A design for testability study on a high performance automatic gain control circuit.

A comprehensive testability study on a commercial automatic gain control circuit is presented which aims to identify design for testability (DfT) modifications to both reduce production test cost and improve test quality. A fault simulation strategy based on layout extracted faults has been used to support the study. The paper proposes a number of DfT modifications at the layout, schematic and system levels together with testability. Guidelines that may well have generic applicability. Proposals for using the modifications to achieve partial self test are made and estimates of achieved fault coverage and quality levels presente

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Testability enhancement of a basic set of CMOS cells

Testing should be evaluated as the ability of the test patterns to cover realistic faults, and high quality IC products demand high quality testing. We use a test strategy based on physical design for testability (to discover both open and short faults, which are difficult or even impossible to detect). Consequentially, layout level design for testability (LLDFT) rules have been developed, which prevent the faults, or at least reduce the chance of their appearing. The main purpose of this work is to apply a practical set of LLDFT rules to the library cells designed by the Centre Nacional de Microelectrònica (CNM) and obtain a highly testable cell library. The main results of the application of the LLDFT rules (area overheads and performance degradation) are summarized and the results are significant since IC design is highly repetitive; a small effort to improve cell layout can bring about great improvement in design

Layout level design for testability strategy applied to a CMOS cell library

The layout level design for testability (LLDFT) rules used here allow to avoid some hard to detect faults or even undetectable faults on a cell library by modifying the cell layout without changing their behavior and achieving a good level of reliability. These rules avoid some open faults or reduce their appearance probability. The main purpose has been to apply that set of LLDFT rules on the cells of the library designed at the Centre Nacional de Microelectronica (CNM) in order to obtain a highly testable cell library. The authors summarize the main results (area overhead and performance degradation) of the application of the LLDFT rules on the cell

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis

Quiescent current testing of CMOS data converters

Power supply quiescent current (IDDQ) testing has been very effective in VLSI circuits designed in CMOS processes detecting physical defects such as open and shorts and bridging defects. However, in sub-micron VLSI circuits, IDDQ is masked by the increased subthreshold (leakage) current of MOSFETs affecting the efficiency of I¬DDQ testing. In this work, an attempt has been made to perform robust IDDQ testing in presence of increased leakage current by suitably modifying some of the test methods normally used in industry. Digital CMOS integrated circuits have been tested successfully using IDDQ and IDDQ methods for physical defects. However, testing of analog circuits is still a problem due to variation in design from one specific application to other. The increased leakage current further complicates not only the design but also testing. Mixed-signal integrated circuits such as the data converters are even more difficult to test because both analog and digital functions are built on the same substrate. We have re-examined both IDDQ and IDDQ methods of testing digital CMOS VLSI circuits and added features to minimize the influence of leakage current. We have designed built-in current sensors (BICS) for on-chip testing of analog and mixed-signal integrated circuits. We have also combined quiescent current testing with oscillation and transient current test techniques to map large number of manufacturing defects on a chip. In testing, we have used a simple method of injecting faults simulating manufacturing defects invented in our VLSI research group. We present design and testing of analog and mixed-signal integrated circuits with on-chip BICS such as an operational amplifier, 12-bit charge scaling architecture based digital-to-analog converter (DAC), 12-bit recycling architecture based analog-to-digital converter (ADC) and operational amplifier with floating gate inputs. The designed circuits are fabricated in 0.5 μm and 1.5 μm n-well CMOS processes and tested. Experimentally observed results of the fabricated devices are compared with simulations from SPICE using MOS level 3 and BSIM3.1 model parameters for 1.5 μm and 0.5 μm n-well CMOS technologies, respectively. We have also explored the possibility of using noise in VLSI circuits for testing defects and present the method we have developed

[Delta] IDDQ testing of a CMOS 12-bit charge scaling digital-to-analog converter

This work presents design, implementation and test of a built-in current sensor (BICS) for ∆IDDQ testing of a CMOS 12-bit charge scaling digital-to-analog converter (DAC). The sensor uses power discharge method for the fault detection. The sensor operates in two modes, the test mode and the normal mode. In the test mode, the BICS is connected to the circuit under test (CUT) which is DAC and detects abnormal currents caused by manufacturing defects. In the normal mode, BICS is isolated from the CUT. The BICS is integrated with the DAC and is implemented in a 0.5 μm n-well CMOS technology. The DAC uses charge scaling method for the design and a low voltage (0 to 2.5 V) folded cascode op-amp. The built-in current sensor (BICS) has a resolution of 0.5 μA. Faults have been introduced into DAC using fault injection transistors (FITs). The method of ∆IDDQ testing has been verified both from simulation and experimental measurements

Iddq testing of a CMOS 10-bit charge scaling digital-to-analog converter

This work presents an effective built-in current sensor (BICS), which has a very small impact on the performance of the circuit under test (CUT). The proposed BICS works in two-modes the normal mode and the test mode. In the normal mode the BICS is isolated from the CUT due to which there is no performance degradation of the CUT. In the testing mode, our BICS detects the abnormal current caused by permanent manufacturing defects. Further more our BICS can also distinguish the type of defect induced (Gate-source short, source-drain short and drain-gate short). Our BICS requires neither an external voltage source nor current source. Hence the BICS requires less area and is more efficient than the conventional current sensors. The circuit under test is a 10-bit digital to analog converter using charge-scaling architecture