Efficient and Linear CMOS Power Amplifier and Front-end Design for Broadband Fully-Integrated 28-GHz 5G Phased Arrays

Demand for data traffic on mobile networks is growing exponentially with time and on a global scale. The emerging fifth-generation (5G) wireless standard is being developed with millimeter-wave (mm-Wave) links as a key technological enabler to address this growth by a 2020 time frame. The wireless industry is currently racing to deploy mm-Wave mobile services, especially in the 28-GHz band. Previous widely-held perceptions of fundamental propagation limitations were overcome using phased arrays. Equally important for success of 5G is the development of low-power, broadband user equipment (UE) radios in commercial-grade technologies. This dissertation demonstrates design methodologies and circuit techniques to tackle the critical challenge of key phased array front-end circuits in low-cost complementary metal oxide semiconductor (CMOS) technology. Two power amplifier (PA) proof-of-concept prototypes are implemented in deeply scaled 28- nm and 40-nm CMOS processes, demonstrating state-of-the-art linearity and efficiency for extremely broadband communication signals. Subsequently, the 40 nm PA design is successfully embedded into a low-power fully-integrated transmit-receive front-end module. The 28 nm PA prototype in this dissertation is the first reported linear, bulk CMOS PA targeting low-power 5G mobile UE integrated phased array transceivers. An optimization methodology is presented to maximizing power added efficiency (PAE) in the PA output stage at a desired error vector magnitude (EVM) and range to address challenging 5G uplink requirements. Then, a source degeneration inductor in the optimized output stage is shown to further enable its embedding into a two-stage transformer-coupled PA. The inductor helps by broadening inter-stage impedance matching bandwidth, and helping to reduce distortion. Designed and fabricated in 1P7M 28 nm bulk CMOS and using a 1 V supply, the PA achieves +4.2 dBm/9% measured Pout/PAE at −25 dBc EVM for a 250 MHz-wide, 64-QAM orthogonal frequency division multiplexing (OFDM) signal with 9.6 dB peak-to-average power ratio (PAPR). The PA also achieves 35.5%/10% PAE for continuous wave signals at saturation/9.6dB back-off from saturation. To the best of the author’s knowledge, these are the highest measured PAE values among published K- and K a-band CMOS PAs to date. To drastically extend the communication bandwidth in 28 GHz-band UE devices, and to explore the potential of CMOS technology for more demanding access point (AP) devices, the second PA is demonstrated in a 40 nm process. This design supports a signal radio frequency bandwidth (RFBW) >3× the state-of-the-art without degrading output power (i.e. range), PAE (i.e. battery life), or EVM (i.e. amplifier fidelity). The three-stage PA uses higher-order, dual-resonance transformer matching networks with bandwidths optimized for wideband linearity. Digital gain control of 9 dB range is integrated for phased array operation. The gain control is a needed functionality, but it is largely absent from reported high-performance mm-Wave PAs in the literature. The PA is fabricated in a 1P6M 40 nm CMOS LP technology with 1.1 V supply, and achieves Pout/PAE of +6.7 dBm/11% for an 8×100 MHz carrier aggregation 64-QAM OFDM signal with 9.7 dB PAPR. This PA therefore is the first to demonstrate the viability of CMOS technology to address even the very challenging 5G AP/downlink signal bandwidth requirement. Finally, leveraging the developed PA design methodologies and circuits, a low power transmit-receive phased array front-end module is fully integrated in 40 nm technology. In transmit-mode, the front-end maintains the excellent performance of the 40 nm PA: achieving +5.5 dBm/9% for the same 8×100 MHz carrier aggregation signal above. In receive-mode, a 5.5 dB noise figure (NF) and a minimum third-order input intercept point (IIP₃) of −13 dBm are achieved. The performance of the implemented CMOS frontend is comparable to state-of-the-art publications and commercial products that were very recently developed in silicon germanium (SiGe) technologies for 5G communication

A Millimeter-Wave Coexistent RFIC Receiver Architecture in 0.18-µm SiGe BiCMOS for Radar and Communication Systems

Innovative circuit architectures and techniques to enhance the performance of several key BiCMOS RFIC building blocks applied in radar and wireless communication systems operating at the millimeter-wave frequencies are addressed in this dissertation. The former encapsulates the development of an advanced, low-cost and miniature millimeter-wave coexistent current mode direct conversion receiver for short-range, high-resolution radar and high data rate communication systems. A new class of broadband low power consumption active balun-LNA consisting of two common emitters amplifiers mutually coupled thru an AC stacked transformer for power saving and gain boosting. The active balun-LNA exhibits new high linearity technique using a constant gm cell transconductance independent of input-outputs variations based on equal emitters’ area ratios. A novel multi-stages active balun-LNA with innovative technique to mitigate amplitude and phase imbalances is proposed. The new multi-stages balun-LNA technique consists of distributed feed-forward averaging recycles correction for amplitude and phase errors and is insensitive to unequal paths parasitic from input to outputs. The distributed averaging recycles correction technique resolves the amplitude and phase errors residuals in a multi-iterative process. The new multi-stages balun-LNA averaging correction technique is frequency independent and can perform amplitude and phase calibrations without relying on passive lumped elements for compensation. The multi-stage balun-LNA exhibits excellent performance from 10 to 50 GHz with amplitude and phase mismatches less than 0.7 dB and 2.86º, respectively. Furthermore, the new multi-stages balun-LNA operates in current mode and shows high linearity with low power consumption. The unique balun-LNA design can operates well into mm-wave regions and is an integral block of the mm-wave radar and communication systems. The integration of several RFIC blocks constitutes the broadband millimeter-wave coexistent current mode direct conversion receiver architecture operating from 22- 44 GHz. The system and architectural level analysis provide a unique understanding into the receiver characteristics and design trade-offs. The RF front-end is based on the broadband multi-stages active balun-LNA coupled into a fully balanced passive mixer with an all-pass in-phase/quadrature phase generator. The trans-impedance amplifier converts the input signal current into a voltage gain at the outputs. Simultaneously, the high power input signal current is channelized into an anti-aliasing filter with 20 dB rejection for out of band interferers. In addition, the dissertation demonstrates a wide dynamic range system with small die area, cost effective and very low power consumption

A Millimeter-Wave Coexistent RFIC Receiver Architecture in 0.18-µm SiGe BiCMOS for Radar and Communication Systems

Innovative circuit architectures and techniques to enhance the performance of several key BiCMOS RFIC building blocks applied in radar and wireless communication systems operating at the millimeter-wave frequencies are addressed in this dissertation. The former encapsulates the development of an advanced, low-cost and miniature millimeter-wave coexistent current mode direct conversion receiver for short-range, high-resolution radar and high data rate communication systems. A new class of broadband low power consumption active balun-LNA consisting of two common emitters amplifiers mutually coupled thru an AC stacked transformer for power saving and gain boosting. The active balun-LNA exhibits new high linearity technique using a constant gm cell transconductance independent of input-outputs variations based on equal emitters’ area ratios. A novel multi-stages active balun-LNA with innovative technique to mitigate amplitude and phase imbalances is proposed. The new multi-stages balun-LNA technique consists of distributed feed-forward averaging recycles correction for amplitude and phase errors and is insensitive to unequal paths parasitic from input to outputs. The distributed averaging recycles correction technique resolves the amplitude and phase errors residuals in a multi-iterative process. The new multi-stages balun-LNA averaging correction technique is frequency independent and can perform amplitude and phase calibrations without relying on passive lumped elements for compensation. The multi-stage balun-LNA exhibits excellent performance from 10 to 50 GHz with amplitude and phase mismatches less than 0.7 dB and 2.86º, respectively. Furthermore, the new multi-stages balun-LNA operates in current mode and shows high linearity with low power consumption. The unique balun-LNA design can operates well into mm-wave regions and is an integral block of the mm-wave radar and communication systems. The integration of several RFIC blocks constitutes the broadband millimeter-wave coexistent current mode direct conversion receiver architecture operating from 22- 44 GHz. The system and architectural level analysis provide a unique understanding into the receiver characteristics and design trade-offs. The RF front-end is based on the broadband multi-stages active balun-LNA coupled into a fully balanced passive mixer with an all-pass in-phase/quadrature phase generator. The trans-impedance amplifier converts the input signal current into a voltage gain at the outputs. Simultaneously, the high power input signal current is channelized into an anti-aliasing filter with 20 dB rejection for out of band interferers. In addition, the dissertation demonstrates a wide dynamic range system with small die area, cost effective and very low power consumption

ANALYSIS AND DESIGN OF SILICON-BASED MILLIMETER-WAVE AMPLIFIERS

Ph.DDOCTOR OF PHILOSOPH

Wideband CMOS Data Converters for Linear and Efficient mmWave Transmitters

With continuously increasing demands for wireless connectivity, higher\ua0carrier frequencies and wider bandwidths are explored. To overcome a limited transmit power at these higher carrier frequencies, multiple\ua0input multiple output (MIMO) systems, with a large number of transmitters\ua0and antennas, are used to direct the transmitted power towards\ua0the user. With a large transmitter count, each individual transmitter\ua0needs to be small and allow for tight integration with digital circuits. In\ua0addition, modern communication standards require linear transmitters,\ua0making linearity an important factor in the transmitter design.In this thesis, radio frequency digital-to-analog converter (RF-DAC)-based transmitters are explored. They shift the transition from digital\ua0to analog closer to the antennas, performing both digital-to-analog\ua0conversion and up-conversion in a single block. To reduce the need for\ua0computationally costly digital predistortion (DPD), a linear and wellbehaved\ua0RF-DAC transfer characteristic is desirable. The combination\ua0of non-overlapping local oscillator (LO) signals and an expanding segmented\ua0non-linear RF-DAC scaling is evaluated as a way to linearize\ua0the transmitter. This linearization concept has been studied both for\ua0the linearization of the RF-DAC itself and for the joint linearization of\ua0the cascaded RF-DAC-based modulator and power amplifier (PA) combination.\ua0To adapt the linearization, observation receivers are needed.\ua0In these, high-speed analog-to-digital converters (ADCs) have a central\ua0role. A high-speed ADC has been designed and evaluated to understand\ua0how concepts used to increase the sample rate affect the dynamic performance

MILLIMETER-WAVE QUADRATURE RECEIVERS FOR ATMOSPHERIC SENSING AND RADIOMETRY

The objective of this research is to investigate the design challenges of millimeter wave (mm-wave) quadrature receivers for emerging applications and develop new ideas to ad- dress these challenges. Next-generation wireless networks, satellite communications, atmospheric sensing instruments, autonomous vehicle radars, and body scanners are targeting to operate at mm-wave frequencies, and high-performance electronics are needed to enable these technologies. In this research, we investigate novel circuit topologies to improve the performance of existing mm-wave quadrature receivers, particularly for radiometry and remote sensing applications. A transformer-based front-end switch is co- designed with an LNA where the transformer acts as the input matching network of the LNA, reducing the front-end loss and system noise figure. Broadband and low-loss quadrature signal generation networks are proposed to provide highly balanced quadrature signals to reject the image frequency content. In addition, a high-efficiency frequency multiplier topology is demonstrated, achieving superior performance compared to the state-of-the-art designs. Lastly, the reliability and noise performance of on-chip noise source devices (PN junctions) in a SiGe BiCMOS platform was characterized and compared. To confirm the advantages of our ideas, the measurement and simulation results of all fabricated circuits are presented and discussed.Ph.D

CMOS Signal Synthesizers for Emerging RF-to-Optical Applications

The need for clean and powerful signal generation is ubiquitous, with applications spanning the spectrum from RF to mm-Wave, to into and beyond the terahertz-gap. RF applications including mobile telephony and microprocessors have effectively harnessed mixed-signal integration in CMOS to realize robust on-chip signal sources calibrated against adverse ambient conditions. Combined with low cost and high yield, the CMOS component of hand-held devices costs a few cents per part per million parts. This low cost, and integrated digital processing, make CMOS an attractive option for applications like high-resolution imaging and ranging, and the emerging 5-G communication space. RADAR techniques when expanded to optical frequencies can enable micrometers of resolution for 3D imaging. These applications, however, impose upto 100x more exacting specifications on power and spectral purity at much higher frequencies than conventional RF synthesizers. This generation of applications will present unconventional challenges for transistor technologies - whether it is to squeeze performance in the conventionally used spectrum, already wrung dry, or signal generation and system design in the relatively emptier mm-Wave to sub-mmWave spectrum, much of the latter falling in the ``Terahertz Gap". Indeed, transistor scaling and innovative device physics leading to new transistor topologies have yielded higher cut-off frequencies in CMOS, though still lagging well behind SiGe and III-V semiconductors. To avoid multimodule solutions with functionality partitioned across different technologies, CMOS must be pushed out of its comfort zone, and technology scaling has to have accompanying breakthroughs in design approaches not only at the system but also at the block level. In this thesis, while not targeting a specific application, we seek to formulate the obstacles in synthesizing high frequency, high power and low noise signals in CMOS and construct a coherent design methodology to address them. Based on this, three novel prototypes to overcome the limiting factors in each case are presented. The first half of this thesis deals with high frequency signal synthesis and power generation in CMOS. Outside the range of frequencies where the transistor has gain, frequency generation necessitates harmonic extraction either as harmonic oscillators or as frequency multipliers. We augment the traditional maximum oscillation frequency metric (fmax), which only accounts for transistor losses, with passive component loss to derive an effective fmax metric. We then present a methodology for building oscillators at this fmax, the Maximum Gain Ring Oscillator. Next, we explore generating large signals beyond fmax through harmonic extraction in multipliers. Applying concepts of waveform shaping, we demonstrate a Power Mixer that engineers transistor nonlinearity by manipulating the amplitudes and relative phase shifts of different device nodes to maximize performance at a specific harmonic beyond device cut-off. The second half proposes a new architecture for an ultra-low noise phase-locked loop (PLL), the Reference-Sampling PLL. In conventional PLLs, a noisy buffer converts the slow, low-noise sine-wave reference signal to a jittery square-wave clock against which the phase of a noisy voltage-controlled oscillator (VCO) is corrected. We eliminate this reference buffer, and measure phase error by sampling the reference sine-wave with the 50x faster VCO waveform already available on chip, and selecting the relevant sample with voltage proportional to phase error. By avoiding the N-squared multiplication of the high-power reference buffer noise, and directly using voltage-mode phase error to control the VCO, we eliminate several noisy components in the controlling loop for ultra-low integrated jitter for a given power consumption. Further, isolation of the VCO tank from any varying load, unlike other contemporary divider-less PLL architectures, results in an architecture with record performance in the low-noise and low-spur space. We conclude with work that brings together concepts developed for clean, high-power signal generation towards a hybrid CMOS-Optical approach to Frequency-Modulated Continuous-Wave (FMCW) Light-Detection-And-Ranging (LIDAR). Cost-effective tunable lasers are temperature-sensitive and have nonlinear tuning profiles, rendering precise frequency modulations or 'chirps' untenable. Locking them to an electronic reference through an electro-optic PLL, and electronically calibrating the control signal for nonlinearity and ambient sensitivity, can make such chirps possible. Approaches that build on the body of advances in electrical PLLs to control the performance, and ease the specification on the design of optical systems are proposed. Eventually, we seek to leverage the twin advantages of silicon-intensive integration and low-cost high-yield towards developing a single-chip solution that uses on-chip signal processing and phased arrays to generate precise and robust chirps for an electronically-steerable fine LIDAR beam

High-Efficiency Millimeter-Wave Front-Ends for Large Phased-Array Transmitters

The ever-increasing demand for wireless broadband connectivity requires infrastructure capable of supporting data transfer rates at multi-Gbps. To accommodate such heavy traffic, the channel capacity for the given spectrum must be utilized as efficiently as possible. Wideband millimeter-wave phased-array systems can enhance the capacity of the channel by providing multiple steerable directional beams. However the cost, complexity, and high power consumption of phased-array systems are key barriers to the commercialization of such technology. Silicon-based beam-former chips and scalable phased-array technology offer promising solutions to lower the cost of phased-array systems. However, the implementation of low-power phased-array architectures is still a challenge. Millimeter-wave power generation in silicon beam-formers suffers from low efficiency. The stringent linearity requirements for multi-beam wideband arrays further limits the achievable efficiency. In scalable phased-arrays, each module consists of an antenna sub-array and a beam-former chip that feeds the antenna elements. To improve efficiency, a design methodology that considers the beam-former chip and the antenna array as one entity is necessary. In this thesis, power-efficient solutions for a millimeter-wave phased-array transmitter are studied and different high-efficiency power amplifier structures for broadband applications are proposed. Initially, the design of a novel 27-30 GHz RF front-end consisting of a variable gain amplifier, a 360 degree phase shifter, and a two-stage linear power amplifier with output power of 12 dBm is described. It is fabricated using 0.13 $\mu m$ SiGe technology. This chip serves as the RF core of a beam-former chip with eight outputs for feeding a 2$\times$2 dual-feed sub-array. Such sub-arrays are used as part of large phased-arrays for SATCOM infrastructure. Measurement results show 26.7 \% total efficiency for the designed chip. The chip achieves the highest efficiency among Ka-band phased-array transmitters reported in the literature. In addition, original transformer-based output matching structures are proposed for harmonic-tuned power amplifiers. Harmonic-tuned power amplifiers have high peak-efficiency but their complicated output matching structure can limit their use in beam-former RF front-ends. The proposed output matching structures have the layout footprint of a transformer, making their use in beam-former chips feasible. A 26-38 GHz power amplifier based on a non-inverting 1:1 transformer is fabricated. A measured efficiency of more than 27 \% is achieved across the band with an output power of 12 dBm. Furthermore, two continuous class $F^{-1}$ power amplifiers using 1:1 inverting transformers are described. Simulation results show a peak-efficiency of 35 \% and output power of 12 dBm from 24 to 30 GHz. A common-base power amplifier with inverting transformer output matching is also demonstrated. This amplifier achieves a peak-efficiency of 42 \% and peak output power of 16 dBm. Finally, a low-loss Ka-band re-configurable output matching structure based on tunable lines is proposed and implemented. A double-stub matching structure with three tunable segments is proposed to maximize the impedance matching coverage. This structure can potentially compensate for the antenna impedance variation in phased-array antennas

A STUDY ON LOW-PHASE-NOISE 77-GHZ CMOS TRANSMITTER FOR FMCW RADAR

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2017. 2. 남상욱.This thesis presents design methodology and experimental verification of a low-phase-noise 77-GHz CMOS FMCW (Frequency Modulated Continuous Wave) radar transmitter. It is quite difficult to design a low-phase-noise signal generator at millimeter-wave frequencies in CMOS because gain of CMOS transistors is extremely low at those frequencies. When using a frequency multiplier, it is relatively advantageous to design a low-phase-noise signal source because a VCO can be designed at lower frequency band where gain of active devices is high. When using multiple stage frequency multipliers to achieve low-phase-noise performance, the operating frequency range can be reduced and DC power consumption can be increased. Therefore, in this thesis, two methods for realizing 77-GHz CMOS low-phase-noise signal source have been proposed. One method is to combine a ×6 frequency multiplier and a 12.8-GHz FMCW signal generator. In this case, a VCO, an injection-locked VCO buffer, a ×3 frequency multiplier (tripler), and a ×2 frequency multiplier (doubler) constituting the 77-GHz signal generator are designed as a four-stage coupled injection-locked oscillator (ILO) chain which is oscillated and injected into the output signal of the preceding stage. The VCO used in the 12.8-GHz PLL (phase locked loop) was designed using linearized transconductance (LiT: Linearized Transconductance) technology to have low phase noise characteristics and was designed to be simpler than the existing LiT VCO using a 3:2 transformer. Since the PLL is designed as the integer-N type, an external frequency modulated triangular reference signal must be injected into the phase frequency detector (PFD) of the PLL to generate the FMCW signal. The fabricated transmitter chip supports FMCW output signals in the 76.81-77.95 GHz band when supplied with the external reference triangular signal from 50.00 to 50.75 MHz. The RF output power is about 8.9 dBm and consumes 116.7 mW of DC power. The measured phase noise is -91.16 dBc/Hz at the 1-MHz offset of the 76.81-GHz carrier frequency, which is the lowest phase noise characteristic of the previously announced 77-GHz CMOS transmitter and transceiver. A transmitter module for 77-GHz radar performance measurement was fabricated by combining the transmitter chip with the on-chip feeder that can solve the millimeter-wave packaging problem. The other is a method of combining a ×28 frequency multiplier and a 2.75-GHz FMCW signal generator. As in the previous method, the VCO, a ×7 multiplier, and two ×2 multipliers constituting the 77-GHz signal generator are each designed as a 4-stage ILO chain. The VCO used in the 2.75-GHz PLL is designed as a class-C type that improves the startup problem to have low-phase-noise characteristics. As in the previous case, an integer-N type PLL is used. The fabricated transmitter chip supports FMCW output signals in the 76.26-78.23 GHz band when supplied with the external reference triangular signal from 42.55 to 43.65 MHz. The RF output power is about -18 dBm and consumes 195.4 mW of DC power. The measured phase noise is -93.64 dBc/Hz at the 1-MHz offset of the 78.13-GHz carrier frequency, which is even lower phase noise characteristic than the ×6 frequency multiplier based transmitter chip.Chapter 1. Introduction 1 1.1 Types and Applications of Automotive Radars 2 1.1 Research Strategy 7 Chapter 2. Frequency and Architecture selection 12 2.1 LiT VCO 14 2.2 Class-C VCO 19 2.3 Injection-Locked Oscillator Chain 24 2.4 Summary 29 Chapter 3. 77-GHz FMCW Radar Transmitter with 12.8-GHz PLL and 6 Frequency Multiplier 30 3.1 Proposed LiT VCO 33 3.2 6 Multiplier and Power Amplifier 40 3.3 Measurement Results 46 3.3.1 LiT VCO Measurement Results 46 3.3.2 77-GHz Transmitter (v1) Measurement Results 49 3.4 Summary 60 Chapter 4. 77-GHz FMCW Radar Transmitter with 2.75-GHz PLL and 28 Frequency Multiplier 62 4.1 Proposed class-C VCO 65 4.2 28 Multiplier and Power Amplifier 73 4.3 Measurement Results 80 4.3.1 Class-C VCO Measurement Results 80 4.3.2 77-GHz Transmitter (v2) Measurement Results 83 4.4 Summary 90 Chapter 5. Conclusion 92 Bibliography 94 Abstract 97Docto

RF-CMOS Switched-Capacitor Power Amplifier for NB-IoT RF transceivers

The increasing market of Narrowband Internet of Things (NB-IoT) applications brings new challenges and constrains in the design of fully integrated transmission architectures, capable of delivering the desired output power with the highest efficiency and linearity, ensuring the longest battery lifetime of the devices. This work is focused on the study and implementation of the most power consuming block within the transmission chain: the Power Amplifier (PA). In this regard, a Switched Capacitor Power Amplifier (SCPA) is designed to operate at a frequency of 0.9 GHz and aiming the maximum output power allowed by the standard of 23 dBm. The final architecture includes a matching network that connects to eight unit PA cells through an LC filter. Each unit PA cell is made of a cascoded class-D PA, two drivers, a level shifter and two selection logic blocks. All the blocks were developed using RF components from a UMC 130nm CMOS process with a 1.2V/2.4V supply voltage. The results show that the architecture is able to produce a maximum output power of 15.61 dBm with a maximum Power Added Efficiency (PAE) of 26.52% and a Total Harmonic Distortion (THD) of 0.68%. In the same conditions, the measured HD2 and HD3 are of -70.23dBc and -43.41dBc, respectively. Additionally, a modulation stage was implemented in VerilogA in order to evaluate the impact of sending different symbols in the SCPA performance. The block, designed for a 16 QAM modulation, is responsible for generating both the number of unit PA cells to be selected and the phase of the clock connected to each PA cell, depending on the amplitude and phase of the constellation points being transmitted.O mercado crescente de aplicações IoT de largura de banda estreita coloca novos desafios e restrições no desenvolvimento de arquiteturas de transmissão totalmente integradas, capazes de produzir a potência desejada com o máximo de eficiência e linearidade possí- veis, de forma a garantir o maior tempo de vida de bateria dos dispositivos. Este trabalho foca-se no estudo e implementação do bloco da cadeia de transmissão que mais consome: o amplificador de potência. Neste sentido, um amplificador de potência de condensadores comutados é desenhado para operar à frequência de 0.9GHz com o objetivo de produzir à sua saída o valor de potência máxima permitida pelo standard de 23dBm. A arquitetura inclui uma malha de adaptação que liga a oito PAs unitários através de um filtro LC. Cada PA unitário consiste num amplificador de potencia class-D cascoded, dois drivers, um level shifter e dois blocos de lógica de seleção. Todos estes blocos foram desenvolvidos usando componentes RF da tecnologia CMOS 130nm da UMC com uma tensão de alimentação de 1.2V/2.4V. Os resultados mostram que a arquitetura é capaz de produzir uma potência à saída de 15.61dBm, com uma PAE de 26.52% e uma distorção harmónica total de 0.68%. Nas mesmas condições, os valores medidos da HD2 e HD3 são de -70.23dBc e -43.41dBc, respetivamente. Adicionalmente, um andar de modulação foi implementado em VerilogA, de forma a avaliar o impacto de enviar diferentes símbolos na performance do amplificador. Este bloco, desenvolvido para uma modulacao 16QAM, é responsável por gerar o número de unidades de PA a serem selecionados e o relógio de fase que liga a cada PA unitário, dependendo da amplitude e fase dos pontos da constelação a serem transmitidos