333 research outputs found

    Addressing Computational Complexity of High Speed Distributed Circuits Using Model Order Reduction

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    Advanced in the fabrication technology of integrated circuits (ICs) over the last couple of years has resulted in an unparalleled expansion of the functionality of microelectronic systems. Today’s ICs feature complex deep-submicron mixed-signal designs and have found numerous applications in industry due to their lower manufacturing costs and higher performance levels. The tendency towards smaller feature sizes and increasing clock rates is placing higher demands on signal integrity design by highlighting previously negligible interconnect effects such as distortion, reflection, ringing, delay, and crosstalk. These effects if not predicted in the early stages of the design cycle can severely degrade circuit performance and reliability. The objective of this thesis is to develop new model order reduction (MOR) techniques to minimize the computational complexity of non-linear circuits and electronic systems that have delay elements. MOR techniques provide a mechanism to generate reduced order models from the detailed description of the original modified nodal analysis (MNA) formulation. The following contributions are made in this thesis: 1. The first project presents a methodology for reduction of Partial Element Equivalent Circuit (PEEC) models. PEEC method is widely used in electromagnetic compatibility and signal integrity problems in both the time and frequency domains. The PEEC model with retardation has been applied to 3-D analysis but often result in large and dense matrices, which are computationally expensive to solve. In this thesis, a new moment matching technique based on Multi-order Arnoldi is described to model PEEC networks with retardation. 2. The second project deals with developing an efficient model order reduction algorithm for simulating large interconnect networks with nonlinear elements. The proposed methodology is based on a multidimensional subspace method and uses constraint equations to link the nonlinear elements and biasing sources to the reduced order model. This approach significantly improves the simulation time of distributed nonlinear systems, since additional ports are not required to link the nonlinear elements to the reduced order model, yielding appreciable savings in the size of the reduced order model and computational time. 3. A parameterized reduction technique for nonlinear systems is presented. The proposed method uses multidimensional subspace and variational analysis to capture the variances of design parameters and approximates the weakly nonlinear functions as a Taylor series. An SVD approach is presented to address the efficiency of reduced order model. The proposed methodology significantly improves the simulation time of weakly nonlinear systems since the size of the reduced system is smaller than the original system and a new reduced model is not required each time a design parameter is changed

    Pole-Zero Computation in Microwave Circuits Using Multipoint PadĂŠ Approximation

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    A new method is proposed for dominant pole- zero (or pole-residue) analysis of large linear microwave circuits containing both lumped and distributed elements. The method is based on a multipoint PadÊ approximation. It finds a reduced-order rational s-domain transfer function using a data set obtained by solving the circuit at only a few frequency points. We propose two techniques in order to obtain the coefficients of the transfer function from the data set. The proposed method provides a more efficient computation of both transient and frequency domain responses than conventional simulators and more accurate results than the techniques based on single-point PadÊ approximation such as asymptotic waveform evaluation. Š 1995 IEE

    Modeling and Analysis of Noise and Interconnects for On-Chip Communication Link Design

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    This thesis considers modeling and analysis of noise and interconnects in onchip communication. Besides transistor count and speed, the capabilities of a modern design are often limited by on-chip communication links. These links typically consist of multiple interconnects that run parallel to each other for long distances between functional or memory blocks. Due to the scaling of technology, the interconnects have considerable electrical parasitics that affect their performance, power dissipation and signal integrity. Furthermore, because of electromagnetic coupling, the interconnects in the link need to be considered as an interacting group instead of as isolated signal paths. There is a need for accurate and computationally effective models in the early stages of the chip design process to assess or optimize issues affecting these interconnects. For this purpose, a set of analytical models is developed for on-chip data links in this thesis. First, a model is proposed for modeling crosstalk and intersymbol interference. The model takes into account the effects of inductance, initial states and bit sequences. Intersymbol interference is shown to affect crosstalk voltage and propagation delay depending on bus throughput and the amount of inductance. Next, a model is proposed for the switching current of a coupled bus. The model is combined with an existing model to evaluate power supply noise. The model is then applied to reduce both functional crosstalk and power supply noise caused by a bus as a trade-off with time. The proposed reduction method is shown to be effective in reducing long-range crosstalk noise. The effects of process variation on encoded signaling are then modeled. In encoded signaling, the input signals to a bus are encoded using additional signaling circuitry. The proposed model includes variation in both the signaling circuitry and in the wires to calculate the total delay variation of a bus. The model is applied to study level-encoded dual-rail and 1-of-4 signaling. In addition to regular voltage-mode and encoded voltage-mode signaling, current-mode signaling is a promising technique for global communication. A model for energy dissipation in RLC current-mode signaling is proposed in the thesis. The energy is derived separately for the driver, wire and receiver termination.Siirretty Doriast

    Algorithms and methodologies for interconnect reliability analysis of integrated circuits

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    The phenomenal progress of computing devices has been largely made possible by the sustained efforts of semiconductor industry in innovating techniques for extremely large-scale integration. Indeed, gigantically integrated circuits today contain multi-billion interconnects which enable the transistors to talk to each other -all in a space of few mm2. Such aggressively downscaled components (transistors and interconnects) silently suffer from increasing electric fields and impurities/defects during manufacturing. Compounded by the Gigahertz switching, the challenges of reliability and design integrity remains very much alive for chip designers, with Electro migration (EM) being the foremost interconnect reliability challenge. Traditionally, EM containment revolves around EM guidelines, generated at single-component level, whose non-compliance means that the component fails. Failure usually refers to deformation due to EM -manifested in form of resistance increase, which is unacceptable from circuit performance point of view. Subsequent aspects deal with correct-by-construct design of the chip followed by the signoff-verification of EM reliability. Interestingly, chip designs today have reached a dilemma point of reduced margin between the actual and reliably allowed current densities, versus, comparatively scarce system-failures. Consequently, this research is focused on improved algorithms and methodologies for interconnect reliability analysis enabling accurate and design-specific interpretation of EM events. In the first part, we present a new methodology for logic-IP (cell) internal EM verification: an inadequately attended area in the literature. Our SPICE-correlated model helps in evaluating the cell lifetime under any arbitrary reliability speciation, without generating additional data - unlike the traditional approaches. The model is apt for today's fab less eco-system, where there is a) increasing reuse of standard cells optimized for one market condition to another (e.g., wireless to automotive), as well as b) increasing 3rd party content on the chip requiring a rigorous sign-off. We present results from a 28nm production setup, demonstrating significant violations relaxation and flexibility to allow runtime level reliability retargeting. Subsequently, we focus on an important aspect of connecting the individual component-level failures to that of the system failure. We note that existing EM methodologies are based on serial reliability assumption, which deems the entire system to fail as soon as the first component in the system fails. With a highly redundant circuit topology, that of a clock grid, in perspective, we present algorithms for EM assessment, which allow us to incorporate and quantify the benefit from system redundancies. With the skew metric of clock-grid as a failure criterion, we demonstrate that unless such incorporations are done, chip lifetimes are underestimated by over 2x. This component-to-system reliability bridge is further extended through an extreme order statistics based approach, wherein, we demonstrate that system failures can be approximated by an asymptotic kth-component failure model, otherwise requiring costly Monte Carlo simulations. Using such approach, we can efficiently predict a system-criterion based time to failure within existing EDA frameworks. The last part of the research is related to incorporating the impact of global/local process variation on current densities as well as fundamental physical factors on EM. Through Hermite polynomial chaos based approach, we arrive at novel variations-aware current density models, which demonstrate significant margins (> 30 %) in EM lifetime when compared with the traditional worst case approach. The above research problems have been motivated by the decade-long work experience of the author dealing with reliability issues in industrial SoCs, first at Texas Instruments and later at Qualcomm.L'espectacular progrés dels dispositius de càlcul ha estat possible en gran part als esforços de la indústria dels semiconductors en proposar tècniques innovadores per circuits d'una alta escala d'integració. Els circuits integrats contenen milers de milions d'interconnexions que permeten connectar transistors dins d'un espai de pocs mm2. Tots aquests components estan afectats per camps elèctrics, impureses i defectes durant la seva fabricació. Degut a l’activitat a nivell de Gigahertzs, la fiabilitat i integritat són reptes importants pels dissenyadors de xips, on la Electromigració (EM) és un dels problemes més importants. Tradicionalment, el control de la EM ha girat entorn a directrius a nivell de component. L'incompliment d’alguna de les directrius implica un alt risc de falla. Per falla s'entén la degradació deguda a la EM, que es manifesta en forma d'augment de la resistència, la qual cosa és inacceptable des del punt de vista del rendiment del circuit. Altres aspectes tenen a veure amb la correcta construcció del xip i la verificació de fiabilitat abans d’enviar el xip a fabricar. Avui en dia, el disseny s’enfronta a dilemes importants a l’hora de definir els marges de fiabilitat dels xips. És un compromís entre eficiència i fiabilitat. La recerca en aquesta tesi se centra en la proposta d’algorismes i metodologies per a l'anàlisi de la fiabilitat d'interconnexió que permeten una interpretació precisa i específica d'esdeveniments d'EM. A la primera part de la tesi es presenta una nova metodologia pel disseny correcte-per-construcció i verificació d’EM a l’interior de les cel·les lògiques. Es presenta un model SPICE correlat que ajuda a avaluar el temps de vida de les cel·les segons qualsevol especificació arbitrària de fiabilitat i sense generar cap dada addicional, al contrari del que fan altres tècniques. El model és apte per l'ecosistema d'empreses de disseny quan hi ha a) una reutilització creixent de cel·les estàndard optimitzades per unes condicions de mercat i utilitzades en un altre (p.ex. de wireless a automoció), o b) la utilització de components del xip provinents de terceres parts i que necessiten una verificació rigorosa. Es presenten resultats en una tecnologia de 28nm, demostrant relaxacions significatives de les regles de fiabilitat i flexibilitat per permetre la reavaluació de la fiabilitat en temps d'execució. A continuació, el treball tracta un aspecte important sobre la relació entre les falles dels components i les falles del sistema. S'observa que les tècniques existents es basen en la suposició de fiabilitat en sèrie, que porta el sistema a fallar tant aviat hi ha un component que falla. Pensant en topologies redundants, com la de les graelles de rellotge, es proposen algorismes per l'anàlisi d'EM que permeten quantificar els beneficis de la redundància en el sistema. Utilitzant com a mètrica l’esbiaixi del senyal de rellotge, es demostra que la vida dels xips pot arribar a ser infravalorada per un factor de 2x. Aquest pont de fiabilitat entre component i sistema es perfecciona a través d'una tècnica basada en estadístics d'ordre extrem on es demostra que les falles poden ser aproximades amb un model asimptòtic de fallada de l'ièssim component, evitant així simulacions de Monte Carlo costoses. Amb aquesta tècnica, es pot predir eficientment el temps de fallada a nivell de sistema utilitzant eines industrials. La darrera part de la recerca està relacionada amb avaluar l'impacte de les variacions de procés en les densitats de corrent i factors físics de la EM. Mitjançant una tècnica basada en polinomis d'Hermite s'han obtingut uns nous models de densitat de corrent que mostren millores importants (>30%) en l'estimació de la vida del sistema comprades amb les tècniques basades en el cas pitjor. La recerca d'aquesta tesi ha estat motivada pel treball de l'autor durant més d'una dècada tractant temes de fiabilitat en sistemes, primer a Texas Instruments i després a Qualcomm.Postprint (published version

    Transient simulation of complex electronic circuits and systems operating at ultra high frequencies

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    The electronics industry worldwide faces increasingly difficult challenges in a bid to produce ultra-fast, reliable and inexpensive electronic devices. Electronic manufacturers rely on the Electronic Design Automation (EDA) industry to produce consistent Computer A id e d Design (CAD) simulation tools that w ill enable the design of new high-performance integrated circuits (IC), the key component of a modem electronic device. However, the continuing trend towards increasing operational frequencies and shrinking device sizes raises the question of the capability of existing circuit simulators to accurately and efficiently estimate circuit behaviour. The principle objective of this thesis is to advance the state-of-art in the transient simulation of complex electronic circuits and systems operating at ultra high frequencies. Given a set of excitations and initial conditions, the research problem involves the determination of the transient response o f a high-frequency complex electronic system consisting of linear (interconnects) and non-linear (discrete elements) parts with greatly improved efficien cy compared to existing methods and with the potential for very high accuracy in a way that permits an effective trade-off between accuracy and computational complexity. High-frequency interconnect effects are a major cause of the signal degradation encountered b y a signal propagating through linear interconnect networks in the modem IC. Therefore, the development of an interconnect model that can accurately and efficiently take into account frequency-dependent parameters of modem non-uniform interconnect is of paramount importance for state-of-art circuit simulators. Analytical models and models based on a set of tabulated data are investigated in this thesis. Two novel, h igh ly accurate and efficient interconnect simulation techniques are developed. These techniques combine model order reduction methods with either an analytical resonant model or an interconnect model generated from frequency-dependent sparameters derived from measurements or rigorous full-wave simulation. The latter part o f the thesis is concerned with envelope simulation. The complex mixture of profoundly different analog/digital parts in a modern IC gives rise to multitime signals, where a fast changing signal arising from the digital section is modulated by a slower-changing envelope signal related to the analog part. A transient analysis of such a circuit is in general very time-consuming. Therefore, specialised methods that take into account the multi-time nature o f the signal are required. To address this issue, a novel envelope simulation technique is developed. This technique combines a wavelet-based collocation method with a multi-time approach to result in a novel simulation technique that enables the desired trade-off between the required accuracy and computational efficiency in a simple and intuitive way. Furthermore, this new technique has the potential to greatly reduce the overall design cycle

    Novel Multicarrier Memory Channel Architecture Using Microwave Interconnects: Alleviating the Memory Wall

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    abstract: The increase in computing power has simultaneously increased the demand for input/output (I/O) bandwidth. Unfortunately, the speed of I/O and memory interconnects have not kept pace. Thus, processor-based systems are I/O and interconnect limited. The memory aggregated bandwidth is not scaling fast enough to keep up with increasing bandwidth demands. The term "memory wall" has been coined to describe this phenomenon. A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel. Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

    Fast high-order variation-aware IC interconnect analysis

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    Interconnects constitute a dominant source of circuit delay for modern chip designs. The variations of critical dimensions in modern VLSI technologies lead to variability in interconnect performance that must be fully accounted for in timing verification. However, handling a multitude of inter-die/intra-die variations and assessing their impacts on circuit performance can dramatically complicate the timing analysis. In this thesis, three practical interconnect delay and slew analysis methods are presented to facilitate efficient evaluation of wire performance variability. The first method is described in detail in Chapter III. It harnesses a collection of computationally efficient procedures and closed-form formulas. By doing so, process variations are directly mapped into the variability of the output delay and slew. This method can provide the closed-form formulas of the output delay and slew at any sink node of the interconnect nets fully parameterized, in-process variations. The second method is based on adjoint sensitivity analysis and driving point model. It constructs the driving point model of the driver which drives the interconnect net by using the adjoint sensitivity analysis method. Then the driving point model can be propagated through the interconnect network by using the first method to obtain the closedform formulas of the output delay and slew. The third method is the generalized second-order adjoint sensitivity analysis. We give the mathematical derivation of this method in Chapter V. The theoretical value of this method is it can not only handle this particular variational interconnect delay and slew analysis, but it also provides an avenue for automatical linear network analysis and optimization. The proposed methods not only provide statistical performance evaluations of the interconnect network under analysis but also produce delay and slew expressions parameterized in the underlying process variations in a quadratic parametric form. Experimental results show that superior accuracy can be achieved by our proposed methods
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