Cross-layer Soft Error Analysis and Mitigation at Nanoscale Technologies

This thesis addresses the challenge of soft error modeling and mitigation in nansoscale technology nodes and pushes the state-of-the-art forward by proposing novel modeling, analyze and mitigation techniques. The proposed soft error sensitivity analysis platform accurately models both error generation and propagation starting from a technology dependent device level simulations all the way to workload dependent application level analysis

Cross-Layer Resiliency Modeling and Optimization: A Device to Circuit Approach

The never ending demand for higher performance and lower power consumption pushes the VLSI industry to further scale the technology down. However, further downscaling of technology at nano-scale leads to major challenges. Reduced reliability is one of them, arising from multiple sources e.g. runtime variations, process variation, and transient errors. The objective of this thesis is to tackle unreliability with a cross layer approach from device up to circuit level

Design and Evaluation of Radiation-Hardened Standard Cell Flip-Flops

Use of a standard non-rad-hard digital cell library in the rad-hard design can be a cost-effective solution for space applications. In this paper we demonstrate how a standard non-rad-hard flip-flop, as one of the most vulnerable digital cells, can be converted into a rad-hard flip-flop without modifying its internal structure. We present five variants of a Triple Modular Redundancy (TMR) flip-flop: baseline TMR flip-flop, latch-based TMR flip-flop, True-Single Phase Clock (TSPC) TMR flip-flop, scannable TMR flip-flop and self-correcting TMR flip-flop. For all variants, the multi-bit upsets have been addressed by applying special placement constraints, while the Single Event Transient (SET) mitigation was achieved through the usage of customized SET filters and selection of optimal inverter sizes for the clock and reset trees. The proposed flip-flop variants feature differing performance, thus enabling to choose the optimal solution for every sensitive node in the circuit, according to the predefined design constraints. Several flip-flop designs have been validated on IHP’s 130nm BiCMOS process, by irradiation of custom-designed shift registers. It has been shown that the proposed TMR flip-flops are robust to soft errors with a threshold Linear Energy Transfer (LET) from ( 32.4 (MeV⋅cm2/mg) ) to ( 62.5 (MeV⋅cm2/mg) ), depending on the variant

IC design for reliability

textAs the feature size of integrated circuits goes down to the nanometer scale, transient and permanent reliability issues are becoming a significant concern for circuit designers. Traditionally, the reliability issues were mostly handled at the device level as a device engineering problem. However, the increasing severity of reliability challenges and higher error rates due to transient upsets favor higher-level design for reliability (DFR). In this work, we develop several methods for DFR at the circuit level. A major source of transient errors is the single event upset (SEU). SEUs are caused by high-energy particles present in the cosmic rays or emitted by radioactive contaminants in the chip packaging materials. When these particles hit a N+/P+ depletion region of an MOS transistor, they may generate a temporary logic fault. Depending on where the MOS transistor is located and what state the circuit is at, an SEU may result in a circuit-level error. We analyze SEUs both in combinational logic and memories (SRAM). For combinational logic circuit, we propose FASER, a Fast Analysis tool of Soft ERror susceptibility for cell-based designs. The efficiency of FASER is achieved through its static and vector-less nature. In order to evaluate the impact of SEU on SRAM, a theory for estimating dynamic noise margins is developed analytically. The results allow predicting the transient error susceptibility of an SRAM cell using a closedform expression. Among the many permanent failure mechanisms that include time-dependent oxide breakdown (TDDB), electro-migration (EM), hot carrier effect (HCE), and negative bias temperature instability (NBTI), NBTI has recently become important. Therefore, the main focus of our work is NBTI. NBTI occurs when the gate of PMOS is negatively biased. The voltage stress across the gate generates interface traps, which degrade the threshold voltage of PMOS. The degraded PMOS may eventually fail to meet timing requirement and cause functional errors. NBTI becomes severe at elevated temperatures. In this dissertation, we propose a NBTI degradation model that takes into account the temperature variation on the chip and gives the accurate estimation of the degraded threshold voltage. In order to account for the degradation of devices, traditional design methods add guard-bands to ensure that the circuit will function properly during its lifetime. However, the worst-case based guard-bands lead to significant penalty in performance. In this dissertation, we propose an effective macromodel-based reliability tracking and management framework, based on a hybrid network of on-chip sensors, consisting of temperature sensors and ring oscillators. The model is concerned specifically with NBTIinduced transistor aging. The key feature of our work, in contrast to the traditional tracking techniques that rely solely on direct measurement of the increase of threshold voltage or circuit delay, is an explicit macromodel which maps operating temperature to circuit degradation (the increase of circuit delay). The macromodel allows for costeffective tracking of reliability using temperature sensors and is also essential for enabling the control loop of the reliability management system. The developed methods improve the over-conservatism of the device-level, worstcase reliability estimation techniques. As the severity of reliability challenges continue to grow with technology scaling, it will become more important for circuit designers/CAD tools to be equipped with the developed methods.Electrical and Computer Engineerin

Design, Analysis and Test of Logic Circuits under Uncertainty.

Integrated circuits are increasingly susceptible to uncertainty caused by soft errors, inherently probabilistic devices, and manufacturing variability. As device technologies scale, these effects become detrimental to circuit reliability. In order to address this, we develop methods for analyzing, designing, and testing circuits subject to probabilistic effects. Our main contributions are: 1) a fast, soft-error rate (SER) analyzer that uses functional-simulation signatures to capture error effects, 2) novel design techniques that improve reliability using little area and performance overhead, 3) a matrix-based reliability-analysis framework that captures many types of probabilistic faults, and 4) test-generation/compaction methods aimed at probabilistic faults in logic circuits. SER analysis must account for the main error-masking mechanisms in ICs: logic, timing, and electrical masking. We relate logic masking to node testability of the circuit and utilize functional-simulation signatures, i.e., partial truth tables, to efficiently compute estability (signal probability and observability). To account for timing masking, we compute error-latching windows (ELWs) from timing analysis information. Electrical masking is incorporated into our estimates through derating factors for gate error probabilities. The SER of a circuit is computed by combining the effects of all three masking mechanisms within our SER analyzer called AnSER. Using AnSER, we develop several low-overhead techniques that increase reliability, including: 1) an SER-aware design method that uses redundancy already present within the circuit, 2) a technique that resynthesizes small logic windows to improve area and reliability, and 3) a post-placement gate-relocation technique that increases timing masking by decreasing ELWs. We develop the probabilistic transfer matrix (PTM) modeling framework to analyze effects beyond soft errors. PTMs are compressed into algebraic decision diagrams (ADDs) to improve computational efficiency. Several ADD algorithms are developed to extract reliability and error susceptibility information from PTMs representing circuits. We propose new algorithms for circuit testing under probabilistic faults, which require a reformulation of existing test techniques. For instance, a test vector may need to be repeated many times to detect a fault. Also, different vectors detect the same fault with different probabilities. We develop test generation methods that account for these differences, and integer linear programming (ILP) formulations to optimize test sets.Ph.D.Computer Science & EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/61584/1/smita_1.pd

Combined Time and Information Redundancy for SEU-Tolerance in Energy-Efficient Real-Time Systems

Recently the trade-off between energy consumption and fault-tolerance in real-time systems has been highlighted. These works have focused on dynamic voltage scaling (DVS) to reduce dynamic energy dissipation and on time redundancy to achieve transient-fault tolerance. While the time redundancy technique exploits the available slack time to increase the fault-tolerance by performing recovery executions, DVS exploits slack time to save energy. Therefore we believe there is a resource conflict between the time-redundancy technique and DVS. The first aim of this paper is to propose the usage of information redundancy to solve this problem. We demonstrate through analytical and experimental studies that it is possible to achieve both higher transient fault-tolerance (tolerance to single event upsets (SEU)) and less energy using a combination of information and time redundancy when compared with using time redundancy alone. The second aim of this paper is to analyze the interplay of transient-fault tolerance (SEU-tolerance) and adaptive body biasing (ABB) used to reduce static leakage energy, which has not been addressed in previous studies. We show that the same technique (i.e. the combination of time and information redundancy) is applicable to ABB-enabled systems and provides more advantages than time redundancy alone

Fault Tolerant Electronic System Design

Due to technology scaling, which means reduced transistor size, higher density, lower voltage and more aggressive clock frequency, VLSI devices may become more sensitive against soft errors. Especially for those devices used in safety- and mission-critical applications, dependability and reliability are becoming increasingly important constraints during the development of system on/around them. Other phenomena (e.g., aging and wear-out effects) also have negative impacts on reliability of modern circuits. Recent researches show that even at sea level, radiation particles can still induce soft errors in electronic systems. On one hand, processor-based system are commonly used in a wide variety of applications, including safety-critical and high availability missions, e.g., in the automotive, biomedical and aerospace domains. In these fields, an error may produce catastrophic consequences. Thus, dependability is a primary target that must be achieved taking into account tight constraints in terms of cost, performance, power and time to market. With standards and regulations (e.g., ISO-26262, DO-254, IEC-61508) clearly specify the targets to be achieved and the methods to prove their achievement, techniques working at system level are particularly attracting. On the other hand, Field Programmable Gate Array (FPGA) devices are becoming more and more attractive, also in safety- and mission-critical applications due to the high performance, low power consumption and the flexibility for reconfiguration they provide. Two types of FPGAs are commonly used, based on their configuration memory cell technology, i.e., SRAM-based and Flash-based FPGA. For SRAM-based FPGAs, the SRAM cells of the configuration memory highly susceptible to radiation induced effects which can leads to system failure; and for Flash-based FPGAs, even though their non-volatile configuration memory cells are almost immune to Single Event Upsets induced by energetic particles, the floating gate switches and the logic cells in the configuration tiles can still suffer from Single Event Effects when hit by an highly charged particle. So analysis and mitigation techniques for Single Event Effects on FPGAs are becoming increasingly important in the design flow especially when reliability is one of the main requirements