is on device compact modelling methodologies in RF CMOS. Compact models oriented to integrated circuit (ICs) computer automatic design (CAD) are the key component of a process design kit (PDK) and the bridge between design houses and foundries. In this work, a novel substrate model is proposed for accurately characterizing the behaviour of RF-MOSFETs with deep n-wells (DNW). A simple test structure is presented to directly access the substrate parasitics from two-port measurements in DNWs. The most important passive device in RFIC design in CMOS is the spiral inductor. A 1-pi model with a novel substrate network is proposed to characterize the broadband loss mechanisms of spiral inductors. Based on the proposed 1-pi model, a physics-originated fully-scalable 2-pi model and model parameter extraction methodology are also presented for spiral inductors in this work. To test and verify the developed active and passive device models and model parameter extraction methods, a series of RF-MOSFETs and planar on-chip spiral inductors with different geometries manufactured by employing standard RF CMOS processes were considered. Excellent agreement between the measured and the simulated results validate the compact models and modelling technologies developed in this work

A reconfigurable 60GHz receiver : providing robustness to process variations

The problems associated with process-induced variability and other challenges of 60GHz circuit design and measurement are treated in this thesis. A system-level analysis is performed on a generic RF receiver. For doing that, first, bit error rate (BER) is considered as a figure of merit representing the overall performance of the Receiver. Then, each stage of the receiver is described by three parameters: voltage gain, noise, and nonlinearity which are prone to variation due to process spread. The variation of these parameters represents all lower-level sources of variability. Since bit error rate (BER), as a major performance measure of the receiver, is a direct function of the noise and distortion, the contribution of each block to the overall noise plus distortion (NPD) is analyzed, which opens the way for minimization of the sensitivity of the NPD to the performance variation of individual stages. It is shown that the first order sensitivities of NPD to the individual gains of the building blocks can all be made zero. Its second order sensitivity to the gains of the building blocks can be reduced. Its sensitivity to noise and nonlinearity of an individual building block can be reduced, but at the cost of that of other blocks; its sensitivity to noise and nonlinearity cannot be reduced over the whole system. Three design approaches are proposed, analyzed and compared. Statistical and corner simulations are performed to confirm the validity of the proposed guidelines showing significant improvement in the yield of the designs. Applying the analysis to a zero-IF three-stage 60 GHz receiver shows a significant improvement in the design yield, by nullifying the first order sensitivities of the overall performance to the individual gains of the blocks. Reduction of the second order sensitivity of the NPD to the gain of individual stages, by keeping the contribution factor of all the stages below one, results in further improvements in the design yield. The conventional optimum-power design methodology has been modified in a way that it nullifies the first order sensitivities of NPD to the individual gains of all the stages. It is shown that for simultaneous power optimization and reduced second-order sensitivity to the gains of the blocks less power hungry building blocks must be in the rear stages of the receiver and more power hungry ones in the front. After identifying the limitations of a pure system-level approach, i.e., inability to suppress the sensitivity of the overall performance to the noise and nonlinearity of all the blocks, the focus is shifted towards circuit-level methods by providing re-configurability to some RF circuits. A receiver is designed with good noise and nonlinearity performance and with accumulated noise and nonlinearity distortion contribution in its last stage (mixer). As a result, the overall performance of the receiver is more sensitive to the performance variations of the mixer. Simulations show that it is possible to correct the overall receiver performance degradations resulting from process variations by just tuning the performance of the mixer. Furthermore, a tunable mixer is presented for minimizing the IMD2 across a wide IF bandwidth. It is demonstrated both in theory and measurement that a presented three-dimensional tuning method is beneficial for wideband cancellation of second order intermodulation distortions (IMD2) in a zero-IF downconverter. A 60GHz zero-IF mixer is designed and measured on-wafer to show that the proposed tuning mechanism can simultaneously suppress IMD2 tones across the whole 1GHz IF band. To address the challenges of 60GHz circuit design, a design methodology is utilized which serves to properly model the parasitic effects and improve the predictability of the performance. The parasitic effects due to layout, which are more influential at high frequencies, are taken into account by performing automatic RC extraction and manual L extraction. The long signal lines are modeled with distributed RLC networks. The problem of substrate losses is addressed by using patterned ground shields in inductors and transmission lines. The cross-talk issue is treated by using distributed meshed ground lines, decoupled DC lines, and grounded substrate contacts around sensitive RF components. However, in practice, it is observed that accurate simulation of all the effects is sometimes very time consuming or even infeasible. For instance electromagnetic simulation of a transformer in the presence of all the dummy metals is beyond the computational capability of existing EM-simulators. Three 60GHz receiver components are analyzed, designed, and measured with good performance. A two-stage fully integrated 60 GHz differential low noise amplifier is implemented in a CMOS 65 nm bulk technology with superior noise figure compared to state-of-the-art mm-wave LNAs. A doublebalanced 60 GHz mixer with ac-coupled RF input is designed and measured with a series capacitor in the input RF path to suppress the low frequency second order intermodulation distortions generated in the previous stage. A quadrature 60 GHz VCO is presented which exhibits a comparable level of performance, in particular very good phase noise, to state-of-the-art single-phase VCOs, despite the additional challenges and limitations imposed by the quadrature topology. The on-wafer measurements on the 60GHz circuits designed in this work are performed using a waveguide-based measurement setup. The fixed waveguide structures, specially provided for the probe station, serve for the robustness of the setup as they circumvent the need for cables, which are by nature difficult to rigidify, in the vicinity of the probes. Taking advantage of magic- Ts, it is possible to measure differential mm-wave circuits with a two-port network analyzer rather than using a much more expensive four-port one. Noise, s-parameter, and phase noise measurements are performed using the mentioned setups