Reconfigurable RF Front End Components for Multi-Radio Platform Applications

The multi-service requirements of the 3G and 4G communication systems, and their backward compatibility requirements, create challenges for the antenna and RF front-end designs with multi-band and wide-band techniques. These challenges include: multiple filters, which are lossy, bulky, and expensive, are needed in the system; device board size limitation and the associated isolation problems caused by the limited space and crowd circuits; and the insertion loss issues created by the single-pole-multi-through antenna switch. As will be shown, reconfigurable antennas can perform portions of the filter functions, which can help solve the multiple filters problem. Additionally, reconfigurable RF circuits can decrease the circuit size and output ports, which can help solve board size limitation, and isolation and antenna switch insertion loss issues. To validate the idea that reconfigurable antennas and reconfigurable RF circuits are a viable option for multi-service communication system, a reconfigurable patch antenna, a reconfigurable monopole antenna, and a reconfigurable power amplifier (PA) have been developed. All designs adapt state-of-the-art techniques. For the reconfigurable antenna designs, an experiment demonstrating its advantages, such as jamming signal resistance, has been performed. Reconfigurable antennas provide a better out-ofoperating- band noise performance than the multi-band antennas design, decreasing the need for filters in the system. A full investigation of reconfigurable antennas, including the single service reconfigurable antenna, the mixed signal service reconfigurable antenna, and the multi-band reconfigurable antenna, has been completed. The design challenges, which include switches investigation, switches integration, and service grouping techniques, have been discussed. In the reconfigurable PA portion, a reconfigurable PA structure has first been demonstrated, and includes a reconfigurable output matching network (MN) and a reconfigurable die design. To validate the proposed reconfigurable PA structure, a reconfigurable PA for a 3G cell phone system has been designed with a multi-chip module technique. The reconfigurable PA structure can significantly decrease the real-estate, cost, and complexity of the PA design. Further, by decreasing the number of output ports, the number of poles for the antenna switch will be decreased as well, leading to an insertion loss decrease

Analysis and design of a high power millimeter-wave power amplifier in a SiGe BiCMOS technology

Our current society is characterized by an ever increasing need for bandwidth leading towards the exploration of new parts of the electromagnetic spectrum for data transmission. This results in a rising interest and development of millimeter-wave (mm-wave) circuits which hold the promise of short range multi-gigabit wireless transmissions at 60GHz. These relatively new applications are to co-exist with more established mm-wave consumer products including satellite systems in the Ka-band (26.5GHz - 40GHz) allowing e.g.: video broadcasting, voice over IP (VoIP), internet acces to remote areas, ... Both need significant linear power amplification due to the high attenuation typical for this part of the spectrum, however, satellite systems demand a saturated output power which is easily an order of magnitude larger (output powers in excess of 30dBm / 1W). Monolithic microwave integrated circuits (MMICs) employing III-V chip technologies, e.g.: gallium arsenide (GaAs), gallium nitride (GaN), have historically been the preferred choice to implement efficient mm-wave power amplifiers (PA) with a high saturated output power (>30dBm). To further increase the commercial viability of consumer products in this market segment a low manufacturing cost for the power amplifier, together with the possible integration of additional functions, is highly desirable. These features are the strongpoint of silicon based chip technologies like CMOS and SiGe BiCMOS. However, these technologies have a breakdown voltage typically below 2V for nodes capable of millimeter-wave applications while III-V transistors with equivalent frequency performance demonstrate breakdown voltages in excess of 8V. Because of this, output powers of CMOS and SiGe BiCMOS Ka-band power amplifiers rarely exceed 20dBm which poses the main hurdle for using these technologies in satellite communication (SATCOM). To overcome the limited output power of a single amplifying cell in a silicon technology, caused by the low breakdown voltage, multiple power amplifiers cells need to have their output power effectively combined on-chip. This requires the on-chip integration of high-Q passives within a relative small area to realize both the impedance transformation, to create the optimal load impedance for the different amplifier cells, and implement an efficient on-chip power combination network. Compared to III-V technologies this is again a challenge due to the use of a silicon substrate which introduces higher losses. Once a large enough on-chip output power is created, the issue of launching this signal to the outside world remains. Moreover, due to the limited efficiency of mm-wave PAs, the generated on-chip heat will increase when larger output power are required. This means a chipto-board interface with a low thermal resistance and a low loss electrical connection needs to be devised. Proof of the viability of silicon as a serious candidate for the integration of medium and high power Ka-band amplifiers will only be delivered by long term research and the actual creation of such an amplifier. In this context, the initial goal for the presented work is proposed. This consists of the creation of a power amplifier with a saturated output power above 24dBm (preferably 27dBm), a gain larger than 20dB and an efficiency in excess of 10% (preferably 15%). These specifications where conceived with the precondition of using a 250nm SiGe BiCMOS technology (IHP’s SG25H3) with an fT of 110GHz and a collector to emitter breakdown voltage in open base conditions (BVCEO) of 2.3V. The use of this technology is a significant challenge due to the limited speed, rule of thumb is to have at least one fifth of the fT as the operating frequency, which reflects in the attainable power added efficiency (PAE). On the other hand, proving the possible implementation in this “older” technology shows great potential towards the future integration in a fast technology (e.g.: IHP’s SG13G2, ft =300GHz). Next to issues caused by limitations of the chip technology, the proposed specifications allows to identify generic difficulties with high power silicon PA design, e.g.: design of efficient on-chip power combiners, thermal management, single-ended to differential conversion, ... As this work is of an academic nature the intention of this design was to leave the beaten track and explore alternative topologies. This has led to the adoption of a driver stage using translinear loops for biasing and a transformer-type Wilkinson power combiner previously only used in cable television (CATV) applications. Although the power combiner showed 2dB more loss than expected due to higher than expected substrate losses, both topologies show promise for further integration. Furthermore, an in-depth analysis was performed on the output stage which uses positive feedback to increase its gain. The entire design consists of a four-way power combining class AB power amplifier together with test structures of which the performance was verified by means of probing. Due to the previously mentioned higher than expected loss in the on-chip power combiner, the total output power and power added efficiency (PAE) was 2dB lower than expected from simulations. The result is a saturated output power at 32GHz of 24.1dBm with a PAE of 7.2% and a small signal gain of 25dB. This demonstrates the capability of SiGe BiCMOS to implement PA’s for medium-power mm-wave applications. Moreover, to the best of the author’s knowledge, this PA achieves the second highest saturated output power when comparing SiGe BiCMOS PA’s with center frequency in or close to the Ka-band. The 1dB compression point of this amplifier lies at 22.7dBm which is close to saturated output power and results in a low spectral regrowth when compared to commercial GaAs PA’s (compared with 2MBaud 16QAM input signal at 10dB back-off). Many possible improvements to this design remain. The most important would be the re-design of the on-chip power combiner, possibly with a floating ground shield, to reduce the losses and increase the total output power and PAE. Also the porting of the design to a faster chip technology might result in a considerable increase of the output stage efficiency at the cost of needing to combine more amplifier cells. The transition to a faster chip technology would additionally allow to use this design for alternative mm-wave applications like automotive radar at 79GHz andWiGig at 60GHz

CMOS-RF power amplifier for wireless communications

Tese de mestrado integrado. Engenharia Electrotécnica e de Computadores (Major Telecomunicações). Faculdade de Engenharia. Universidade do Porto. 200

Analysis And Design Of Wideband Passive Mixer-First Receivers

This dissertation focuses on the design of wideband SAW-less receivers for softwaredefined radios. The entire body of work is based on a single RF front-end architecture type: a passive mixer connected directly to the antenna port of the radio, without an LNA or matching network up front. This structure is inherently wideband which allows for a single receiver front-end to operate at a wide range of frequencies, as tuned by its local oscillator (LO). Additionally, the mixer exhibits the property of transparency from the baseband port of the radio to the RF port of the radio, and vice versa. The focus of the first half of the thesis is on developing a simple theoretical framework for the impedance characteristics of the passive mixer, and implementing a maximally flexible receiver which utilizes the mixer's transparency to the fullest extent. Additionally, it is shown that mixing with 8 non-overlapping phases instead of the traditional 4 has benefits beyond harmonic rejection extending to improved noise performance and increased impedance tuning range. This receiver exhibits low noise figure (~3dB), excellent wideband linearity (IIP3[GREATER-THAN OR EQUAL TO]25dBm), and unprecedented RF impedance control from the baseband side of the passive mixer. Another wideband receiver is presented which explores increasing the number of LO phases even further to 16 and 32, increasing the impedance matching range. The same chip contains a circuit technique for alleviating the shunting effects of LO phase overlap on mixer conversion gain, noise, and impedance match range. Finally in a new design, the power consumption of the receiver architecture is decreased by a factor of 5x (and not scaling with RF frequency). This is done using a resonant LO drive with 8 non-overlapping phases, incorporating the large mixer gate capacitance directly into the LC tank of the VCO. Baseband power consumption is also reduced by reusing current in the four baseband amplifier channels, and performing harmonic rejection, all in one stage of amplification

Interference-robust CMOS receivers for IoT:Highly linear RF front-ends at low power

Wireless technologies have brought Internet access to more than half of the world’s population in the last decade. Nowadays, Internet-of-Things (IoT) technology extends the internet connectivity to sensor nodes embedded in machines, animals, and plants. It will soon put us in a realm of billions of interconnected sensor nodes networking and communicating with each other. Such unprecedented growth of wireless devices puts a big challenge of sustainable and robust connectivity in front of us. Concretely, this challenge demands a wireless sensor node with low power and robust connectivity. Radios are the physical interface for sensor nodes with the external world and are one of the power-hungry components in sensor nodes. Hence it is imperative to make them energy-efficient and interference-robust. This thesis explores CMOS passive mixer-first receiver topology to enhance the interference tolerance of receivers in IoT radios. The dissertation proposes a novel N-path filter/mixer topology at the circuit level and a multipath cross-correlation technique at the system level. Two test-chips of mixer-first receiver front ends, using these techniques, are implemented in CMOS FDSOI 22nm technology as a proof-of-concept. The experimental prototypes demonstrate voltage gain in passive mixers and exhibit high-Q widely-tunable RF filtering, large out-of-band and harmonic interferer tolerance, and moderate noise figure while consuming much lower power than several state-of-the-art receivers

Conception d'amplificateurs de puissance reconfigurables en technologie CMOS avancée pour une application 4G LTE

Cette thèse porte sur la conception d amplificateurs de puissance reconfigurables en technologie CMOS avancée pour une application cellulaire de 4ème génération. Dans les systèmes de communication sans fil, le rendement énergétique est un critère primordial qui impacte la durée d utilisation de la batterie. Principalement déterminé par la consommation d énergie du transmetteur, il est plus particulièrement lié à celle de l amplificateur de puissance (PA). Pour les terminaux mobiles de 4ème génération (4G), les techniques de transmission et les modulations utilisées pour atteindre les débits de données visés induisant une dynamique importante du signal à transmettre, l implémentation de techniques d amélioration du rendement autour du PA devient indispensable, afin de le reconfigurer en puissance.Nous avons mis au point dans ce travail de recherche des architectures innovantes utilisant les techniques d amélioration du Power Cell Switching (PCS) et de l Envelope Tracking (ET). Le double objectif visé étant d améliorer significativement le rendement pour les faibles niveaux de puissance et d apporter de la flexibilité par rapport à un PA utilisé seul. Une première architecture utilisant la technique du PCS totalement intégré en technologie CMOS 65nm de STMicroelectronics, mettant en œuvre des transformateurs comme combineurs de puissance, a été réalisée pour valider la fonctionnalité du concept proposé. Puis une deuxième architecture combinant les techniques du PCS et de l ET a été conçue, afin d évaluer les avantages qu apporte la combinaison de ces deux techniques par rapport à un PA fonctionnant seul et à un PA développé utilisant la technique du PCS.This thesis deals with the design of reconfigurable power amplifiers implemented in CMOS technology for 4G LTE application. For the next generation communication systems such as 4G LTE, orthogonal frequency division multiplexing (OFDM) is employed for a wideband communication. Indeed, signal information is encoded both in amplitude and phase domains, which results in a higher peak to average power ratio than for 2G and 3G systems. Consequently, the overall power amplifier (PA) efficiency does not only depend on efficiency at maximum power, but also and mainly on efficiency at back-off level where the PA operates most of the time. Obviously, classical PA architectures do not address this problem, because it can only achieve maximum efficiency at a single power level, usually around the peak output power. Therefore, the overall efficiency of the PA is considerably low and efficiency improvement techniques are required to increase the battery life-time. This thesis exposes innovative architectures using Power Cell Switching (PCS) and Envelope Tracking (ET) techniques. The main objective of the proposed architectures is to significantly improve the average efficiency in comparison with a stand-alone power amplifier at power back-off. Consequently, a reconfigurable PA architecture using a 4-step PCS technique has been implemented in CMOS 65nm technology. A second architecture was designed to evaluate the improvement obtained with the combination of these two techniques.BORDEAUX1-Bib.electronique (335229901) / SudocSudocFranceF

Bluetooth/WLAN receiver design methodology and IC implementations

Emerging technologies such as Bluetooth and 802.11b (Wi-Fi) have fuelled the growth of the short-range communication industry. Bluetooth, the leading WPAN (wireless personal area network) technology, was designed primarily for cable replacement applications. The first generation Bluetooth products are focused on providing low-cost radio connections among personal electronic devices. In the WLAN (wireless local area network) arena, Wi-Fi appears to be the superior product. Wi-Fi is designed for high speed internet access, with higher radio power and longer distances. Both technologies use the same 2.4GHz ISM band. The differences between Bluetooth and Wi-Fi standard features lead to a natural partitioning of applications. Nowadays, many electronics devices such as laptops and PDAs, support both Bluetooth and Wi-Fi standards to cover a wider range of applications. The cost of supporting both standards, however, is a major concern. Therefore, a dual-mode transceiver is essential to keep the size and cost of such system transceivers at a minimum. A fully integrated low-IF Bluetooth receiver is designed and implemented in a low cost, main stream 0.35um CMOS technology. The system includes the RF front end, frequency synthesizer and baseband blocks. It has -82dBm sensitivity and draws 65mA current. This project involved 6 Ph.D. students and I was in charge of the design of the channel selection complex filter is designed. In the Bluetooth transmitter, a frequency modulator with fine frequency steps is needed to generate the GFSK signal that has +/-160kHz frequency deviation. A low power ROM-less direct digital frequency synthesizer (DDFS) is designed to implement the frequency modulation. The DDFS can be used for any frequency or phase modulation communication systems that require fast frequency switching with fine frequency steps. Another contribution is the implementation of a dual-mode 802.11b/Bluetooth receiver in IBM 0.25um BiCMOS process. Direct-conversion architecture was used for both standards to achieve maximum level of integration and block sharing. I was honored to lead the efforts of 7 Ph.D. students in this project. I was responsible for system level design as well as the design of the variable gain amplifier. The receiver chip consumes 45.6/41.3mA and the sensitivity is -86/-91dBm

A reconfigurable 60GHz receiver : providing robustness to process variations

The problems associated with process-induced variability and other challenges of 60GHz circuit design and measurement are treated in this thesis. A system-level analysis is performed on a generic RF receiver. For doing that, first, bit error rate (BER) is considered as a figure of merit representing the overall performance of the Receiver. Then, each stage of the receiver is described by three parameters: voltage gain, noise, and nonlinearity which are prone to variation due to process spread. The variation of these parameters represents all lower-level sources of variability. Since bit error rate (BER), as a major performance measure of the receiver, is a direct function of the noise and distortion, the contribution of each block to the overall noise plus distortion (NPD) is analyzed, which opens the way for minimization of the sensitivity of the NPD to the performance variation of individual stages. It is shown that the first order sensitivities of NPD to the individual gains of the building blocks can all be made zero. Its second order sensitivity to the gains of the building blocks can be reduced. Its sensitivity to noise and nonlinearity of an individual building block can be reduced, but at the cost of that of other blocks; its sensitivity to noise and nonlinearity cannot be reduced over the whole system. Three design approaches are proposed, analyzed and compared. Statistical and corner simulations are performed to confirm the validity of the proposed guidelines showing significant improvement in the yield of the designs. Applying the analysis to a zero-IF three-stage 60 GHz receiver shows a significant improvement in the design yield, by nullifying the first order sensitivities of the overall performance to the individual gains of the blocks. Reduction of the second order sensitivity of the NPD to the gain of individual stages, by keeping the contribution factor of all the stages below one, results in further improvements in the design yield. The conventional optimum-power design methodology has been modified in a way that it nullifies the first order sensitivities of NPD to the individual gains of all the stages. It is shown that for simultaneous power optimization and reduced second-order sensitivity to the gains of the blocks less power hungry building blocks must be in the rear stages of the receiver and more power hungry ones in the front. After identifying the limitations of a pure system-level approach, i.e., inability to suppress the sensitivity of the overall performance to the noise and nonlinearity of all the blocks, the focus is shifted towards circuit-level methods by providing re-configurability to some RF circuits. A receiver is designed with good noise and nonlinearity performance and with accumulated noise and nonlinearity distortion contribution in its last stage (mixer). As a result, the overall performance of the receiver is more sensitive to the performance variations of the mixer. Simulations show that it is possible to correct the overall receiver performance degradations resulting from process variations by just tuning the performance of the mixer. Furthermore, a tunable mixer is presented for minimizing the IMD2 across a wide IF bandwidth. It is demonstrated both in theory and measurement that a presented three-dimensional tuning method is beneficial for wideband cancellation of second order intermodulation distortions (IMD2) in a zero-IF downconverter. A 60GHz zero-IF mixer is designed and measured on-wafer to show that the proposed tuning mechanism can simultaneously suppress IMD2 tones across the whole 1GHz IF band. To address the challenges of 60GHz circuit design, a design methodology is utilized which serves to properly model the parasitic effects and improve the predictability of the performance. The parasitic effects due to layout, which are more influential at high frequencies, are taken into account by performing automatic RC extraction and manual L extraction. The long signal lines are modeled with distributed RLC networks. The problem of substrate losses is addressed by using patterned ground shields in inductors and transmission lines. The cross-talk issue is treated by using distributed meshed ground lines, decoupled DC lines, and grounded substrate contacts around sensitive RF components. However, in practice, it is observed that accurate simulation of all the effects is sometimes very time consuming or even infeasible. For instance electromagnetic simulation of a transformer in the presence of all the dummy metals is beyond the computational capability of existing EM-simulators. Three 60GHz receiver components are analyzed, designed, and measured with good performance. A two-stage fully integrated 60 GHz differential low noise amplifier is implemented in a CMOS 65 nm bulk technology with superior noise figure compared to state-of-the-art mm-wave LNAs. A doublebalanced 60 GHz mixer with ac-coupled RF input is designed and measured with a series capacitor in the input RF path to suppress the low frequency second order intermodulation distortions generated in the previous stage. A quadrature 60 GHz VCO is presented which exhibits a comparable level of performance, in particular very good phase noise, to state-of-the-art single-phase VCOs, despite the additional challenges and limitations imposed by the quadrature topology. The on-wafer measurements on the 60GHz circuits designed in this work are performed using a waveguide-based measurement setup. The fixed waveguide structures, specially provided for the probe station, serve for the robustness of the setup as they circumvent the need for cables, which are by nature difficult to rigidify, in the vicinity of the probes. Taking advantage of magic- Ts, it is possible to measure differential mm-wave circuits with a two-port network analyzer rather than using a much more expensive four-port one. Noise, s-parameter, and phase noise measurements are performed using the mentioned setups