An extensive English language bibliography on graph theory and its applications

Bibliography on graph theory and its application

Fabrication and Pseudo-Analog Characteristics of Ta2O5 -Based ReRAM Cell

Memristori on yksi elektroniikan peruskomponenteista vastuksen, kondensaattorin ja kelan lisäksi. Se on passiivinen komponentti, jonka teorian kehitti Leon Chua vuonna 1971. Kesti kuitenkin yli kolmekymmentä vuotta ennen kuin teoria pystyttiin yhdistämään kokeellisiin tuloksiin. Vuonna 2008 Hewlett Packard julkaisi artikkelin, jossa he väittivät valmistaneensa ensimmäisen toimivan memristorin. Memristori eli muistivastus on resistiivinen komponentti, jonka vastusarvoa pystytään muuttamaan. Nimens mukaisesti memristori kykenee myös säilyttämään vastusarvonsa ilman jatkuvaa virtaa ja jännitettä. Tyypillisesti memristorilla on vähintään kaksi vastusarvoa, joista kumpikin pystytään valitsemaan syöttämällä komponentille jännitettä tai virtaa. Tämän vuoksi memristoreita kutsutaankin usein resistiivisiksi kytkimiksi. Resistiivisiä kytkimiä tutkitaan nykyään paljon erityisesti niiden mahdollistaman muistiteknologian takia. Resistiivisistä kytkimistä rakennettua muistia kutsutaan ReRAM-muistiksi (lyhenne sanoista resistive random access memory). ReRAM-muisti on Flash-muistin tapaan haihtumaton muisti, jota voidaan sähköisesti ohjelmoida tai tyhjentää. Flash-muistia käytetään tällä hetkellä esimerkiksi muistitikuissa. ReRAM-muisti mahdollistaa kuitenkin nopeamman ja vähävirtaiseman toiminnan Flashiin verrattuna, joten se on tulevaisuudessa varteenotettava kilpailija markkinoilla. ReRAM-muisti mahdollistaa myös useammin bitin tallentamisen yhteen muistisoluun binäärisen (”0” tai ”1”) toiminnan sijaan. Tyypillisesti ReRAM-muistisolulla on kaksi rajoittavaa vastusarvoa, mutta näiden kahden tilan välille pystytään mahdollisesti ohjelmoimaan useampia tiloja. Muistisoluja voidaan kutsua analogisiksi, jos tilojen määrää ei ole rajoitettu. Analogisilla muistisoluilla olisi mahdollista rakentaa tehokkaasti esimerkiksi neuroverkkoja. Neuroverkoilla pyritään mallintamaan aivojen toimintaa ja suorittamaan tehtäviä, jotka ovat tyypillisesti vaikeita perinteisille tietokoneohjelmille. Neuroverkkoja käytetään esimerkiksi puheentunnistuksessa tai tekoälytoteutuksissa. Tässä diplomityössä tarkastellaan Ta2O5 -perustuvan ReRAM-muistisolun analogista toimintaa pitäen mielessä soveltuvuus neuroverkkoihin. ReRAM-muistisolun valmistus ja mittaustulokset käydään läpi. Muistisolun toiminta on harvoin täysin analogista, koska kahden rajoittavan vastusarvon välillä on usein rajattu määrä tiloja. Tämän vuoksi toimintaa kutsutaan pseudoanalogiseksi. Mittaustulokset osoittavat, että yksittäinen ReRAM-muistisolu kykenee binääriseen toimintaan hyvin. Joiltain osin yksittäinen solu kykenee tallentamaan useampia tiloja, mutta vastusarvoissa on peräkkäisten ohjelmointisyklien välillä suurta vaihtelevuutta, joka hankaloittaa tulkintaa. Valmistettu ReRAM-muistisolu ei sellaisenaan kykene toimimaan pseudoanalogisena muistina, vaan se vaati rinnalleen virtaa rajoittavan komponentin. Myös valmistusprosessin kehittäminen vähentäisi yksittäisen solun toiminnassa esiintyvää varianssia, jolloin sen toiminta muistuttaisi enemmän pseudoanalogista muistia.The memristor is one of the fundamental circuit elements in addition to a resistor, capacitor and an inductor. It is a passive component whose theory was postulated by Leon Chua in 1971. It took over 30 years before any known physical examples were discovered. In 2008 Hewlett Packard published an article where they manufactured a device which they claimed to be the first memristor found. The memristor, which is a concatenation of memory resistor, is a resistive component that has an ability to change its resistance. It can also remember its resistance value without continuous current or voltage. Typically, a memristor has at least two resistance states that can be altered. This is the reason why memristors are also called resistive switches. Resistive switches can be used in memory technologies. A memory array that has been built using resistive switches is called ReRAM (resistive random access memory). ReRAM, like Flash memory, is a non-volatile memory that can be programmed or erased electrically. Flash memories are currently used e.g. in memory sticks. However, compared to Flash, ReRAM has faster operating speed and lower power consumption, for instance. It could potentially replace current memory standards in future. A ReRAM memory cell can also store multiple bits instead of binary operation (”0” or ”1”). Typically there exists multiple intermediate resistance states between ReRAM’s limiting resistances that could be utilized. Such memory could be called analog, if the amount of intermediate states is not limited to discrete levels. Analog memories make it possible to build artificial neural networks (ANN) efficiently, for instance. ANNs try to model the behaviour of brain and to perform tasks that are difficult for traditional computer programs such as speech recognition or artificial intelligence. This thesis studies the analog behaviour of Ta 2 O 5 -based ReRAM cell. Manufacturing process and measurement results are presented. The operation of ReRAM cell is rarely fully analog as there exists limited amount of intermediate resistance states. This is the reason why operation is called pseudo-analog. Measurement results show that a single ReRAM cell is suitable for binary operation. In some cases, a single cell can store multiple resistance values but there exists significant variance in resistance states between subsequent programming cycles. The proposed ReRAM cell cannot operate as pseudo-analog ReRAM cell in itself as it needs an external current limiting component. Improving the manufacturing process should reduce the variability such that the operation would be more like a pseudo-analog memory.Siirretty Doriast

Passivity enforcement via chordal methods

Orientador: Prof. Dr. Gustavo Henrique da Costa OliveiraTese (doutorado) - Universidade Federal do Paraná, Setor de Tecnologia, Programa de Pós-Graduação em Engenharia Elétrica. Defesa : Curitiba, 27/08/2019Inclui referências: p. 164-175Resumo: Neste documento são propostos três algoritmos inéditos associados aos problemas subsequentes de aferição e imposição da passividade, a qual é uma propriedade qualitativa, geral e fundamental na modelagem matemática de transitórios eletromagnéticos de sistemas elétricos passivos, como transformadores. Esses algoritmos baseiam-se numa combinação de teoria dos grafos e otimização convexa. O primeiro deles consiste na aferição de subsistemas passivos contidos num sistema não passivo, intuitivamente busca-se partes passivas contidas num todo não passivo. Já na etapa de imposição de passividade, o segundo algoritmo é consequência natural do primeiro: retendo apenas os parâmetros associados às partes passivas e descartando os demais, parte-se de um sistema passivo parcialmente especificado para se determinar novos parâmetros em substituição àqueles descartados de modo que o sistema como um todo seja passivo. A possibilidade de determinação dos novos parâmetros depende de uma propriedade topológica de um grafo associado às matrizes de parâmetros do modelo, tal propriedade é denominada cordalidade. O terceiro algoritmo aborda novamente a questão de imposição da passividade e também faz uso da cordalidade, não mais como condição de existência de solução, mas sim como uma forma de explorar a esparsidade das matrizes de parâmetros. O problema de imposição da passividade encerra dois desafios no seu processo de solução, a saber: (i) compensação de parâmetros resultando na degradação do modelo bem como (ii) longos tempos de solução. Os algoritmos ora propostos são uma resposta a essas questões e os resultados obtidos demonstraram-se comparáveis àqueles já existentes na literatura especializada, em alguns casos apresentando melhorias, seja em termos de aproximação ou tempo computacionais. Os algoritmos foram testados a partir de dados de medição de um Transformador de Potencial Indutivo bem como de um Transformador de Potência. Palavras-chave: Macro-modelagem Passiva. Teoria de Sistemas. Álgebra Linear Aplicada. Análise de Transitórios. Transformadores.Abstract: Three novel algorithms are herein proposed to solve passivity assessment and enforcement problems. Passivity is a general, qualitative and fundamental property pertaining to the modeling associated with electromagnetic transients in passive power systems, such as transformers. These algorithms make combined use of Graph Theory and Convex Optimization. The first algorithm is concerned with passivity assesment. In particular, it searches for passive subsystems embedded into a larger nonpassive system and eventually specifies a partially specified passive system. Focusing on the subsequent step, algorithm two is a natural consequence of the preceeding one: retaining only the parameter set associated with passive subsystems as determined before, this partially specified passive system is used to further determine the remaining parameters so that the entire system be fully specified and passive. The existence condition for finding a fully specified system hinges on the fulfillment of a topological property of the graph associated the parameter matrices, namely chordality. The third algorithm also solves the passivity enforcement problem by making use of chordality, not as an existence condition, but rather by exploiting chordal sparsity patterns obtained with the parameter matrices. Solving passivity enforcement problems entails two persisting challenges, namely: (i) passivity compensations to parameters prompting increased model degradation as well as (ii) large computation times. The algorithms herein proposed tackle these issues and yield results comparable to those already in use, sometimes resulting in improved performance in terms of either approximation accuracy or runtime. These results herein reported entail data from actual measurements of an Inductive Voltage Transformer and a Power Transformer. Keywords: Passive Macromodeling. System Theory. Applied Linear Algebra. Transient Analysis. Transformers

In-Memory Computing by Using Nano-ionic Memristive Devices

By reaching to the CMOS scaling limitation based on the Moore’s law and due to the increasing disparity between the processing units and memory performance, the quest is continued to find a suitable alternative to replace the conventional technology. The recently discovered two terminal element, memristor, is believed to be one of the most promising candidates for future very large scale integrated systems. This thesis is comprised of two main parts, (Part I) modeling the memristor devices, and (Part II) memristive computing. The first part is presented in one chapter and the second part of the thesis contains five chapters. The basics and fundamentals regarding the memristor functionality and memristive computing are presented in the introduction chapter. A brief detail of these two main parts is as follows: Part I: Modeling- This part presents an accurate model based on the charge transport mechanisms for nanoionic memristor devices. The main current mechanism in metal/insulator/metal (MIM) structures are assessed, a physic-based model is proposed and a SPICE model is presented and tested for four different fabricated devices. An accuracy comparison is done for various models for Ag/TiO2/ITO fabricated device. Also, the functionality of the model is tested for various input signals. Part II: Memristive computing- Memristive computing is about utilizing memristor to perform computational tasks. This part of the thesis is divided into neuromorphic, analog and digital computing schemes with memristor devices. – Neuromorphic computing- Two chapters of this thesis are about biologicalinspired memristive neural networks using STDP-based learning mechanism. The memristive implementation of two well-known spiking neuron models, Hudgkin-Huxley and Morris-Lecar, are assessed and utilized in the proposed memristive network. The synaptic connections are also memristor devices in this design. Unsupervised pattern classification tasks are done to ensure the right functionality of the system. – Analog computing- Memristor has analog memory property as it can be programmed to different memristance values. A novel memristive analog adder is designed by Continuous Valued Number System (CVNS) scheme and its circuit is comprised of addition and modulo blocks. The proposed analog adder design is explained and its functionality is tested for various numbers. It is shown that the CVNS scheme is compatible with memristive design and the environment resolution can be adjusted by the memristance ratio of the memristor devices. – Digital computing- Two chapters are dedicated for digital computing. In the first one, a development over IMPLY-based logic with memristor is provided to implement a 4:2 compressor circuit. In the second chapter, A novel resistive over a novel mirrored memristive crossbar platform. Different logic gates are designed with the proposed memristive logic method and the simulations are provided with Cadence to prove the functionality of the logic. The logic implementation over a mirrored memristive crossbars is also assessed

Innovative micro-NMR/MRI functionality utilizing flexible electronics and control systems

Das zentrale Thema dieser Arbeit ist die Entwicklung und Integration von flexibler Elektronik für Mikro-Magnetresonanz (MR)-Anwendungen. Zwei wichtige Anwendungen wurden in der Dissertation behandelt; eine Anwendung auf dem Gebiet der Magnetresonanztomographie (MRI) und die andere auf dem Gebiet der Kernspinresonanz (NMR). Die MRI-Anwendung konzentriert sich auf die Lösung der Sicherheits- und Zuverlässigkeitsaspekte von MR-Kathetern. Die NMR-Anwendung stellt einen neuartigen Ansatz zur Steigerung des Durchsatzes bei der NMR-Spektroskopie vor. Der erste Teil der Dissertation behandelt die verschiedenen Technologien die zur Herstellung flexibler Elektronik auf der Mikroskala entwickelt wurden. Die behandelten MR-Anwendungen erfordern die Herstellung von Induktoren, Kondensatoren und Dioden auf flexiblen Substraten. Die erste Technologie, die im Rahmen der Mikrofabrikation behandelt wird, ist das Aufbringen einer leitfähigen Startschicht auf flexiblen Substraten. Es wurden verschiedene Techniken getestet und verglichen. Die entwickelte Technologie ermöglicht die Herstellung einer mehrschichtigen leitfähigen Struktur auf einem flexiblen Substrat (50 $\mu$m Dicke), die sich zum Umwickeln eines schlanken Rohres (>0,5 mm Durchmesser) eignet. Die zweite Methode ist der Tintenstrahldruck von Kondensatoren mit hoher Dichte und niedrigem Verlustkoeffizienten. Zwei dielektrische Tinten auf Polymerbasis wurden synthetisiert, durch die Dispersion von TiO$_2$ und BaTiO$_3$ in Benzocyclobuten (BCB) Polymer. Die im Tintenstrahldruckverfahren hergestellten Kondensatoren zeigen eine relativ hohe Kapazität pro Flächeneinheit von bis zu 69 pFmm$^{-2}$ und erreichen dabei einen Qualitätsfaktor (Q) von etwa 100. Außerdem wurde eine Technik für eine tintenstrahlgedruckte gleichrichtende Schottky-Diode entwickelt. Die letzte behandelte Technologie ist die Galvanisierung der leitenden Startschichten. Die Galvanik ist eine gut erforschte Technologie und ein sehr wichtiger Prozess auf dem Gebiet der Mikrofabrikation. Sie ist jedoch in hohem Maße von der Erfahrung des Bedieners abhängig. Darüber hinaus ist eine präzise Steuerung der Galvanikleistung erforderlich, insbesondere bei der Herstellung kleiner Strukturen, wobei sich die Pulsgalvanik als ein Verfahren erwiesen hat, das ein hohes Maß an Kontrolle über die abgeschiedene Struktur bietet. In diesem Zusammenhang wurde eine hochflexible Stromquelle auf Basis einer Mikrocontroller-Einheit entwickelt, um Genauigkeit in die Erstellung optimaler Galvanikrezepte zu bringen. Die Stromquelle wurde auf Basis einer modifizierten Howland-Stromquelle (MHCS) unter Verwendung eines Hochleistungs-Operationsverstärkers (OPAMP) aufgebaut. Die Stromquelle wurde validiert und verifiziert, und ihre hohe Leistungsfähigkeit wurde durch die Durchführung einiger schwieriger Anwendungen demonstriert, von denen die wichtigste die Verbesserung der Haftung der im Tintenstrahldruckverfahren gedruckten Startschicht auf flexiblen Substraten ist. Der zweite Teil der Dissertation befasst sich mit interventioneller MRT mittels MR-Katheter. MR-Katheter haben potenziell einen erheblichen Einfluss auf den Bereich der minimalinvasiven medizinischen Eingriffe. Implantierte längliche Übertragungsleiter und Detektorspulen wirken wie eine Antenne und koppeln sich an das MR-Hochfrequenz (HF)-Sendefeld an und machen so den Katheter während des Einsatzes in einem MRT-Scanner sichtbar. Durch diese Kopplung können sich die Leiter jedoch erhitzen, was zu einer gefährlichen Erwärmung des Gewebes führt und eine breite Anwendung dieser Technologie bisher verhindert hat. Ein alternativer Ansatz besteht darin, einen Resonator an der Katheterspitze induktive mit einer Oberflächenspule außerhalb des Körpers zu koppeln. Allerdings könnte sich auch dieser Mikroresonator an der Katheterspitze während der Anregungsphase erwärmen. Außerdem ändert sich die Sichtbarkeit der Katheterspitze, wenn sich die axiale Ausrichtung des Katheters während der Bewegung ändert, und kann verloren gehen, wenn die Magnetfelder des drahtlosen Resonators und der externen Spule orthogonal sind. In diesem Beitrag wird die Abstimmkapazität des Mikrodetektors des Katheters drahtlos über eine Impulsfolgensteuerung gesteuert, die an einen HF-Abstimmkreis gesendet wird, der in eine Detektorspule integriert ist. Der integrierte Schaltkreis erzeugt Gleichstrom aus dem übertragenen HF Signal zur Steuerung der Kapazität aus der Ferne, wodurch ein intelligenter eingebetteter abstimmbarer Detektor an der Katheterspitze entsteht. Während der HF-Übertragung erfolgt die Entkopplung durch eine Feinabstimmung der Detektorbetriebsfrequenz weg von der Larmor-Frequenz. Zusätzlich wird ein neuartiges Detektordesign eingeführt, das auf zwei senkrecht ausgerichteten Mikro-Saddle-Spulen basiert, die eine konstante Sichtbarkeit des Katheters für den gesamten Bereich der axialen Ausrichtungen ohne toten Winkel gewährleisten. Das System wurde experimentell in einem 1T MRT-Scanner verifiziert. Der dritte Teil der Dissertation befasst sich mit dem Durchsatz von NMR-Spektroskopie. Flussbasierte NMR ist eine vielversprechende Technik zur Verbesserung des NMR-Durchsatzes. Eine häufige Herausforderung ist jedoch das relativ große Totvolumen im Schlauch, der den NMR-Detektor speist. In diesem Beitrag wird ein neuartiger Ansatz für vollautomatische NMR-Spektroskopie mit hohem Durchsatz und verbesserter Massensensitivität vorgestellt. Der entwickelte Ansatz wird durch die Nutzung von Mikrofluidik-Technologien in Kombination mit Dünnfilm-Mikro-NMR-Detektoren verwirklicht. Es wurde ein passender NMR-Sensor mit einem mikrofluidischen System entwickelt, das Folgendes umfasst: i) einen Mikro-Sattel-Detektor für die NMR-Spektroskopie und ii) ein Paar Durchflusssensoren, die den NMR-Detektor flankieren und an eine Mikrocontrollereinheit angeschlossen sind. Ein mikrofluidischer Schlauch wird verwendet, um eine Probenserie durch den Sondenkopf zu transportieren, die einzelnen Probenbereiche sind durch eine nicht mischbare Flüssigkeit getrennt, das System erlaubt im Prinzip eine unbegrenzte Anzahl an Proben. Das entwickelte System verfolgt die Position und Geschwindigkeit der Proben in diesem zweiphasigen Fluss und synchronisiert die NMR-Akquisition. Der entwickelte kundenspezifische Sondenkopf ist Plug-and-Play-fähig mit marktüblichen NMR-Systemen. Das System wurde erfolgreich zur Automatisierung von flussbasierten NMR-Messungen in einem 500 MHz NMR-System eingesetzt. Der entwickelte Mikro-NMR-Detektor ermöglicht hochauflösende Spektroskopie mit einer NMR-Empfindlichkeit von 2,18 nmol s$^{1/2}$ bei Betrieb der Durchflusssensoren. Die Durchflusssensoren wiesen eine hohe Empfindlichkeit bis zu einem absoluten Unterschied von 0,2 in der relativen Permittivität auf, was eine Differenzierung zwischen den meisten gängigen Lösungsmitteln ermöglichte. Es wurde gezeigt, dass eine vollautomatische NMR-Spektroskopie von neun verschiedenen 120 $\mu$L Proben innerhalb von 3,6 min oder effektiv 15,3 s pro Probe erreicht werden konnte

Novel Multiphysics Phenomena in a New Generation of Energy Storage and Conversion Devices

The swelling demand for storing and using energy at diverse scales has stimulated the exploration of novel materials and design strategies applicable to energy storage systems. The most popular electrochemical energy storage systems are batteries, fuel cells and capacitors. Supercapacitors, also known as ultracapacitors, or electrochemical capacitors have emerged to be particularly promising. Besides exhibiting high cycle life, they combine the best attributes of capacitors (high power density) and batteries (high energy storage density). Consequently, they are expected to be in high demand for applications requiring peak power such as hybrid electric vehicles and uninterruptible power supplies (UPS). This dissertation aims to make advancements on the following two topics in supercapacitor research with the aid of modeling and experimental tools: applying various thermophysical effects to design supercapacitor devices with novel functionalities and studying degradation mechanisms upon continuous cycling of conventional supercapacitors. The prime drawback of conventional supercapacitors is their low energy density. Most research in the last decade has focused on synthesizing novel electrode materials. Although such novel electrodes lead to high energy density, they often involve complicated synthesis process and result in high cost and low power density. A new concept of inducing pseudocapacitance developed in recent years is by introducing redox additives in the electrolyte that engage in redox reactions at the electrode/electrolyte interface during charge/discharge. The first section of this dissertation reports the performance of fabricated solid-state supercapacitors composed of redox-active gel electrolyte (PVA-K3Fe(CN)6-K4Fe(CN)6). The electrochemical performance has been studied extensively using cyclic voltammetry, constant current charge/discharge and impedance spectroscopy techniques, and then the results are compared with similar devices composed of conventional gel electrolytes such as PVA-H3PO4 and PVA-KOH on the basis of capacitance, internal resistance and stable voltage window. The second section explores the utility of the thermogalvanic property of the same redox-active gel electrolyte, PVA-K3Fe(CN)6-K4Fe(CN)6 in the construction of a thermoelectric supercapacitor. The integrated device is capable of being electrically charged by applying a temperature gradient across its two electrodes. In the absence of available temperature gradient, the device can be discharged electrically through an external circuit. Therefore, such a device can be used to harvest waste heat from intermittent heat sources. An equivalent circuit elucidating the mechanisms of energy conversion and storage applicable to thermally chargeable supercapacitors is developed. A fitting analysis aids in the evaluation of model circuit parameters providing good agreement with experimental voltage and current measurements. The latter part of the dissertation investigates the factors influencing aging in conventional supercapacitors. In the first part, a new imaging technique based on the electroreflectance property of gold has been developed and applied to characterize the aging characteristics of a microsupercapacitor device. Previous aging studies were performed through traditional electrical characterization techniques such as cyclic voltammetry, constant charge/discharge, and electrochemical impedance spectroscopy. These methods, although simple, measure an average of the structures’ internal performance, providing little or no information about microscopic details inside the device. The electroreflectance imaging method, developed in this work is demonstrated as a high-resolution imaging technique to investigate charge distribution, and thus to infer aging characteristics upon continuous cycling at high scan rates. The technique can be used for non-intrusive spatial analysis of other electrochemical systems in the future. In addition, we investigate heat generation mechanisms that are responsible for accelerated aging in supercapacitors. A modeling framework has been developed for heat generation rates and resulting temperature evolution in porous electrode supercapacitors upon continuous cycling. Past thermal models either neglected spatial variations of heat generation within the cell or considered electrodes as flat plates that led to inaccuracies. Here, expressions for spatiotemporal variation of heat generation rate are rigorously derived on the basis of porous electrode theory. Detailed numerical simulations of temperature evolution are performed for a real-world device, and the results resemble past measurements both qualitatively and quantitatively. In the last chapter of the thesis, a rare thermoelectric effect called the Nernst effect has been investigated in single-layer periodic graphene with the aid of a modified Boltzmann transport equation. Detailed formulations of the transport coefficients from the BTE solution are developed in order to relate the Nernst coefficient to the amount of impurity density, temperature, band gap and applied magnetic field. Detailed knowledge of the variation of the thermoelectric and thermomagnetic properties of graphene shown in this work will prove helpful for improving the performance of magnetothermoelectric coolers and sensors

Chemistry of electronic ceramic materials. Proceedings of the International Conference on the Chemistry of Electronic Ceramic Materials

The conference was held at Jackson Hole, Wyoming from August 17 to 22, 1990, and in an attempt to maximize the development of this rapidly moving, multidisciplinary field, this conference brought together major national and international researchers to bridge the gap between those primarily interested in the pure chemistry of inorganic solids and those interested in the physical and electronic properties of ceramics. With the many major discoveries that have occurred over the last decade, one of the goals of this meeting was to evaluate the current understanding of the chemistry of electronic ceramic materials, and to assess the state of a field that has become one of the most important areas of advanced materials research. The topics covered include: crystal chemistry; dielectric ceramics; low temperature synthesis and characterization; solid state synthesis and characterization; surface chemistry; superconductors; theory and modeling

<General Physics, Plasma Dynamics, and Communication Sciences and Engineering< Quarterly Progress Report No. 77, Period Ending 28 Feb. 1965

Physics, plasma dynamics, and communication sciences and engineerin

Dual-Use Space Technology Transfer Conference and Exhibition

This document contains papers presented at the Dual-Use Space Technology Transfer Conference and Exhibition held at the Johnson Space Center February 1-3, 1994. Possible technology transfers covered during the conference were in the areas of information access; innovative microwave and optical applications; materials and structures; marketing and barriers; intelligent systems; human factors and habitation; communications and data systems; business process and technology transfer; software engineering; biotechnology and advanced bioinstrumentation; communications signal processing and analysis; new ways of doing business; medical care; applications derived from control center data systems; human performance evaluation; technology transfer methods; mathematics, modeling, and simulation; propulsion; software analysis and decision tools systems/processes in human support technology; networks, control centers, and distributed systems; power; rapid development perception and vision technologies; integrated vehicle health management; automation technologies; advanced avionics; ans robotics technologies. More than 77 papers, 20 presentations, and 20 exhibits covering various disciplines were presented b experts from NASA, universities, and industry