3-D TCAD Monte Carlo device simulator : state-of-the-art FinFET simulation

This work presents a comprehensive description of an in-house 3D Monte Carlo device simulator for physical mod-eling of FinFETs. The simulator was developed to consider var-iability effects properly and to be able to study deeply scaled devices operating in the ballistic and quasi-ballistic regimes. The impact of random dopants and trapped charges in the die-lectric is considered by treating electron-electron and electron-ion interactions in real-space. Metal gate granularity is in-cluded through the gate work functionvariation. The capability to evaluate these effects in nanometer3D devices makes the pre-sented simulator unique, thus advancing the state-of-the-art. The phonon scattering mechanisms, used to model the transport of electrons in puresilicon material system, were validated by comparing simulated drift velocities withavailable experi-mental data. The proper behavior of the device simulator is dis-played in a series of studies of the electric potentialin the device, the electron density, the carrier's energy and velocity, and the Id-Vg and Id-Vd curves

First principles numerical model of avalanche-induced arc discharges in electron-irradiated dielectrics

The model consists of four phases: single electron dynamics, single electron avalanche, negative streamer development, and tree formation. Numerical algorithms and computer code implementations are presented for the first three phases. An approach to developing a code description of fourth phase is discussed. Numerical results are presented for a crude material model of Teflon

Unsteady axisymmetric flow by the method of discrete vortices

Imperial Users onl

Numerical Boundary Condition Procedures

Topics include numerical procedures for treating inflow and outflow boundaries, steady and unsteady discontinuous surfaces, far field boundaries, and multiblock grids. In addition, the effects of numerical boundary approximations on stability, accuracy, and convergence rate of the numerical solution are discussed