Ring oscillator clocks and margins

How much margin do we have to add to the delay lines of a bundled-data circuit? This paper is an attempt to give a methodical answer to this question, taking into account all sources of variability and the existing EDA machinery for timing analysis and sign-off. The paper is based on the study of the margins of a ring oscillator that substitutes a PLL as clock generator. A timing model is proposed that shows that a 12% margin for delay lines can be sufficient to cover variability in a 65nm technology. In a typical scenario, performance and energy improvements between 15% and 35% can be obtained by using a ring oscillator instead of a PLL. The paper concludes that a synchronous circuit with a ring oscillator clock shows similar benefits in performance and energy as those of bundled-data asynchronous circuits.Peer ReviewedPostprint (author's final draft

Modeling the Interdependences between Voltage Fluctuation and BTI Aging

With technology scaling, the susceptibility of circuits to different reliability degradations is steadily increasing. Aging in transistors due to bias temperature instability (BTI) and voltage fluctuation in the power delivery network of circuits due to IR-drops are the most prominent. In this paper, we are reporting for the first time that there are interdependences between voltage fluctuation and BTI aging that are nonnegligible. Modeling and investigating the joint impact of voltage fluctuation and BTI aging on the delay of circuits, while remaining compatible with the existing standard design flow, is indispensable in order to answer the vital question, “what is an efficient (i.e., small, yet sufficient) timing guardband to sustain the reliability of circuit for the projected lifetime?” This is, concisely, the key goal of this paper. Achieving that would not be possible without employing a physics-based BTI model that precisely describes the underlying generation and recovery mechanisms of defects under arbitrary stress waveforms. For this purpose, our model is validated against varied semiconductor measurements covering a wide range of voltage, temperature, frequency, and duty cycle conditions. To bring reliability awareness to existing EDA tool flows, we create standard cell libraries that contain the delay information of cells under the joint impact of aging and IR-drop. Our libraries can be directly deployed within the standard design flow because they are compatible with existing commercial tools (e.g., Synopsys and Cadence). Hence, designers can leverage the mature algorithms of these tools to accurately estimate the required timing guardbands for any circuit despite its complexity. Our investigation demonstrates that considering aging and IR-drop effects independently, as done in the state of the art, leads to employing insufficient and thus unreliable guardbands because of the nonnegligible (on average 15% and up to 25%) underestimations. Importantly, considering interdependences between aging and IR-drop does not only allow correct guardband estimations, but it also results in employing more efficient guardbands

Statistical circuit simulations - from ‘atomistic’ compact models to statistical standard cell characterisation

This thesis describes the development and application of statistical circuit simulation methodologies to analyse digital circuits subject to intrinsic parameter fluctuations. The specific nature of intrinsic parameter fluctuations are discussed, and we explain the crucial importance to the semiconductor industry of developing design tools which accurately account for their effects. Current work in the area is reviewed, and three important factors are made clear: any statistical circuit simulation methodology must be based on physically correct, predictive models of device variability; the statistical compact models describing device operation must be characterised for accurate transient analysis of circuits; analysis must be carried out on realistic circuit components. Improving on previous efforts in the field, we posit a statistical circuit simulation methodology which accounts for all three of these factors. The established 3-D Glasgow atomistic simulator is employed to predict electrical characteristics for devices aimed at digital circuit applications, with gate lengths from 35 nm to 13 nm. Using these electrical characteristics, extraction of BSIM4 compact models is carried out and their accuracy in performing transient analysis using SPICE is validated against well characterised mixed-mode TCAD simulation results for 35 nm devices. Static d.c. simulations are performed to test the methodology, and a useful analytic model to predict hard logic fault limitations on CMOS supply voltage scaling is derived as part of this work. Using our toolset, the effect of statistical variability introduced by random discrete dopants on the dynamic behaviour of inverters is studied in detail. As devices scaled, dynamic noise margin variation of an inverter is increased and higher output load or input slew rate improves the noise margins and its variation. Intrinsic delay variation based on CV/I delay metric is also compared using ION and IEFF definitions where the best estimate is obtained when considering ION and input transition time variations. Critical delay distribution of a path is also investigated where it is shown non-Gaussian. Finally, the impact of the cell input slew rate definition on the accuracy of the inverter cell timing characterisation in NLDM format is investigated

Characterization and management of voltage noise in multi-core, multi-threaded processors

textReliability is one of the important issues of recent microprocessor design. Processors must provide correct behavior as users expect, and must not fail at any time. However, unreliable operation can be caused by excessive supply voltage fluctuations due to an inductive part in a microprocessor power distribution network. This voltage fluctuation issue is referred to as inductive or di/dt noise, and requires thorough analysis and sophisticated design solutions. This dissertation proposes an automated stressmark generation framework to characterize di/dt noise effect, and suggests a practical solution for management of di/dt effects while achieving performance and energy goals. First, the di/dt noise issue is analyzed from theory to a practical view. Inductance is a parasitic part in power distribution network for microprocessor, and its characteristics such as resonant frequencies are reviewed. Then, it is shown that supply voltage fluctuation from resonant behavior is much harmful than single event voltage fluctuations. Voltage fluctuations caused by standard benchmarks such as SPEC CPU2006, PARSEC, Linpack, etc. are studied. Next, an AUtomated DI/dT stressmark generation framework, referred to as AUDIT, is proposed to identify maximum voltage droop in a microprocessor power distribution network. The di/dt stressmark generated from AUDIT framework is an instruction sequence, which draws periodic high and low current pulses that maximize voltage fluctuations including voltage droops. AUDIT uses a Genetic Algorithm in scheduling and optimizing candidate instruction sequences to create a maximum voltage droop. In addition, AUDIT provides with both simulation and hardware measurement methods for finding maximum voltage droops in different design and verification stages of a processor. Failure points in hardware due to voltage droops are analyzed. Finally, a hardware technique, floating-point (FP) issue throttling, is examined, which provides a reduction in worst case voltage droop. This dissertation shows the impact of floating point throttling on voltage droop, and translates this reduction in voltage droop to an increase in operating frequency because additional guardband is no longer required to guard against droops resulting from heavy floating point usage. This dissertation presents two techniques to dynamically determine when to tradeoff FP throughput for reduced voltage margin and increased frequency. These techniques can work in software level without any modification of existing hardware.Electrical and Computer Engineerin

A Unified Approach for Performance Degradation Analysis from Transistor to Gate Level

In this paper, we present an extensive analysis of the performance degradation in MOSFET based circuits. The physical effects that we consider are the random dopant fluctuation (RDF), the oxide thickness fluctuation (OTF) and the Hot-carrier-Instability (HCI). The work that we propose is based on two main key points: First, the performance degradation is studied considering BULK, Silicon-On-Insulator (SOI) and Double Gate (DG) MOSFET technologies. The analysis considers technology nodes from 45nm to 11nm. For the HCI effect we consider also the time-dependent evolution of the parameters of the circuit. Second, the analysis is performed from transistor level to gate level. Models are used to evaluate the variation of transistors key parameters, and how these variation affects performance at gate level as well.The work here presented was obtained using TAMTAMS Web, an open and publicly available framework for analysis of circuits based on transistors. The use of TAMTAMS Web greatly increases the value of this work, given that the analysis can be easily extended and improved in both complexity and depth

Imperfection-Aware Design of CNFET Digital VLSI Circuits

Carbon nanotube field-effect transistor (CNFET) is one of the promising candidates as extensions to silicon CMOS devices. The CNFET, which is a 1-D structure with a near-ballistic transport capability, can potentially offer excellent device characteristics and order-of-magnitude better energy-delay product over standard CMOS devices. Significant challenges in CNT synthesis prevent CNFETs today from achieving such ideal benefits. CNT density variation and metallic CNTs are the dominant type of CNT variations/imperfections that cause performance variation, large static power consumption, and yield degradation. We present an imperfection-aware design technique for CNFET digital VLSI circuits by: 1) Analytical models that are developed to analyze and quantify the effects of CNT density variation on device characteristics, gate and system levels delays. The analytical models, which were validated by comparison to real experimental/simulation data, enables us to examine the space of CNFET combinational, sequential and memory cells circuits to minimize delay variations. Using these model, we drive CNFET processing and circuit design guidelines to manage/overcome CNT density variation. 2) Analytical models that are developed to analyze the effects of metallic CNTs on device characteristics, gate and system levels delay and power consumption. Using our presented analytical models, which are again validated by comparison with simulation data, it is shown that the static power dissipation is a more critical issue than the delay and the dynamic power of CNFET circuits in the presence of m-CNTs. 3) CNT density variation and metallic CNTs can result in functional failure of CNFET circuits. The complete and compact model for CNFET probability of failure that consider CNT density variation and m-CNTs is presented. This analytical model is applied to analyze the logical functional failures. The presented model is extended to predict opportunities and limitations of CNFET technology at todays Gigascale integration and beyond.\u2

Analysis and Mitigation of Remote Side-Channel and Fault Attacks on the Electrical Level

In der fortlaufenden Miniaturisierung von integrierten Schaltungen werden physikalische Grenzen erreicht, wobei beispielsweise Einzelatomtransistoren eine mögliche untere Grenze für Strukturgrößen darstellen. Zudem ist die Herstellung der neuesten Generationen von Mikrochips heutzutage finanziell nur noch von großen, multinationalen Unternehmen zu stemmen. Aufgrund dieser Entwicklung ist Miniaturisierung nicht länger die treibende Kraft um die Leistung von elektronischen Komponenten weiter zu erhöhen. Stattdessen werden klassische Computerarchitekturen mit generischen Prozessoren weiterentwickelt zu heterogenen Systemen mit hoher Parallelität und speziellen Beschleunigern. Allerdings wird in diesen heterogenen Systemen auch der Schutz von privaten Daten gegen Angreifer zunehmend schwieriger. Neue Arten von Hardware-Komponenten, neue Arten von Anwendungen und eine allgemein erhöhte Komplexität sind einige der Faktoren, die die Sicherheit in solchen Systemen zur Herausforderung machen. Kryptografische Algorithmen sind oftmals nur unter bestimmten Annahmen über den Angreifer wirklich sicher. Es wird zum Beispiel oft angenommen, dass der Angreifer nur auf Eingaben und Ausgaben eines Moduls zugreifen kann, während interne Signale und Zwischenwerte verborgen sind. In echten Implementierungen zeigen jedoch Angriffe über Seitenkanäle und Faults die Grenzen dieses sogenannten Black-Box-Modells auf. Während bei Seitenkanalangriffen der Angreifer datenabhängige Messgrößen wie Stromverbrauch oder elektromagnetische Strahlung ausnutzt, wird bei Fault Angriffen aktiv in die Berechnungen eingegriffen, und die falschen Ausgabewerte zum Finden der geheimen Daten verwendet. Diese Art von Angriffen auf Implementierungen wurde ursprünglich nur im Kontext eines lokalen Angreifers mit Zugriff auf das Zielgerät behandelt. Jedoch haben bereits Angriffe, die auf der Messung der Zeit für bestimmte Speicherzugriffe basieren, gezeigt, dass die Bedrohung auch durch Angreifer mit Fernzugriff besteht. In dieser Arbeit wird die Bedrohung durch Seitenkanal- und Fault-Angriffe über Fernzugriff behandelt, welche eng mit der Entwicklung zu mehr heterogenen Systemen verknüpft sind. Ein Beispiel für neuartige Hardware im heterogenen Rechnen sind Field-Programmable Gate Arrays (FPGAs), mit welchen sich fast beliebige Schaltungen in programmierbarer Logik realisieren lassen. Diese Logik-Chips werden bereits jetzt als Beschleuniger sowohl in der Cloud als auch in Endgeräten eingesetzt. Allerdings wurde gezeigt, wie die Flexibilität dieser Beschleuniger zur Implementierung von Sensoren zur Abschätzung der Versorgungsspannung ausgenutzt werden kann. Zudem können durch eine spezielle Art der Aktivierung von großen Mengen an Logik Berechnungen in anderen Schaltungen für Fault Angriffe gestört werden. Diese Bedrohung wird hier beispielsweise durch die Erweiterung bestehender Angriffe weiter analysiert und es werden Strategien zur Absicherung dagegen entwickelt

Belle II Technical Design Report

The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been proposed. A new international collaboration Belle-II, is being formed. The Technical Design Report presents physics motivation, basic methods of the accelerator upgrade, as well as key improvements of the detector.Comment: Edited by: Z. Dole\v{z}al and S. Un

Architectural level delay and leakage power modelling of manufacturing process variation

PhD ThesisThe effect of manufacturing process variations has become a major issue regarding the estimation of circuit delay and power dissipation, and will gain more importance in the future as device scaling continues in order to satisfy market place demands for circuits with greater performance and functionality per unit area. Statistical modelling and analysis approaches have been widely used to reflect the effects of a variety of variational process parameters on system performance factor which will be described as probability density functions (PDFs). At present most of the investigations into statistical models has been limited to small circuits such as a logic gate. However, the massive size of present day electronic systems precludes the use of design techniques which consider a system to comprise these basic gates, as this level of design is very inefficient and error prone. This thesis proposes a methodology to bring the effects of process variation from transistor level up to architectural level in terms of circuit delay and leakage power dissipation. Using a first order canonical model and statistical analysis approach, a statistical cell library has been built which comprises not only the basic gate cell models, but also more complex functional blocks such as registers, FIFOs, counters, ALUs etc. Furthermore, other sensitive factors to the overall system performance, such as input signal slope, output load capacitance, different signal switching cases and transition types are also taken into account for each cell in the library, which makes it adaptive to an incremental circuit design. The proposed methodology enables an efficient analysis of process variation effects on system performance with significantly reduced computation time compared to the Monte Carlo simulation approach. As a demonstration vehicle for this technique, the delay and leakage power distributions of a 2-stage asynchronous micropipeline circuit has been simulated using this cell library. The experimental results show that the proposed method can predict the delay and leakage power distribution with less than 5% error and at least 50,000 times faster computation time compare to 5000-sample SPICE based Monte Carlo simulation. The methodology presented here for modelling process variability plays a significant role in Design for Manufacturability (DFM) by quantifying the direct impact of process variations on system performance. The advantages of being able to undertake this analysis at a high level of abstraction and thus early in the design cycle are two fold. First, if the predicted effects of process variation render the circuit performance to be outwith specification, design modifications can be readily incorporated to rectify the situation. Second, knowing what the acceptable limits of process variation are to maintain design performance within its specification, informed choices can be made regarding the implementation technology and manufacturer selected to fabricate the design