Analysis of Drop Out and Load Current for on Chip Voltage Regulators

LDO (Low Drop-Out) Voltage regulators are commonly used in electronics power supply circuit. DC linear voltage regulator is a LDO regulator that can regulate the output voltage even when the power supply voltage is very near to the output voltage. This paper present a comparison between two of the most admired voltage regulator structures such as feed forward ripple cancellation technique and MOS capacitor compensation technique.The comparison has been carried out considering the output voltage, power consumption, drop-out voltage, load current, quiescent current, line regulation and load regulation. The discussion is supported by practical analysis of both the voltage regulator. The two LDO voltage regulators are taken with power supply voltage, reference voltage, error amplifier, pass transistor. The object of this paper is to compare the all the parameter of the voltage regulator to found best LDO voltage regulator structure. The comparison showed that the voltage regulator circuit with MOS capacitor compensation technique (MCC) is best rather than feed forward ripple cancellation technique (FFRC).All simula-tion and result of LDO voltage regulator is done at tanner tool 14.1

Implemented LDO Chip with Output Capacitors Free

[[abstract]]In this paper the process of implementing a low dropout regulator (LDO) chip is presented; it is using uses Taiwan Semiconductor TSMC’s Manufacture Inc. 0.35um 2P4M process. The circuit designed with the described process can be is operated at 3-5V input voltage to generate 2.5V output voltage. Maximum output current can be running up to 200mA. This LDO is implemented without placing output capacitors to reduce BOM (Bill of Material) cost and stable between 0~200mA loading current and the chip is stable when the loading current is in the range 0~200mA. [8] The new proposed LDO chip can be implemented in the handheld mobile devices, battery powered equipment,wireless devices, cordless phones, or PC peripherals.[[notice]]補正完畢[[incitationindex]]EI[[booktype]]紙

Internally compensated LDO regulator based on the cascoded FVF

In this paper, an internally compensated low dropout (LDO) voltage regulator based on the Flipped Voltage Follower (FVF) is proposed. By means of capacitive coupling and dynamic biasing, the transient response to both load and line variations is enhanced. The proposed circuit has been designed and fabricated in a standard 0.5 mm CMOS technology. Experimental results show that the proposed circuit features a line and a load regulation of 132.04 mV/V and 153.53 mV/mA, respectively. Moreover, the output voltage spikes are kept under 150 mV for a 2 V-to-5 V supply variation and for 1 mA-to-100 mA load variation, both in 1 ms

Full On-chip low dropout voltage regulator with an enhanced transient response for low power systems

A full on chip low Dropout Voltage Regulator (LDO) with fast transient response and small capacitor compensation circuit is proposed. The novel technique is implemented to detect the variation voltage at the output of LDO and enable the proposed fast detector amplifier (FDA) to improve load transient response of 50mA load step. The large external capacitor used in Conventional LDO Regulators is removed allowing for greater power system integration for system-on-chip (SoC) applications. The 1.6-V Full On-Chip LDO voltage regulator with a power supply of 1.8 V was designed and simulated in the 0.18µm CMOS technology, consuming only 14 µA of ground current with a fast settling-time LNR(Line Regulation) and LOR(Load regulation) of 928ns and 883ns respectively while the rise and fall times in LNR and LOR is 500ns

Ultra Low Energy Analog Image Processing Using Spin Neurons

In this work we present an ultra low energy, 'on-sensor' image processing architecture, based on cellular array of spin based neurons. The 'neuron' constitutes of a lateral spin valve (LSV) with multiple input magnets, connected to an output magnet, using metal channels. The low resistance, magneto-metallic neurons operate at a small terminal voltage of ~20mV, while performing analog computation upon photo sensor inputs. The static current-flow across the device terminals is limited to small periods, corresponding to magnet switching time, and, is determined by a low duty-cycle system-clock. Thus, the energy-cost of analog-mode processing, inevitable in most image sensing applications, is reduced and made comparable to that of dynamic and leakage power consumption in peripheral CMOS units. Performance of the proposed architecture for some common image sensing and processing applications like, feature extraction, halftone compression and digitization, have been obtained through physics based device simulation framework, coupled with SPICE. Results indicate that the proposed design scheme can achieve more than two orders of magnitude reduction in computation energy, as compared to the state of art CMOS designs, that are based on conventional mixed-signal image acquisition and processing schemes. To the best of authors' knowledge, this is the first work where application of nano magnets (in LSV's) in analog signal processing has been proposed