Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb electronic, physical, chemical, thermal, and optical properties, and they can be effectively used to provide additional performances, such as flexibility and transparency. 2D layered insulators are called to be essential in future electronic devices, but their reliability, degradation kinetics, and dielectric breakdown (BD) process are still not understood. In this work, the dielectric breakdown process of multilayer hexagonal boron nitride (h-BN) is analyzed on the nanoscale and on the device level, and the experimental results are studied via theoretical models. It is found that under electrical stress, local charge accumulation and charge trapping/detrapping are the onset mechanisms for dielectric BD formation. By means of conductive atomic force microscopy, the BD event was triggered at several locations on the surface of different dielectrics (SiO2, HfO2, Al2O3, multilayer h-BN, and monolayer h-BN); BD-induced hillocks rapidly appeared on the surface of all of them when the BD was reached, except in monolayer h-BN. The high thermal conductivity of h-BN combined with the one-atom-thick nature are genuine factors contributing to heat dissipation at the BD spot, which avoids self-accelerated and thermally driven catastrophic BD. These results point to monolayer h-BN as a sublime dielectric in terms of reliability, which may have important implications in future digital electronic devices.Fil: Jiang, Lanlan. Soochow University; ChinaFil: Shi, Yuanyuan. Soochow University; China. University of Stanford; Estados UnidosFil: Hui, Fei. Soochow University; China. Massachusetts Institute of Technology; Estados UnidosFil: Tang, Kechao. University of Stanford; Estados UnidosFil: Wu, Qian. Soochow University; ChinaFil: Pan, Chengbin. Soochow University; ChinaFil: Jing, Xu. Soochow University; China. University of Texas at Austin; Estados UnidosFil: Uppal, Hasan. University of Manchester; Reino UnidoFil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Lu, Guangyuan. Chinese Academy of Sciences; República de ChinaFil: Wu, Tianru. Chinese Academy of Sciences; República de ChinaFil: Wang, Haomin. Chinese Academy of Sciences; República de ChinaFil: Villena, Marco A.. Soochow University; ChinaFil: Xie, Xiaoming. Chinese Academy of Sciences; República de China. ShanghaiTech University; ChinaFil: McIntyre, Paul C.. University of Stanford; Estados UnidosFil: Lanza, Mario. Soochow University; Chin

A mode-coupling theory analysis of the rotation driven translational motion of aqueous polyatomic ions

In contrast to simple monatomic alkali and halide ions, complex polyatomic ions like nitrate, acetate, nitrite, chlorate etc. have not been studied in any great detail. Experiments have shown that diffusion of polyatomic ions exhibits many remarkable anomalies, notable among them is the fact that polyatomic ions with similar size show large difference in their diffusivity values. This fact has drawn relatively little interest in scientific discussions. We show here that a mode-coupling theory (MCT) can provide a physically meaningful interpretation of the anomalous diffusivity of polyatomic ions in water, by including the contribution of rotational jumps on translational friction. The two systems discussed here, namely aqueous nitrate ion and aqueous acetate ion, although have similar ionic radii exhibit largely different diffusivity values due to the differences in the rate of their rotational jump motions. We have further verified the mode-coupling theory formalism by comparing it with experimental and simulation results that agrees well with the theoretical prediction

Multivariate Adaptive Regression Splines in Standard Cell Characterization for Nanometer Technology in Semiconductor

Multivariate adaptive regression splines (MARSP) is a nonparametric regression method. It is an adaptive procedure which does not have any predetermined regression model. With that said, the model structure of MARSP is constructed dynamically and adaptively according to the information derived from the data. Because of its ability to capture essential nonlinearities and interactions, MARSP is considered as a great fit for high-dimension problems. This chapter gives an application of MARSP in semiconductor field, more specifically, in standard cell characterization. The objective of standard cell characterization is to create a set of high-quality models of a standard cell library that accurately and efficiently capture cell behaviors. In this chapter, the MARSP method is employed to characterize the gate delay as a function of many parameters including process-voltage-temperature parameters. Due to its ability of capturing essential nonlinearities and interactions, MARSP method helps to achieve significant accuracy improvement

Empirical Analysis of Time Series

Time series occur in many fields of biology, physics, chemistry, engineering. Much work has been recently performed in statistical physics using specific mathematical techniques on various time series pertaining to so-called nonlinear phenomena. Several methods, beyond the Fourier transform, are presented here. To distinguish between noise and deterministic content is the major challenge. Various phenomena are used for illustration. Some emphasis on findings and still questions will be drawn from problems in finance due to the existence (or not) of long-, medium-, short-range (power-law or not) correlations in such economic systems. The Fourier transform, the Hurst rescaled range, the instantaneous detrended fluctuations, the moving averages, and the Zipf-plots analysis methods will be recalled. They raise questions about fractional Brownian motion properties, or in sorting out correlation ranges and predictability. Among spectacular results, the possibility of crash predictions will be indicated when there is an underlying discrete scale invariance. Other time series for meteorology and electronics phenomena are also presented in order to discuss stratus cloud breaking and dielectric breakdown through avalanches for illustration purpose and to indicate that there are other widely open fields of possible investigations.time series; finance; fourier transform; Hurst exponenet; multifractal; detrended fluctuation analysis; moving average; Zipf; crashes

A survey of carbon nanotube interconnects for energy efficient integrated circuits

This article is a review of the state-of-art carbon nanotube interconnects for Silicon application with respect to the recent literature. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1) challenges with current copper interconnects, 2) process & growth of carbon nanotube interconnects compatible with back-end-of-line integration, and 3) modeling and simulation for circuit-level benchmarking and performance prediction. The focus is on the evolution of carbon nanotube interconnects from the process, theoretical modeling, and experimental characterization to on-chip interconnect applications. We provide an overview of the current advancements on carbon nanotube interconnects and also regarding the prospects for designing energy efficient integrated circuits. Each selected category is presented in an accessible manner aiming to serve as a survey and informative cornerstone on carbon nanotube interconnects relevant to students and scientists belonging to a range of fields from physics, processing to circuit design

Applications of plasma-liquid systems : a review

Plasma-liquid systems have attracted increasing attention in recent years, owing to their high potential in material processing and nanoscience, environmental remediation, sterilization, biomedicine, and food applications. Due to the multidisciplinary character of this scientific field and due to its broad range of established and promising applications, an updated overview is required, addressing the various applications of plasma-liquid systems till now. In the present review, after a brief historical introduction on this important research field, the authors aimed to bring together a wide range of applications of plasma-liquid systems, including nanomaterial processing, water analytical chemistry, water purification, plasma sterilization, plasma medicine, food preservation and agricultural processing, power transformers for high voltage switching, and polymer solution treatment. Although the general understanding of plasma-liquid interactions and their applications has grown significantly in recent decades, it is aimed here to give an updated overview on the possible applications of plasma-liquid systems. This review can be used as a guide for researchers from different fields to gain insight in the history and state-of-the-art of plasma-liquid interactions and to obtain an overview on the acquired knowledge in this field up to now

Electrodynamics of Amorphous Media at Low Temperatures

Amorphous solids exhibit intrinsic, local structural transitions, that give rise to the well known quantum-mechanical two-level systems at low temperatures. We explain the microscopic origin of the electric dipole moment of these two-level systems: The dipole emerges as a result of polarization fluctuations between near degenerate local configurations, which have nearly frozen in at the glass transition. An estimate of the dipole's magnitude, based on the random first order transition theory, is obtained and is found to be consistent with experiment. The interaction between the dipoles is estimated and is shown to contribute significantly to the Gr\"{u}neisen parameter anomaly in low $T$ glasses. In completely amorphous media, the dipole moments are expected to be modest in size despite their collective origin. In partially crystalline materials, however, very large dipoles may arise, possibly explaining the findings of Bauer and Kador, J. Chem. Phys. {\bf 118}, 9069 (2003).Comment: Submitted for publication; April 27, 2005 versio

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received much attention due to their technological potential in terms of scalability, highspeed, and low-power operation. Unfortunately, however, HfO2-FeFETs also suffer from persistent reliability challenges, specifically affecting retention, endurance, and variability. A deep understanding of the reliability physics of HfO2-FeFETs is an essential prerequisite for the successful commercialization of this promising technology. In this article, we review the literature about the relevant reliability aspects of HfO2-FeFETs. We initially focus on the reliability physics of ferroelectric capacitors, as a prelude to a comprehensive analysis of FeFET reliability. Then, we interpret key reliability metrics of the FeFET at the device level (i.e., retention, endurance, and variability) based on the physical mechanisms previously identified. Finally, we discuss the implications of device-level reliability metrics at both the circuit and system levels. Our integrative approach connects apparently unrelated reliability issues and suggests mitigation strategies at the device, circuit, or system level. We conclude this article by proposing a set of research opportunities to guide future development in this field