2,294 research outputs found

    Statistical circuit simulations - from ‘atomistic’ compact models to statistical standard cell characterisation

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    This thesis describes the development and application of statistical circuit simulation methodologies to analyse digital circuits subject to intrinsic parameter fluctuations. The specific nature of intrinsic parameter fluctuations are discussed, and we explain the crucial importance to the semiconductor industry of developing design tools which accurately account for their effects. Current work in the area is reviewed, and three important factors are made clear: any statistical circuit simulation methodology must be based on physically correct, predictive models of device variability; the statistical compact models describing device operation must be characterised for accurate transient analysis of circuits; analysis must be carried out on realistic circuit components. Improving on previous efforts in the field, we posit a statistical circuit simulation methodology which accounts for all three of these factors. The established 3-D Glasgow atomistic simulator is employed to predict electrical characteristics for devices aimed at digital circuit applications, with gate lengths from 35 nm to 13 nm. Using these electrical characteristics, extraction of BSIM4 compact models is carried out and their accuracy in performing transient analysis using SPICE is validated against well characterised mixed-mode TCAD simulation results for 35 nm devices. Static d.c. simulations are performed to test the methodology, and a useful analytic model to predict hard logic fault limitations on CMOS supply voltage scaling is derived as part of this work. Using our toolset, the effect of statistical variability introduced by random discrete dopants on the dynamic behaviour of inverters is studied in detail. As devices scaled, dynamic noise margin variation of an inverter is increased and higher output load or input slew rate improves the noise margins and its variation. Intrinsic delay variation based on CV/I delay metric is also compared using ION and IEFF definitions where the best estimate is obtained when considering ION and input transition time variations. Critical delay distribution of a path is also investigated where it is shown non-Gaussian. Finally, the impact of the cell input slew rate definition on the accuracy of the inverter cell timing characterisation in NLDM format is investigated

    Geometrical jitter and bolometric regime in photon detection by straight superconducting nanowire

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    We present a direct observation of the geometrical jitter in single photon detection by a straight superconducting nanowire. Differential measurement technique was applied to the 180-{\mu}m long nanowire similar to those commonly used in the technology of superconducting nanowire single photon detectors (SNSPD). A non-gaussian geometrical jitter appears as a wide almost uniform probability distribution (histogram) of the delay time (latency) of the nanowire response to detected photon. White electrical noise of the readout electronics causes broadened, Gaussian shaped edges of the histogram. Subtracting noise contribution, we found for the geometrical jitter a standard deviation of 8.5 ps and the full width at half maximum (FWHM) of the distribution of 29 ps. FWHM corresponds to the propagation speed of the electrical signal along the nanowire of 6.2×1066.2\times10^{6} m/s or 0.02 of the speed of light. Alternatively the propagation speed was estimated from the central frequency of the measured first order self-resonance of the nanowire. Both values agree well with each other and with previously reported values. As the intensity of the incident photon flux increases, the wide probability distribution collapses into a much narrower Gaussian distribution with a standard deviation dominated by the noise of electronics. We associate the collapse of the histogram with the transition from the discrete, single photon detection to the uniform bolometric regim

    Solid-state imaging : a critique of the CMOS sensor

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    Frequency domain laser velocimeter signal processor: A new signal processing scheme

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    A new scheme for processing signals from laser velocimeter systems is described. The technique utilizes the capabilities of advanced digital electronics to yield a smart instrument that is able to configure itself, based on the characteristics of the input signals, for optimum measurement accuracy. The signal processor is composed of a high-speed 2-bit transient recorder for signal capture and a combination of adaptive digital filters with energy and/or zero crossing detection signal processing. The system is designed to accept signals with frequencies up to 100 MHz with standard deviations up to 20 percent of the average signal frequency. Results from comparative simulation studies indicate measurement accuracies 2.5 times better than with a high-speed burst counter, from signals with as few as 150 photons per burst

    Processing circuitry for single channel radiation detector

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    Processing circuitry is provided for a high voltage operated radiation detector. An event detector utilizes a comparator configured to produce an event signal based on a leading edge threshold value. A preferred event detector does not produce another event signal until a trailing edge threshold value is satisfied. The event signal can be utilized for counting the number of particle hits and also for controlling data collection operation for a peak detect circuit and timer. The leading edge threshold value is programmable such that it can be reprogrammed by a remote computer. A digital high voltage control is preferably operable to monitor and adjust high voltage for the detector

    Performance analysis and design optimization of parallel-type slew-rate enhancers for switched-capacitor applications

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    The design of single-stage OTAs for accurate switched-capacitor circuits involves challenging trade-offs between speed and power consumption. The addition of a Slew-Rate Enhancer (SRE) circuit placed in parallel to the main OTA (parallel-type SRE) constitutes a viable solution to reduce the settling time, at the cost of low-power overhead and no modifications of the main OTA. In this work, a practical analytical model has been developed to predict the settling time reduction achievable with OTA/SRE systems and to show the effect of the various design parameters. The model has been applied to a real case, consisting of the combination of a standard folded-cascode OTA with an existing parallel-type SRE solution. Simulations performed on a circuit designed with a commercial 180-nm CMOS technology revealed that the actual settling-time reduction was significantly smaller than predicted by the model. This discrepancy was explained by taking into account the internal delays of the SRE, which is exacerbated when a high output current gain is combined with high power efficiency. To overcome this problem, we propose a simple modification of the original SRE circuit, consisting in the addition of a single capacitor which temporarily boosts the OTA/SRE currents reducing the internal turn-on delay. With the proposed approach a settling-time reduction of 57% has been demonstrated with an SRE that introduces only a 10% power-overhead with respect of the single OTA solution. The robustness of the results have been validated by means of Monte-Carlo simulations

    Multi-Loop-Ring-Oscillator Design and Analysis for Sub-Micron CMOS

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    Ring oscillators provide a central role in timing circuits for today?s mobile devices and desktop computers. Increased integration in these devices exacerbates switching noise on the supply, necessitating improved supply resilience. Furthermore, reduced voltage headroom in submicron technologies limits the number of stacked transistors available in a delay cell. Hence, conventional single-loop oscillators offer relatively few design options to achieve desired specifications, such as supply rejection. Existing state-of-the-art supply-rejection- enhancement methods include actively regulating the supply with an LDO, employing a fully differential or current-starved delay cell, using a hi-Z voltage-to-current converter, or compensating/calibrating the delay cell. Multiloop ring oscillators (MROs) offer an additional solution because by employing a more complex ring-connection structure and associated delay cell, the designer obtains an additional degree of freedom to meet the desired specifications. Designing these more complex multiloop structures to start reliably and achieve the desired performance requires a systematic analysis procedure, which we attack on two fronts: (1) a generalized delay-cell viewpoint of the MRO structure to assist in both analysis and circuit layout, and (2) a survey of phase-noise analysis to provide a bank of methods to analyze MRO phase noise. We distill the salient phase-noise-analysis concepts/key equations previously developed to facilitate MRO and other non-conventional oscillator analysis. Furthermore, our proposed analysis framework demonstrates that all these methods boil down to obtaining three things: (1) noise modulation function (NMF), (2) noise transfer function (NTF), and (3) current-controlled-oscillator gain (KICO). As a case study, we detail the design, analysis, and measurement of a proposed multiloop ring oscillator structure that provides improved power-supply isolation (more than 20dB increase in supply rejection over a conventional-oscillator control case fabricated on the same test chip). Applying our general multi-loop-oscillator framework to this proposed MRO circuit leads both to design-oriented expressions for the oscillation frequency and supply rejection as well as to an efficient layout technique facilitating cross-coupling for improved quadrature accuracy and systematic, substantially simplified layout effort

    Clock Jitter in Communication Systems

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    For reliable digital communication between devices, the sources that contribute to data sampling errors must be properly modeled and understood. Clock jitter is one such error source occurring during data transfer between integrated circuits. Clock jitter is a noise source in a communication link similar to electrical noise, but is a time domain noise variable affecting many different parts of the sampling process. Presented in this dissertation, the clock jitter effect on sampling is modeled for communication systems with the degree of accuracy needed for modern high speed data communication. The models developed and presented here have been used to develop the clocking specifications and silicon budgets for industry standards such as PCI Express, USB3.0, GDDR5 Memory, and HBM Memory interfaces
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