A new Method for the Analysis of Radiation-induced Effects in 3D VLSI Face-to-Back LUTs

In recent years, three-dimensional IC (3D IC) has gained much attention as a promising approach to increase IC performance due to their several advantages in terms of integration density, power dissipation and achievable clock frequencies. However, the reliability of 3D ICs regarding soft errors induced by radiation is not investigated yet. In this work, we propose a method for evaluating the sensitivity of 3D ICs to Single Event Transient induced by Heavy Ions. The flow starts with identifying the characteristics of the generated transient pulses with respect to the radiation profile and 3D layout of the design. Secondly, our method provides a Dynamic Error Rate using a Simulation-based Fault Injection environment. Experimental results achieved applying the approach on a 15nm 3D configurable Look-Up-Table (LUT) designed on two tiers demonstrated the feasibility of the method, showing the vulnerability characterization of four different functional configurations using eight different types of heavy ions

Accurate statistical circuit simulation in the presence of statistical variability

Semiconductor device performance variation due to the granular nature of charge and matter has become a key problem in the semiconductor industry. The main sources of this ‘statistical’ variability include random discrete dopants (RDD), line edge roughness (LER) and metal gate granularity (MGG). These variability sources have been studied extensively, however a methodology has not been developed to accurately represent this variability at a circuit and system level. In order to accurately represent statistical variability in real devices the GSS simulation toolchain was utilised to simulate 10,000 20/22nm n- and p-channel transistors including RDD, LER and MGG variability sources. A statistical compact modelling methodology was developed which accurately captured the behaviour of the simulated transistors, and produced compact model parameter distributions suitable for advanced compact model generation strategies like PCA and NPM. The resultant compact model libraries were then utilised to evaluate the impact of statistical variability on SRAM design, and to quantitatively evaluate the difference between accurate compact model generation using NPM with the Gaussian VT methodology. Over 5 million dynamic write simulations were performed, and showed that at advanced technology nodes, statistical variability cannot be accurately represented using Gaussian VT . The results also show that accurate modelling techniques can help reduced design margins by elimiating some of the pessimism of standard variability modelling approaches

Device and circuit-level models for carbon nanotube and graphene nanoribbon transistors

Metal-oxide semiconductor field-effect transistor (MOSFET) scaling throughout the years has enabled us to pack million of MOS transistors on a single chip to keep in pace with Moore’s Law. After forty years of advances in integrated circuit (IC) technology, the scaling of silicon (Si) MOSFET has entered the nanometer dimension with the introduction of 90 nm high volume manufacturing in 2004. The latest technological advancement has led to a low power, high-density and high-speed generation of processor. Nevertheless, the scaling of the Si MOSFET below 22 nm may soon meet its’ fundamental physical limitations. This threshold makes the possible use of novel devices and structures such as carbon nanotube field-effect transistors (CNTFETs) and graphene nanoribbon field-effect transistors (GNRFETs) for future nanoelectronics. The investigation explores the potential of these amazing carbon structures that exceed MOSFET capabilities in term of speed, scalability and power consumption. The research findings demonstrate the potential integration of carbon based technology into existing ICs. In particular, a simulation program with integrated circuit emphasis (SPICE) model for CNTFET and GNRFET in digital logic applications is presented. The device performance of these circuit models and their design layout are then compared to 45 nm and 90 nm MOSFET for benchmarking. It is revealed through the investigation that CNT and GNR channels can overcome the limitations imposed by Si channel length scaling and associated short channel effects while consuming smaller channel area at higher current density

Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

Circuit Optimisation using Device Layout Motifs

Circuit designers face great challenges as CMOS devices continue to scale to nano dimensions, in particular, stochastic variability caused by the physical properties of transistors. Stochastic variability is an undesired and uncertain component caused by fundamental phenomena associated with device structure evolution, which cannot be avoided during the manufacturing process. In order to examine the problem of variability at atomic levels, the 'Motif' concept, defined as a set of repeating patterns of fundamental geometrical forms used as design units, is proposed to capture the presence of statistical variability and improve the device/circuit layout regularity. A set of 3D motifs with stochastic variability are investigated and performed by technology computer aided design simulations. The statistical motifs compact model is used to bridge between device technology and circuit design. The statistical variability information is transferred into motifs' compact model in order to facilitate variation-aware circuit designs. The uniform motif compact model extraction is performed by a novel two-step evolutionary algorithm. The proposed extraction method overcomes the drawbacks of conventional extraction methods of poor convergence without good initial conditions and the difficulty of simulating multi-objective optimisations. After uniform motif compact models are obtained, the statistical variability information is injected into these compact models to generate the final motif statistical variability model. The thesis also considers the influence of different choices of motif for each device on circuit performance and its statistical variability characteristics. A set of basic logic gates is constructed using different motif choices. Results show that circuit performance and variability mitigation can benefit from specific motif permutations. A multi-stage optimisation methodology is introduced, in which the processes of optimisation are divided into several stages. Benchmark circuits show the efficacy of the proposed methods. The results presented in this thesis indicate that the proposed methods are able to provide circuit performance improvements and are able to create circuits that are more robust against variability

Sincronização em sistemas integrados a alta velocidade

Doutoramento em Engenharia ElectrotécnicaA distribui ção de um sinal relógio, com elevada precisão espacial (baixo skew) e temporal (baixo jitter ), em sistemas sí ncronos de alta velocidade tem-se revelado uma tarefa cada vez mais demorada e complexa devido ao escalonamento da tecnologia. Com a diminuição das dimensões dos dispositivos e a integração crescente de mais funcionalidades nos Circuitos Integrados (CIs), a precisão associada as transições do sinal de relógio tem sido cada vez mais afectada por varia ções de processo, tensão e temperatura. Esta tese aborda o problema da incerteza de rel ogio em CIs de alta velocidade, com o objetivo de determinar os limites do paradigma de desenho sí ncrono. Na prossecu ção deste objectivo principal, esta tese propõe quatro novos modelos de incerteza com âmbitos de aplicação diferentes. O primeiro modelo permite estimar a incerteza introduzida por um inversor est atico CMOS, com base em parâmetros simples e su cientemente gen éricos para que possa ser usado na previsão das limitações temporais de circuitos mais complexos, mesmo na fase inicial do projeto. O segundo modelo, permite estimar a incerteza em repetidores com liga ções RC e assim otimizar o dimensionamento da rede de distribui ção de relógio, com baixo esfor ço computacional. O terceiro modelo permite estimar a acumula ção de incerteza em cascatas de repetidores. Uma vez que este modelo tem em considera ção a correla ção entre fontes de ruí do, e especialmente util para promover t ecnicas de distribui ção de rel ogio e de alimentação que possam minimizar a acumulação de incerteza. O quarto modelo permite estimar a incerteza temporal em sistemas com m ultiplos dom ínios de sincronismo. Este modelo pode ser facilmente incorporado numa ferramenta autom atica para determinar a melhor topologia para uma determinada aplicação ou para avaliar a tolerância do sistema ao ru ído de alimentação. Finalmente, usando os modelos propostos, são discutidas as tendências da precisão de rel ogio. Conclui-se que os limites da precisão do rel ogio são, em ultima an alise, impostos por fontes de varia ção dinâmica que se preveem crescentes na actual l ogica de escalonamento dos dispositivos. Assim sendo, esta tese defende a procura de solu ções em outros ní veis de abstração, que não apenas o ní vel f sico, que possam contribuir para o aumento de desempenho dos CIs e que tenham um menor impacto nos pressupostos do paradigma de desenho sí ncrono.Distributing a the clock simultaneously everywhere (low skew) and periodically everywhere (low jitter) in high-performance Integrated Circuits (ICs) has become an increasingly di cult and time-consuming task, due to technology scaling. As transistor dimensions shrink and more functionality is packed into an IC, clock precision becomes increasingly a ected by Process, Voltage and Temperature (PVT) variations. This thesis addresses the problem of clock uncertainty in high-performance ICs, in order to determine the limits of the synchronous design paradigm. In pursuit of this main goal, this thesis proposes four new uncertainty models, with di erent underlying principles and scopes. The rst model targets uncertainty in static CMOS inverters. The main advantage of this model is that it depends only on parameters that can easily be obtained. Thus, it can provide information on upcoming constraints very early in the design stage. The second model addresses uncertainty in repeaters with RC interconnects, allowing the designer to optimise the repeater's size and spacing, for a given uncertainty budget, with low computational e ort. The third model, can be used to predict jitter accumulation in cascaded repeaters, like clock trees or delay lines. Because it takes into consideration correlations among variability sources, it can also be useful to promote oorplan-based power and clock distribution design in order to minimise jitter accumulation. A fourth model is proposed to analyse uncertainty in systems with multiple synchronous domains. It can be easily incorporated in an automatic tool to determine the best topology for a given application or to evaluate the system's tolerance to power-supply noise. Finally, using the proposed models, this thesis discusses clock precision trends. Results show that limits in clock precision are ultimately imposed by dynamic uncertainty, which is expected to continue increasing with technology scaling. Therefore, it advocates the search for solutions at other abstraction levels, and not only at the physical level, that may increase system performance with a smaller impact on the assumptions behind the synchronous design paradigm

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems