'Institute of Electrical and Electronics Engineers (IEEE)'
Doi
Abstract
Ferroelectric transistors (FeFETs) based on doped
hafnium oxide (HfO2) have received much attention due to
their technological potential in terms of scalability, highspeed,
and low-power operation. Unfortunately, however,
HfO2-FeFETs also suffer from persistent reliability challenges,
specifically affecting retention, endurance, and variability. A
deep understanding of the reliability physics of HfO2-FeFETs is
an essential prerequisite for the successful commercialization
of this promising technology. In this article, we review the
literature about the relevant reliability aspects of HfO2-FeFETs.
We initially focus on the reliability physics of ferroelectric
capacitors, as a prelude to a comprehensive analysis of FeFET
reliability. Then, we interpret key reliability metrics of the FeFET
at the device level (i.e., retention, endurance, and variability)
based on the physical mechanisms previously identified.
Finally, we discuss the implications of device-level reliability
metrics at both the circuit and system levels. Our integrative
approach connects apparently unrelated reliability issues and
suggests mitigation strategies at the device, circuit, or system
level. We conclude this article by proposing a set of research
opportunities to guide future development in this field
