Analog I/Q FIR filter in 55-nm SiGe BiCMOS for 16-QAM optical communications at 112 Gb/s

We propose a novel implementation of a complex analog equalization filter for the compensation of frequency-dependent variations in coherent optical links. The analog compensation filter can be used in coherent-lite optical communication links where digital signal processing (DSP) is removed to limit the complexity and power consumption. In these links, the filter can compensate for electrical bandwidth limitations and distortion introduced by chromatic dispersion in the fiber. The complex filter is implemented by combining four distributed analog finite-impulse response (FIR) filters to obtain the necessary response. The filter delays are implemented using active delay cell structures to create a compact solution. The analog filter is implemented in a 55-nm BiCMOS technology and consumes 185-mW core power for five complex filter taps. Performance is evaluated using the S-parameter measurements, noise and linearity measurements, and real-time system experiments using 112-Gb/s 16-QAM-modulated signals

Design of a Built-In Test Equipment for a X-band phased array radar system in SiGe BiCMOS technology

In this work an X band Build In Test Equipment (BITE), implemented in the SiGe BiCMOS technology of Infineon, is presented. The possibility to perform precise measurements of phase shift and gain in the X- band, using lower frequency ( 4GHz-6GHz) automated test equipment (ATE), which is also used in WLAN devices, is investigated, leading to the design of the complete test equipment and finally to the full custom layout desig

The design of active resistors and transductors in a CMOS technology

Merged with duplicate record 10026.1/2618 on 07.20.2017 by CS (TIS)This thesis surveys linearisation techniques for implementing monolithic MOS active resistors and transconductors, and investigates the design of linear tunable resistors and transconductors. Improving linearity and tunability in the presence of non-ideal factors such as bulk modulation, mobility-degradation effects and mismatch of transistors is a principal objective. A family of new non-saturation-mode resistors and two novel saturation-mode transconductors are developed. Where possible, approximate analytical expressions are derived to explain the principles of operation. Performance comparisons of the new structures are made with other well-known circuits and their relative advantages and disadvantages evaluated. Experimental and simulation results are presented which validate the proposed linearisation techniques. It is shown that the proposed family of resistors offers improved linearity whilst the transconductors combine extended tunability with low distortion. Continuous-time filter examples are given to demonstrate the potential of these circuits for application in analogue signal-processing tasks.GEC Plessey Semiconductors, Plymout