Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-throughput rate transceiver

A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system for satellite as well as terrestrial purposes. Recent GaAs integrated circuit achievements are surveyed and their constituent device types are evaluated. Design considerations, on an elemental level, of the entire modem are further included for monolithic realization with practical fabrication techniques. Numerous device types, with practical monolithic compatability, are used in the design of functional blocks with sufficient performances for realization of the transceiver

Non Destructive Failure Analysis Technique With a Laboratory Based 3D X-ray Nanotomography System

ABSTRACT X-ray computed tomography (CT) is a powerful nondestructive 3D imaging technique, which enables the visualization of the three dimensional internal structure of opaque materials such as semiconductor devices. Reports of high resolution CT research on life science, materials and semiconductor has mainly been confined to synchrotron radiation centers. This severely limits the availability and accessibility of x-ray microscopes and the wide proliferation of this methodology. We describe a sub-50nm resolution nanoCT system operating at 8 keV in Zernike phase contrast mode based on a commercially available laboratory x-ray source. The system utilizes high-efficiency Fresnel zone plates with an outermost zone width of 35nm resulting in spatial resolution better than 50 nm. The technical description of the system and failure analysis applications notably in visualizing voids, residues in metal interconnects, and competitive analysis in semiconductor devices will be discussed

Advanced information processing system for advanced launch system: Hardware technology survey and projections

The major goals of this effort are as follows: (1) to examine technology insertion options to optimize Advanced Information Processing System (AIPS) performance in the Advanced Launch System (ALS) environment; (2) to examine the AIPS concepts to ensure that valuable new technologies are not excluded from the AIPS/ALS implementations; (3) to examine advanced microprocessors applicable to AIPS/ALS, (4) to examine radiation hardening technologies applicable to AIPS/ALS; (5) to reach conclusions on AIPS hardware building blocks implementation technologies; and (6) reach conclusions on appropriate architectural improvements. The hardware building blocks are the Fault-Tolerant Processor, the Input/Output Sequencers (IOS), and the Intercomputer Interface Sequencers (ICIS)

Influence of material quality and process-induced defects on semiconductor device performance and yield

An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated. Various defect characterization techniques are described and applied. A correlation of device failure, defect type, and cause of defect is presented in tabular form with accompanying illustrations

On the nature and effect of power distribution noise in CMOS digital integrated circuits

The thesis reports on the development of a novel simulation method aimed at modelling power distribution noise generated in digital CMOS integrated circuits. The simulation method has resulted in new information concerning: 1. The magnitude and nature of the power distribution noise and its dependence on the performance and electrical characteristics of the packaged integrated circuit. Emphasis is laid on the effects of resistive, capacitative and inductive elements associated with the packaged circuit. 2. Power distribution noise associated with a generic systolic array circuit comprising 1,020,000 transistors, of which 510,000 are synchronously active. The circuit is configured as a linear array which, if fabricated using two-micron bulk CMOS technology, would be over eight centimetres long and three millimetres wide. In principle, the array will perform 1.5 x 10 to the power of 11 operations per second. 3. Power distribution noise associated with a non-array-based signal processor which, if fabricated in 2-micron bulk CMOS technology, would occupy 6.7 sq. cm. The circuit contains about 900,000 transistors, of which 600,000 are functional and about 300,000 are used for yield enhancement. The processor uses the RADIX-2 algorithm and is designed to achieve 2 x 10 to the power of 8 floating point operations per second. 4. The extent to which power distribution noise limits the level of integration and/ or performance of such circuits using standard and non-standard fabrication and packaging technology. 5. The extent to which the predicted power distribution noise levels affect circuit susceptibility to transient latch-up and electromigration. It concludes the nature of CMOS digital integrated circuit power distribution noise and recommends ways in which it may be minimised. It outlines an approach aimed at mechanising the developed simulation methodology so that the performance of power distribution networks may more routinely be assessed. Finally. it questions the long term suitability of mainly digital techniques for signal processing

シリコンフォトニクスを用いた高速・高感度光受信器に関する研究

Tohoku University山田　博仁課

Advanced digital modulation: Communication techniques and monolithic GaAs technology

Communications theory and practice are merged with state-of-the-art technology in IC fabrication, especially monolithic GaAs technology, to examine the general feasibility of a number of advanced technology digital transmission systems. Satellite-channel models with (1) superior throughput, perhaps 2 Gbps; (2) attractive weight and cost; and (3) high RF power and spectrum efficiency are discussed. Transmission techniques possessing reasonably simple architectures capable of monolithic fabrication at high speeds were surveyed. This included a review of amplitude/phase shift keying (APSK) techniques and the continuous-phase-modulation (CPM) methods, of which MSK represents the simplest case