A Survey Addressing on High Performance On-Chip VLSI Interconnect

With the rapid increase in transmission speeds of communication systems, the demand for very high-speed lowpower VLSI circuits is on the rise. Although the performance of CMOS technologies improves notably with scaling, conventional CMOS circuits cannot simultaneously satisfy the speed and power requirements of these applications. In this paper we survey the state of the art of on-chip interconnect techniques for improving performance, power and delay optimization and also comparative analysis of various techniques for high speed design have been discussed

차세대 자동차용 카메라 데이터 통신을 위한 비대칭 동시 양방향 송수신기의 설계

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022.2. 정덕균.본 학위 논문에서는 차세대 자동차용 카메라 링크를 위해 높은 속도의 4레벨 펄스 진폭 변조 신호와 낮은 속도의 2레벨 펄스 진폭 변조 신호를 통신하는 비대칭 동시 양방향 송수신기의 설계 기술에 대해 제안하고 검증되었다. 첫번째 프로토타입 설계에서는, 10B6Q 직류 밸런스 코드를 탑재한 4레벨 펄스 진폭 변조 송신기와 고정된 데이터와 참조 레벨을 가지는 4레벨 펄스 진폭 변조 적응형 수신기에 대한 내용이 기술되었다. 4레벨 펄스 진폭 변조 송신기에서는 교류 연결 링크 시스템에 대응하기 위한 면적 및 전력 효율성이 좋은 10B6Q 코드가 제안되었다. 이 코드는 직류 밸런스를 맞추고 연속적으로 같은 심볼을 가지는 길이를 6개로 제한 시킨다. 비록 여기서는 입력 데이터 길이 10비트를 사용하였지만, 제안된 기술은 카메라의 다양한 데이터 타입에 대응할 수 있도록 입력 데이터 길이에 대한 확장성을 가진다. 반면, 4레벨 펄스 진폭 변조 적응형 수신기에서는, 샘플러의 옵셋을 최적으로 제거하여 더 낮은 비트에러율을 얻기 위해서, 기존의 데이터 및 참조 레벨을 조절하는 대신, 이 레벨들은 고정시키고 가변 게인 증폭기를 적응형으로 조절하도록 하였다. 상기 10B6Q 코드 및 고정 데이터 및 참조레벨 기술을 가진 프로토타입 칩들은 40 나노미터 상호보완형 메탈 산화 반도체 공정으로 제작되었고 칩 온 보드 형태로 평가되었다. 10B6Q 코드는 합성 게이트 숫자는 645개와 함께 단 0.0009 mm2 의 면적 만을 차지한다. 또한, 667 MHz 동작 주파수에서 단 0.23 mW 의 전력을 소모한다. 10B6Q 코드를 탑재한 송신기에서 8-Gb/s 4레벨 펄스 진폭 변조 신호를 고정 데이터 및 참조 레벨을 가지는 적응형 수신기로 12-m 케이블 (22-dB 채널 로스) 을 통해서 보낸 결과 최소 비트 에러율 108 을 달성하였고, 비트 에러율 105 에서는 아이 마진이 0.15 UI x 50 mV 보다 크게 측정되었다. 송수신기를 합친 전력 소모는 65.2 mW (PLL 제외) 이고, 성과의 대표수치는 0.37 pJ/b/dB 를 보여주었다. 첫번째 프로토타입 설계을 포함하여 개선된 두번째 프로토타입 설계에서는, 12-Gb/s 4레벨 펄스 진폭 변조 정방향 채널 신호와 125-Mb/s 2레벨 펄스 진폭 변조 역방향 채널 신호를 탑재한 비대칭 동시 양방향 송수신기에 대해 기술되고 검증되었다. 제안된 넓은 선형 범위를 가지는 하이브리드는 gmC 저대역 통과 필터와 에코 제거기와 함께 아웃바운드 신호를 24 dB 이상 효율적으로 감소시켰다. 또한, 넓은 선형 범위를 가지는 하이브리드와 함께 게인 감소기를 형성하게 되는 선형 범위 증폭기를 통해 4레벨 펄스 진폭 변조 신호의 선형성과 진폭의 트레이드 오프 관계를 깨는 것이 가능하였다. 동시 양방향 송수신기 칩은 40 나노미터 상호보완형 메탈 산화 반도체 공정으로 제작되었다. 상기 설계 기술들을 이용하여, 4레벨 펄스 진폭 변조 및 2레벨 펄스 진폭 변조 송수신기 모두 5m 채널 (채널 로스 15.9 dB) 에서 1E-12 보다 낮은 비트 에러율을 달성하였고, 총 78.4 mW 의 전력 소모를 기록하였다. 종합적인 송수신기는 성과 대표지표로 0.41 pJ/b/dB 와 함께 동시 양방향 통신 아래에서 4레벨 펄스 진폭 변조 신호 및 2레벨 펄스 진폭 변조 신호 각각에서 아이 마진 0.15 UI 와 0.57 UI 를 달성하였다. 이 수치는 성과 대표지표 0.5 이하를 가지는 기존 동시 양방향 송수신기와의 비교에서 최고의 아이 마진을 기록하였다.In this dissertation, design techniques of a highly asymmetric simultaneous bidirectional (SB) transceivers with high-speed PAM-4 and low-speed PAM-2 signals are proposed and demonstrated for the next-generation automotive camera link. In a first prototype design, a PAM-4 transmitter with 10B6Q DC balance code and a PAM-4 adaptive receiver with fixed data and threshold levels (dtLevs) are presented. In PAM-4 transmitter, an area- and power-efficient 10B6Q code for an AC coupled link system that guarantees DC balance and limited run length of six is proposed. Although the input data width of 10 bits is used here, the proposed scheme has an extensibility for the input data width to cover various data types of the camera. On the other hand, in the PAM-4 adaptive receiver, to optimally cancel the sampler offset for a lower BER, instead of adjusting dtLevs, the gain of a programmable gain amplifier is adjusted adaptively under fixed dtLevs. The prototype chips including above proposed 10B6Q code and fixed dtLevs are fabricated in 40-nm CMOS technology and tested in chip-on-board assembly. The 10B6Q code only occupies an active area of 0.0009 mm2 with a synthesized gate count of 645. It also consumes 0.23 mW at the operating clock frequency of 667 MHz. The transmitter with 10B6Q code delivers 8-Gb/s PAM-4 signal to the adaptive receiver using fixed dtLevs through a lossy 12-m cable (22-dB channel loss) with a BER of 1E-8, and the eye margin larger than 0.15 UI x 50 mV is measured for a BER of 1E-5. The proto-type chips consume 65.2 mW (excluding PLL), exhibiting an FoM of 0.37 pJ/b/dB. In a second prototype design advanced from the first prototypes, An asymmetric SB transceivers incorporating a 12-Gb/s PAM-4 forward channel and a 125-Mb/s PAM-2 back channel are presented and demonstrated. The proposed wide linear range (WLR) hybrid combined with a gmC low-pass filter and an echo canceller effectively suppresses the outbound signals by more than 24dB. In addition, linear range enhancer which forms a gain attenuator with WLR hybrid breaks the trade-off between the linearity and the amplitude of the PAM-4 signal. The SB transceiver chips are separately fabricated in 40-nm CMOS technology. Using above design techniques, both PAM-4 and PAM-2 SB transceivers achieve BER less than 1E-12 over a 5-m channel (15.9 dB channel loss), consuming 78.4 mW. The overall transceivers achieve an FoM of 0.41 pJ/b/dB and eye margin (at BER of 1E-12) of 0.15 UI and 0.57 UI for the forward PAM-4 and back PAM-2 signals, respectively, under SB communication. This is the best eye margin compared to the prior art SB transceivers with an FoM less than 0.5.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 DISSERTATION ORGANIZATION 4 CHAPTER 2 BACKGROUND ON AUTOMOTIVE CAMERA LINK 6 2.1 OVERVIEW 6 2.2 SYSTEM REQUIREMENTS 10 2.2.1 CHANNEL 10 2.2.2 POWER OVER DIFFERENTIAL LINE (PODL) 12 2.2.3 AC COUPLING AND DC BALANCE CODE 15 2.2.4 SIMULTANEOUS BIDIRECTIONAL COMMUNICATION 18 2.2.4.1 HYBRID 18 2.2.4.2 ECHO CANCELLER 20 2.2.5 ADAPTIVE RECEIVE EQUALIZATION 22 CHAPTER 3 AREA AND POWER EFFICIENT 10B6Q ENCODER FOR DC BALANCE 25 3.1 INTRODUCTION 25 3.2 PRIOR WORKS 28 3.3 PROPOSED AREA- AND POWER-EFFICIENT 10B6Q PAM-4 CODER 30 3.4 DESIGN OF THE 10B6Q CODE 33 3.4.1 PAM-4 DC BALANCE 35 3.4.2 PAM-4 TRANSITION DENSITY 35 3.4.3 10B6Q DECODER 37 3.5 IMPLEMENTATION AND MEASUREMENT RESULTS 40 CHAPTER 4 PAM-4 TRANSMITTER AND ADAPTIVE RECEIVER WITH FIXED DATA AND THRESHOLD LEVELS 45 4.1 INTRODUCTION 45 4.2 PRIOR WORKS 47 4.3 ARCHITECTURE AND IMPLEMENTATION 49 4.2.1 PAM-4 TRANSMITTER 49 4.2.2 PAM-4 ADAPTIVE RECEIVER 52 4.3 MEASUREMENT RESULTS 62 CHAPTER 5 ASYMMETRIC SIMULTANEOUS BIDIRECTIONAL TRANSCEIVERS USING WIDE LINEAR RANGE HYBRID 68 5.1 INTRODUCTION 68 5.2 PRIOR WORKS 70 5.3 WIDE LINEAR RANGE (WLR) HYBRID 75 5.3 IMPLEMENTATION 78 5.3.1 SERIALIZER (SER) DESIGN 78 5.3.2 DESERIALIZER (DES) DESIGN 79 5.4 HALF CIRCUIT ANALYSIS OF WLR HYBRID AND LRE 82 5.5 MEASUREMENT RESULTS 88 CHAPTER 6 CONCLUSION 97 BIBLIOGRAPHY 99 초 록 106박

Integrated Circuit Design for Hybrid Optoelectronic Interconnects

This dissertation focuses on high-speed circuit design for the integration of hybrid optoelectronic interconnects. It bridges the gap between electronic circuit design and optical device design by seamlessly incorporating the compact Verilog-A model for optical components into the SPICE-like simulation environment, such as the Cadence design tool. Optical components fabricated in the IME 130nm SOI CMOS process are characterized. Corresponding compact Verilog-A models for Mach-Zehnder modulator (MZM) device are developed. With this approach, electro-optical co-design and hybrid simulation are made possible. The developed optical models are used for analyzing the system-level specifications of an MZM based optoelectronic transceiver link. Link power budgets for NRZ, PAM-4 and PAM-8 signaling modulations are simulated at system-level. The optimal transmitter extinction ratio (ER) is derived based on the required receiver\u27s minimum optical modulation amplitude (OMA). A limiting receiver is fabricated in the IBM 130 nm CMOS process. By side- by-side wire-bonding to a commercial high-speed InGaAs/InP PIN photodiode, we demonstrate that the hybrid optoelectronic limiting receiver can achieve the bit error rate (BER) of 10-12 with a -6.7 dBm sensitivity at 4 Gb/s. A full-rate, 4-channel 29-1 length parallel PRBS is fabricated in the IBM 130 nm SiGe BiCMOS process. Together with a 10 GHz phase locked loop (PLL) designed from system architecture to transistor level design, the PRBS is demonstrated operating at more than 10 Gb/s. Lessons learned from high-speed PCB design, dealing with signal integrity issue regarding to the PCB transmission line are summarized

INTEGRATED SINGLE-PHOTON SENSING AND PROCESSING PLATFORM IN STANDARD CMOS

Practical implementation of large SPAD-based sensor arrays in the standard CMOS process has been fraught with challenges due to the many performance trade-offs existing at both the device and the system level [1]. At the device level the performance challenge stems from the suboptimal optical characteristics associated with the standard CMOS fabrication process. The challenge at the system level is the development of monolithic readout architecture capable of supporting the large volume of dynamic traffic, associated with multiple single-photon pixels, without limiting the dynamic range and throughput of the sensor. Due to trade-offs in both functionality and performance, no general solution currently exists for an integrated single-photon sensor in standard CMOS single photon sensing and multi-photon resolution. The research described herein is directed towards the development of a versatile high performance integrated SPAD sensor in the standard CMOS process. Towards this purpose a SPAD device with elongated junction geometry and a perimeter field gate that features a large detection area and a highly reduced dark noise has been presented and characterized. Additionally, a novel front-end system for optimizing the dynamic range and after-pulsing noise of the pixel has been developed. The pixel is also equipped with an output interface with an adjustable pulse width response. In order to further enhance the effective dynamic range of the pixel a theoretical model for accurate dead time related loss compensation has been developed and verified. This thesis also introduces a new paradigm for electrical generation and encoding of the SPAD array response that supports fully digital operation at the pixel level while enabling dynamic discrete time amplitude encoding of the array response. Thus offering a first ever system solution to simultaneously exploit both the dynamic nature and the digital profile of the SPAD response. The array interface, comprising of multiple digital inputs capacitively coupled onto a shared quasi-floating sense node, in conjunction with the integrated digital decoding and readout electronics represents the first ever solid state single-photon sensor capable of both photon counting and photon number resolution. The viability of the readout architecture is demonstrated through simulations and preliminary proof of concept measurements

On signalling over through-silicon via (TSV) interconnects in 3-D integrated circuits.

This paper discusses signal integrity (SI) issues and signalling techniques for Through Silicon Via (TSV) interconnects in 3-D Integrated Circuits (ICs). Field-solver extracted parasitics of TSVs have been employed in Spice simulations to investigate the effect of each parasitic component on performance metrics such as delay and crosstalk and identify a reduced-order electrical model that captures all relevant effects. We show that in dense TSV structures voltage-mode (VM) signalling does not lend itself to achieving high data-rates, and that current-mode (CM) signalling is more effective for high throughput signalling as well as jitter reduction. Data rates, energy consumption and coupled noise for the different signalling modes are extracted

Cross-Layer Pathfinding for Off-Chip Interconnects

Off-chip interconnects for integrated circuits (ICs) today induce a diverse design space, spanning many different applications that require transmission of data at various bandwidths, latencies and link lengths. Off-chip interconnect design solutions are also variously sensitive to system performance, power and cost metrics, while also having a strong impact on these metrics. The costs associated with off-chip interconnects include die area, package (PKG) and printed circuit board (PCB) area, technology and bill of materials (BOM). Choices made regarding off-chip interconnects are fundamental to product definition, architecture, design implementation and technology enablement. Given their cross-layer impact, it is imperative that a cross-layer approach be employed to architect and analyze off-chip interconnects up front, so that a top-down design flow can comprehend the cross-layer impacts and correctly assess the system performance, power and cost tradeoffs for off-chip interconnects. Chip architects are not exposed to all the tradeoffs at the physical and circuit implementation or technology layers, and often lack the tools to accurately assess off-chip interconnects. Furthermore, the collaterals needed for a detailed analysis are often lacking when the chip is architected; these include circuit design and layout, PKG and PCB layout, and physical floorplan and implementation. To address the need for a framework that enables architects to assess the system-level impact of off-chip interconnects, this thesis presents power-area-timing (PAT) models for off-chip interconnects, optimization and planning tools with the appropriate abstraction using these PAT models, and die/PKG/PCB co-design methods that help expose the off-chip interconnect cross-layer metrics to the die/PKG/PCB design flows. Together, these models, tools and methods enable cross-layer optimization that allows for a top-down definition and exploration of the design space and helps converge on the correct off-chip interconnect implementation and technology choice. The tools presented cover off-chip memory interfaces for mobile and server products, silicon photonic interfaces, 2.5D silicon interposers and 3D through-silicon vias (TSVs). The goal of the cross-layer framework is to assess the key metrics of the interconnect (such as timing, latency, active/idle/sleep power, and area/cost) at an appropriate level of abstraction by being able to do this across layers of the design flow. In additional to signal interconnect, this thesis also explores the need for such cross-layer pathfinding for power distribution networks (PDN), where the system-on-chip (SoC) floorplan and pinmap must be optimized before the collateral layouts for PDN analysis are ready. Altogether, the developed cross-layer pathfinding methodology for off-chip interconnects enables more rapid and thorough exploration of a vast design space of off-chip parallel and serial links, inter-die and inter-chiplet links and silicon photonics. Such exploration will pave the way for off-chip interconnect technology enablement that is optimized for system needs. The basis of the framework can be extended to cover other interconnect technology as well, since it fundamentally relates to system-level metrics that are common to all off-chip interconnects

Recent Trends in Communication Networks

In recent years there has been many developments in communication technology. This has greatly enhanced the computing power of small handheld resource-constrained mobile devices. Different generations of communication technology have evolved. This had led to new research for communication of large volumes of data in different transmission media and the design of different communication protocols. Another direction of research concerns the secure and error-free communication between the sender and receiver despite the risk of the presence of an eavesdropper. For the communication requirement of a huge amount of multimedia streaming data, a lot of research has been carried out in the design of proper overlay networks. The book addresses new research techniques that have evolved to handle these challenges

Design Techniques for Energy Efficient Multi-GB/S Serial I/O Transceivers

Total I/O bandwidth demand is growing in high-performance systems due to the emergence of many-core microprocessors and in mobile devices to support the next generation of multi-media features. High-speed serial I/O energy efficiency must improve in order to enable continued scaling of these parallel computing platforms in applications ranging from data centers to smart mobile devices. The first work, a low-power forwarded-clock I/O transceiver architecture is presented that employs a high degree of output/input multiplexing, supply-voltage scaling with data rate, and low-voltage circuit techniques to enable low-power operation. The transmitter utilizes a 4:1 output multiplexing voltage-mode driver along with 4-phase clocking that is efficiently generated from a passive poly-phase filter. The output driver voltage swing is accurately controlled from 100-200 mV_(ppd) using a low-voltage pseudo-differential regulator that employs a partial negative-resistance load for improved low frequency gain. 1:8 input de-multiplexing is performed at the receiver equalizer output with 8 parallel input samplers clocked from an 8-phase injection-locked oscillator that provides more than 1UI de-skew range. Low-power high-speed serial I/O transmitters which include equalization to compensate for channel frequency dependent loss are required to meet the aggressive link energy efficiency targets of future systems. The second work presents a low power serial link transmitter design that utilizes an output stage which combines a voltage-mode driver, which offers low static-power dissipation, and current-mode equalization, which offers low complexity and dynamic-power dissipation. The utilization of current-mode equalization decouples the equalization settings and termination impedance, allowing for a significant reduction in pre-driver complexity relative to segmented voltage-mode drivers. Proper transmitter series termination is set with an impedance control loop which adjusts the on-resistance of the output transistors in the driver voltage-mode portion. Further reductions in dynamic power dissipation are achieved through scaling the serializer and local clock distribution supply with data rate. Finally, it presents that a scalable quarter-rate transmitter employs an analog-controlled impedance-modulated 2-tap voltage-mode equalizer and achieves fast power-state transitioning with a replica-biased regulator and ILO clock generation. Capacitively-driven 2 mm global clock distribution and automatic phase calibration allows for aggressive supply scaling

Principles of Neuromorphic Photonics

In an age overrun with information, the ability to process reams of data has become crucial. The demand for data will continue to grow as smart gadgets multiply and become increasingly integrated into our daily lives. Next-generation industries in artificial intelligence services and high-performance computing are so far supported by microelectronic platforms. These data-intensive enterprises rely on continual improvements in hardware. Their prospects are running up against a stark reality: conventional one-size-fits-all solutions offered by digital electronics can no longer satisfy this need, as Moore's law (exponential hardware scaling), interconnection density, and the von Neumann architecture reach their limits. With its superior speed and reconfigurability, analog photonics can provide some relief to these problems; however, complex applications of analog photonics have remained largely unexplored due to the absence of a robust photonic integration industry. Recently, the landscape for commercially-manufacturable photonic chips has been changing rapidly and now promises to achieve economies of scale previously enjoyed solely by microelectronics. The scientific community has set out to build bridges between the domains of photonic device physics and neural networks, giving rise to the field of \emph{neuromorphic photonics}. This article reviews the recent progress in integrated neuromorphic photonics. We provide an overview of neuromorphic computing, discuss the associated technology (microelectronic and photonic) platforms and compare their metric performance. We discuss photonic neural network approaches and challenges for integrated neuromorphic photonic processors while providing an in-depth description of photonic neurons and a candidate interconnection architecture. We conclude with a future outlook of neuro-inspired photonic processing.Comment: 28 pages, 19 figure