Roadmap on semiconductor-cell biointerfaces.

This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world

Compact modelling in RF CMOS technology

With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years. Today, the standard CMOS technology has become a popular choice for realizing radio frequency (RF) applications. The focus of the thesis is on device compact modelling methodologies in RF CMOS. Compact models oriented to integrated circuit (ICs) computer automatic design (CAD) are the key component of a process design kit (PDK) and the bridge between design houses and foundries. In this work, a novel substrate model is proposed for accurately characterizing the behaviour of RF-MOSFETs with deep n-wells (DNW). A simple test structure is presented to directly access the substrate parasitics from two-port measurements in DNWs. The most important passive device in RFIC design in CMOS is the spiral inductor. A 1-pi model with a novel substrate network is proposed to characterize the broadband loss mechanisms of spiral inductors. Based on the proposed 1-pi model, a physics-originated fully-scalable 2-pi model and model parameter extraction methodology are also presented for spiral inductors in this work. To test and verify the developed active and passive device models and model parameter extraction methods, a series of RF-MOSFETs and planar on-chip spiral inductors with different geometries manufactured by employing standard RF CMOS processes were considered. Excellent agreement between the measured and the simulated results validate the compact models and modelling technologies developed in this work

On-chip Spiral Inductor/transformer Design And Modeling For Rf Applications

Passive components are indispensable in the design and development of microchips for high-frequency applications. Inductors in particular are used frequently in radio frequency (RF) IC\u27s such as low-noise amplifiers and oscillators. High performance inductor has become one of the critical components for voltage controlled oscillator (VCO) design, for its quality factor (Q) value directly affects the VCO phase noise. The optimization of inductor layout can improve its performance, but the improvement is limited by selected technology. Inductor performance is bounded by the thin routing metal and small distance from lossy substrate. On the other hand, the in-accurate inductor modeling further limits the optimization process. The on-chip inductor has been an important research topic since it was first proposed in early 1990\u27s. Significant amount of study has been accomplished and reported in literature; whereas some methods have been used in industry, but not released to public. It is of no doubt that a comprehensive solution is not exist yet. A comprehensive study of previous will be first address. Later author will point out the in-adequacy of skin effect and proximity effect as cause of current crowding in the inductor metal. A model method embedded with new explanation of current crowding is proposed and its applicability in differential inductor and balun is validated. This study leads to a robust optimization routine to improve inductor performance without any addition technology cost and development

Index to 1984 NASA Tech Briefs, volume 9, numbers 1-4

Short announcements of new technology derived from the R&D activities of NASA are presented. These briefs emphasize information considered likely to be transferrable across industrial, regional, or disciplinary lines and are issued to encourage commercial application. This index for 1984 Tech B Briefs contains abstracts and four indexes: subject, personal author, originating center, and Tech Brief Number. The following areas are covered: electronic components and circuits, electronic systems, physical sciences, materials, life sciences, mechanics, machinery, fabrication technology, and mathematics and information sciences

CMOS On-Chip 3D Inductor Design & Application in RF Bio-Sensing

abstract: Three-dimensional (3D) inductors with square, hexagonal and octagonal geometries have been designed and simulated in ANSYS HFSS. The inductors have been designed on Silicon substrate with through-hole via with different width, spacing and thickness. Spice modeling has been done in Agilent ADS and comparison has been made with results of custom excel based calculator and HFSS simulation results. Single ended quality factor was measured as 12.97 and differential ended quality factor was measured as 15.96 at a maximum operational frequency of 3.65GHz. The single ended and differential inductance was measured as 2.98nH and 2.88nH respectively at this frequency. Based on results a symmetric octagonal inductor design has been recommended to be used for application in RF biosensing. A system design has been proposed based on use of this inductor and principle of inductive sensing using magnetic labeling.Dissertation/ThesisM.S. Electrical Engineering 201