Fbb Cmos Tapered Buffer With Optimal Vth Selection

This paper represents fixed body biased CMOS Tapered Buffer which is designed to minimize the PDP (Power Delay Product) of the circuit. CMOS Tapered Buffers are often used for driving large capacitive load at high speed. Since there are tradeoffs between performance parameters of Buffer for minimizing its PDP value and due to technology constraints on the threshold voltage of MOS; one can vary the Vth up to certain limit while keeping the VDD constant. The proposed work is helpful in designing power efficient CMOS Tapered Buffer. This is found that in proposed Buffer when Vth value for the first stage of inverter is taken between the range of (0.2VDD - 0.4 VDD), its performance gets improved in terms of power dissipation. This analysis is verified by simulating the 2-stage Tapered buffer using standard 180nm CMOS technology in Cadence environment. Analysis performed on the schematic shows that FBB (Fixed Body Bias) Tapered Buffer reduces the average power dissipation across capacitive load by 77% and static power has been reduced to 18.3% at very less penalty in delay. Hence the proposed approach is suitable in the design of low power buffer for increasing the current capability of logic gate at optimal speed

Combined Time and Information Redundancy for SEU-Tolerance in Energy-Efficient Real-Time Systems

Recently the trade-off between energy consumption and fault-tolerance in real-time systems has been highlighted. These works have focused on dynamic voltage scaling (DVS) to reduce dynamic energy dissipation and on time redundancy to achieve transient-fault tolerance. While the time redundancy technique exploits the available slack time to increase the fault-tolerance by performing recovery executions, DVS exploits slack time to save energy. Therefore we believe there is a resource conflict between the time-redundancy technique and DVS. The first aim of this paper is to propose the usage of information redundancy to solve this problem. We demonstrate through analytical and experimental studies that it is possible to achieve both higher transient fault-tolerance (tolerance to single event upsets (SEU)) and less energy using a combination of information and time redundancy when compared with using time redundancy alone. The second aim of this paper is to analyze the interplay of transient-fault tolerance (SEU-tolerance) and adaptive body biasing (ABB) used to reduce static leakage energy, which has not been addressed in previous studies. We show that the same technique (i.e. the combination of time and information redundancy) is applicable to ABB-enabled systems and provides more advantages than time redundancy alone

Impact of parameter variations on circuits and microarchitecture

Parameter variations, which are increasing along with advances in process technologies, affect both timing and power. Variability must be considered at both the circuit and microarchitectural design levels to keep pace with performance scaling and to keep power consumption within reasonable limits. This article presents an overview of the main sources of variability and surveys variation-tolerant circuit and microarchitectural approaches.Peer ReviewedPostprint (published version

Ultra-low-voltage self-body biasing scheme and its application to basic arithmetic circuits

The gate level body biasing (GLBB) is assessed in the context of ultra-low-voltage logic designs. To this purpose, a GLBB mirror full adder is implemented by using a commercial 45 nm bulk CMOS triple-well technology and compared to equivalent conventional zero body-biased CMOS and dynamic threshold voltage MOSFET (DTMOS) circuits under different running conditions. Postlayout simulations demonstrate that, at the parity of leakage power consumption, the GLBB technique exhibits a significant concurrent reduction of the energy per operation and the delay in comparison to the conventional CMOS and DTMOS approaches. The silicon area required by the GLBB full adder is halved with respect to the equivalent DTMOS implementation, but it is higher in comparison to conventional CMOS design. Performed analysis also proves that the GLBB solution exhibits a high level of robustness against temperature fluctuations and process variations

Methodology for Standby Leakage Power Reduction in Nanometer-Scale CMOS Circuits

In nanometer-scale CMOS technology, leakage power has become a major component of the total power dissipation due to the downscaling of threshold voltage and gate oxide thickness. The leakage power consumption has received even more attention by increasing demand for mobile devices. Since mobile devices spend a majority of their time in a standby mode, the leakage power savings in standby state is critical to extend battery lifetime. For this reason, low power has become a major factor in designing CMOS circuits. In this dissertation, we propose a novel transistor reordering methodology for leakage reduction. Unlike previous technique, the proposed method provides exact reordering rules for minimum leakage formation by considering all leakage components. Thus, this method formulates an optimized structure for leakage reduction even in complex CMOS logic gate, and can be used in combination with other leakage reduction techniques to achieve further improvement. We also propose a new standby leakage reduction methodology, leakage-aware body biasing, to overcome the shortcomings of a conventional Reverse Body Biasing (RBB) technique. The RBB technique has been used to reduce subthreshold leakage current. Therefore, this technique works well under subthreshold dominant region even though it has intrinsic structural drawbacks. However, such drawbacks cannot be overlooked anymore since gate leakage has become comparable to subthreshold leakage in nanometer-scale region. In addition, BTBT leakage also increases with technology scaling due to the higher doping concentration applied in each process technology. In these circumstances, the objective of leakage minimization is not a single leakage source but the overall leakage sources. The proposed leakage-aware body biasing technique, unlike conventional RBB technique, considers all major leakage sources to minimize the negative effects of existing body biasing approach. This can be achieved by intelligently applying body bias to appropriate CMOS network based on its status (on-/off-state) with the aid of a pin/transistor reordering technique

Standby Leakage Power Reduction Technique for Nanoscale CMOS VLSI Systems

In this paper, a novel low-power design technique is proposed to minimize the standby leakage power in nanoscale CMOS very large scale integration (VLSI) systems by generating the adaptive optimal reverse body-bias voltage. The adaptive optimal body-bias voltage is generated from the proposed leakage monitoring circuit, which compares the subthreshold current (ISUB) and the band-to-band tunneling (BTBT) current (IBTBT). The proposed circuit was simulated in HSPICE using 32-nm bulk CMOS technology and evaluated using ISCAS85 benchmark circuits at different operating temperatures (ranging from 25°C to 100°C). Analysis of the results shows a maximum of 551 and 1491 times leakage power reduction at 25°C and 100°C, respectively, on a circuit with 546 gates. The proposed approach demonstrates that the optimal body bias reduces a considerable amount of standby leakage power dissipation in nanoscale CMOS integrated circuits. In this approach, the temperature and supply voltage variations are compensated by the proposed feedback loop

Multi-objective Pareto front and particle swarm optimization algorithms for power dissipation reduction in microprocessors

The progress of microelectronics making possible higher integration densities, and a considerable development of on-board systems are currently undergoing, this growth comes up against a limiting factor of power dissipation. Higher power dissipation will cause an immediate spread of generated heat which causes thermal problems. Consequently, the system's total consumed energy will increase as the system temperature increase. High temperatures in microprocessors and large thermal energy of computer systems produce huge problems of system confidence, performance, and cooling expenses. Power consumed by processors are mainly due to the increase in number of cores and the clock frequency, which is dissipated in the form of heat and causes thermal challenges for chip designers. As the microprocessor’s performance has increased remarkably in Nano-meter technology, power dissipation is becoming non-negligible. To solve this problem, this article addresses power dissipation reduction issues for high performance processors using multi-objective Pareto front (PF), and particle swarm optimization (PSO) algorithms to achieve power dissipation as a prior computation that reduces the real delay of a target microprocessor unit. Simulation is verified the conceptual fundamentals and optimization of joint body and supply voltages (Vth-VDD) which showing satisfactory findings

Technology exploration for adaptive power and frequency scaling in 90nm CMOS

In this paper we examine the expectations and limitations of design technologies such as adaptive voltage scaling (AVS) and adaptive body biasing (ABB) in a modern deep sub-micron process. To serve this purpose, a set of ring oscillators was fabricated in a 90nm triple-well CMOS technology. The analysis hereby presented is based on two ring oscillators running at 822MHz and 93MHz, respectively. Measurement results indicate that it is possible to reach 13.8x power savings by 3.4x frequency downscaling using AVS, ±11% power and ±8% frequency tuning at nominal conditions using ABB only, 22x power savings with 5x frequency downscaling by combining AVS and ABB, as well as 22x leakage reduction