SRAM Alpha-SER Estimation From Word-Line Voltage Margin Measurements: Design Architecture and Experimental Results

Experimental results from a 65 nm CMOS commercial technology SRAM test chip reveal a linear correlation between a new electrical parameter -- the word-line voltage margin (VWLVM) -- and the measured circuit alpha-SER. Additional experiments show that no other memory cell electrical robustness-related parameters exhibit such correlation. The technique proposed is based on correlating the VWLVM to the SER measured on a small number of circuit samples to determine the correlation parameters. Then, the remaining non-irradiated circuits SER is determined from electrical measurements (VWLVM) without the need of additional radiation experiments. This method represents a significant improvement in time and cost, while simplifying the SER-determination methods since most of the circuits do not require irradiation. The technique involves a minor memory design modification that does not degrade circuit performance, while circuit area increase is negligible.Comment: 6 pages, 10 figure

Development of a high capacity bubble domain memory element and related epitaxial garnet materials for application in spacecraft data recorders. Item 2: The optimization of material-device parameters for application in bubble domain memory elements for spacecraft data recorders

Bubble domain materials and devices are discussed. One of the materials development goals was a materials system suitable for operation of 16 micrometer period bubble domain devices at 150 kHz over the temperature range -10 C to +60 C. Several material compositions and hard bubble suppression techniques were characterized and the most promising candidates were evaluated in device structures. The technique of pulsed laser stroboscopic microscopy was used to characterize bubble dynamic properties and device performance at 150 kHz. Techniques for large area LPE film growth were developed as a separate task. Device studies included detector optimization, passive replicator design and test and on-chip bridge evaluation. As a technology demonstration an 8 chip memory cell was designed, tested and delivered. The memory elements used in the cell were 10 kilobit serial registers

The 30/20 GHz flight experiment system, phase 2. Volume 2: Experiment system description

A detailed technical description of the 30/20 GHz flight experiment system is presented. The overall communication system is described with performance analyses, communication operations, and experiment plans. Hardware descriptions of the payload are given with the tradeoff studies that led to the final design. The spacecraft bus which carries the payload is discussed and its interface with the launch vehicle system is described. Finally, the hardwares and the operations of the terrestrial segment are presented

Design of an integrated airframe/propulsion control system architecture

The design of an integrated airframe/propulsion control system architecture is described. The design is based on a prevalidation methodology that uses both reliability and performance. A detailed account is given for the testing associated with a subset of the architecture and concludes with general observations of applying the methodology to the architecture

Energy Reduction Techniques to Increase Battery Life for Electronic Sensor Nodes

Preserving battery life in duty-cycled sensor nodes requires minimizing energy use in the active region. Lowering the power supply of CMOS gates down into sub-threshold mode is a good way to decrease energy. In this work, a unique technique to control the current in CMOS gates to reliably operate them in sub-threshold mode is described. Compared to the current state-of-theart for running digital gates in the sub-threshold regime, this work is often superior in its lack of complexity and in reduced variance in delay caused by process variations. In addition to presenting the design considerations, a demonstration of a complete digital design flow is given using the custom gates. An AES128 encryption/decryption engine is designed using the aforementioned digital flow in a commercial 180nm process. The resulting design has a ratio of maximum to minimum frequency variation over corners of only 50% with a 0.3V power supply where the same ratio with standard CMOS gates biased under the same supply voltage is 5600%. In addition, the custom gates are used to design a Wallace tree multiplier in an SOI 45nm process that is fully functional with an optimum energy power supply level of 0.34V with a typical operating frequency of 8 MHz having a variation over corners of 80%. For a proof of concept memory chip designed in this work, the architecture uses a logiccompatible CMOS process particularly suitable for embedded applications. The differential pair construct causes the read and refresh power to be independent of any process parameter including the within-die threshold voltage. The current stop feature keeps the read voltage transition low to further minimize read power. The bit cell operates in both single bit BASE2 and multi-bit BASE4 modes. An expression for the read signal was verified with bit cell simulations. These simulations also compare the performance impact of threshold voltage variance in the architecture with a standard gain cell. A DRAM bit cell array was fabricated in the XFab 180nm CMOS process. Measured waveforms closely match theoretical results obtained from a system simulation. The silicon retention time was measured at room temperature and is greater than 150 ms in BASE2 mode and greater than 75 ms in BASE4 mode. 180nm, 25C analysis predicts 0.8uW/Mbit refresh power at 630 MHz, the lowest in the literature. Further: the memory bit cell architecture presented here has a refresh power delay product several times lower than any other published architecture. The current controlled memory architecture in this work improves or overcomes the drawbacks of the 1T1C and gain cell memory architectures. A current controlled memory design was fabricated as a 131K bit array in an 180nm process to provide silicon proof. The bit cell configuration with shared read and write bit cells gives effectively two memory banks. The grouping of rows together into common source domains allows only two opamps to control the current in all the bit cells across the whole chip. The sense amplifiers have a globally controlled switching threshold point and keep their static power in the nano-amp range. The bit cells can operate either in BASE2 or BASE4 mode and the read bit line transitions are reduced with a current stop construct. Parts were received from the foundry in an 84-pin PLCC and were tested at a number of locations on the die. They proved to be fully functional in BASE4. The silicon retention time was measured at room temperature and was greater than four seconds

Statistical analysis and design of subthreshold operation memories

This thesis presents novel methods based on a combination of well-known statistical techniques for faster estimation of memory yield and their application in the design of energy-efficient subthreshold memories. The emergence of size-constrained Internet-of-Things (IoT) devices and proliferation of the wearable market has brought forward the challenge of achieving the maximum energy efficiency per operation in these battery operated devices. Achieving this sought-after minimum energy operation is possible under sub-threshold operation of the circuit. However, reliable memory operation is currently unattainable at these ultra-low operating voltages because of the memory circuit's vanishing noise margins which shrink further in the presence of random process variations. The statistical methods, presented in this thesis, make the yield optimization of the sub-threshold memories computationally feasible by reducing the SPICE simulation overhead. We present novel modifications to statistical sampling techniques that reduce the SPICE simulation overhead in estimating memory failure probability. These sampling scheme provides 40x reduction in finding most probable failure point and 10x reduction in estimating failure probability using the SPICE simulations compared to the existing proposals. We then provide a novel method to create surrogate models of the memory margins with better extrapolation capability than the traditional regression methods. These models, based on Gaussian process regression, encode the sensitivity of the memory margins with respect to each individual threshold variation source in a one-dimensional kernel. We find that our proposed additive kernel based models have 32% smaller out-of-sample error (that is, better extrapolation capability outside training set) than using the six-dimensional universal kernel like Radial Basis Function (RBF). The thesis also explores the topological modifications to the SRAM bitcell to achieve faster read operation at the sub-threshold operating voltages. We present a ten-transistor SRAM bitcell that achieves 2x faster read operation than the existing ten-transistor sub-threshold SRAM bitcells, while ensuring similar noise margins. The SRAM bitcell provides 70% reduction in dynamic energy at the cost of 42% increase in the leakage energy per read operation. Finally, we investigate the energy efficiency of the eDRAM gain-cells as an alternative to the SRAM bitcells in the size-constrained IoT devices. We find that reducing their write path leakage current is the only way to reduce the read energy at Minimum Energy operation Point (MEP). Further, we study the effect of transistor up-sizing under the presence of threshold voltage variations on the mean MEP read energy by performing statistical analysis based on the ANOVA test of the full-factorial experimental design.Esta tesis presenta nuevos métodos basados en una combinación de técnicas estadísticas conocidas para la estimación rápida del rendimiento de la memoria y su aplicación en el diseño de memorias de energia eficiente de sub-umbral. La aparición de los dispositivos para el Internet de las cosas (IOT) y la proliferación del mercado portátil ha presentado el reto de lograr la máxima eficiencia energética por operación de estos dispositivos operados con baterias. La eficiencia de energía es posible si se considera la operacion por debajo del umbral de los circuitos. Sin embargo, la operación confiable de memoria es actualmente inalcanzable en estos bajos niveles de voltaje debido a márgenes de ruido de fuga del circuito de memoria, los cuales se pueden reducir aún más en presencia de variaciones randomicas de procesos. Los métodos estadísticos, que se presentan en esta tesis, hacen que la optimización del rendimiento de las memorias por debajo del umbral computacionalmente factible mediante la simulación SPICE. Presentamos nuevas modificaciones a las técnicas de muestreo estadístico que reducen la sobrecarga de simulación SPICE en la estimación de la probabilidad de fallo de memoria. Estos esquemas de muestreo proporciona una reducción de 40 veces en la búsqueda de puntos de fallo más probable, y 10 veces la reducción en la estimación de la probabilidad de fallo mediante las simulaciones SPICE en comparación con otras propuestas existentes. A continuación, se proporciona un método novedoso para crear modelos sustitutos de los márgenes de memoria con una mejor capacidad de extrapolación que los métodos tradicionales de regresión. Estos modelos, basados en el proceso de regresión Gaussiano, codifican la sensibilidad de los márgenes de memoria con respecto a cada fuente de variación de umbral individual en un núcleo de una sola dimensión. Los modelos propuestos, basados en kernel aditivos, tienen un error 32% menor que el error out-of-sample (es decir, mejor capacidad de extrapolación fuera del conjunto de entrenamiento) en comparacion con el núcleo universal de seis dimensiones como la función de base radial (RBF). La tesis también explora las modificaciones topológicas a la celda binaria SRAM para alcanzar velocidades de lectura mas rapidas dentro en el contexto de operaciones en el umbral de tensiones de funcionamiento. Presentamos una celda binaria SRAM de diez transistores que consigue aumentar en 2 veces la operación de lectura en comparacion con las celdas sub-umbral de SRAM de diez transistores existentes, garantizando al mismo tiempo los márgenes de ruido similares. La celda binaria SRAM proporciona una reducción del 70% en energía dinámica a costa del aumento del 42% en la energía de fuga por las operaciones de lectura. Por último, se investiga la eficiencia energética de las células de ganancia eDRAM como una alternativa a los bitcells SRAM en los dispositivos de tamaño limitado IOT. Encontramos que la reducción de la corriente de fuga en el path de escritura es la única manera de reducir la energía de lectura en el Punto Mínimo de Energía (MEP). Además, se estudia el efecto del transistor de dimensionamiento en virtud de la presencia de variaciones de voltaje de umbral en la media de energia de lecture MEP mediante el análisis estadístico basado en la prueba de ANOVA del diseño experimental factorial completo.Postprint (published version

Continued study of NAVSTAR/GPS for general aviation

A conceptual approach for examining the full potential of Global Positioning Systems (GPS) for the general aviation community is presented. Aspects of an experimental program to demonstrate these concepts are discussed. The report concludes with the observation that the true potential of GPS can only be exploited by utilization in concert with a data link. The capability afforded by the combination of position location and reporting stimulates the concept of GPS providing the auxiliary functions of collision avoidance, and approach and landing guidance. A series of general recommendations for future NASA and civil community efforts in order to continue to support GPS for general aviation are included

Aeronautical engineering: A continuing bibliography with indexes, supplement 100

This bibliography lists 295 reports, articles, and other documents introduced into the NASA Scientific and Technical Information System in August 1978

Dynamic Power Management of High Performance Network on Chip

With increased density of modern System on Chip(SoC) communication between nodes has become a major problem. Network on Chip is a novel on chip communication paradigm to solve this by using highly scalable and efficient packet switched network. The addition of intelligent networking on the chip adds to the chip’s power consumption thus making management of communication power an interesting and challenging research problem. While VLSI techniques have evolved over time to enable power reduction in the circuit level, the highly dynamic nature of modern large SoC demand more than that. This dissertation explores some innovative dynamic solutions to manage the ever increasing communication power in the post sub-micron era. Today’s highly integrated SoCs require great level of cross layer optimizations to provide maximum efficiency. This dissertation aims at the dynamic power management problem from top. Starting with a system level distribution and management down to microarchitecture enhancements were found necessary to deliver maximum power efficiency. A distributed power budget sharing technique is proposed. To efficiently satisfy the established power budget, a novel flow control and throttling technique is proposed. Finally power efficiency of underlying microarchitecture is explored and novel buffer and link management techniques are developed. All of the proposed techniques yield improvement in power-performance efficiency of the NoC infrastructure