25 research outputs found

    Digital enhancement techniques for fractional-N frequency synthesizers

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    Meeting the demand for unprecedented connectivity in the era of internet-of-things (IoT) requires extremely energy efficient operation of IoT nodes to extend battery life. Managing the data traffic generated by trillions of such nodes also puts severe energy constraints on the data centers. Clock generators that are essential elements in these systems consume significant power and therefore must be optimized for low power and high performance. The focus of this thesis is on improving the energy efficiency of frequency synthesizers and clocking modules by exploring design techniques at both the architectural and circuit levels. In the first part of this work, a digital fractional-N phase locked loop (FNPLL) that employs a high resolution time-to-digital converter (TDC) and a truly ΔΣ fractional divider to achieve low in-band noise with a wide bandwidth is presented. The fractional divider employs a digital-to-time converter (DTC) to cancel out ΔΣ quantization noise in time domain, thus alleviating TDC dynamic range requirements. The proposed digital architecture adopts a narrow range low-power time-amplifier based TDC (TA-TDC) to achieve sub 1ps resolution. Fabricated in 65nm CMOS process, the prototype PLL achieves better than -106dBc/Hz in-band noise and 3MHz PLL bandwidth at 4.5GHz output frequency using 50MHz reference. The PLL achieves excellent jitter performance of 490fsrms, while consumes only 3.7mW. This translates to the best reported jitter-power figure-of-merit (FoM) of -240.5dB among previously reported FNPLLs. Phase noise performance of ring oscillator based digital FNPLLs is severely compromised by conflicting bandwidth requirements to simultaneously suppress oscillator phase and quantization noise introduced by the TDC, ΔΣ fractional divider, and digital-to-analog converter (DAC). As a consequence, their FoM that quantifies the power-jitter tradeoff is at least 25dB worse than their LC-oscillator based FNPLL counterparts. In the second part of this thesis, we seek to close this performance gap by extending PLL bandwidth using quantization noise cancellation techniques and by employing a dual-path digital loop filter to suppress the detrimental impact of DAC quantization noise. A prototype was implemented in a 65nm CMOS process operating over a wide frequency range of 2.0GHz-5.5GHz using a modified extended range multi-modulus divider with seamless switching. The proposed digital FNPLL achieves 1.9psrms integrated jitter while consuming only 4mW at 5GHz output. The measured in-band phase noise is better than -96 dBc/Hz at 1MHz offset. The proposed FNPLL achieves wide bandwidth up to 6MHz using a 50 MHz reference and its FoM is -228.5dB, which is at about 20dB better than previously reported ring-based digital FNPLLs. In the third part, we propose a new multi-output clock generator architecture using open loop fractional dividers for system-on-chip (SoC) platforms. Modern multi-core processors use per core clocking, where each core runs at its own speed. The core frequency can be changed dynamically to optimize for performance or power dissipation using a dynamic frequency scaling (DFS) technique. Fast frequency switching is highly desirable as long as it does not interrupt code execution; therefore it requires smooth frequency transitions with no undershoots. The second main requirement in processor clocking is the capability of spread spectrum frequency modulation. By spreading the clock energy across a wide bandwidth, the electromagnetic interference (EMI) is dramatically reduced. A conventional PLL clock generation approach suffers from a slow frequency settling and limited spread spectrum modulation capabilities. The proposed open loop fractional divider architecture overcomes the bandwidth limitation in fractional-N PLLs. The fractional divider switches the output frequency instantaneously and provides an excellent spread spectrum performance, where precise and programmable modulation depth and frequency can be applied to satisfy different EMI requirements. The fractional divider has unlimited modulation bandwidth resulting in spread spectrum modulation with no filtering, unlike fractional-N PLL; consequently it achieves higher EMI reduction. A prototype fractional divider was implemented in a 65nm CMOS process, where the measured peak-to-peak jitter is less than 27ps over a wide frequency range from 20MHz to 1GHz. The total power consumption is about 3.2mW for 1GHz output frequency. The all-digital implementation of the divider occupies the smallest area of 0.017mm2 compared to state-of-the-art designs. As the data rate of serial links goes higher, the jitter requirements of the clock generator become more stringent. Improving the jitter performance of conventional PLLs to less than (200fsrms) always comes with a large power penalty (tens of mWs). This is due to the PLL coupled noise bandwidth trade-off, which imposes stringent noise requirements on the oscillator and/or loop components. Alternatively, an injection-locked clock multiplier (ILCM) provides many advantages in terms of phase noise, power, and area compared to classical PLLs, but they suffer from a narrow lock-in range and a high sensitivity to PVT variations especially at a large multiplication factor (N). In the fourth part of this thesis, a low-jitter, low-power LC-based ILCM with a digital frequency-tracking loop (FTL) is presented. The proposed FTL relies on a new pulse gating technique to continuously tune the oscillator's free-running frequency. The FTL ensures robust operation across PVT variations and resolves the race condition existing in injection locked PLLs by decoupling frequency tuning from the injection path. As a result, the phase locking condition is only determined by the injection path. This work also introduces an accurate theoretical large-signal analysis for phase domain response (PDR) of injection locked oscillators (ILOs). The proposed PDR analysis captures the asymmetric nature of ILO's lock-in range, and the impact of frequency error on injection strength and phase noise performance. The proposed architecture and analysis are demonstrated by a prototype fabricated in 65 nm CMOS process with active area of 0.25mm2. The prototype ILCM multiplies the reference frequency by 64 to generate an output clock in the range of 6.75GHz-8.25GHz. A superior jitter performance of 190fsrms is achieved, while consuming only 2.25mW power. This translates to a best FoM of -251dB. Unlike conventional PLLs, ILCMs have been fundamentally limited to only integer-N operation and cannot synthesize fractional-N frequencies. In the last part of this thesis, we extend the merits of ILCMs to fractional-N and overcome this fundamental limitation. We employ DTC-based QNC techniques in order to align injected pulses to the oscillator's zero crossings, which enables it to pull the oscillator toward phase lock, thus realizing a fractional-N ILCM. Fabricated in 65nm CMOS process, a prototype 20-bit fractional-N ILCM with an output range of 6.75GHz-8.25GHz consumes only 3.25mW. It achieves excellent jitter performance of 110fsrms and 175fsrms in integer- and fractional-N modes respectively, which translates to the best-reported FoM in both integer- (-255dB) and fractional-N (-252dB) modes. The proposed fractional-N ILCM also features the first-reported rapid on/off capability, where the transient absolute jitter performance at wake-up is bounded below 4ps after less than 4ns. This demonstrates almost instantaneous phase settling. This unique capability enables tremendous energy saving by turning on the clock multiplier only when needed. This energy proportional operation leverages idle times to save power at the system-level of wireline and wireless transceivers

    CMOS Integrated Power Amplifiers for RF Reconfigurable and Digital Transmitters

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    abstract: This dissertation focuses on three different efficiency enhancement methods that are applicable to handset applications. These proposed designs are based on three critical requirements for handset application: 1) Small form factor, 2) CMOS compatibility and 3) high power handling. The three presented methodologies are listed below: 1) A transformer-based power combiner architecture for out-phasing transmitters 2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA) 3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB. The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%. Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

    Semiconductor-technology exploration : getting the most out of the MOST

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    Research and design of high-speed advanced analogue front-ends for fibre-optic transmission systems

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    In the last decade, we have witnessed the emergence of large, warehouse-scale data centres which have enabled new internet-based software applications such as cloud computing, search engines, social media, e-government etc. Such data centres consist of large collections of servers interconnected using short-reach (reach up to a few hundred meters) optical interconnect. Today, transceivers for these applications achieve up to 100Gb/s by multiplexing 10x 10Gb/s or 4x 25Gb/s channels. In the near future however, data centre operators have expressed a need for optical links which can support 400Gb/s up to 1Tb/s. The crucial challenge is to achieve this in the same footprint (same transceiver module) and with similar power consumption as today’s technology. Straightforward scaling of the currently used space or wavelength division multiplexing may be difficult to achieve: indeed a 1Tb/s transceiver would require integration of 40 VCSELs (vertical cavity surface emitting laser diode, widely used for short‐reach optical interconnect), 40 photodiodes and the electronics operating at 25Gb/s in the same module as today’s 100Gb/s transceiver. Pushing the bit rate on such links beyond today’s commercially available 100Gb/s/fibre will require new generations of VCSELs and their driver and receiver electronics. This work looks into a number of state‐of-the-art technologies and investigates their performance restraints and recommends different set of designs, specifically targeting multilevel modulation formats. Several methods to extend the bandwidth using deep submicron (65nm and 28nm) CMOS technology are explored in this work, while also maintaining a focus upon reducing power consumption and chip area. The techniques used were pre-emphasis in rising and falling edges of the signal and bandwidth extensions by inductive peaking and different local feedback techniques. These techniques have been applied to a transmitter and receiver developed for advanced modulation formats such as PAM-4 (4 level pulse amplitude modulation). Such modulation format can increase the throughput per individual channel, which helps to overcome the challenges mentioned above to realize 400Gb/s to 1Tb/s transceivers

    Topical Workshop on Electronics for Particle Physics

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    The purpose of the workshop was to present results and original concepts for electronics research and development relevant to particle physics experiments as well as accelerator and beam instrumentation at future facilities; to review the status of electronics for the LHC experiments; to identify and encourage common efforts for the development of electronics; and to promote information exchange and collaboration in the relevant engineering and physics communities
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